Abstract: A semiconductor memory device according to the present invention comprise a plurality of arrays each supplied with a common column address signal. In an selected array, the potential of a data line is set to a potential corresponding to a potential supplied to a corresponding bit line in response to the potential of the bit line, the potential of the corresponding column address signal and the potential of a terminal. In non-selected array other than the selected array at this time, since the potential of a terminal in the non-selected array is set to a potential different from that of the terminal in the selected array, the potential of the data line remains unchanged irrespective of the column address signal.

Abstract: A semiconductor memory device according to the present invention comprise a plurality of arrays each supplied with a common column address signal. In an selected array, the potential of a data line is set to a potential corresponding to a potential supplied to a corresponding bit line in response to the potential of the bit line, the potential of the corresponding column address signal and the potential of a terminal. In non-selected array other than the selected array at this time, since the potential of a terminal in the non-selected array is set to a potential different from that of the terminal in the selected array, the potential of the data line remains unchanged irrespective of the column address signal.

Abstract: A booster power generating circuit according to the present invention comprises first to fourth booster circuits for supplying first to fourth booster potentials to first to fourth nodes in response to first to fourth pulse signals, a first precharge circuit for precharging the first node when controlled by the fourth booster potential from the fourth node, a second precharge circuit for precharging the third node when controlled by the second booster potential from the second node and a first output circuit for outputting the first booster potential of the first node to an output node, whereby a given booster potential can be output since there is no voltage drop of the boosted potential of the second and fourth nodes, there is obtained high potential between the first and third precharge circuits and the precharging speed of the first and third node is not slowed.

Abstract: A booster power generating circuit according to the present invention comprises first to fourth booster circuits for supplying first to fourth booster potentials to first to fourth nodes in response to first to fourth pulse signals, a first precharge circuit for precharging the first node when controlled by the fourth booster potential from the fourth node, a second precharge circuit for precharging the third node when controlled by the second booster potential from the second node and a first output circuit for outputting the first booster potential of the first node to an output node, whereby a given booster potential can be output since there is no voltage drop of the boosted potential of the second and fourth nodes, there is obtained high potential between the first and third precharge circuits and the precharging speed of the first and third node is not slowed.

Abstract: A semiconductor memory circuit selects one memory cell group in response to an address signal having block selection information, first and second significant bit information. First, to third memory cell blocks respectively have memory cell groups each including memory cells. First, to third decoder groups respectively have first decoders each coupled to one memory cell group in the first memory cell block, second decoders each coupled to one memory cell group in the second memory cell block, and third decoders each coupled to one memory cell group in the third memory cell block. First and second logic circuits respectively output a first common block selection signal with respect to the first and second memory cell blocks in response to the block selection information of the address signal, and a second common block selection signal with respect to the second and third memory cell blocks in response to the block selection information of the address signal.

Abstract: A semiconductor memory device has plural memory cell blocks, each including memory cells storing data therein. A data bus and switching circuits transfer data from the memory cells to the data bus in response to a first logic level signal applied thereto. Column lines each have first and second ends. Each column line is connected to the corresponding switching circuit in each of the memory cell blocks. A column decoder, coupled to the first end of the column lines, provides the first logic level signal to one of the column lines upon the memory cell blocks being accessed. Potential setting circuits are coupled to the second end of the column lines, and preliminarily set the respective column lines to be in a predetermined potential so that each switching circuit is inactive prior to the column decoder providing the first logic level signal. All the memory cells in an array can be prevented from becoming inoperative even if a column line is broken.

Abstract: A semiconductor memory circuit selects one memory cell group in response to an address signal having block selection information, first and second significant bit information. First to third memory cell blocks respectively have memory cell groups each including memory cells. First to third decoder groups respectively have first decoders each coupled to one memory cell group in the first memory cell block, second decoders each coupled to one memory cell group in the second memory cell block, and third decoders each coupled to one memory cell group in the third memory cell block. First and second logic circuits respectively output a first common block selection signal with respect to the first and second memory cell blocks in response to the block selection information of the address signal, and a second common block selection signal with respect to the second and third memory cell blocks in response to the block selection information of the address signal.

