Abstract: Provided are a transparent conductive substrate production method for an electrostatic capacitance touch panel having a high pattern recognition property, by simple steps without using a vacuum process and a wet etching method, as well as a transparent conductive substrate and an electrostatic capacitance touch panel. An electrode drawing lead wiring pattern is formed on at least one main face of a transparent film using a conductive paste. An electrode pattern forming unit prints an electrode pattern with a transparent conductive pattern forming ink containing metal nanowires or metal nanoparticles so that the electrode pattern is connected to the electrode drawing lead wiring pattern, and dries the printed electrode pattern. The dried electrode pattern is subjected to pulsed light irradiation by a photoirradiation unit 18, to sinter the metal nanowires or the metal nanoparticles contained in the transparent conductive pattern forming ink.

Abstract: An object of the present invention is to provide a method for producing a conductive material that allows a low electric resistance to be generated, and that is obtained by using an inexpensive and stable conductive material composition containing no adhesive. The conductive material can be provided by a producing method that includes the step of sintering a first conductive material composition that contains silver particles having an average particle diameter (median diameter) of 0.1 ?m to 15 ?m, and a metal oxide, so as to obtain a conductive material. The conductive material can be provided also by a method that includes the step of sintering a second conductive material composition that contains silver particles having an average particle diameter (median diameter) of 0.1 ?m to 15 ?m in an atmosphere of oxygen or ozone, or ambient atmosphere, at a temperature in a range of 150° C. to 320° C., so as to obtain a conductive material.

Abstract: Provided is a transparent conductive ink which contains metal nanowires and/or metal nanotubes as a conductive component and can form a coating film which has good conductivity and a high light transmittance property, and also provided is a transparent conductive pattern forming method wherein this transparent conductive ink is used for forming a transparent conductive pattern by simple production steps, to thereby suppress the production cost and environmental load. At least one of metal nanowires and metal nanotubes are dispersed in a dispersion medium containing a shape-holding material which contains an organic compound having a molecular weight in the range of 150 to 500 and which has a viscosity of 1.0×103 to 2.0×106 mPa·s at 25° C., to prepare a transparent conductive ink.

Abstract: A method for producing a transparent conductive pattern having an improved conductivity by pulse light irradiation. A transparent conductive pattern is produced by coating and drying a dispersion liquid having metal nanowires dispersed therein on a substrate, to deposit the metal nanowires, and irradiating pulsed light having a pulse width of 20 microseconds to 50 milliseconds to the metal nanowires deposited on the substrate, to thereby join intersections of the metal nanowires.

Abstract: Disclosed are an insulating material (high-k layer) which includes a fiber assembly mainly composed of a cellulose nanofiber, and an electroconductive metal material supported by the fiber assembly; and a passive element (capacitor) which includes a high-k layer which is composed of the insulating material, and an electroconductive part stacked on the high-k layer.

Abstract: A composition for copper patterning and a method of copper patterning using the composition are provided, which composition is excellently safe in copper patterning, sintering at lower temperatures, and capable of forming a highly conducive copper pattern of a desired shape even on a plastic substrate. The composition contains Component A: a copper ?-ketocarboxylate compound of formula (1): (R1, R2: H or C1-C6 straight- or C3-C6 branched-hydrocarbon group, etc.); and based on 1 mol of this compound, Component B: an amine compound having a boiling point of not higher than 250° C. at 0.1 to 500 mol; and Component C-1: an organic acid having pKa of not more than 4 at 0.01 to 20 mol, and/or Component C-2: an organic copper compound composed of copper and an organic acid having pKa of not more than 4 at 0.01 to 100 mol. The composition is useful in the field of electronics.

Abstract: A surface treatment method of cladding a Sn or Sn alloy coating with one or more metals selected from among Mn, Fe, Ru, Os, Co, Rh, Ir, Ni, Pd, Pt, Cu, Ag, Au, Zn, Cd, Ga, In, Ti, Ge, Pb, Sb and Bi continuously or discontinuously in such a way as to make the Sn or Sn alloy coating partially exposed, which method makes it possible to inhibit the generation of whiskers in an Sn or Sn alloy coating formed on the surface of a substrate to which other member is pressure-welded or the joint surface to be soldered. Cladding an Sn or Sn alloy coating with a prescribed metal continuously or discontinuously in such a way as to make the coating partially exposed inhibits the generation of whiskers by contact pressure in pressure welding, and further inhibits the generation of whiskers without impairing the solder wettability of the coating even when the cladding is not followed by heat treatment or reflowing.

Abstract: A solder joint which is used in power devices and the like and which can withstand a high current density without developing electromigration is formed of a Sn—Ag—Bi—In based alloy. The solder joint is formed of a solder alloy consisting essentially of 2-4 mass % of Ag, 2-4 mass % of Bi, 2-5 mass % of In, and a remainder of Sn. The solder alloy may further contain at least one of Ni, Co, and Fe.

Abstract: In a semiconductor device 100 according to the present invention in which a semiconductor member 120 is stacked on a substrate 110, the semiconductor member 120 and the substrate 110 are bonded together by means of a semiconductor device bonding material 130 of which main component is zinc. Further, a coating layer to prevent diffusion of the semiconductor device bonding material 130 is provided on at least one of the surface of the substrate 110 and the surface of the semiconductor member 120. In addition, the coating layer 140 is configured such that a barrier layer 141 composed of nitride, carbide, or carbonitride and a protective layer 142 composed of a noble metal are stacked. Further, the nitride, the carbide, or the carbonitride composing the barrier layer 141 is selected so as to have free energy smaller than that of a material composing an insulating layer 111 provided in the substrate 110.

