Abstract: A device includes a data storing cell array including a plurality of groups of data storing cells each configured to be accessed responsive to the input of the corresponding one of the row addresses and a count value control circuit coupled to each of the groups of the data storing cells. The count value control circuit is configured to update a count value stored in each of the groups of data storing cells by a first value responsive to the input of the corresponding one of the row addresses in a first operation mode and to set the count value stored in each of the groups of the data storing cells to a second value responsive to the input of the corresponding one of the row addresses in a second operation mode.

Abstract: A semiconductor device includes a first transistor having a gate, a source/drain and a drain/source coupled to a first node, a first power and the first node, respectively; a second transistor having a gate, a source/drain and a drain/source coupled to the first node, the first power and a third node, respectively; a third transistor having a gate, a source/drain and a drain/source coupled to a reference, a second node and the first node, respectively; a fourth transistor having a gate, a source/drain and a drain/source coupled to an input, the second node and the third node, respectively; a fifth transistor having a gate, a source/drain and a drain/source coupled to the first node, a second power and the second node, respectively; and a sixth transistor having a gate, a source/drain and a drain/source coupled to the reference, the second power and the second node, respectively.

Abstract: A voltage level shift circuit in which a difference in response characteristic depending on the signal level of an input signal is suppressed. The voltage level shift circuit generates an output signal VOUT having a voltage amplitude different from that of the input signal. An inverter INV2 generates a voltage V1 in the range of VSS to VDDI according to the input signal. An inverter INV3 generates a voltage V2 in the range of VSS to VPERI according to the input signal. An inverter INV4 generates the output signal VOUT according to V1 and V2.

Abstract: A semiconductor device includes a data transmission line and a data transmission line precharge circuit. The data transmission line precharge circuit sets a precharge potential of the data transmission line to a first potential at the time of a first write mode in which data masking is not performed. The data transmission line precharge circuit sets the precharge potential to a potential different from the first potential at the time of a second write mode in which data masking is performed. When data masking is not carried out, precharging to a potential at which data can be written in excellent fashion can be performed. When data masking is carried out, precharging to a potential that inhibits a fluctuation in bit-line potential can be performed.

Abstract: A semiconductor device includes internal voltage generating circuits, a switching circuit, load circuits, a control circuit. Each of the plurality of load circuits is supplied with voltage through the switching circuit from any one of the plurality of internal voltage generating circuits. The control circuit defines connecting combinations by the switch circuit. The control circuit supplies a control signal to the switch circuit, based on the control signal corresponding to the definitions of the connecting combinations. The control circuit allows switching the connecting combinations when the semiconductor device tests in a test mode. The control circuit prohibits switching the connecting combinations in a non-test mode. The switch circuit connects between each of m of the internal voltage generating circuits and each of n of the load circuits through a connecting combination which is selected, based on the control signal, from mn of the connecting combinations.

Abstract: A voltage level shift circuit in which a difference in response characteristic depending on the signal level of an input signal is suppressed. The voltage level shift circuit generates an output signal VOUT having a voltage amplitude different from that of the input signal. An inverter INV2 generates a voltage V1 in the range of VSS to VDDI according to the input signal. An inverter INV3 generates a voltage V2 in the range of VSS to VPERI according to the input signal. An inverter INV4 generates the output signal VOUT according to V1 and V2.

Abstract: A semiconductor memory device includes a memory cell array divided into a plurality of areas, a common data bus connected to an input/output circuit, a plurality of individual data buses connected to different areas of the memory cell array through different paths respectively, and a bidirectional buffer connected to the common data bus and the individual data buses. In the semiconductor memory device, the bidirectional buffers transmit data bidirectionally between the common data bus and a selected one of the individual data buses.

Abstract: Provided is a semiconductor memory device in which it is possible to conduct a parallel test by comparison with an expected value after replacement with a redundant cell. The memory device includes a logic circuit for outputting an activated redundant hit signal when at least one determination circuit of determination circuits corresponding to respective ones of a plurality of redundant addresses is activated; a logic circuit for outputting an activated signal when all outputs of the circuits are inactive; and a selector for outputting a test-result mask signal when a redundant area is tested, and outputting the output of the logic circuit when a normal area is tested. The test result is forcibly passed when a memory array is tested and when a redundant address is accessed.

Abstract: A semiconductor device includes a data transmission line and a data transmission line precharge circuit. The data transmission line precharge circuit sets a precharge potential of the data transmission line to a first potential at the time of a first write mode in which data masking is not performed. The data transmission line precharge circuit sets the precharge potential to a potential different from the first potential at the time of a second write mode in which data masking is performed. When data masking is not carried out, precharging to a potential at which data can be written in excellent fashion can be performed. When data masking is carried out, precharging to a potential that inhibits a fluctuation in bit-line potential can be performed.

