Abstract: Embodiments relate to a semiconductor memory and a method for writing data. The semiconductor memory includes: at least one storage array, the storage array including a plurality of data storage units and a plurality of check bit storage units; a check module, configured to receive written data and generate check data according to the written data; and a data transmission module, respectively connected to the check module and the storage array, the data transmission module being configured to transmit the written data to the plurality of data storage units and transmit the check data to the plurality of check bit storage units. A first transmission time duration of the check data is shorter than a second transmission time duration of the written data.

Abstract: A delay circuit and a delay structure are provided. The circuit includes: a first delay unit configured to delay a rising edge and/or a falling edge of a pulse signal, where, an input terminal of the first delay unit receives the pulse signal, and an output terminal of the first delay unit outputs a first delay signal, and a second delay unit, configured to delay the first delay signal, where an input terminal of the second delay unit is connected to the output terminal of the first delay unit, and an output terminal of the second delay unit outputs a second delay signal.

Abstract: A voltage conversion circuit is provided. The circuit includes a first input module and a second input module. The first input module is connected to a first voltage and has a first input terminal for receiving an input signal and outputting a conversion signal, a high level of the input signal is a second voltage which is less than the first voltage; The second input module is connected to the first input module and has a second input terminal and an output terminal, the second input terminal is configured to receive a sampling signal, and the second input module is configured to sample the conversion signal according to the sampling signal and output an output signal via the output terminal.

Abstract: A detection circuit is configured to detect phase information between two clock signals of different frequencies, and the two clock signals include a low frequency clock signal and a high frequency clock signal. The detection circuit includes: a signal generation module, configured to detect the low frequency clock signal at an edge of the high frequency clock signal to generate a to-be-sampled signal, and generate a target sampling signal when the high frequency clock signal is kept at a preset level and the low frequency clock signal meets a preset condition; and a sampling module, connected with the signal generation module and configured to detect the to-be-sampled signal at an edge of the target sampling signal to generate a detection result signal.

Abstract: A storage system includes: a memory, configured to write or read a plurality of pieces of data during a read-write operation, the plurality of pieces of data being divided into M bytes, and each byte having N pieces of data; and an encoding circuit, configured to in the encoding stage, generate X first check codes based on the two or more pieces of data in each byte, generate Y second check codes based on all data of two or more bytes of the M bytes in the encoding stage, and generate a third check code based on the plurality of pieces of data, the X first check codes and the Y second check codes. The first check codes, the second check codes and the third check code are used to determine an error state of the plurality of pieces of data.

Abstract: An error correction system is disclosed. The error correction system is applied to a storage system. The error correction system generates X first operation codes, Y second operation codes and a third operation code based on the storage system. The error correction system includes an error state determining circuit and M decoding circuits. The error state determining circuit is configured to identify a current error state. When a plurality of pieces of data have a 1-bit error, the M decoding circuits are configured to execute decoding processing on the X first operation codes and the Y second operation codes, to obtain whether there is erroneous data in the bytes corresponding to the decoding circuits and locate a bit to which the erroneous data belongs.

Abstract: An error correction system includes M decoding units, each configured to perform decoding on the X first operation codes and the Y second operation codes; the decoding unit includes: a decoder, configured to receive the X first operation codes and output N first decoded signals, each corresponding to a respective one bit of the N data; a first AND gate unit, configured to receive and perform a logical AND operation on Z selected operation codes; an NOR gate unit, configured to receive and perform a logical NOR operation on (Y?Z) unselected operation codes; and N second AND gate units, each having an input terminal connected to an output terminal of the first AND gate unit, an output terminal of the NOR gate unit and one of the first decoded signals.

Abstract: Embodiments of the disclosure provide a comparison system including at least one comparison circuit, the comparison circuit including: a common circuit, connected to a power supply signal and a ground signal, and configured to control output of the power supply signal or the ground signal based on a first signal and a second signal which are inverted; a first logical circuit, connected to the common circuit, and configured to receive a third signal and a fourth signal which are inverted, and output a first operation signal which is an exclusive OR (XOR) of the first signal and the third signal; and a second logical circuit, connected to the common circuit, and configured to receive the third signal and the fourth signal, and output a second operation signal which is a not exclusive OR (XNOR) of the first signal and the third signal.

Abstract: The disclosed chip includes a storage module, pins, a control module, a first connection and a second connection. The storage module includes a first and a second storage array groups, which respectively include a plurality of first storage arrays and a plurality of second storage arrays. The pins are located on the side of the first storage array group away from the second storage array group. The control module is located between the first storage array group and the second storage array group. The first connection pin connects to the control module; and the second connection connects the control module to the first and the second storage array groups. The first connection line has a length less than the distance from the control module to the second storage array group at far side of the control module. The chip reduces the parasitic capacitance introduced by the first connection.

Abstract: A pulse signal generation circuit includes a clock frequency division component, a time delay component and a selection component. The clock frequency division component is configured to perform frequency division on a clock signal to generate a clock frequency division signal; the time delay component is configured to generate a time delay signal based on the clock frequency division signal; and the selection component is configured to receive the clock frequency division signal and the time delay signal at the same time, and select the clock frequency division signal and the time delay signal according to a preset condition to generate a pulse signal.

