Abstract: Provided is an ultrasonic inspection device and method capable of generating a clear image of a desired bonding interface without an S-Gate. The controller in the ultrasonic inspection device is configured to: (A) define a first gate indicating a time range in which a part of a reflected wave is extracted based on a predetermined condition received; (B) define one or more second gates each indicating a time width smaller than that of the first gate before an end time of the first gate; (C) for each of a plurality of measurement points of an inspection object, (C1) detect a lower layer echo or a local peak, (C2) adjust a reception time of the reflected wave based on the lower layer echo or the local peak; and (D) generate a cross-sectional image of the inspection object based on the reflected wave.

Abstract: Provided is an ultrasonic testing device with which it is possible to suitably detect internal defects in an article to be tested. For this purpose, the ultrasonic testing device comprises: an ultrasonic probe that generates ultrasonic waves and transmits the same to the article to be tested, and that receives reflected waves reflected from the article to be tested; and a computation processing unit.

Abstract: In an ultrasonic inspection performed on an inspection object including a fine and multi-layer structure such as a semiconductor wafer and a MEMS wafer, a defect is detected by: separating a defect present inside from a normal pattern; obtaining an image of the inspection object by imaging the inspection object having a pattern formed thereon to enable a highly sensitive detection; generating a reference image that does not include a defect from the obtained image of the inspection object; generating a multi-value mask for masking a non-defective pixel from the obtained image of the inspection object; calculating a defect accuracy by matching the brightness of the image of the inspection object and the reference image; and comparing the calculated defect accuracy with the generated multi-value mask.

Abstract: In an ultrasonic inspection performed on an inspection object including a fine and multi-layer structure such as a semiconductor wafer and a MEMS wafer, a defect is detected by: separating a defect present inside from a normal pattern; obtaining an image of the inspection object by imaging the inspection object having a pattern formed thereon to enable a highly sensitive detection; generating a reference image that does not include a defect from the obtained image of the inspection object; generating a multi-value mask for masking a non-defective pixel from the obtained image of the inspection object; calculating a defect accuracy by matching the brightness of the image of the inspection object and the reference image; and comparing the calculated defect accuracy with the generated multi-value mask.

Abstract: In an ultrasonic inspection performed on an inspection object including a fine and multi-layer structure such as a semiconductor wafer and a MEMS wafer, a defect is detected by: separating a defect present inside from a normal pattern; obtaining an image of the inspection object by imaging the inspection object having a pattern formed thereon to enable a highly sensitive detection; generating a reference image that does not include a defect from the obtained image of the inspection object; generating a multi-value mask for masking a non-defective pixel from the obtained image of the inspection object; calculating a defect accuracy by matching the brightness of the image of the inspection object and the reference image; and comparing the calculated defect accuracy with the generated multi-value mask.

Abstract: The present invention provides a method for treating a solution contaminated with porcine circovirus, comprising the steps of: adjusting a pH of a solution contaminated with porcine circovirus to range from 3.0 to 7.0; and treating the pH-adjusted solution with a filtration membrane having an LRV for bacteriophage PP7 of 4 or more.

Abstract: In an ultrasonic inspection performed on an inspection object including a fine and multi-layer structure such as a semiconductor wafer and a MEMS wafer, a defect is detected by: separating a defect present inside from a normal pattern; obtaining an image of the inspection object by imaging the inspection object having a pattern formed thereon to enable a highly sensitive detection; generating a reference image that does not include a defect from the obtained image of the inspection object; generating a multi-value mask for masking a non-defective pixel from the obtained image of the inspection object; calculating a defect accuracy by matching the brightness of the image of the inspection object and the reference image; and comparing the calculated defect accuracy with the generated multi-value mask.

Abstract: In an ultrasonic inspection performed on an inspection object including a fine and multi-layer structure such as a semiconductor wafer and a MEMS wafer, a defect is detected by: separating a defect present inside from a normal pattern; obtaining an image of the inspection object by imaging the inspection object having a pattern formed thereon to enable a highly sensitive detection; generating a reference image that does not include a defect from the obtained image of the inspection object; generating a multi-value mask for masking a non-defective pixel from the obtained image of the inspection object; calculating a defect accuracy by matching the brightness of the image of the inspection object and the reference image; and comparing the calculated defect accuracy with the generated multi-value mask.

Abstract: The purpose of the present invention is to provide a shape examination method and device that are capable of measuring, stably and with high precision, complicated three-dimensional shapes. In order to solve this problem, the present invention provides a shape examination device comprising: a three-dimensional shape sensor that obtains shape data for an examination target, a path setting unit that uses reference data indicating the examination target shape data, and sets a path which passes through the relative position of the three-dimensional shape sensor relative to the examination target during examination; and a drive unit that controls the relative position of the three-dimensional shape sensor relative to the examination target.

