Abstract: Apparatuses and methods for controlling internal current are disclosed herein, An example apparatus includes a semiconductor device including a power node. The semiconductor device receives power as an internal current, and further operates in a first mode and a second mode. The semiconductor device consumes more power in the second mode than in the first mode. The semiconductor device consumes a first portion of the internal current and provides a second portion of the internal current as an external current at the power node during the first mode. The semiconductor device consumes a third portion of the internal current that is greater than the first portion of the internal current during the second mode.

Abstract: Apparatuses, systems, and methods for a system on chip (SoC) replacement mode. A memory device may be coupled to a SoC which may act as a controller of the memory. Commands and addresses may be sent along a command/address (CA) bus to a first decoder of the memory. The first decoder may use a first reference voltage to determine a value of signals along the CA bus. One of the pins of the CA bus may be coupled to a second decoder which may use a different second reference voltage. When the voltage on the pin exceeds the second reference voltage, the memory device may enter a SoC replacement mode, in which the memory may take various actions to preserve data integrity, while a new SoC comes online.

Abstract: Apparatuses, systems, and methods for a system on chip (SoC) replacement mode. A memory device may be coupled to a SoC which may act as a controller of the memory. Commands and addresses may be sent along a command/address (CA) bus to a first decoder of the memory. The first decoder may use a first reference voltage to determine a value of signals along the CA bus. One of the pins of the CA bus may be coupled to a second decoder which may use a different second reference voltage. When the voltage on the pin exceeds the second reference voltage, the memory device may enter a SoC replacement mode, in which the memory may take various actions to preserve data integrity, while a new SoC comes online.

Abstract: Apparatuses, systems, and methods for a system on chip (SoC) replacement mode. A memory device may be coupled to a SoC which may act as a controller of the memory. Commands and addresses may be sent along a command/address (CA) bus to a first decoder of the memory. The first decoder may use a first reference voltage to determine a value of signals along the CA bus. One of the pins of the CA bus may be coupled to a second decoder which may use a different second reference voltage. When the voltage on the pin exceeds the second reference voltage, the memory device may enter a SoC replacement mode, in which the memory may take various actions to preserve data integrity, while a new SoC comes online.

Abstract: Disclosed herein is an apparatus that includes first and second digit lines, a sense amplifier configured to amplify a potential difference between the first and second digit lines, a driver circuit configured to drive each of the first and second digit lines to different one of first and second logic levels from each other, a first transistor coupled between the driver circuit and the first digit line, a second transistor coupled between the driver circuit and the second digit line, and a control circuit configured to supply a first potential to control electrodes of the first and second transistors in response to a write command, and supply a second potential different from the first potential to the control electrodes of the first and second transistors in response to a read command.

Abstract: Drivers for read and write operations of memory arrays are described. In one aspect, a memory device can include an input/output (I/O) circuit to facilitate read and write operations with the memory device. One driver can generate clock signals for the command circuit to aid with the performance of the write operations. Another driver can generate clock signals for the I/O circuit to aid with the performance of the read operations.

Abstract: Apparatuses and methods for level shifting in a semiconductor device are described. An example apparatus includes: a splitter circuit that operates on a first voltage potential to produce a first signal having a first polarity and a second signal having a second polarity that is substantially opposite to the first polarity; an one-shot pulse circuit that operates on the first voltage potential to produce a first one-shot pulse signal responsive to the first signal and a second one-shot pulse signal responsive to the second signal; and a logic circuit configured to operate on a second voltage potential to produce a third signal responsive to the first and second one-shot pulse signals, the second voltage potential being different from the first voltage potential.

Abstract: Apparatuses and methods for providing clocks in a semiconductor device are disclosed. An example apparatus includes a clock generating circuit configured to generate an output clock signal based on one of rising and trailing edges of first, second, third and fourth clock signals in a first mode, phases of the first, second, third and fourth clock signals being shifted to each other. The clock generating circuit is further configured to generate the output clock signal based on both of rising and trailing edges of fifth and sixth clock signals in a second mode.

Abstract: Apparatuses and methods for providing voltages to conductive lines between which clock signal lines are disposed are disclosed. Voltages provided to the conductive lines may provide voltage conditions for clock signals on the clock signal lines that are relatively the same for at least some of the clock edges of the clock signals. Having the same voltage conditions may mitigate variations in timing/phase between the clock signals due to different voltage influences when a clock signal transitions from a low clock level to a high clock level.

Abstract: Apparatuses and methods for providing voltages to conductive lines between which clock signal lines are disposed are disclosed. Voltages provided to the conductive lines may provide voltage conditions for clock signals on the clock signal lines that are relatively the same for at least some of the clock edges of the clock signals. Having the same voltage conditions may mitigate variations in timing/phase between the clock signals due to different voltage influences when a clock signal transitions from a low clock level to a high clock level.

