Abstract: An optoelectronic component includes a carrier having a first connection region and a second connection region, a radiation-emitting semiconductor chip having a base surface and a radiation exit surface opposite the base surface, wherein the semiconductor chip is arranged by the base surface on the carrier, a housing having a lower housing part arranged on the carrier and adjoining side flanks of the semiconductor chip, and an upper housing part arranged on the lower housing part and shaped as a reflector for radiation emitted by the semiconductor chip, and an electrical connection layer which leads from the radiation exit surface of the semiconductor chip via a part of the interface between the lower and the upper housing part and through the lower housing part to the first connection region on the carrier.

Abstract: With respect to an electronic component, in particular a power module, and in a corresponding method for producing or contact-connecting said component, the component (1) is fastened to an electrically insulating carrier film (3) having at least one first inorganic material and at least one opening (5) in which at least one electrical contact-connection (7) of the component (1) to outside the component (1) is provided. This makes it possible to provide electronic components (1), in particular power modules, for a temperature range of >175 DEG C.

Abstract: At least two separate single-crystal silicon layers are formed in a micromechanical substrate which has a diaphragm in a partial region. The diaphragm has a thickness of less than 20 ?m and includes part of a first of the single-crystal silicon layers. The substrate construction also includes a heating element configured to generate a temperature of more than 650° C. in at least part of the diaphragm. The substrate includes at least one diffusion barrier layer that reduces the oxidation of the first single-crystal silicon layer.

Abstract: A method of producing an optoelectronic semiconductor component includes providing a carrier having a top side, an underside situated opposite the top side, and a plurality of connection areas arranged at the top side alongside one another in a lateral direction; applying a plurality of optoelectronic components arranged at a distance from one another in a lateral direction at the top side, the components having a contact area facing away from the carrier; applying protective elements to the contact and connection areas; applying an electrically insulating layer to exposed locations of the carrier, contact areas and protective elements; producing openings in the insulating layer by removing protective elements; and arranging an electrically conductive material on the insulating layer and in the openings, wherein the electrically conductive material connects a contact area to an assigned connection area.

Abstract: An optoelectronic component includes a carrier element. At least two elements are arranged in an adjacent fashion on a first side of the carrier element. Each element has at least one optically active region for generating the electromagnetic radiation. The optoelectronic component has an electrically insulating protective layer arranged at least in part on a surface of the at least two adjacent elements which lies opposite the first side. The protective layer, at least in a first region arranged between the at least two adjacent elements, at least predominantly prevents a transmission of the electromagnetic radiation generated by the optically active regions.

Abstract: A radiation-emitting component includes a semiconductor chip which has a first main surface, a second main surface on an opposite side from the first main surface and an active region that generates radiation; a carrier on which the semiconductor chip is fixed on the side of the second main surface; an output layer arranged on the first main surface of the semiconductor chip and forming a lateral output surface spaced apart from the semiconductor chip in a lateral direction, a recess tapering in a direction of the semiconductor chip being, formed in the output layer and deflecting radiation emerging from the first main surface during operation into the direction of the lateral output surface.

Abstract: An optoelectronic component includes a protective layer including a material containing hydrophobic groups. Furthermore, a method is described, by means of which an optoelectronic component can be produced, and in which a protective layer including hydrophobic groups is applied.

Abstract: An optoelectronic module is described including a carrier substrate and a plurality of radiation-emitting semiconductor components. The carrier substrate includes structured conductor tracks. The radiation-emitting semiconductor components each include an active layer suitable for generating electromagnetic radiation, a first contact area and a second contact area. The first contact area is in each case arranged on that side of the radiation-emitting semiconductor components that is remote from the carrier substrate. The radiation-emitting semiconductor components are provided with an electrically insulating layer, which in each case has a cutout in a region of the first contact area. Conductive structures are arranged in regions on the electrically insulating layer.

Abstract: A semiconductor chip device including a surface on which at least one electrical contact surface is provided. A foil from an electrically insulating material is applied, especially by vacuum, to the surface and rests closely to the surface and adheres to the surface. The foil, in the area of the contact surface, is provided with a window in which the contact surface is devoid of the foil and is contacted across a large area to at least one layer from an electroconductive material. In at least one embodiment, the layer from the electroconductive material is part of a flexible contact for electrically connecting the contact surface to at least one external connecting conductor.

Abstract: An electric functional layer is produced on a surface of a substrate, having at least an electronic component, particularly a semiconductor chip, provided thereof. The electric functional layer is formed using particles in powder of an electrically conductive material. The functional layer is blown on the surface of the substrate to form a thick and strong adhesive layer on impact with the substrate.

Abstract: An optoelectronic module is provided which comprises a first semiconductor body (2) with a radiation exit side (2a) on which an electrical connection region (21, 22) is arranged. The first semiconductor body (2) is arranged with its side opposite the radiation exit side (2a) on a carrier (1). An insulation material (3) is arranged on the carrier (1) laterally next to the first semiconductor body (2), which material forms a fillet and adjoins the semiconductor body (2) form-fittingly. An insulation layer (4) is arranged at least in places on the first semiconductor body (2) and the insulation material (3), on which layer a planar conductive structure is arranged for planar contacting of the first semiconductor body (2), which conductive structure is electrically conductively connected with the electrical connection region (21, 22). A method of producing such an optoelectronic module is furthermore provided.