Abstract: A semiconductor device includes internal voltage generating circuits, a switching circuit, load circuits, a control circuit. Each of the plurality of load circuits is supplied with voltage through the switching circuit from any one of the plurality of internal voltage generating circuits. The control circuit defines connecting combinations by the switch circuit. The control circuit supplies a control signal to the switch circuit, based on the control signal corresponding to the definitions of the connecting combinations. The control circuit allows switching the connecting combinations when the semiconductor device tests in a test mode. The control circuit prohibits switching the connecting combinations in a non-test mode. The switch circuit connects between each of m of the internal voltage generating circuits and each of n of the load circuits through a connecting combination which is selected, based on the control signal, from mn of the connecting combinations.

Abstract: A semiconductor memory device comprises an anti-fuse, a memory circuit including memory cells, and a peripheral circuit configured to access only an area of the memory circuit selected depending on a state of the anti-fuse.

Abstract: In a semiconductor memory having a plurality of memory banks that can be independently accessed, remedying bit registers that are substituted for defective memory cells are respectively provided for memory banks in a one-to-one relationship. Also, means for sharing the plurality of remedying bit registers in each memory bank is arranged.

Abstract: A differential amplifier circuit includes a plurality of differential-pair transistors, a plurality of current addition transistors, a latch, and a control transistor. The differential-pair transistors have gate electrodes that receive differential input signals respectively. Different potentials of the differential input signals represent a piece of information. The current addition transistors are connected in parallel to the differential-pair transistors, respectively. The latch has differential outputs corresponding to the differential input signals respectively and related to the amplified data. The control transistor receives an activation initiation signal.

Abstract: A duty detection circuit includes an integration circuit for receiving an RCLK signal and an FCLK signal that are internal clock signals generated by a DLL circuit, and generating voltage levels in accordance with the duty ratio of these internal clock signals; an amplifier for amplifying the output of the integration circuit; a latch circuit for latching the output of the amplifier; a control circuit for controlling the operation timings of each component; a bias circuit for feeding a BIAS signal to the integration circuit; and a frequency monitor circuit unit for monitoring the frequency of the clock signal. The frequency monitor circuit unit is a circuit component used when the power source is turned on, during resetting, and when other initial settings are performed, and detects the actual frequency of the clock signal and adjusts the amount of charging or discharging of the capacitors C1 through C4 in the integration circuit according to this actual frequency.

Abstract: A testing device for a semiconductor storage device which suppresses the increase in the circuit size, provides for facilitated accommodation to a test with frequent changes in the test pattern, and which improves testability of the semiconductor storage device. A plural number of holding circuits (103) are provided holding write data for memory cells of a memory cell array (101-1). The write data from the holding circuits (103) are written in the memory cells of the selected address. A plural number of comparators (CCMPN) are supplied with data read out from the memory cells and with data held by the holding circuits as expectation data to compare the readout data and the expectation data. The non-inverted value or the inverted value of the write data held by the holding circuits (103) is output as the write data to the memory cells and as expectation data to the comparators (CCMPN) depending on the value of the inversion control signal (DIM).

Abstract: In a semiconductor memory having a plurality of memory banks that can be independently accessed, remedying bit registers that are substituted for defective memory cells are respectively provided for memory banks in a one-to-one relationship. Also, means for sharing the plurality of remedying bit registers in each memory bank is arranged.

Abstract: In a semiconductor memory having a plurality of memory banks that can be independently accessed, remedying bit registers that are substituted for defective memory cells are respectively provided for memory banks in a one-to-one relationship. Also, means for sharing the plurality of remedying bit registers in each memory bank is arranged.

Abstract: A semiconductor memory device includes a memory cell array divided into a plurality of areas, a common data bus connected to an input/output circuit, a plurality of individual data buses connected to different areas of the memory cell array through different paths respectively, and a bidirectional buffer connected to the common data bus and the individual data buses. In the semiconductor memory device, the bidirectional buffers data transmitted bidirectionally between the common data bus and a selected one of the individual data buses.

Abstract: In a command generating circuit, operation mode signals (signals determining internal operations, such as ACTIVE, READ, WRITE, and PRECHARGE) are determined by decoding command signals /CS, /RAS, /CAS, and /WE. The operation mode signals and bank select signals (BS0, BS1, BS2, and BS3) are latched by internal clocks. Thereafter, a logical product (AND) of each of the latched operation mode signals and each of the latched bank select signals is calculated.

Abstract: A fuse circuit uses an electrically writable fuse circuit and comprises a first fuse unit provided with a first electrically writable fuse, and a second fuse unit provided with a second electrically writable fuse, and the state of logical add of the states of the first and second fuse units is used as the output of the electrically writable fuse circuit in the first and second fuse units. Reliability in writing in of the fuse can be improved by using such a fuse circuit for a redundancy decoder circuit or the like.