Abstract: An optical arrangement is equipped with lenses (22, 42) of double-refracting optically single-axis material in a pupillary plane (21, 41) and in tangentially polarized light or radially linearly polarized light. In this way, and for 157 nm lithography, MgF2 is usable as additional lens material with a deviating refracting index for achromatization with CaF2/BaF2.

Abstract: A refractive projection objective for use in microlithography with lenses made exclusively of one and the same material has an image-side numerical aperture larger than 0.7. A light bundle defined by the image-side numerical aperture and by the image field has within the objective a variable light-bundle diameter smaller than or equal to a maximum light-bundle diameter. In a length interval measured on the optical axis from the system diaphragm towards the object field and at least equaling the maximum light-bundle diameter, the variable light-bundle diameter exceeds 85% of the maximum light-bundle diameter.

Abstract: In the case of a method for producing an optical element with at least one curved surface by spherical separation, a spherical-cap-like separating body with cutting elements is used. The separating body is in this case moved in a pivoting movement through a basic body or the basic body is moved through the separating body, a relative rotational movement taking place between the basic body and the separating body with a rotating axis which passes through the center point (M) of the pivoting movement.

Abstract: A projection exposure lens system has an object side catadioptric system, and intermediate image and a refractive lens system. The refractive lens system from its intermediate image side and in the direction of its image plane has a first lens group of positive refractive power, a second lens group of negative refractive power, a third lens group of positive refractive power, a fourth lens group of negative refractive power, and a fifth lens group of positive refractive power.

Abstract: A projection exposure system is proposed which is positionable between a first object and a second object for imaging the first object in a region of the second object with light of a wavelength band having a width &dgr;&lgr; about a central working wavelength &lgr;, wherein a relative width &dgr;&lgr;/&lgr; of the wavelength band is larger than 0.002, in particular, larger than 0.005, for example, of the Hg-I-line. The projection exposure system is a so-called three-bulge system comprising three bulges having, as a whole, a positive refractive power and two waists having, as a whole, a negative refractive power. By applying suitable measures, in particular, by suitably selecting the material for the lenses forming the projection exposure system, the long-term stability of the system is increased.

Abstract: An objective with lenses made of two different crystals, in particular CaF2 and BaF2 is particularly suitable as a refractive projection objective for microlithography at 157 nm. Such projection objectives for 193/248 nm with quartz glass and achromatization with CaF2 are compaction-resistant with BaF2. Microlithography projection exposure equipment in the 100-200 nm wavelength region include other fluorides and partially catadioptric objectives.

Abstract: A very-high aperture, purely refractive projection objective is designed as a two-belly system with an object-side belly, an image-side belly and a waist (7) situated therebetween. The system diaphragm (5) is seated in the image-side belly at a spacing in front of the image plane. Arranged between the waist and the system diaphragm in the region of divergent radiation is a negative group (LG5) which has an effective curvature with a concave side pointing towards the image plane. The system is distinguished by a high numerical aperture, low chromatic aberrations and compact, material-saving design.

Abstract: A microlithographic projection illumination system has a focus-detection system for optically detecting deviations of the image plane of a projection lens from the upper surface of a substrate arranged in the vicinity of its image plane. The focus-detection system has a system for coupling in at least one measuring beam that is obliquely incident on, and to be reflected at, the substrate surface into an intermediate zone between the final optical surface of the imaging system and the substrate surface and a system for coupling out the measuring beam and detecting it following its reflection at the substrate surface.

Abstract: A projection objective has at least five lens groups (G1 to G5) and has several lens surfaces. At least two aspheric lens surfaces are arranged so as to be mutually adjacent. These mutually adjacently arranged lens surfaces are characterized as a double asphere. This at least one double asphere (21) is mounted at a minimum distance from an image plane (0′) which is greater than the maximum lens diameter (D2) of the objective.

Abstract: An aspheric reduction objective has a catadioptric partial objective (L1), an intermediate image (IMI) and a refractive partial objective (L2). The catadioptric partial objective has an assembly centered to the optical axis and this assembly includes two mutually facing concave mirrors (M1, M2). The cutouts in the mirrors (B1, B2) lead to an aperture obscuration which can be held to be very small by utilizing lenses close to the mirrors and having a high negative refractive power and aspheric lens surfaces (27, 33). The position of the entry and exit pupils can be corrected with aspherical lens surfaces (12, 48, 53) in the field lens groups. The number of spherical lenses in the refractive partial objective can be reduced with aspherical lens surfaces (66, 78) arranged symmetrically to the diaphragm plane. Neighboring aspheric lens surfaces (172, 173) form additional correction possibilities.

