Patents by Inventor Katsuhiro Kuroda
Katsuhiro Kuroda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11760885Abstract: An aluminum flake pigment is an aluminum flake pigment including aluminum flakes, wherein the aluminum flakes include small-size aluminum flakes each having a particle size of less than or equal to 1 ?m, and in a microscope image when the aluminum flakes are observed using a scanning electron microscope, a ratio of the number of the small-size aluminum flakes is less than or equal to 35% with respect to the number of a whole of the aluminum flakes.Type: GrantFiled: September 7, 2018Date of Patent: September 19, 2023Assignee: TOYO ALUMINIUM KABUSHIKI KAISHAInventors: Tetsuya Fudaba, Koji Yoshida, Katsuhiro Kuroda, Hiroki Tamaura
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Publication number: 20210189142Abstract: An aluminum flake pigment is an aluminum flake pigment including aluminum flakes, wherein the aluminum flakes include small-size aluminum flakes each having a particle size of less than or equal to 1 ?m, and in a microscope image when the aluminum flakes are observed using a scanning electron microscope, a ratio of the number of the small-size aluminum flakes is less than or equal to 35% with respect to the number of a whole of the aluminum flakes.Type: ApplicationFiled: September 7, 2018Publication date: June 24, 2021Applicant: TOYO ALUMINIUM KABUSHIKI KAISHAInventors: Tetsuya FUDABA, Koji YOSHIDA, Katsuhiro KURODA, Hiroki TAMAURA
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Publication number: 20170275497Abstract: A paint composition of the present invention contains an aluminum pigment and a mica pigment. The content of the aluminum pigment is equal to or higher than the content of the mica pigment. The aluminum pigment has a specific surface area, determined by the BET method, of not more than 55000 cm2/g, an average thickness of not less than 0.3 ?m, and an aspect ratio of not more than 50.Type: ApplicationFiled: April 17, 2015Publication date: September 28, 2017Applicant: TOYO ALUMINIUM KABUSHIKI KAISHAInventors: Katsuhiro KURODA, Akihiko IKEYA, Hiromitsu MINAMIOKA
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Patent number: 7952074Abstract: A circuit pattern inspection method and an apparatus therefore, in which the whole of a portion to be inspected of a sample to be inspected is made to be in a predetermined changed state, the portion to be inspected is irradiated with an image-forming high-density electron beam while scanning the electron beam, secondary charged particles are detected at a portion irradiated with the electron beam after a predetermined period of time from an instance when the electron beam is irradiated, an image is formed on the basis of the thus detected secondary charged particle signal, and the portion to be inspected is inspected by using the thus formed image.Type: GrantFiled: August 12, 2008Date of Patent: May 31, 2011Assignee: Hitachi, Ltd.Inventors: Hiroyuki Shinada, Mari Nozoe, Haruo Yoda, Kimiaki Ando, Katsuhiro Kuroda, Yutaka Kaneko, Maki Tanaka, Shunji Maeda, Hitoshi Kubota, Aritoshi Sugimoto, Katsuya Sugiyama, Atsuko Takafuji, Yusuke Yajima, Hiroshi Tooyama, Tadao Ino, Takashi Hiroi, Kazushi Yoshimura, Yasutsugu Usami
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Publication number: 20080302964Abstract: A circuit pattern inspection method and an apparatus therefor, in which the whole of a portion to be inspected of a sample to be inspected is made to be in a predetermined changed state, the portion to be inspected is irradiated with an image-forming high-density electron beam while scanning the electron beam, secondary charged particles are detected at a portion irradiated with the electron beam after a predetermined period of time from an instance when the electron beam is irradiated, an image is formed on the basis of the thus detected secondary charged particle signal, and the portion to be inspected is inspected by using the thus formed image.Type: ApplicationFiled: August 12, 2008Publication date: December 11, 2008Inventors: Hiroyuki Shinada, Mari Nozoe, Haruo Yoda, Kimiaki Ando, Katsuhiro Kuroda, Yutaka Kaneko, Maki Tanaka, Shunji Maeda, Hitoshi Kubota, Aritoshi Sugimoto, Katsuya Sugiyama, Atsuko Takafuji, Yusuke Yajima, Hiroshi Tooyama, Tadao Ino, Takashi Hiroi, Kazushi Yoshimura, Yasutsugu Usami