Abstract: An automobile rear underbody structure which comprises generally elongated side frames extending in a direction lengthwise of an automobile body structure and each having a front and rear frame portions. The rear frame portion of each side frame lies in a level offset upwardly relative to the front frame portion. The rear frame portion has a depressed zone defined at a predetermined position thereof to permit the rear frame portion to bend downwardly when an external impact greater than a predetermined value is applied thereto.

Abstract: Piperidine derivatives having the formula ##STR1## wherein R' represents an alkyl, an acyl, an alkoxycarbonyl, an amino or nitroso group;X represents oxygen or sulfur;Y represents oxygen, sulfur or a group of the formula .dbd.N--R" in which R" is hydrogen or alkyl;Z represents oxygen or a group of the formula >N--R'" in which R'" is hydrogen or alkyl;n is an integer of 1 to 4; andR represents, when n is 1, alkyl, aryl, cycloalkyl, alkoxycarbonyl, substituted phosphino or substituted phosphinyl, when n is 2, alkylene, alkenylene, arylene, aralkylene; alkylenediphenylene, bis-(alkoxycarbonyl) alkylene, alkylene-bis-(oxycarbonylalkyl), dialkylene ether or diphenylene ether, when n is 3, alkanetriyl,tris-(alkoxycarbonyl)alkanetriyl, alkanetriyl-tris-(oxycarbonylalkyl) or a group of the formula ##STR2## in which p is an integer of 1 through 8 inclusive, and, when n is 4, alkanetetrayl,tetrakis-(alkoxycarbonyl) alkanetetrayl or alkanetetrayl-tetrakis-(oxycarbonylalkyl).

Abstract: A novel piperidine derivative having a stabilizing effect on a synthetic polymeric material and a composition comprising said piperidine derivative and a synthetic polymeric material.

Abstract: A novel piperidine derivative having a stabilizing effect on a synthetic polymeric material and a composition comprising said piperidine derivative and a synthetic polymeric material.

Abstract: A synthetic polymer composition stabilized against photo- and thermal-deterioration comprising a stabilizing amount of a compound having the formula ##STR1## wherein R' represents an alkyl, an acyl, an alkoxycarbonyl, an amino or nitroso group;X represents oxygen or sulfur;Y represents oxygen, sulfur or a group of the formula = N - R" in which R" is hydrogen or alkyl;Z represents oxygen or a group of the formula >N - R'" in which R'" is hydrogen or alkyl;N is an integer of 1 to 4; andR represents, when n is 1, alkyl, aryl, cycloalkyl, alkoxycarbonyl, substituted phosphino or substituted phosphinyl, when n is 2, alkylene, alkenylene, arylene, aralkylene; alkylenediphenylene, bis-(carboxycarbonyl) alkylene, alkylene-bis-(oxycarbonylalkyl), dialkylene ether or diphenylene ether, when n is 3, alkanetriyl, tris-(alkoxycarbonyl)alkanetriyl, alkanetriyl-tris-(oxycarbonylalkyl) or a group of the formula ##STR2## in which p is an integer of 1 through 8 inclusive, and, when n is 4, alkanetetrayl,tetrakis-(alkoxycarb

Abstract: A novel piperidine derivative having a stabilizing effect on a synthetic polymeric material and a composition comprising said piperidine derivative and a synthetic polymeric material.

Abstract: Novel piperidine derivatives of formula: ##STR1## (wherein 2 or 3 of R.sub.1, R.sub.2, R.sub.3, R.sub.4 and R.sub.5 represent alkyl groups having from 1 to 4 carbon atoms and the remainder of R.sub.1, R.sub.2, R.sub.3, R.sub.4 and R.sub.5 are hydrogen atoms, and R.sub.6 represents a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, a substituted alkyl group, an aliphatic acyl group, an alkoxycarbonyl group or an aralkoxycarbonyl group) are useful as stabilizers for synthetic polymers.

