Abstract: A bonding member (10) includes surface-processed silver surfaces (11a, 11b).

Abstract: An object of the present invention is to provide a method for producing a conductive material that allows a low electric resistance to be generated, and that is obtained by using an inexpensive and stable conductive material composition containing no adhesive. The conductive material can be provided by a producing method that includes the step of sintering a first conductive material composition that contains silver particles having an average particle diameter (median diameter) of 0.1 ?m to 15 ?m, and a metal oxide, so as to obtain a conductive material. The conductive material can be provided also by a method that includes the step of sintering a second conductive material composition that contains silver particles having an average particle diameter (median diameter) of 0.1 ?m to 15 ?m in an atmosphere of oxygen or ozone, or ambient atmosphere, at a temperature in a range of 150° C. to 320° C., so as to obtain a conductive material.

Abstract: A bonding structure (100) of the present invention includes a substrate (110), a metal film (120), a semiconductor element (130). The substrate (110), the metal film (120), and the semiconductor element (130) are laminated in order just mentioned. The metal film (120) contains a metal diffused through stress migration, and the substrate (110) and the semiconductor element (130) are bonded together with the metal film (120) therebetween.

Abstract: A bonding device (100) bonds at least one component (C) to a substrate (B) using a metal material (M). The bonding device (100) includes a wall section (20), at least one pressing section (40), and a rotational shaft (30). The rotational shaft (30) is fixed to the wall section (20). Each pressing section (40) has an arm (42) and a presser (43) or a substrate supporting member (90). The arm (42) extends from the rotational shaft (30). The arm (42) pivots about the rotational shaft (30). The presser (43) presses the component (C). The substrate supporting member (90) is disposed on a reference surface (142). The substrate supporting member (90) supports the substrate (B). The component (C) is bonded to the substrate (B) through point contact of the presser (43) with the component (C) or point contact of the substrate supporting member (90) with the reference surface (142).

Abstract: Provided is an electrode like a protruding electrode that is self-standing on a substrate. A conductive paste (202) contains a conductive powder, an alcoholic liquid component, and no adhesives. The conductive powder contains conductive particles having a thickness of 0.05 ?m or more and 0.1 ?m or less and a representative length of 5 ?m or more and 10 ?m or less, the representative length being a maximum diameter in a plane perpendicular to the direction of the thickness. The weight percentage of the alcoholic liquid component relative to the conductive paste is 8% or more and 20% or less.

Abstract: A bonding material (10) of the present invention includes an amorphous silver film (12).

Abstract: A silver particle synthesizing method includes reducing a dispersant from first silver particles each covered with the dispersant to obtain second silver particles. The method further includes synthesizing third silver particles each having a larger particle diameter than the second silver particles by causing a reaction between a silver compound and a reductant in a liquid phase containing the second silver particles.

Abstract: Provided are a metal nanowire production method capable of producing long and thin metal nanowires, and metal nanowires produced thereby. A metal nanowire production method comprising, a step for preparing a solution containing a metal salt, a polymer, at least one selected from a group consisting of halides, sulfides, carbonates, and sulfates, and an aliphatic alcohol, and a step for heating and reacting the solution at the temperature of 100° C. to 250° C. for 10 minutes or more while maintaining a practical shear stress applied to the solution at 10 mPa·m or less, wherein, during the heating and reacting step, ultraviolet-visible absorption spectrum change of the solution is measured, and a reaction time is controlled on the basis of the ultraviolet-visible absorption spectrum information.

Abstract: A method for producing copper particles includes a preparation step and a heating step. In the preparation step, a copper compound, a salt of a main group metal, and a polyhydric alcohol are prepared. In the heating step, a mixture of the copper compound, the salt of the main group metal, and the polyhydric alcohol is heated. Preferably, the main group metal is at least one selected from the group consisting of lithium, beryllium, sodium, magnesium, aluminum, potassium, calcium, zinc, gallium, germanium, rubidium, strontium, cadmium, indium, tin, antimony, cesium, and barium.

Abstract: An object of the present invention is to provide a method for producing a conductive material that allows a low electric resistance to be generated, and that is obtained by using an inexpensive and stable conductive material composition containing no adhesive. The conductive material can be provided by a producing method that includes the step of sintering a first conductive material composition that contains silver particles having an average particle diameter (median diameter) of 0.1 ?m to 15 ?m, and a metal oxide, so as to obtain a conductive material. The conductive material can be provided also by a method that includes the step of sintering a second conductive material composition that contains silver particles having an average particle diameter (median diameter) of 0.1 ?m to 15 ?m in an atmosphere of oxygen or ozone, or ambient atmosphere, at a temperature in a range of 150° C. to 320° C., so as to obtain a conductive material.

Abstract: An object of the present invention is to provide a method for producing a conductive material that allows a low electric resistance to be generated, and that is obtained by using an inexpensive and stable conductive material composition containing no adhesive. The conductive material can be provided by a producing method that includes the step of sintering a first conductive material composition that contains silver particles having an average particle diameter (median diameter) of 0.1 ?m to 15 ?m, and a metal oxide, so as to obtain a conductive material. The conductive material can be provided also by a method that includes the step of sintering a second conductive material composition that contains silver particles having an average particle diameter (median diameter) of 0.1 ?m to 15 ?m in an atmosphere of oxygen or ozone, or ambient atmosphere, at a temperature in a range of 150° C. to 320° C., so as to obtain a conductive material.