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Patent number: 7417444Abstract: A circuit pattern inspection method and an apparatus therefor, in which the whole of a portion to be inspected of a sample to be inspected is made to be in a predetermined charged state, the portion to be inspected is irradiated with an image-forming high-density electron beam while scanning the electron beam, secondary charged particles are detected at a portion irradiated with the electron beam after a predetermined period of time from an instance when the electron beam is irradiated, an image is formed on the basis of the thus detected secondary charged particle signal, and the portion to be inspected is inspected by using the thus formed image.Type: GrantFiled: November 9, 2005Date of Patent: August 26, 2008Assignee: Hitachi, Ltd.Inventors: Hiroyuki Shinada, Mari Nozoe, Haruo Yoda, Kimiaki Ando, Katsuhiro Kuroda, Yutaka Kaneko, Maki Tanaka, Shunji Maeda, Hitoshi Kubota, Aritoshi Sugimoto, Katsuya Sugiyama, Atsuko Takafuji, Yusuke Yajima, Hiroshi Tooyama, Tadao Ino, Takashi Hiroi, Kazushi Yoshimura, Yasutsugu Usami
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Patent number: 7299741Abstract: A hydraulic pressure actuator having an inner tube and a mesh sleeve covering the outer periphery of the inner tube and longitudinally extendable by pressure fluid fed into the inner tube, wherein a low friction body formed in an elastic cylindrical body by knitting fine fibers in a circumferential direction without a seam is disposed between the inner tube and the mesh sleeve, and the low friction body contributes to an increase in the life of the hydraulic pressure actuator repeatedly performing extension/retraction motions. The hydraulic pressure actuator is used as an actuator for driving a CPM device which supports the extremity of a human body by ay least one of a plurality of members combined with each other and performs the rehabilitation of the joints of a handicapped by operating the member.Type: GrantFiled: March 12, 2004Date of Patent: November 27, 2007Assignee: Hitachi Medical CorporationInventors: Kazuaki Hiramatsu, Makoto Konami, Yutaka Satoh, Taisuke Matsushita, Shigekazu Suzuki, Katsuhiro Kuroda, Kazuo Ooki, Akibiko Toda
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Patent number: 7242015Abstract: An electron beam (area beam) having a fixed area is irradiated onto the surface of a semiconductor sample, and reflected electrons from the sample surface are imaged by the imaging lens, and images of a plurality of regions of the surface of the semiconductor sample are obtained and stored in the image storage unit, and the stored images of the plurality of regions are compared with each other, and the existence of a defect in the regions and the defect position are measured. By doing this, in an apparatus for testing a pattern defect of the same design, foreign substances, and residuals on a wafer in the manufacturing process of a semiconductor apparatus by an electron beam, speeding-up of the test can be realized.Type: GrantFiled: September 26, 2005Date of Patent: July 10, 2007Assignee: Hitachi, Ltd.Inventors: Hiroyuki Shinada, Yusuke Yajima, Hisaya Murakoshi, Masaki Hasegawa, Mari Nozoe, Atsuko Takafuji, Katsuya Sugiyama, Katsuhiro Kuroda, Kaoru Umemura, Yasutsugu Usami
