Patents by Inventor Katsuaki Natori

Katsuaki Natori has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device, apparatus and method for manufacturing the same
    Publication number: 20040155278
    Abstract: An apparatus for manufacturing a semiconductor device is disclosed which comprises a chamber which holds a to-be-processed substrate having a film containing at least one kind of metal element which will become a component of a volatile metal compound, a heater which heats the substrate held in the chamber, and an adsorbent which is provided in the chamber and which adsorbs the volatile metal compound generated from the film by heating the substrate.
    Type: Application
    Filed: April 10, 2003
    Publication date: August 12, 2004
    Inventors: Katsuaki Natori, Keisuke Nakazawa, Koji Yamakawa, Hiroyuki Kanaya, Yoshinori Kumura, Hiroshi Itokawa, Osamu Arisumi
  • Semiconductor device and method for manufacturing the same
    Publication number: 20020190290
    Abstract: A semiconductor device comprising a semiconductor substrate, and a plurality of capacitors formed on the semiconductor substrate. The capacitors comprise a plurality of lower electrodes formed on the semiconductor substrate, a ferroelectric film formed continuously covering the plurality of lower electrodes, and an upper electrode formed on the surface of the ferroelectric film, wherein each of the capacitors is formed for each of the plurality of lower electrode.
    Type: Application
    Filed: August 19, 2002
    Publication date: December 19, 2002
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Katsuaki Natori, Tomohiro Saito, Yoshihiro Uozumi
  • Semiconductor device and method for manufacturing the same
    Patent number: 6459111
    Abstract: A semiconductor device comprising a semiconductor substrate, and a plurality of capacitors formed on the semiconductor substrate. The capacitors comprise a plurality of lower electrodes formed on the semiconductor substrate, a ferroelectric film formed continuously covering the plurality of lower electrodes, and an upper electrode formed on the surface of the ferroelectric film, wherein each of the capacitors is formed for each of the plurality of lower electrode.
    Type: Grant
    Filed: June 30, 2000
    Date of Patent: October 1, 2002
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Katsuaki Natori, Tomohiro Saito, Yoshihiro Uozumi
  • Device having dielectric thin film
    Patent number: 5442585
    Abstract: According to the present invention, there is provided a device having dielectric thin film comprising an impurity-containing first electrode having a perovskite-type crystal structure and made of the first dielectric material, a dielectric thin film made of the second dielectric material epitaxially deposited on the surface of the first electrode, and the second electrode provided on the surface of the dielectric thin film.
    Type: Grant
    Filed: July 7, 1993
    Date of Patent: August 15, 1995
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Kazuhiro Eguchi, Katsuaki Natori