Patents by Inventor Karl Heinz Schuster

Karl Heinz Schuster has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • MICROLITHOGRAPHY OPTICAL SYSTEM
    Publication number: 20070195411
    Abstract: The disclosure relates to an optical system, such as, for example, an illumination system or a projection lens of a microlithographic exposure system. The optical system can have an optical axis and include at least one optical element that includes an optically uniaxial material having, for an operating wavelength of the optical system, an ordinary refractive index no and an extraordinary refractive index ne. The extraordinary refractive index ne can be larger than the ordinary refractive index no. The optical element can absorb, at least for light rays of the operating wavelength entering the optical element with respect to the optical axis under an angle of incidence that lies within a certain angle region, a p-polarized component of the light rays significantly stronger than a s-polarized component of the light rays.
    Type: Application
    Filed: December 21, 2006
    Publication date: August 23, 2007
    Inventor: Karl-Heinz Schuster
  • Projection lens and method for performing microlithography
    Publication number: 20070195307
    Abstract: A projection lens for microlithography is provided comprising transparent optical elements not having direct contact and being spaced apart at most half of the wavelength the lens is designed for by a separator. Thus the corresponding gap is optically almost equivalent to a direct contact.
    Type: Application
    Filed: December 21, 2006
    Publication date: August 23, 2007
    Inventors: Karl-Heinz Schuster, Eric Eva
  • Very high-aperture projection objective
    Publication number: 20070188880
    Abstract: A very high-aperture, purely refractive projection objective having a multiplicity of optical elements has a system diaphragm (5) arranged at a spacing in front of the image plane. The optical element next to the image plane (3) of the projection objective is a planoconvex lens (34) having a substantially spherical entrance surface and a substantially flat exit surface. The planoconvex lens has a diameter that is at least 50% of the diaphragm diameter of the system diaphragm (5). It is preferred to arrange only positive lenses (32, 33, 34) between the system diaphragm (5) and image plane (3). The optical system permits imaging in the case of very high apertures of NA?0.85, if appropriate of NA?1.
    Type: Application
    Filed: March 20, 2007
    Publication date: August 16, 2007
    Inventor: Karl-Heinz Schuster
  • Illumination system particularly for microlithography
    Publication number: 20070120072
    Abstract: There is provided a projection objective for a projection exposure apparatus that has a primary light source for emitting electromagnetic radiation having a chief ray with a wavelength ?193 nm. The projection objective includes an object plane, a first mirror, a second mirror, a third mirror, a fourth mirror; and an image plane. The object plane, the first mirror, the second mirror, the third mirror, the fourth mirror and the image plane are arranged in a centered arrangement around a common optical axis. The first mirror, the second mirror, the third mirror, and the fourth mirror are situated between the object plane and the image plane. The chief ray, when incident on an object situated in the object plane, in a direction from the primary light source, is inclined away from the common optical axis.
    Type: Application
    Filed: January 3, 2007
    Publication date: May 31, 2007
    Applicant: Carl Zeiss SMT AG
    Inventors: Hans-Juergen Mann, Wolfgang Singer, Joerg Schultz, Johannes Wangler, Karl-Heinz Schuster, Udo Dinger, Martin Antoni, Wilhelm Ulrich
  • MICROLITHOGRAPHY PROJECTION OBJECTIVE WITH CRYSTAL LENS
    Publication number: 20070091451
    Abstract: Very high aperture microlithography projection objectives operating at the wavelengths of 248 nm, 193 nm and also 157 nm, suitable for optical immersion or near-field operation with aperture values that can exceed 1.4 are made feasible with crystalline lenses and crystalline end plates P of NaCl, KCl, KI, RbI, CsI, and MgO, YAG with refractive indices up to and above 2.0. These crystalline lenses and end plates are placed between the system aperture stop AS and the wafer W, preferably as the last lenses on the image side of the objective.
    Type: Application
    Filed: December 15, 2004
    Publication date: April 26, 2007
    Inventor: Karl-Heinz Schuster
  • Very high-aperture projection objective
    Patent number: 7203008
    Abstract: A very high-aperture, purely refractive projection objective having a multiplicity of optical elements has a system diaphragm (5) arranged at a spacing in front of the image plane. The optical element next to the image plane (3) of the projection objective is a planoconvex lens (34) having a substantially spherical entrance surface and a substantially flat exit surface. The planoconvex lens has a diameter that is at least 50% of the diaphragm diameter of the system diaphragm (5). It is preferred to arrange only positive lenses (32, 33, 34) between the system diaphragm (5) and image plane (3). The optical system permits imaging in the case of very high apertures of NA?0.85, if appropriate of NA?1.
    Type: Grant
    Filed: September 8, 2004
    Date of Patent: April 10, 2007
    Assignee: Carl Zeiss SMT AG
    Inventor: Karl-Heinz Schuster
  • Projection exposure machine comprising a projection lens
    Patent number: 7203007
    Abstract: A projection exposure machine comprises a projection lens with a lens arrangement and at least one stop. The lens arrangement comprises a group of optical elements which is arranged between the stop and the image plane. An optical element of the group situated close to the image plane has a thickness of at least 6.5% of the entire stop diameter.
