Abstract: A film-thickness measuring apparatus and a film-thickness measuring method capable of improving an accuracy of the film-thickness measurement are disclosed. The film-thickness measuring apparatus includes a substrate stage configured to support a substrate horizontally, a rinsing water supply structure configured to supply rinsing water onto an entire surface of the substrate on the substrate stage, a film-thickness measuring head configured to transmit light to a measurement area of the surface of the substrate on the substrate stage, produce a spectrum of reflected light from the measurement area, and determine a film thickness of the substrate from the spectrum, and a fluid supply structure configured to form a flow of a gas on a path of the light and supply the flow of the gas onto the measurement area.

Abstract: A polishing apparatus capable of achieving a highly-precise polishing result is disclosed. The polishing apparatus includes an in-line film-thickness measuring device configured to measure a film thickness of the substrate in a stationary state, and an in-situ spectral film-thickness monitor having a film thickness sensor disposed in a polishing table, the in-situ spectral film-thickness monitor being configured to subtract an initial film thickness, measured by the in-situ spectral film-thickness monitor before polishing of the substrate, from an initial film thickness, measured by the in-line film-thickness measuring device before polishing of the substrate, to determine a correction value, add the correction value to a film thickness that is measured when the substrate is being polished to obtain a monitoring film thickness, and monitor a progress of polishing of the substrate based on the monitoring film thickness.

Abstract: A polishing apparatus is used for polishing a substrate such as a semiconductor wafer to a flat mirror finish. The polishing apparatus includes a polishing table having a polishing surface, a substrate holding apparatus configured to hold the substrate and to press the substrate against the polishing surface, and a controller. The substrate holding apparatus includes an elastic membrane configured to form a substrate holding surface which is brought into contact with the substrate, a carrier provided above the elastic membrane, at least one pressure chamber formed between the elastic membrane and the carrier, and an infrared light detector configured to measure thermal energy from the elastic membrane. The controller calculates an estimate value of a temperature of the elastic membrane using a measured value of the infrared light detector.

Abstract: The method includes: calculating an increment of a sliding distance of a dresser by multiplying a relative speed between the dresser and a polishing member by a contact time between them; correcting the increment of the sliding distance by multiplying the calculated increment of the sliding distance by at least one correction coefficient; calculating the sliding distance by repeatedly adding the corrected increment of the sliding distance to the sliding distance according to elapse of time; and producing the sliding-distance distribution of the dresser from the obtained sliding distance and a position of a sliding-distance calculation point. The at least one correction coefficient includes an unevenness correction coefficient provided for the sliding-distance calculation point.

Abstract: An elastic member for use in a substrate holding apparatus includes an elastic member and a first reinforcing member. The first reinforcing member has a higher rigidity than the elastic membrane and reinforces substantially an entire area of the contact portion of the elastic membrane. The contact portion of the elastic member has a contact portion for contact with the substrate. The first peripheral wall portion of the elastic membrane is coupled to a peripheral end of the contact portion and extends upwardly. The second peripheral wall portion of the elastic member defines a first chamber on an outer side thereof and a second chamber on an inner side thereof. The first reinforcing member is embedded in substantially the entire area of the contact portion of the elastic membrane.

Abstract: The method includes the steps of measuring a surface height of a polishing member 10 at each of plural oscillation sections Z1 to Z5 which are defined in advance on the polishing member 10 along an oscillation direction of a dresser 5; calculating a difference between a current profile obtained from measured values of the surface height and a target profile of the polishing member 10; and correcting moving speeds of the dresser 5 in the plural oscillation sections Z1 to Z5 so as to eliminate the difference.

Abstract: A method of polishing a substrate having a film is provided. The method includes: performing polishing of the substrate in a polishing section; transporting the polished substrate to a wet-type film thickness measuring device prior to cleaning and drying of the substrate; measuring a thickness of the film by the wet-type film thickness measuring device; comparing the thickness with a predetermined target value; and if the thickness has not reached the predetermined target value, performing re-polishing of the substrate in the polishing section prior to cleaning and drying of the substrate.

Abstract: A method of polishing a substrate includes: performing a first polishing process of bringing the substrate into sliding contact with a polishing pad on a first polishing table to polish a metal film; performing a second polishing process of bringing the substrate into sliding contact with a polishing pad on a second polishing table to polish the metal film until a conductive film is exposed; performing a third polishing process of bringing the substrate into sliding contact with a polishing pad on a third polishing table to polish at least the conductive film; and performing a fourth polishing process of bringing the substrate into sliding contact with a polishing pad on a fourth polishing table to polish at least a dielectric film.

Abstract: An apparatus dresses a polishing pad. The apparatus includes a dresser drive shaft which is rotatable and vertically movable, a dresser flange coupled to the dresser drive shaft and configured to secure a dressing member thereto, a spherical bearing provided in the dresser flange and configured to allow the dressing member to tilt with respect to the dresser drive shaft, and a spring mechanism configured to generate a force against a tilting motion of the dressing member.