Abstract: A bonding structure (100) of the present invention includes a substrate (110), a metal film (120), a semiconductor element (130). The substrate (110), the metal film (120), and the semiconductor element (130) are laminated in order just mentioned. The metal film (120) contains a metal diffused through stress migration, and the substrate (110) and the semiconductor element (130) are bonded together with the metal film (120) therebetween.

Abstract: A silver particle synthesizing method includes reducing a dispersant from first silver particles each covered with the dispersant to obtain second silver particles. The method further includes synthesizing third silver particles each having a larger particle diameter than the second silver particles by causing a reaction between a silver compound and a reductant in a liquid phase containing the second silver particles.

Abstract: Disclosed are an insulating material (high-k layer) which includes a fiber assembly mainly composed of a cellulose nanofiber, and an electroconductive metal material supported by the fiber assembly; and a passive element (capacitor) which includes a high-k layer which is composed of the insulating material, and an electroconductive part stacked on the high-k layer.

Abstract: Provided are a metal nanowire production method capable of producing long and thin metal nanowires, and metal nanowires produced thereby. A metal nanowire production method comprising, a step for preparing a solution containing a metal salt, a polymer, at least one selected from a group consisting of halides, sulfides, carbonates, and sulfates, and an aliphatic alcohol, and a step for heating and reacting the solution at the temperature of 100° C. to 250° C. for 10 minutes or more while maintaining a practical shear stress applied to the solution at 10 mPa·m or less, wherein, during the heating and reacting step, ultraviolet-visible absorption spectrum change of the solution is measured, and a reaction time is controlled on the basis of the ultraviolet-visible absorption spectrum information.

Abstract: Provided is a transparent conductive ink which contains metal nanowires and/or metal nanotubes as a conductive component and can form a coating film which has good conductivity and a high light transmittance property, and also provided is a transparent conductive pattern forming method wherein this transparent conductive ink is used for forming a transparent conductive pattern by simple production steps, to thereby suppress the production cost and environmental load. At least one of metal nanowires and metal nanotubes are dispersed in a dispersion medium containing a shape-holding material which contains an organic compound having a molecular weight in the range of 150 to 500 and which has a viscosity of 1.0×103 to 2.0×106 mPa·s at 25° C., to prepare a transparent conductive ink.

Abstract: In a semiconductor device 100 according to the present invention in which a semiconductor member 120 is stacked on a substrate 110, the semiconductor member 120 and the substrate 110 are bonded together by means of a semiconductor device bonding material 130 of which main component is zinc. Further, a coating layer to prevent diffusion of the semiconductor device bonding material 130 is provided on at least one of the surface of the substrate 110 and the surface of the semiconductor member 120. In addition, the coating layer 140 is configured such that a barrier layer 141 composed of nitride, carbide, or carbonitride and a protective layer 142 composed of a noble metal are stacked. Further, the nitride, the carbide, or the carbonitride composing the barrier layer 141 is selected so as to have free energy smaller than that of a material composing an insulating layer 111 provided in the substrate 110.

Abstract: A composition for copper patterning and a method of copper patterning using the composition are provided, which composition is excellently safe in copper patterning, sintering at lower temperatures, and capable of forming a highly conducive copper pattern of a desired shape even on a plastic substrate. The composition contains Component A: a copper ?-ketocarboxylate compound of formula (1): (R1, R2: H or C1-C6 straight- or C3-C6 branched-hydrocarbon group, etc.); and based on 1 mol of this compound, Component B: an amine compound having a boiling point of not higher than 250° C. at 0.1 to 500 mol; and Component C-1: an organic acid having pKa of not more than 4 at 0.01 to 20 mol, and/or Component C-2: an organic copper compound composed of copper and an organic acid having pKa of not more than 4 at 0.01 to 100 mol. The composition is useful in the field of electronics.

Abstract: An object of the present invention is to provide a method for producing a conductive material that allows a low electric resistance to be generated, and that is obtained by using an inexpensive and stable conductive material composition containing no adhesive. The conductive material can be provided by a producing method that includes the step of sintering a first conductive material composition that contains silver particles having an average particle diameter (median diameter) of 0.1 ?m to 15 ?m, and a metal oxide, so as to obtain a conductive material. The conductive material can be provided also by a method that includes the step of sintering a second conductive material composition that contains silver particles having an average particle diameter (median diameter) of 0.1 ?m to 15 ?m in an atmosphere of oxygen or ozone, or ambient atmosphere, at a temperature in a range of 150° C. to 320° C., so as to obtain a conductive material.

Abstract: The object of the present invention is to provide a method for producing a conductive material that has a low electric resistivity and that is obtained using an inexpensive and stable conductive material composition. A conductive material having a low electric resistivity can be obtained by a method including the step of heating a conductive material composition that contains at least one of a full-cured or semi-cured thermosetting resin and a thermoplastic resin, as well as silver particles. Such a conductive material is a conductive material that includes fused silver particles, and thermosetting resin fine particles that have an average particle diameter of 0.1 ?m to 10 ?m both inclusive and are dispersed in the fused silver particles. Further, in such a conductive material is a conductive material that includes fused silver particles, and a thermoplastic resin welded among the fused silver particles.