    Type: Grant
    Filed: August 11, 2004
    Date of Patent: April 10, 2007
    Assignee: Carl Zeiss SMT AG
    Inventor: Karl-Heinz Schuster
  • MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS AND MEASURING DEVICE FOR A PROJECTION LENS
    Publication number: 20070070316
    Abstract: A microlithographic projection exposure apparatus includes a projection lens that is configured for immersion operation. For this purpose an immersion liquid is introduced into an immersion space that is located between a last lens of the projection lens on the image side and a photosensitive layer to be exposed. To reduce fluctuations of refractive index resulting from temperature gradients occurring within the immersion liquid, the projection exposure apparatus includes heat transfer elements that heat or cool partial volumes of the immersion liquid so as to achieve an at least substantially homogenous or at least substantially rotationally symmetric temperature distribution within the immersion liquid.
    Type: Application
    Filed: July 18, 2006
    Publication date: March 29, 2007
    Inventors: Albrecht Ehrmann, Ulrich Wegmann, Rainer Hoch, Joerg Mallmann, Karl-Heinz Schuster, Ulrich Loering, Toralf Gruner, Bernhard Kneer, Bernhard Geuppert, Franz Sorg, Jens Kugler, Norbert Wabra
  • Refractive projection objective
    Patent number: 7190527
    Abstract: Refractive projection objective with a numerical aperture greater than 0.7, consisting of a first convexity, a second convexity, and a waist arranged between the two convexities. The first convexity has a maximum diameter denoted by D1, and the second convexity has a maximum diameter denoted by D2, and 0.8<D1/D2<1.1.
    Type: Grant
    Filed: September 1, 2004
    Date of Patent: March 13, 2007
    Assignee: Carl Zeiss SMT AG
    Inventors: Hans-Juergen Rostalski, Karl-Heinz Schuster, Russell Hudyma, Wilhelm Ulrich, Rolf Freimann
  • Illumination system particularly for microlithography
    Patent number: 7186983
    Abstract: There is provided a projection objective for a projection exposure apparatus that has a primary light source for emitting electromagnetic radiation having a chief ray with a wavelength ?193 nm. The projection objective includes an object plane, a first mirror, a second mirror, a third mirror, a fourth mirror; and an image plane. The object plane, the first mirror, the second mirror, the third mirror, the fourth mirror and the image plane are arranged in a centered arrangement around a common optical axis. The first mirror, the second mirror, the third mirror, and the fourth mirror are situated between the object plane and the image plane. The chief ray, when incident on an object situated in the object plane, in a direction from the primary light source, is inclined away from the common optical axis.
    Type: Grant
    Filed: August 17, 2004
    Date of Patent: March 6, 2007
    Assignee: Carl Zeiss SMT AG
    Inventors: Hans-Juergen Mann, Wolfgang Singer, Joerg Schultz, Johannes Wangler, Karl-Heinz Schuster, Udo Dinger, Martin Antoni, Wilhelm Ulrich
  • Imaging system, in particular a projection objective of a microlithographic projection exposure apparatus
    Publication number: 20070035848
    Abstract: Imaging systems, in particular a projection objectives of a microlithographic projection exposure apparatus, are provided. The imaging systems can have an optical axis and produce an image field which is extra-axial relative to the optical axis. The imaging systems can include a first optical element which causes a first distribution of the retardation in a plane that lies perpendicular to the optical axis, and at least one second optical element which causes a second distribution of the retardation in a plane that lies perpendicular to the optical axis. The second distribution of the retardation can at least partially compensate the first distribution of the retardation. The first and the second optical elements can be designed without rotational symmetry relative to the optical axis.
    Type: Application
    Filed: July 25, 2006
    Publication date: February 15, 2007
    Inventor: Karl-Heinz Schuster
  • Very-high aperture projection objective
    Publication number: 20070019301
    Abstract: A very-high aperture, purely refractive projection objective is designed as a two-belly system with an object-side belly, an image-side belly and a waist (7) situated therebetween. The system diaphragm (5) is seated in the image-side belly at a spacing in front of the image plane. Arranged between the waist and the system diaphragm in the region of divergent radiation is a negative group (LG5) which has an effective curvature with a concave side pointing towards the image plane. The system is distinguished by a high numerical aperture, low chromatic aberrations and compact, material-saving design.
    Type: Application
    Filed: September 28, 2006
    Publication date: January 25, 2007
    Inventor: Karl-Heinz Schuster
  • RETICLE-MASKING OBJECTIVE WITH ASPHERICAL LENSES
    Publication number: 20070014028
    Abstract: A reticle-masking (REMA) objective for imaging an object plane onto an image plane has a condenser portion, an intermediate portion, and a field lens portion. The three portions together have no more than 10 lenses with a combined total of no more than five aspheric lens surfaces. Each of the three portions of the REMA objective has one or two aspheric lens surfaces.