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Publication number: 20060249017Abstract: A hydraulic pressure actuator having an inner tube and a mesh sleeve covering the outer periphery of the inner tube and longitudinally extendable by pressure fluid fed into the inner tube, wherein a low friction body formed in an elastic cylindrical body by knitting fine fibers is disposed between the inner tube and the mesh sleeve, and the low friction body contributes to an increase in the life of the hydraulic pressure actuator repeatedly performing extension/retraction motions. The hydraulic pressure actuator is used as an actuator for driving a CPM device which supports the extremity of a human body by ay least one of a plurality of members combined with each other and performs the rehabilitation of the joints of a handicapped by operating the member.Type: ApplicationFiled: March 12, 2004Publication date: November 9, 2006Inventors: Kazuaki Hiramatsu, Makoto Konami, Yutaka Satoh, Taisuke Matsushita, Shigekazu Suzuki, Katsuhiro Kuroda, Kazuo Ooki, Akibiko Toda
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Patent number: 7026830Abstract: To make possible the in-line inspection of a pattern of an insulating material. A patterned wafer 40 formed with a pattern by a resist film is placed on a specimen table 21 of a patterned wafer inspection apparatus 1 in opposed relation to a SEM 3. An electron beam 10 of a large current is emitted from an electron gun 11 and the pattern of the patterned wafer is scanned only once at a high scanning rate. The secondary electrons generated by this scanning from the patterned wafer are detected by a secondary electron detector 16 thereby to acquire an electron beam image. Using this electron beam image, the comparative inspection is conducted on the patterned wafer through an arithmetic operation unit 32 and a defect determining unit 33. Since an electron beam image of high contrast can be obtained by scanning an electron beam only once, a patterned wafer inspection method using a SEM can be implemented in the IC fabrication method.Type: GrantFiled: March 6, 2003Date of Patent: April 11, 2006Assignee: Hitachi, Ltd.Inventors: Hiroyuki Shinada, Mari Nozoe, Haruo Yoda, Kimiaki Ando, Katsuhiro Kuroda, Yutaka Kaneko, Maki Tanaka, Shunji Maeda, Hitoshi Kubota, Aritoshi Sugimoto, Katsuya Sugiyama, Atsuko Takafuji, Yusuke Yajima, Hiroshi Tooyama, Tadao Ino, Takashi Hiroi, Kazushi Yoshimura, Yasutsugu Usami
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Publication number: 20060043982Abstract: A circuit pattern inspection method and an apparatus therefor, in which the whole of a portion to be inspected of a sample to be inspected is made to be in a predetermined charged state, the portion to be inspected is irradiated with an image-forming high-density electron beam while scanning the electron beam, secondary charged particles are detected at a portion irradiated with the electron beam after a predetermined period of time from an instance when the electron beam is irradiated, an image is formed on the basis of the thus detected secondary charged particle signal, and the portion to be inspected is inspected by using the thus formed image.Type: ApplicationFiled: November 9, 2005Publication date: March 2, 2006Inventors: Hiroyuki Shinada, Mari Nozoe, Haruo Yoda, Kimiaki Ando, Katsuhiro Kuroda, Yutaka Kaneko, Maki Tanaka, Shunji Maeda, Hitoshi Kubota, Aritoshi Sugimoto, Katsuya Sugiyama, Atsuko Takafuji, Yusuke Yajima, Hiroshi Tooyama, Tadao Ino, Takashi Hiroi, Kazushi Yoshimura, Yasutsugu Usami
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Publication number: 20060017014Abstract: An electron beam (area beam) having a fixed area is irradiated onto the surface of a semiconductor sample, and reflected electrons from the sample surface are imaged by the imaging lens, and images of a plurality of regions of the surface of the semiconductor sample are obtained and stored in the image storage unit, and the stored images of the plurality of regions are compared with each other, and the existence of a defect in the regions and the defect position are measured. By doing this, in an apparatus for testing a pattern defect of the same design, foreign substances, and residuals on a wafer in the manufacturing process of a semiconductor apparatus by an electron beam, speeding-up of the test can be realized.Type: ApplicationFiled: September 26, 2005Publication date: January 26, 2006Inventors: Hiroyuki Shinada, Yusuke Yajima, Hisaya Murakoshi, Masaki Hasegawa, Mari Nozoe, Atsuko Takafuji, Katsuya Sugiyama, Katsuhiro Kuroda, Kaoru Umemura, Yasutsugu Usami
