Abstract: A device is disclosed with at least one electrically insulating layer on which at least one conductor structure made of electrically conductive material is placed. In at least one embodiment, the conductor structure on the side facing the insulating layer has at least one elevation that is accommodated in at least one recess in the insulating layer.

Abstract: A film, based on polyimide or epoxy, is laminated onto a surface of a substrate under a vacuum, so that the film closely covers the surface and adheres thereto. Contact surfaces to be formed on the surface are uncovered by opening windows in the film. A contact is established in a plane manner between each uncovered contact surface and a layer of metal. This establishes a large-surface contact providing high current density for power semiconductor chips.

Abstract: A semiconductor chip device including a surface on which at least one electrical contact surface is provided. A foil from an electrically insulating material is applied, especially by vacuum, to the surface and rests closely to the surface and adheres to the surface. The foil, in the area of the contact surface, is provided with a window in which the contact surface is devoid of the foil and is contacted across a large area to at least one layer from an electroconductive material. In at least one embodiment, the layer from the electroconductive material is part of a flexible contact for electrically connecting the contact surface to at least one external connecting conductor.

Abstract: A method for producing at least one semiconductor component group, in particular a SiC semiconductor component group, includes the step of producing a number of semiconductor components on a substrate, particularly on a wafer. The individual semiconductor components are tested for detecting operative semiconductor components. At least one semiconductor component group is assembled, which is formed of a number of operative semiconductor components and which forms a coherent flat structure. The operative semiconductor components of the semiconductor component group are electrically connecting in parallel.

Abstract: A method for enveloping components arranged on a substrate, with a film which is made of an electrically insulating plastic material, and the substrate. The film is placed on the components to be enveloped on the side thereof facing away from the substrate. Elastically or plastically deformable impression material is placed onto the film on the side thereof which faces away from the components to be enveloped. The impression material is pressed against the film in the direction of the components and the substrate and the impression material is removed.

Abstract: A self-supporting contacting structure is directly produced on a component that does not have a housing by applying a layer made of non conducting material and a layer made of an electrically conductive material to the component and to a support and by subsequently removing these layers from said support.

Abstract: An embodiment of the present invention discloses a method for contacting at least one electrical contact surface on a surface of a substrate and/or at least one component arranged on the substrate, especially a semiconductor chip. The method includes the following steps: at least one insulating film consisting of an electrically insulating plastic material is laminated, under a vacuum, onto the surfaces of the substrate and the component including the contact surface; and the contact surface to be contacted on the surfaces is bared by opening a window in the insulating film. An embodiment of the present invention further comprises sheet contacting the bared contact surface with at least one metallisation on an insulating film.

Abstract: A method for producing a dielectric layer extending between two or more elements of an electronic component includes arranging a free-standing dielectric layer above the elements and a deformable support layer below the elements. The free-standing dielectric layer is laminated onto at least a portion of the first surface of the first element and onto at least a portion of the first surface of the second element such that a portion of the dielectric layer extends between the first surface of the first element and the first surface of the second element.

Abstract: A layer of electrically insulating material is applied to a substrate and a component located thereon, in such a way that said layer follows the surface contours.

Abstract: An economical miniaturized assembly and connection technology for LEDs and other optoelectronic modules is provided. A manufactured item in accordance with this technology includes a substrate with an optoelectronic component contacted in a planar manner.

Abstract: A layer of electrically insulating material is applied to a substrate and a component located thereon, in such a way that said layer follows the surface contours.

Abstract: An electrical component is mounted on a substrate. At least one electrical insulation film is provided to electrically insulate the component and at least section of the insulation film is connected to the component and the substrate, in such a way that the surface contours of said section of the insulation film are moulded to the surface contours formed by the component and the substrate. The insulation film has dielectric strength in relation to an electric field strength of more than 10 kV/mm and preferably more than 50 kV/mm. To produce the assembly, the insulation film is laminated onto the substrate, preferably by means of a vacuum. The component is in particular a power semiconductor component.

Abstract: According to the invention, a layer made of an electrically insulating material is applied to a substrate and a component that is arranged thereupon in such way that said layer follows the surface contour formed by the substrate and the component.

Abstract: A self-supporting contacting structure is directly produced on a component that does not have a housing by applying a layer made of non conducting material and a layer made of an electrically conductive material to the component and to a support and by subsequently removing these layers from said support.

Abstract: An electrical component is placed on a substrate. At least one film comprising a plastic material is connected to the component and to the substrate in such a way that a surface contour defined by the component and the substrate is represent is represented in a surface contour of the part of the film. Said film is laminated onto the component and the substrate in such a way that the film follows the topology of the arrangement consisting of the component and the substrate. Said film is in contact with the component and the substrate in a positive and non-positive manner, and comprises a composite material containing a filler that is different to the plastic material. The processability and electrical properties of the film are influenced by the filler or the composite material obtained thereby. In this way, other functions can be integrated into the film. Said component is, for example, a power semiconductor component. An electrically insulating and thermoconductive film is used, for example.

Abstract: A layer of electrically insulating material is applied to a substrate and a component located thereon, in such a way that said layer follows the surface contours.

Abstract: A component is connected to a circuit carrier via contacts which place the component at a distance from the circuit carrier. A foil is applied to the component and the circuit carrier so that it lies close to the surface of the circuit carrier on which the component is located and to the sides of the component not facing the circuit carrier. After being applied to the component and the circuit carrier the film is provided with a metal coating.

Abstract: A film, based on polyimide or epoxy, is laminated onto a surface of a substrate under a vacuum, so that the film closely covers the surface and adheres thereto. Contact surfaces to be formed on the surface are uncovered by opening windows in the film. A contact is established in a plane manner between each uncovered contact surface and a layer of metal. This establishes a large-surface contact providing high current density for power semiconductor chips.

Abstract: An electronic component such as a surface acoustic wave component has a chip a piezoelectric substrate with electrically conductive structures thereon and a base plate having external electrical terminal elements that are contacted to the electrically conductive structures of the chip. A protective film is applied onto the chip surface carrying the electrically conductive structures. The surface of the protective film facing away from the piezoelectric substrate carries electrical contact elements that are connected, to the electrically conductive structures of the chip via through-contacts in the protective film and/or directly via bumps, as well as to the electrical terminal elements of the base plate.

Abstract: The multiple blank can be diced into individual blanks for electronic components, in particular surface acoustic wave components. Each of the individual blanks is suitable for contact to be made with chips in the flip-chip technique and for contact to be made with the individual blanks in the SMD technique, using external connections. The multiple blank has, for each individual blank, metalized areas which are located on a network which is integrated between layers of the multiple blank and leads to a connecting terminal. Bumps are built up by depositing metal by electroplating on the metalized areas.