Abstract: Disclosed is a defect inspection device that has an illumination optical system; a detection optical system; and a processing unit which includes a defect feature quantity calculation unit that calculates the feature quantities of each defect candidate, a defect candidate grouping unit that groups the aforementioned defect candidates on the basis of the feature quantities, a defect classification evaluation value calculation unit that calculates defect classification evaluation values for the aforementioned defect candidates, a defect classification evaluation value updating unit that, on the basis of instructions, updates the evaluation values, a defect classification threshold determination unit that, on the basis of evaluation valued updated by the aforementioned defect classification evaluation value updating unit, determines a classification boundary that is a threshold for classifying defect types of the aforementioned defect candidates, and a defect detection unit that detects defects using the thresho

Abstract: The pattern inspection apparatus of the present invention performs comparison between images of regions corresponding to patterns formed to be same patterns, thereby determining mismatch portions across the images to be defects. The apparatus includes multiple sensors that synchronously acquire images of shiftable multiple detection systems different from one another, and an image comparator section corresponding thereto. In addition, the apparatus includes a means for detecting a statistical offset value from the feature amount to be a defect, thereby properly detecting the defect even when a brightness difference is occurring in association with film a thickness difference in a wafer.

Abstract: The invention provides a defect inspection method and a defect inspection device which enable a defect to be inspected regardless of optical conditions. The invention comprises the steps of setting a target local region and a plurality of corresponding local regions in the image signals, the target local region including a target pixel and an area surrounding the target pixel, the corresponding local regions including pixels corresponding to the target pixel and areas surrounding the corresponding pixels; searching similarities between the image signal of the target local region and the image signals of the plurality of corresponding local regions; determining a plurality of image signals that represent corresponding local regions and are similar to the image signal of the target local region; and comparing the image signal of the target local region with the image signals that represent the corresponding local regions.

Abstract: A pattern inspection apparatus is provided to compare images of regions, corresponding to each other, of patterns that are formed so as to be identical and judge that non-coincident portions in the images are defects. The pattern inspection apparatus is equipped with an image comparing section which plots individual pixels of an inspection subject image in a feature space and detects excessively deviated points in the feature space as defects. Defects can be detected correctly even when the same patterns in images have a brightness difference due to a difference in the thickness of a film formed on a wafer.

Abstract: A defect inspection apparatus includes an illumination optical system which irradiates an inspection subject under a predetermined optical condition, a detection optical system which obtains image data by detecting a scattered light from the inspection subject irradiated by the illumination optical system, and an image processing unit provided with a defect candidate detection unit which detects defect candidates with respect to plural image data obtained by the detection optical system under different conditions, and a post-inspection processing unit which executes a defect determination by integrating the defect candidates with respect to the plural image data.

Abstract: A method of detecting a defect, including the steps of: illuminating step for illuminating a sample with a light; detecting step for detecting light from the specimen which is illuminated by the light and forming an image by processing the detected light; processing step for extracting a defect candidate by processing the image of the sample formed in the detecting step and determining an inspection condition by using images including the image of the sample acquired in the detecting step, a partial image including the extracted defect candidate and a reference image which corresponds to the partial image including the defect candidate.

Abstract: In order to highly sensitively detect fatal defects present in the vicinity of a direct peripheral circuit section in a chip formed on a semiconductor wafer, in the defect inspection device, which is provided with an illumination optical system that illuminates an inspection subject at predetermined optical conditions and a detection optical system that acquires image data by detecting scattered light from the inspection subject at predetermined detection conditions, a plurality of different defect determinations are performed for each region from a plurality of image data that differ in image data acquisition conditions or optical conditions and that are acquired by the detection optical system, and defect candidates are detected by consolidating the results.

Abstract: The pattern inspection apparatus of the present invention performs comparison between images of regions corresponding to patterns formed to be same patterns, thereby determining mismatch portions across the images to be defects. The apparatus includes multiple sensors that synchronously acquire images of shiftable multiple detection systems different from one another, and an image comparator section corresponding thereto. In addition, the apparatus includes a means for detecting a statistical offset value from the feature amount to be a defect, thereby properly detecting the defect even when a brightness difference is occurring in association with film a thickness difference in a wafer.

Abstract: A fault inspection method and apparatus in which the scattergram is separated or objects of comparison are combined in such a manner as to reduce the difference between an inspection object image and a reference image. As a result, the difference between images caused by the thickness difference in the wafer can be tolerated and the false information generation prevented without adversely affecting the sensitivity.

Abstract: In a pattern inspection apparatus, influences of pattern brightness variations that is caused in association with, for example, a film thickness difference or a pattern width variation can be reduced, high sensitive pattern inspection can be implemented, and a variety of defects can be detected. Thereby, the pattern inspection apparatus adaptable to a broad range of processing steps is realized. In order to realize this, the pattern inspection apparatus of the present invention performs comparison between images of regions corresponding to patterns formed to be same patterns, thereby determining mismatch portions across the images to be defects. The apparatus includes multiple sensors capable of synchronously acquiring images of shiftable multiple detection systems different from one another, and an image comparator section corresponding thereto.

Abstract: A pattern inspection apparatus is provided to compare images of regions, corresponding to each other, of patterns that are formed so as to be identical and judge that non-coincident portions in the images are defects. The pattern inspection apparatus is equipped with an image comparing section which plots individual pixels of an inspection subject image in a feature space and detects excessively deviated points in the feature space as defects. Defects can be detected correctly even when the same patterns in images have a brightness difference due to a difference in the thickness of a film formed on a wafer.