Abstract: The disclosed multi-level driving data transmission circuit and operating method include: a first driving module including a first signal generating unit and a first three-state driver, and a second driving module, including a second three-state driver. The first input terminal of the second three-state driver is coupled to the output terminal of the first three-state driver. The first signal generating unit includes a first and second input terminals, and an output terminal. The output terminal of the first signal generating unit couples to the second input terminal of the first three-state driver. The first signal generating unit receives the first signal through its first input terminal and the first feedback signal of the first signal from the second driving module through its second input terminal. The resultant first control signal has an effective signal width wider than the first signal. The first control signal inputs to the first three-state driver.

Abstract: A delay circuit and a delay structure are provided. The circuit includes: a first delay unit configured to delay a rising edge and/or a falling edge of a pulse signal, where, an input terminal of the first delay unit receives the pulse signal, and an output terminal of the first delay unit outputs a first delay signal, and a second delay unit, configured to delay the first delay signal, where an input terminal of the second delay unit is connected to the output terminal of the first delay unit, and an output terminal of the second delay unit outputs a second delay signal.

Abstract: A DRAM memory includes: a substrate; a plurality of memory banks arranged in rows and columns on the substrate, each memory bank is divided into three memory blocks in the column direction. Each memory block has a number of memory cells arranged in rows and columns. Dividing each memory bank into three memory blocks in the column direction shortens the length of the memory bank in the row direction, as each memory bank has a certain capacity, so a large drive is no longer required. In addition, the distance from the control circuit and the data transmission circuit to the corresponding memory cell in the memory array in each memory bank will be shorter too, reducing parasitic resistance and parasitic capacitance generated from the data transmission circuit. As a result, the data transmission rate and data transmission accuracy are improved. The overall power consumption is reduced.

Abstract: A memory is provided. The memory includes banks, each bank includes a U half bank and a V half bank; a first error checking and correcting unit connected with the U half banks and the V half banks and configured to check and correct errors of output data of the U half banks and the V half banks; and a second error checking and correcting unit connected with the U half banks and the V half banks and configured to check and correct errors of the output data of the U half banks and the V half banks.

Abstract: A data path interface circuit includes: a writing path module, connected to an internal port and an external port and configured to transmit stored data to the internal port from the external port; a reading path module, connected to the internal port and external port respectively and configured to transmit the stored data to the external port from the internal port; a first delay module, connected to the external port and internal port respectively, and configured to obtain the stored data from the external port or internal port, perform delay processing on the stored data, and transmit the delayed stored data to the writing path module and/or reading path module; and a delay control module, connected to the first delay module and configured to receive a signal instruction from external and control delay time for the first delay module to perform the delay processing according to the signal instruction.

Abstract: A semiconductor memory includes storage arrays, at least one verification module and gating circuits. Each verification module corresponds to multiple storage arrays. The verification module is configured to verify whether an error occurs in data information of the corresponding storage arrays. Each verification module is connected to a group of global data buses. The gating circuits are respectively connected to the storage arrays and the global data buses, and the gating circuits are configured to control on and off of a data transmission path connecting the global data buses to the storage arrays.

Abstract: Provided are a data transmission circuit and a memory. The data transmission circuit includes: a normal reading module, which is connected to a normal storage array and configured to read and output data from the normal storage array; a redundant reading module, which is connected to a redundant storage array, and configured to read and output data from the redundant storage array; and an error detection operation module, which is connected to the normal reading module and the redundant reading module respectively, and configured to synchronously receive the read data output from the normal reading module and the redundant reading module, and perform error detection operation on the read data.

Abstract: A detection circuit is configured to detect phase information between two clock signals of different frequencies, and the two clock signals include a low frequency clock signal and a high frequency clock signal. The detection circuit includes: a signal generation module, configured to detect the low frequency clock signal at an edge of the high frequency clock signal to generate a to-be-sampled signal, and generate a target sampling signal when the high frequency clock signal is kept at a preset level and the low frequency clock signal meets a preset condition; and a sampling module, connected with the signal generation module and configured to detect the to-be-sampled signal at an edge of the target sampling signal to generate a detection result signal.

Abstract: A memory, comprising: a plurality of storage groups, first signal lines and second signal lines. The plurality of storage groups is arranged along a first direction, each one of the storage groups includes multiple banks, which are arranged along a second direction, and the first direction is perpendicular to the second direction; the first signal lines extend along the first direction, each first signal line is arranged correspondingly to more than one of the multiple banks, and configured to transmit storage data of the more than one of the multiple banks; and the second signal lines extend along the first direction, each one of the second signal lines is arranged correspondingly to a respective bank, and configured to transmit the storage data of the respective bank; wherein the first signal lines exchange the storage data with the second signal lines through respective data exchange circuits.

Abstract: A data writing method and a memory, in which the data writing method is used for writing data to a memory array of the memory. The data writing method includes that: old data is read from a target column of the memory array; the old data is updated according to data to be written which carries target data bits information to generate new data; and the new data is written into the target column, in which the memory includes a plurality of data columns, the data is required to be written into the target column, and the target column includes a part of the data columns.