Abstract: A polishing apparatus includes: a table rotating motor configured to rotate the polishing table about its own axis; a top ring rotating motor configured to rotate the top ring about its own axis; a dresser configured to dress the polishing pad; a pad-height measuring device configured to measure a height of the polishing pad; and a diagnostic device configured to calculate an amount of wear of the polishing pad from the height of the polishing pad and to determine the end of a life of the polishing pad based on the amount of the wear of the polishing pad, the torque or current of the table rotating motor, and the torque or current of the top ring rotating motor.

Abstract: A polishing is used for polishing a substrate such as a semiconductor wafer to a flat mirror finish. The polishing apparatus includes a polishing table having a polishing surface, a substrate holding apparatus configured to hold the substrate and to press the substrate against the polishing surface, and a controller. The substrate holding apparatus includes an elastic membrane configured to form a substrate holding surface which is brought into contact with the substrate, a carrier provided above the elastic membrane, at least one pressure chamber formed between the elastic membrane and the carrier, and an infrared light detector configured to measure thermal energy from the elastic membrane. The controller calculates an estimate value of a temperature of the elastic membrane using a measured value of the infrared light detector.

Abstract: An apparatus for dressing a polishing pad is described. The apparatus includes a dresser drive shaft which is rotatable and vertically movable, a dresser flange coupled to the dresser drive shaft and configured to secure a dressing member thereto, a spherical bearing provided in the dresser flange and configured to allow the dressing member to tilt with respect to the dresser drive shaft, and a spring mechanism configured to generate a force against a tilting motion of the dressing member.

Abstract: A sample chamber and a column are connected to each other and comprise a magnetic substance. An exhaust section controls a pressure in the sample chamber and the column. A stage controller controls a stage, above which a sample is placed, in the sample chamber. An electron beam source power supply supplies power to an electron beam source, which emits an electron beam to the sample. A power supply supplies voltage to electron optic system, which controls the electron beam. The sample chamber, exhaust section, stage controller, electron beam source power supply and power supply are grounded by a first, second, third, fourth and fifth grounding point, respectively. The electron beam source and the electron optic system are electrically insulated from the sample chamber, column, exhaust section and stage. One of the first, second and third grounding point is different from the fourth or fifth grounding point.

Abstract: A substrate treatment apparatus is disclosed. The substrate treatment apparatus has an electrostatic chuck mechanism, a grounding mechanism, and an electron beam radiating mechanism. The electrostatic chuck mechanism electrostatically sucks and holds a substrate under treatment. The grounding mechanism freely contacts a predetermined film of a plurality of films formed on a treatment surface of the substrate under treatment sucked and held by the electrostatic chuck mechanism. The electron beam radiating mechanism radiates a resist film formed on the treatment surface side of the substrate under treatment with an electron beam.

Abstract: A substrate treatment apparatus is disclosed. The substrate treatment apparatus has an electrostatic chuck mechanism, a grounding mechanism, and an electron beam radiating mechanism. The electrostatic chuck mechanism electrostatically sucks and holds a substrate under treatment. The grounding mechanism freely contacts a predetermined film of a plurality of films formed on a treatment surface of the substrate under treatment sucked and held by the electrostatic chuck mechanism. The electron beam radiating mechanism radiates a resist film formed on the treatment surface side of the substrate under treatment with an electron beam.

Abstract: A substrate treatment apparatus is disclosed. The substrate treatment apparatus has an electrostatic chuck mechanism, a grounding mechanism, and an electron beam radiating mechanism. The electrostatic chuck mechanism electrostatically sucks and holds a substrate under treatment. The grounding mechanism freely contacts a predetermined film of a plurality of films formed on a treatment surface of the substrate under treatment sucked and held by the electrostatic chuck mechanism. The electron beam radiating mechanism radiates a resist film formed on the treatment surface side of the substrate under treatment with an electron beam.

Abstract: A substrate treatment apparatus is disclosed. The substrate treatment apparatus has an electrostatic chuck mechanism, a grounding mechanism, and an electron beam radiating mechanism. The electrostatic chuck mechanism electrostatically sucks and holds a substrate under treatment. The grounding mechanism freely contacts a predetermined film of a plurality of films formed on a treatment surface of the substrate under treatment sucked and held by the electrostatic chuck mechanism. The electron beam radiating mechanism radiates a resist film formed on the treatment surface side of the substrate under treatment with an electron beam.

Abstract: A sample chamber and a column are connected to each other and comprise a magnetic substance. An exhaust section controls a pressure in the sample chamber and the column. A stage controller controls a stage, above which a sample is placed, in the sample chamber. An electron beam source power supply supplies power to an electron beam source, which emits an electron beam to the sample. A power supply supplies voltage to electron optic system, which controls the electron beam. The sample chamber, exhaust section, stage controller, electron beam source power supply and power supply are grounded by a first, second, third, fourth and fifth grounding point, respectively. The electron beam source and the electron optic system are electrically insulated from the sample chamber, column, exhaust section and stage. One of the first, second and third grounding point is different from the fourth or fifth grounding point.