Abstract: A projection exposure lens system has an object side catadioptric system, and intermediate image and a refractive lens system. The refractive lens system from its intermediate image side and in the direction of its image plane has a first lens group of positive refractive power, a second lens group of negative refractive power, a third lens group of positive refractive power, a fourth lens group of negative refractive power, and a fifth lens group of positive refractive power.

Abstract: An arrangement for microlithographic projection exposure at high aperture achieve a contrast increase by the polarization of the light perpendicular to the plane of incidence on the resist. Arrangements are provided which influence the tangential polarization or the linear polarization adapted to the dipole illumination in the illuminating system and in the reduction objective.

Abstract: Refractive projection objective with a numerical aperture greater than 0.7, consisting of a first convexity, a second convexity, and a waist arranged between the two convexities. The first convexity has a maximum diameter denoted by D1, and the second convexity has a maximum diameter denoted by D2, and 0.8<D1/D2<1.1.

Abstract: In a projection objective provided for imaging a pattern arranged in an object plane of the projection objective into an image plane of the projection objective with the aid of an immersion medium arranged between a last optical element of the projection objective in the light path and the image plane, the last optical element has a transparent substrate and a protective layer system that is fitted to the substrate, is provided for contact with the immersion medium and serves for increasing the resistance of the last optical element to degradation caused by the immersion medium.

Abstract: Projection exposure device and also projection objective with a lens arrangement which has at least one lens group of negative refractive power, this lens group comprising at least four lenses of negative refractive power, and a lens of positive refractive power being arranged after the third lens of negative refractive power in this lens group.

Abstract: A projection objective of a microlithographic projection exposure apparatus has a correction device which can correct photoinduced imaging errors without optical elements having to be removed for this purpose. The correction device includes a first optical element and a second optical element, whose surface facing the first optical element is provided with a local surface deformation for improving the imaging properties of the projection objective. In a wall, which seals an intermediate space formed between the first optical element and the second optical element, an opening is provided through which the intermediate space can be filled with a fluid. By modifying the refractive index of the fluid adjacent to the surface, the effect of the surface deformation can be modified in a straightforward way.

Abstract: A method and an arrangement for microlithographic projection exposure at high aperture achieve a contrast increase by the polarization of the light perpendicular to the plane of incidence on the resist. Arrangements are provided which influence the tangential polarization or the linear polarization adapted to the dipole illumination in the illuminating system and in the reduction objective.

Abstract: A microlithographic projection illumination system has a focus-detection system for optically detecting deviations of the image plane of a projection lens from the upper surface of a substrate arranged in the vicinity of its image plane. The focus-detection system has a system for coupling in at least one measuring beam that is obliquely incident on, and to be reflected at, the substrate surface into an intermediate zone between the final optical surface of the imaging system and the substrate surface and a system for coupling out the measuring beam and detecting it following its reflection at the substrate surface.

Abstract: A method and an arrangement for microlithographic projection exposure at high aperture achieve a contrast increase by the polarization of the light perpendicular to the plane of incidence on the resist. Arrangements are provided which influence the tangential polarization or the linear polarization adapted to the dipole illumination in the illuminating system and in the reduction objective.

Abstract: A projection objective has at least five lens groups (G1 to G5) and has several lens surfaces. At least two aspheric lens surfaces are arranged so as to be mutually adjacent. These mutually adjacently arranged lens surfaces are characterized as a double asphere. This at least one double asphere (21) is mounted at a minimum distance from an image plane (0?) which is greater than the maximum lens diameter (D2) of the objective.

Abstract: A very high-aperture, purely refractive projection objective having a multiplicity of optical elements has a system diaphragm (5) arranged at a spacing in front of the image plane. The optical element next to the image plane (3) of the projection objective is a planoconvex lens (34) having a substantially spherical entrance surface and a substantially flat exit surface. The planoconvex lens has a diameter that is at least 50% of the diaphragm diameter of the system diaphragm (5). It is preferred to arrange only positive lenses (32, 33, 34) between the system diaphragm (5) and image plane (3). The optical system permits imaging in the case of very high apertures of NA?0.85, if appropriate of NA?1.