Abstract: A projection objective has at least five lens groups (G1 to G5) and has several lens surfaces. At least two aspheric lens surfaces are arranged so as to be mutually adjacent. These mutually adjacently arranged lens surfaces are characterized as a double asphere. This at least one double asphere (21) is mounted at a minimum distance from an image plane (0′) which is greater than the maximum lens diameter (D2) of the objective.

Abstract: An objective comprising axial symmetry, at least one curved mirror and at least one lens and two intermediate images. The objective includes two refractive partial objectives and one catadioptric partial objective. The objective includes a first partial objective, a first intermediate a image, a second partial objective, a second intermediate image, and a third partial objective. At least one of the partial objectives is purely refractive. One of the partial objectives is purely refractive and one is purely catoptric.

Abstract: The invention is directed to an optical unit having elements (6, 7) which are juxtaposed without an air gap therebetween. The two elements (6, 7) are joined by wringing the same to each other. At least one element (7) is of crystalline material and has an amorphous inorganic layer (70) on the side thereof facing toward the other element (6). The invention is also directed to a method of preparing an element made of crystalline material, such as a fluoride, as well as a method for making a thin optical element of the crystalline material.

Abstract: The invention is directed to an optical system for the vacuum ultraviolet range wherein the optical system utilizes the isotropic point at which the wavelength of the double refraction of a crystal is eliminated. The crystal is preferably of MgF2. With the optical system, a known good optical material, namely, MgF2, which is limited only by its double refraction, becomes usable for the VUV optics.

Abstract: There is provided an illumination system for scannertype microlithography along a scanning direction with a light source emitting a wavelength ≦193 nm. The illumination system includes a plurality of raster elements. The plurality of raster elements is imaged into an image plane of the illumination system to produce a plurality of images being partially superimposed on a field in the image plane. The field defines a non-rectangular intensity profile in the scanning direction.

Abstract: Projection exposure device and also projection objective with a lens arrangement which has at least one lens group of negative refractive power, this lens group comprising at least four lenses of negative refractive power, and a lens of positive refractive power being arranged after the third lens of negative refractive power in this lens group.

Abstract: A projection objective, particularly for microlithography at 248 nm or 193 nm has, after two bulges and two waists, a pronounced lens arrangement that preferably contains a further waist and the system diaphragm (AS). This is markedly set back from the negative lens group containing the second waist, and is surrounded by important correction devices. The highest numerical aperture (0.65-0.80) is attained with the smallest lens diameters and by paying heed to the further qualities required for such a microlithography projection objective.

Abstract: An aspheric reduction objective has a catadioptric partial objective (L1), an intermediate image (IMI) and a refractive partial objective (L2). The catadioptric partial objective has an assembly centered to the optical axis and this assembly includes two mutually facing concave mirrors (M1, M2). The cutouts in the mirrors (B1, B2) lead to an aperture obscuration which can be held to be very small by utilizing lenses close to the mirrors and having a high negative refractive power and aspheric lens surfaces (27, 33). The position of the entry and exit pupils can be corrected with aspherical lens surfaces (12, 48, 53) in the field lens groups. The number of spherical lenses in the refractive partial objective can be reduced with aspherical lens surfaces (66, 78) arranged symmetrically to the diaphragm plane. Neighboring aspheric lens surfaces (172, 173) form additional correction possibilities.

Abstract: The invention is directed to an optical unit having elements (6, 7) which are juxtaposed without an air gap therebetween. The two elements (6, 7) are joined by wringing the same to each other. At least one element (7) is of crystalline material and has an amorphous inorganic layer (70) on the side thereof facing toward the other element (6). The invention is also directed to a method of preparing an element made of crystalline material, such as a fluoride, as well as a method for making a thin optical element of the crystalline material.

Abstract: The invention relates to a large-apertured microlithography projection lens. The diaphragm error is also systematically corrected, so that the pupil plane is slightly curved and the lens can be stopped down without comprising quality. The system diaphragm of the projection lens is located in the area of the last lens cluster of positive refractive power on the image side. The telecentrics of the projection lens remain stable on the image side during stopping down.