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Patent number: 6979823Abstract: An electron beam (area beam) having a fixed area is irradiated onto the surface of a semiconductor sample, and reflected electrons from the sample surface are imaged by the imaging lens, and images of a plurality of regions of the surface of the semiconductor sample are obtained and stored in the image storage unit, and the stored images of the plurality of regions are compared with each other, and the existence of a defect in the regions and the defect position are measured. By doing this, in an apparatus for testing a pattern defect of the same design, foreign substances, and residuals on a wafer in the manufacturing process of a semiconductor apparatus by an electron beam, speeding-up of the test can be realized.Type: GrantFiled: June 14, 2004Date of Patent: December 27, 2005Assignee: Hitachi, Ltd.Inventors: Hiroyuki Shinada, Yusuke Yajima, Hisaya Murakoshi, Masaki Hasegawa, Mari Nozoe, Atsuko Takafuji, Katsuya Sugiyama, Katsuhiro Kuroda, Kaoru Umemura, Yasutsugu Usami
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Publication number: 20040222377Abstract: An electron beam (area beam) having a fixed area is irradiated onto the surface of a semiconductor sample, and reflected electrons from the sample surface are imaged by the imaging lens, and images of a plurality of regions of the surface of the semiconductor sample are obtained and stored in the image storage unit, and the stored images of the plurality of regions are compared with each other, and the existence of a defect in the regions and the defect position are measured. By doing this, in an apparatus for testing a pattern defect of the same design, foreign substances, and residuals on a wafer in the manufacturing process of a semiconductor apparatus by an electron beam, speeding-up of the test can be realized.Type: ApplicationFiled: June 14, 2004Publication date: November 11, 2004Applicant: Hitachi, Ltd.Inventors: Hiroyuki Shinada, Yusuke Yajima, Hisaya Murakoshi, Masaki Hasegawa, Mari Nozoe, Atsuko Takafuji, Katsuya Sugiyama, Katsuhiro Kuroda, Kaoru Umemura, Yasutsugu Usami
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Patent number: 6797954Abstract: An electron beam (area beam) having a fixed area is irradiated onto the surface of a semiconductor sample, and reflected electrons from the sample surface are imaged by the imaging lens, and images of a plurality of regions of the surface of the semiconductor sample are obtained and stored in the image storage unit, and the stored images of the plurality of regions are compared with each other, and the existence of a defect in the regions and the defect position are measured. By doing this, in an apparatus for testing a pattern defect of the same design, foreign substances, and residuals on a wafer in the manufacturing process of a semiconductor apparatus by an electron beam, speeding-up of the test can be realized.Type: GrantFiled: March 28, 2003Date of Patent: September 28, 2004Assignee: Hitachi, Ltd.Inventors: Hiroyuki Shinada, Yusuke Yajima, Hisaya Murakoshi, Masaki Hasegawa, Mari Nozoe, Atsuko Takafuji, Katsuya Sugiyama, Katsuhiro Kuroda, Kaoru Umemura, Yasutsugu Usami
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Publication number: 20030169060Abstract: A circuit pattern inspection method and an apparatus therefor, in which the whole of a portion to be inspected of a sample to be inspected is made to be in a predetermined charged state, the portion to be inspected is irradiated with an image-forming high-density electron beam while scanning the electron beam, secondary charged particles are detected at a portion irradiated with the electron beam after a predetermined period of time from an instance when the electron beam is radiated, an image is formed on the basis of the thus detected secondary charged particle signal, and the portion to be inspected is inspected by using the thus formed image.Type: ApplicationFiled: March 6, 2003Publication date: September 11, 2003Applicant: Hitachi, Ltd.Inventors: Hiroyuki Shinada, Mari Nozoe, Haruo Yoda, Kimiaki Ando, Katsuhiro Kuroda, Yutaka Kaneko, Maki Tanaka, Shunji Maeda, Hitoshi Kubota, Aritoshi Sugimoto, Katsuya Sugiyama, Atsuko Takafuji, Yusuke Yajima, Hiroshi Tooyama, Tadao Ino, Takashi Hiroi, Kazushi Yoshimura, Yasutsugu Usami