Abstract: An illumination system for a projection exposure machine, operating with ultraviolet light, for microlithography has an angle-conserving light mixing device with at least one integrator rod that has an entrance surface for receiving light from a light source, and an exit surface for outputting exit light mixed by the integrator rod. At least one prism arrangement for receiving exit light and for varying the state of polarization of the exit light is placed downstream of the integrator rod. A preferred prism arrangement has a polarization splitter surface, aligned transversely to the direction of propagation of the exit light, which passes light fractions with p-polarization without hindrance, and reflects fractions with s-polarization. The separated beams with orthogonal polarization are parallelized by means of a reflecting surface aligned parallel to the polarization splitter surface, and the same state of polarization is set for both partial beams by means of a suitable retarder.

Abstract: A projection objective has at least five lens groups (G1 to G5) and has several lens surfaces. At least two aspheric lens surfaces are arranged so as to be mutually adjacent. These mutually adjacently arranged lens surfaces are characterized as a double asphere. This at least one double asphere (21) is mounted at a minimum distance from an image plane (0?) which is greater than the maximum lens diameter (D2) of the objective.

Abstract: A very-high aperture, purely refractive projection objective is designed as a two-belly system with an object-side belly, an image-side belly and a waist (7) situated therebetween. The system diaphragm (5) is seated in the image-side belly at a spacing in front of the image plane. Arranged between the waist and the system diaphragm in the region of divergent radiation is a negative group (LG5) which has an effective curvature with a concave side pointing towards the image plane. The system is distinguished by a high numerical aperture, low chromatic aberrations and compact, material-saving design.

Abstract: A refractive projection objective for use in microlithography with lenses made exclusively of one and the same material has an image-side numerical aperture larger than 0.7. A light bundle defined by the image-side numerical aperture and by the image field has within the objective a variable light-bundle diameter smaller than or equal to a maximum light-bundle diameter. In a length interval measured on the optical axis from the system diaphragm towards the object field and at least equaling the maximum light-bundle diameter, the variable light-bundle diameter exceeds 85% of the maximum light-bundle diameter.

Abstract: There is provided a projection objective for a projection exposure apparatus that has a primary light source for emitting electromagnetic radiation having a chief ray with a wavelength?193 nm. The projection objective includes an object plane, a first mirror, a second mirror, a third mirror, a fourth mirror; and an image plane. The object plane, the first mirror, the second mirror, the third mirror, the fourth mirror and the image plane are arranged in a centered arrangement around a common optical axis. The first mirror, the second mirror, the third mirror, and the fourth mirror are situated between the object plane and the image plane. The chief ray, when incident on an object situated in the object plane, in a direction from the primary light source, is inclined away from the common optical axis.

Abstract: An optical arrangement is disclosed wherein an entering beam is converted into an exiting beam having a total cross section of light which is linearly polarized essentially in the radial direction by rotation. For this purpose, rasters of half-wave plates (41, 42, 4i), a combination of birefringent quarter-wave plate 420 and a circular plate 430 is suggested in combination with a conical polarizer 21?. This arrangement is preferably utilized in the illumination portion of a microlithographic projection exposure system. It is important that the arrangement be mounted behind all asymmetric or polarizing component elements 103a.

Abstract: A method and an arrangement for microlithographic projection exposure at high aperture achieve a contrast increase by the polarization of the light perpendicular to the plane of incidence on the resist. Arrangements are provided which influence the tangential polarization or the linear polarization adapted to the dipole illumination in the illuminating system and in the reduction objective.

Abstract: A method and an arrangement for microlithographic projection exposure at high aperture achieve a contrast increase by the polarization of the light perpendicular to the plane of incidence on the resist. Arrangements are provided which influence the tangential polarization or the linear polarization adapted to the dipole illumination in the illuminating system and in the reduction objective.

Abstract: A microlithographic projection illumination system has a focus-detection system for optically detecting deviations of the image plane of a projection lens from the upper surface of a substrate arranged in the vicinity of its image plane. The focus-detection system has a system for coupling in at least one measuring beam that is obliquely incident on, and to be reflected at, the substrate surface into an intermediate zone between the final optical surface of the imaging system and the substrate surface and a system for coupling out the measuring beam and detecting it following its reflection at the substrate surface.