    Type: Application
    Filed: September 21, 2006
    Publication date: January 18, 2007
    Applicant: Carl Zeiss SMT AG
    Inventors: Johannes Wangler, Karl-Heinz Schuster, Alexander Sohmer, Alexander Epple, Jurgen Grunwald, Jorg Schultz, Christa Muller
  • Optical element, in particular for an objective or an illumination system of a microlithographic projection exposure apparatus
    Publication number: 20070007491
    Abstract: The invention concerns an optical element, in particular for an objective or an illumination system of a microlithographic projection exposure apparatus, including a substrate which for light of a predetermined working wavelength which passes through the substrate causes a first retardation between mutually perpendicular polarization states, and a layer which is epitaxially grown on the substrate and which is made from a material with non-cubic crystal structure, which by virtue of natural birefringence causes a second retardation between mutually perpendicular polarization states, which at least partially compensates for the first retardation caused in the substrate.
    Type: Application
    Filed: April 28, 2006
    Publication date: January 11, 2007
    Inventors: Ralf Mueller, Olaf Dittmann, Michael Totzeck, Daniel Kraehmer, Christoph Zaczek, Karl-Heinz Schuster
  • Very-high aperture projection objective
    Patent number: 7154676
    Abstract: A very-high aperture, purely refractive projection objective is designed as a two-belly system with an object-side belly, an image-side belly and a waist (7) situated therebetween. The system diaphragm (5) is seated in the image-side belly at a spacing in front of the image plane. Arranged between the waist and the system diaphragm in the region of divergent radiation is a negative group (LG5) which has an effective curvature with a concave side pointing towards the image plane. The system is distinguished by a high numerical aperture, low chromatic aberrations and compact, material-saving design.
    Type: Grant
    Filed: September 1, 2004
    Date of Patent: December 26, 2006
    Assignee: Carl Zeiss SMT A.G.
    Inventor: Karl-Heinz Schuster
  • Projection objective having adjacently mounted aspheric lens surfaces
    Patent number: 7154678
    Abstract: A projection objective has at least five lens groups (G1 to G5) and has several lens surfaces. At least two aspheric lens surfaces are arranged so as to be mutually adjacent. These mutually adjacently arranged lens surfaces are characterized as a double asphere. This at least one double asphere (21) is mounted at a minimum distance from an image plane (0?) which is greater than the maximum lens diameter (D2) of the objective.
    Type: Grant
    Filed: March 15, 2005
    Date of Patent: December 26, 2006
    Assignee: Carl Zeiss Semiconductor Manufacturing Technologies AG
    Inventors: Karl-Heinz Schuster, David R. Shafer, Wilhelm Ulrich, Helmut Beierl, Wolfgang Singer
  • Projection objective for microlithography
    Patent number: 7154677
    Abstract: The invention relates to a projection lens comprising a lens assembly that has at least one first narrowing of the group of light beams. A lens with a non-spherical surface is located in front of and/or behind the first narrowing.
    Type: Grant
    Filed: September 16, 2004
    Date of Patent: December 26, 2006
    Assignee: Carl Zeiss Stiftung
    Inventor: Karl-Heinz Schuster
  • Illumination system particularly for microlithography
    Publication number: 20060245540
    Abstract: There is provided an illumination system for scannertype microlithography along a scanning direction with a light source emitting a wavelength ?193 nm. The illumination system includes a plurality of raster elements. The plurality of raster elements is imaged into an image plane of the illumination system to produce a plurality of images being partially superimposed on a field in the image plane. The field defines a non-rectangular intensity profile in the scanning direction.
    Type: Application
    Filed: February 2, 2006
    Publication date: November 2, 2006
    Inventors: Jorg Schultz, Johannes Wangler, Karl-Heinz Schuster, Udo Dinger, Wolfgang Singer, Martin Antoni, Joachim Wietzorrek, Joachim Hainz
  • Microlitographic projection exposure apparatus and immersion liquid therefore
    Publication number: 20060244938
    Abstract: An immersion liquid for a microlithographic projection exposure apparatus is enriched with heavy isotopes. This reduces the chemical reactivity, which leads to an extension of the lifetime of optical elements which come in contact with the immersion liquid. For example, heavy water (D2O), deuterated sulfuric acid, (D2SO4) or deuterated phosphoric acid D3P16O4 may be used. Organic compounds such as perfluoro polyethers, which have been deuterated or enriched with heavy oxygen (18O), are furthermore suitable.
    Type: Application
    Filed: December 27, 2004
    Publication date: November 2, 2006
    Inventor: Karl-Heinz Schuster
  • Reticle-masking objective with aspherical lenses
    Patent number: 7130129
    Abstract: A reticle-masking (REMA) objective for imaging an object plane onto an image plane has a condenser portion, an intermediate portion, and a field lens portion. The three portions together have no more than 10 lenses with a combined total of no more than five aspheric lens surfaces. Each of the three portions of the REMA objective has one or two aspheric lens surfaces.
    Type: Grant
    Filed: December 12, 2003
    Date of Patent: October 31, 2006
    Assignee: Carl Zeiss SMT AG
    Inventors: Jorg Schultz, Johannes Wangler, Karl-Heinz Schuster, Alexander Sohmer, Alexander Epple, Christa Müller, legal representative, Janosch Müller, legal representative, Jurgen Grunwald, deceased