Abstract: The object of the present invention is to provide a method for producing a conductive material that has a low electric resistivity and that is obtained using an inexpensive and stable conductive material composition. A conductive material having a low electric resistivity can be obtained by a method including the step of heating a conductive material composition that contains at least one of a full-cured or semi-cured thermosetting resin and a thermoplastic resin, as well as silver particles. Such a conductive material is a conductive material that includes fused silver particles, and thermosetting resin fine particles that have an average particle diameter of 0.1 ?m to 10 ?m both inclusive and are dispersed in the fused silver particles. Further, in such a conductive material is a conductive material that includes fused silver particles, and a thermoplastic resin welded among the fused silver particles.

Abstract: An object of the present invention is to provide a method for producing a conductive material that allows a low electric resistance to be generated, and that is obtained by using an inexpensive and stable conductive material composition containing no adhesive. The conductive material can be provided by a producing method that includes the step of sintering a first conductive material composition that contains silver particles having an average particle diameter (median diameter) of 0.1 ?m to 15 ?m, and a metal oxide, so as to obtain a conductive material. The conductive material can be provided also by a method that includes the step of sintering a second conductive material composition that contains silver particles having an average particle diameter (median diameter) of 0.1 ?m to 15 ?m in an atmosphere of oxygen or ozone, or ambient atmosphere, at a temperature in a range of 150° C. to 320° C., so as to obtain a conductive material.

Abstract: It is an object to provide a novel material that can quickly form metal silver even at a low temperature of approximately 210° C. or less. This serves as a metal silver forming material that includes a silver ?-ketocarboxylate. By heating this forming material, it is possible to form metal silver quickly even at a low temperature of approximately 210° C. or less. Examples of the silver ?-ketocarboxylate include silver isobutyrylacetate, silver benzoylacetate, silver acetoacetate, silver propionylacetate, silver ?-methylacetoacetate, and silver ?-ethylacetoacetate.

Abstract: A surface treatment method of cladding a Sn or Sn alloy coating with one or more metals selected from among Mn, Fe, Ru, Os, Co, Rh, Ir, Ni, Pd, Pt, Cu, Ag, Au, Zn, Cd, Ga, In, Ti, Ge, Pb, Sb and Bi continuously or discontinuously in such a way as to make the Sn or Sn alloy coating partially exposed, which method makes it possible to inhibit the generation of whiskers in an Sn or Sn alloy coating formed on the surface of a substrate to which other member is pressure-welded or the joint surface to be soldered. Cladding an Sn or Sn alloy coating with a prescribed metal continuously or discontinuously in such a way as to make the coating partially exposed inhibits the generation of whiskers by contact pressure in pressure welding, and further inhibits the generation of whiskers without impairing the solder wettability of the coating even when the cladding is not followed by heat treatment or reflowing.

Abstract: It is an object to provide a novel material that can quickly form metal silver even at a low temperature of approximately 210° C. or less. This serves as a metal silver forming material that includes a silver ?-ketocarboxylate. By heating this forming material, it is possible to form metal silver quickly even at a low temperature of approximately 210° C. or less. Examples of the silver ?-ketocarboxylate include silver isobutyrylacetate, silver benzoylacetate, silver acetoacetate, silver propionylacetate, silver ?-methylacetoacetate, and silver ?-ethylacetoacetate.

Abstract: A solder alloy is provided in which generation of an oxide film of Zn—Sn based or Zn—In based solder alloy, which can be easily oxidized, can be restrained without deteriorating the mechanical characteristics, and a soldering method that causes less joining defects is provided. Soldering is performed in an inert atmosphere or reductive atmosphere, using a solder alloy containing one or more of Sn and In at a maximum of 50% by weight and containing P at 0.0005% by weight or more and less than 0.001% by weight, with the remaining part made of Zn and unavoidable impurities.

Abstract: The present invention provides a conductive adhesive comprising conductive particles and a resin wherein 30% by weight or more of the conductive particles substantially comprise silver and tin, and a molar ratio of silver and tin in the metal components of the conductive adhesive is in the range of 77.5:22.5 to 0:100; and a circuit connected by using the conductive adhesive.

Abstract: A glass panel (P) including a pair of glass sheets (1A), (1B) disposed in a spaced relationship with each other with forming a gap (V) therebetween, characterized in that peripheral edges of the glass sheets (1A), (1B) are bonded directly by a single metal material (3) for sealing the gap (V) hermetically.

Abstract: Lead-free solder comprising Sn, Zn and 0.001 to 0.005 wt. % Ti. The lead-free solder does not contain toxic lead, and has sufficient bonding strength to oxide materials such as glass and ceramics.

Abstract: A lead-free solder alloy substantially contains Sn and Ti, and has a temperature of a liquidus line of not greater than 400° C. The lead-free solder alloy contains no toxic lead and has sufficient bonding strength to oxide materials such as glass and ceramics.

Abstract: An electronic circuit substrate including an aluminum-ceramic composite material having an electronic circuit formed on aluminum or an aluminum alloy plate of the aluminum-ceramic composite material which is prepared directly solidifying molten aluminum or an aluminum alloy on at least a portion of a ceramic substrate.