Abstract: An optoelectronic module has at least one carrier with at least one contact location. A semiconductor chip emitting radiation includes a first contact surface and a second contact surface. An electrically insulating layer has a first and a second recess. The first contact surface is disposed on the side of the semiconductor chip emitting radiation facing away from the carrier. The electrically insulating layer is applied at least in places to the carrier. The semiconductor chip includes the first recess in the area of the first contact surface and the second recess in the area of the contact location. A electrically conductive conductor structure is disposed on the electrically insulating layer. The first contact surface electrically contacts the contact location of the carrier. The electrically insulating layer is formed predominately from a ceramic material.

Abstract: An optoelectronic component comprising at least one semiconductor body having a radiation exit side, said semiconductor body being arranged by a side lying opposite the radiation exit side on a substrate, wherein at least one electrical connection region, on which a metallization bump is arranged, is arranged on the radiation exit side, the semiconductor body is at least partly provided with an insulating layer, wherein the metallization bump projects beyond the insulating layer, and at least one planar conductor structure is arranged on the insulating layer for the purpose of making contact with the semiconductor body in planar fashion, said conductor structure being electrically conductively connected to the electrical connection region by the metallization bump.

Abstract: One unhoused electronic component, e.g., a semiconductor power component, has at least one connecting surface disposed on a top side and/or on a bottom side for fastening and/or for electric contacting. One side of the component is attached to and/or electrically contacts a direct copper bonding ceramic substrate, at an opposing connecting surface in the region of the connecting surface. An electrically insulating carrier film is created on the substrate on the side facing the component outside the region of the connecting surface and extending beyond the bottom side. An electrically conducting conductor part is attached to and/or electrically contacts the connecting surface on the top side. A pre-formed, three dimensional structure is formed extending beyond the area of the top side, thus creating an electrically insulating mass between the carrier film and the three-dimensional structure of the conductor part.

Abstract: An opto-electronic component has a carrier element (3) with a connection region (5). Arranged on the carrier element (3) is a semiconductor chip (7). A contact region (10) is mounted on the surface (8) of the semiconductor chip (7) remote from the carrier element (3). The connection region (5) is electrically conductively connected to the contact region (10) by way of an unsupported conductive structure (13). A method for manufacturing an opto-electronic component is described.

Abstract: In one embodiment of the present invention, a method is disclosed for contacting at least one electric contact surface on a surface of a substrate and/or a surface of a semiconductor chip arranged on a substrate. According to one embodiment of the invention, a film of electrically insulating plastic material is laminated onto the surfaces. A large-area contacting of the contact surfaces, which are freely accessible via the openings in the film, with a layer of electrically conductive material is then carried out. It is the aim of a planar electric contacting method to produce openings in an insulation during a short period of processing time. In particular, openings are to be positioned at a precise position to the contact surfaces. To achieve this, openings are produced in the film of electrically insulating plastic material in the region of the contact surface to be contacted by means of laser cutting and prior to laminating. This method is suitable for all planar contacting processes.

Abstract: The present invention relates to waveguides, e.g., waveguides in a dielectricwall accelerator, and to methods for the manufacture thereof. For example, planar contact electronic assemblies may be integrated in a waveguide e.g., a waveguide of an accelerator cell of a dielectricwall accelerator.

Abstract: A method for producing an optoelectronic semiconductor component includes providing a carrier; arranging at least one optoelectronic semiconductor chip at a top side of the carrier; shaping a shaped body around the at least one optoelectronic semiconductor chip, wherein the shaped body covers all side areas of the at least one optoelectronic semiconductor chip, and wherein a surface facing away from the carrier at the top side and/or a surface facing the carrier at the underside of the at least one semiconductor chip remains substantially free of the shaped body or is exposed, and removing the carrier.

Abstract: An optoelectronic module is specified, comprising a carrier substrate (1) and a plurality of radiation-emitting semiconductor components (2). The carrier substrate (1) comprises structured conductor tracks. The radiation-emitting semiconductor components (2) each comprise an active layer (2a) suitable for generating electromagnetic radiation, a first contact area (21) and a second contact area (22), wherein the first contact area (21) is in each case arranged on that side of the radiation-emitting semiconductor components (2) which is remote from the carrier substrate (1). The radiation-emitting semiconductor components (2) are provided with an electrically insulating layer (4), which in each case has a cutout in a region of the first contact area (21). Conductive structures (8) are arranged in regions on the electrically insulating layer (4).

Abstract: An electric functional layer is produced on a surface of a substrate, having at least an electronic component, particularly a semiconductor chip, provided thereof. The electric functional layer is formed using particles in powder of an electrically conductive material. The functional layer is blown on the surface of the substrate to form a thick and strong adhesive layer on impact with the substrate.