Abstract: Drivers for read and write operations of memory arrays are described. In one aspect, a memory device can include an input/output (I/O) circuit to facilitate read and write operations with the memory device. One driver can generate clock signals for the command circuit to aid with the performance of the write operations. Another driver can generate clock signals for the I/O circuit to aid with the performance of the read operations.

Abstract: Apparatuses and methods for providing clocks in a semiconductor device are disclosed. An example apparatus includes a clock generating circuit configured to generate an output clock signal based on one of rising and trailing edges of first, second, third and fourth clock signals in a first mode, phases of the first, second, third and fourth clock signals being shifted to each other. The clock generating circuit is further configured to generate the output clock signal based on both of rising and trailing edges of fifth and sixth clock signals in a second mode.

Abstract: Apparatuses and methods for providing voltages to conductive lines between which clock signal lines are disposed are disclosed. Voltages provided to the conductive lines may provide voltage conditions for clock signals on the clock signal lines that are relatively the same for at least some of the clock edges of the clock signals. Having the same voltage conditions may mitigate variations in timing/phase between the clock signals due to different voltage influences when a clock signal transitions from a low clock level to a high clock level.

Abstract: Apparatuses and methods for providing clocks in a semiconductor device are disclosed. An example apparatus includes a clock generating circuit configured to generate an output clock signal based on one of rising and trailing edges of first, second, third and fourth clock signals in a first mode, phases of the first, second, third and fourth clock signals being shifted to each other. The clock generating circuit is further configured to generate the output clock signal based on both of rising and trailing edges of fifth and sixth clock signals in a second mode.

Abstract: Apparatuses and methods for level shifting in a semiconductor device are described. An example apparatus includes: a splitter circuit that operates on a first voltage potential to produce a first signal having a first polarity and a second signal having a second polarity that is substantially opposite to the first polarity; an one-shot pulse circuit that operates on the first voltage potential to produce a first one-shot pulse signal responsive to the first signal and a second one-shot pulse signal responsive to the second signal; and a logic circuit configured to operate on a second voltage potential to produce a third signal responsive to the first and second one-shot pulse signals, the second voltage potential being different from the first voltage potential.

Abstract: Apparatuses and methods for correcting a duty cycle of a clock signal are described. An example apparatus includes: a duty cycle corrector (DCC) that receives an input clock signal and a control signal and produces an output clock signal responsive, at least in part, to the input clock signal and the control signal; a circuit that divides a frequency of the input clock signal by a positive even integer and generates an intermediate clock signal; and a phase detector that generates the control signal responsive, at least in part, to a difference in phase between the output clock signal and the intermediate clock signal.

Abstract: Disclosed is a non-transitory computer-readable recording medium having stored therein a message information generating program, which when processed by one or more processors, causes a computer to execute a process. The process includes acquiring first information having both a character string input by handwriting and a character color related to the character string input by the handwriting, specifying a form of the character string based on the acquired first information, specifying an address associated with the specified form by referring to a storage configured to store an address of a message destination in association with a form of a character string, and generating message information with the specified address as a destination, the message information including second information corresponding to the character string.

Abstract: Apparatuses and methods for level shifting in a semiconductor device are described. An example apparatus includes: a splitter circuit that operates on a first voltage potential to produce a first signal having a first polarity and a second signal having a second polarity that is substantially opposite to the first polarity; an one-shot pulse circuit that operates on the first voltage potential to produce a first one-shot pulse signal responsive to the first signal and a second one-shot pulse signal responsive to the second signal; and a logic circuit configured to operate on a second voltage potential to produce a third signal responsive to the first and second one-shot pulse signals, the second voltage potential being different from the first voltage potential.

Abstract: Apparatuses and methods for correcting a duty cycle of a clock signal are described. An example apparatus includes: a duty cycle corrector (DCC) that receives an input clock signal and a control signal and produces an output clock signal responsive, at least in part, to the input clock signal and the control signal; a circuit that divides a frequency of the input clock signal by a positive even integer and generates an intermediate clock signal, and a phase detector that generates the control signal responsive, at least in part, to a difference in phase between the output clock signal and the intermediate clock signal.

Abstract: Apparatuses and methods for level shifting in a semiconductor device are described. An example apparatus includes: a splitter circuit that operates on a first voltage potential to produce a first signal having a first polarity and a second signal having a second polarity that is substantially opposite to the first polarity; an one-shot pulse circuit that operates on the first voltage potential to produce a first one-shot pulse signal responsive to the first signal and a second one-shot pulse signal responsive to the second signal; and a logic circuit configured to operate on a second voltage potential to produce a third signal responsive to the first and second one-shot pulse signals, the second voltage potential being different from the first voltage potential.