Abstract: Piperidine-spiro-hydrantoin derivatives having the formula ##STR1## wherein X represents oxygen atom or sulfur atom; n is an integer of 1 to 4 inclusive; andR represents, when n is 1, an alkenyl group which may be substituted with halogen, an alkynyl group which may be substituted with phenyl, an aralkyl group which may be substituted with halogen, alkyl of 1 to 4 carbon atoms or halomethyl, a hydroxyalkyl group, an alkoxyalkyl group, an alkenyloxyalkyl group, an acryloxyalkyl group, an alkylthioalkyl group, an acyloxyalkyl group, an epoxyalkyl group, an N-alkyl-substituted aminoalkyl group, an alkoxycarbonylalkyl group, an aryloxycarbonylalkyl group, an aliphatic acyl group, an alkoxycarbonyl group, a phosphino group which is substituted with phenoxy or alkoxy or a phosphinyl group which is substituted with phenoxy or alkoxy,When n is 2, an alkenylene group of 4 to 18 carbon atoms, a dialkyleneether group, an aralkylene group, a bis(acyloxyalkylene) group or an alkylene-bis(oxycarbonylalkyl) group,When n is

Abstract: Piperidine-spiro-hydantoin derivatives having the formula ##SPC1##Wherein X represents oxygen atom or sulfur atom; n is an integer of 1 to 4 inclusive, and R represents various aliphatic or aromatic groups depending on the value of n.These compounds (I) are useful as stabilizers against photo and thermal deterioration of various synthetic polymers and can be prepared, for example, by reacting the corresponding 3-unsubstituted piperidine-spiro-hydantoin compound with the halide R-(X.sub.1).sub.n in which R and n are as defined herein and X.sub.1 is a halogen atom.

Abstract: Piperidine derivatives having the formula ##SPC1##WhereinR' represents an alkyl group, a substituted alkyl group, an acyl group, an alkoxycarbonyl group, a substituted alkoxycarbonyl group, an amino group, a substituted amino group, or nitroso group;X represents oxygen atom or sulfur atom;Y represents oxygen atom, sulfur atom or a group of the formula = N -- R" in which R" is hydrogen atom, an alkyl group or a substituted alkyl group;Z represents oxygen atom or a group of the formula >N -- R'" in which R'" is hydrogen atom, an alkyl group or a substituted alkyl group;n is an integer of 1 through 4 inclusive; andR represents, when n is 1, an alkyl group, a substituted alkyl group, an aryl group, a substituted aryl group, a cycloalkyl group, an alkoxycarbonyl group, a substituted alkoxycarbonyl group, a substituted phosphino group or a substituted phosphinyl group, when n is 2, an alkylene group, an alkenylene group, an arylene group, a substituted arylene group, an aralkylene group; an alkylenediphenylene g

Abstract: 4-Piperidone ketal derivatives of the formulae ##SPC1##And ##SPC2##Wherein R.sub.1 represents an alkyl group of 1 to 8 carbon atoms and R.sub.2 represents an alkylene group of 2 or 3 carbon atoms or o-phenylene group and they are prepared by reacting triacetonamine with a monohydric alcohol of the formulaR.sub.1 --OH (III)wherein R.sub.1 is as defined above or a dihydric alcohol or phenol of the formulaR.sub.2 --(OH).sub.2 (IV)wherein R.sub.2 is as defined above in the presence of an acid catalyst. They are useful as statilizers against deterioration of synthetic polymers.

Abstract: 4-Piperidone derivatives having the formulae ##SPC1##Wherein R represents a phenyl or naphthyl group which may be substituted with nitro, lower alkyl, halogen, hydroxyl, lower alkyl hydroxy, hydroxy lower alkyl or formyl or a 5- or 6-membered heterocyclic group having as a hetero atom at least one of oxygen atom, sulfur atom and nitrogen atom and R.sub.1 represents hydrogen atom or an alkyl group of 1 to 4 carbon atoms. They are useful as stabilizers for various synthetic polymers against their photo- and thermal-deteriorations and the 4-piperidone derivatives (II) are prepared from the corresponding 2,2,6,6-tetramethyl-4-oxopiperidine derivatives by reaction with an aldehyde and the 4-piperidone derivatives (I) are prepared from the 4-piperidone derivatives (II) through dehydration.