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Publication number: 20030164460Abstract: An electron beam (area beam) having a fixed area is irradiated onto the surface of a semiconductor sample, and reflected electrons from the sample surface are imaged by the imaging lens, and images of a plurality of regions of the surface of the semiconductor sample are obtained and stored in the image storage unit, and the stored images of the plurality of regions are compared with each other, and the existence of a defect in the regions and the defect position are measured. By doing this, in an apparatus for testing a pattern defect of the same design, foreign substances, and residuals on a wafer in the manufacturing process of a semiconductor apparatus by an electron beam, speeding-up of the test can be realized.Type: ApplicationFiled: March 28, 2003Publication date: September 4, 2003Applicant: Hitachi, Ltd.Inventors: Hiroyuki Shinada, Yusuke Yajima, Hisaya Murakoshi, Masaki Hasegawa, Mari Nozoe, Atsuko Takafuji, Katsuya Sugiyama, Katsuhiro Kuroda, Kaoru Umemura, Yasutsugu Usami
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Patent number: 6559663Abstract: A circuit pattern inspection method and an apparatus therefor, in which the whole of a portion to be inspected of a sample to be inspected is made to be in a predetermined charged state, the portion to be inspected is irradiated with an image-forming high-density electron beam while scanning the electron beam, secondary charged particles are detected at a portion irradiated with: the electron beam after a predetermined period of time from an instance when the electron beam is irradiated, an image is formed on the basis of the thus detected secondary charged particle signal, and the portion to be inspected is inspected by using the thus formed image.Type: GrantFiled: October 25, 2001Date of Patent: May 6, 2003Assignee: Hitachi, Ltd.Inventors: Hiroyuki Shinada, Mari Nozoe, Haruo Yoda, Kimiaki Ando, Katsuhiro Kuroda, Yutaka Kaneko, Maki Tanaka, Shunji Maeda, Hitoshi Kubota, Aritoshi Sugimoto, Katsuya Sugiyama, Atsuko Takafuji, Yusuke Yajima, Hiroshi Tooyama, Tadao Ino, Takashi Hiroi, Kazushi Yoshimura, Yasutsugu Usami
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Patent number: 6518548Abstract: So as to provide a substrate temperature control system capable of unifying the temperature of the substrate and capable of shortening the temperature elevation time (temperature lowering time), the substrate temperature control system is equipped with a temperature control plate (heating or cooling plate) having a plurality of projections on the surface and serving to set the temperature of the substrate, and a chuck mechanism to fix the substrate in contact to a plurality of the projections by chucking the substrate toward the direction of the temperature control plate.Type: GrantFiled: February 28, 2002Date of Patent: February 11, 2003Assignee: Hitachi, Ltd.Inventors: Masakazu Sugaya, Fumio Murai, Yutaka Kaneko, Masafumi Kanetomo, Shigeki Hirasawa, Tomoji Watanabe, Tatuharu Yamamoto, Katsuhiro Kuroda
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Patent number: 6511428Abstract: An ultrasound therapy apparatus delivers focused ultrasound for therapeutical purposes which can be correctly targeted to a target region, and also, a positional shift from the target region under irradiation of ultrasound can be effectively avoided. An ultrasound transducer is inside an applicator with an imaging ultrasonic probe. Another ultrasound transducer monitors a position of a target and a positional shift is inside a catheter which is inserted into a urethral tube. An imaging system drives the ultrasound probe to display an ultrasound tomographic image of a region in the vicinity of a target region. The ultrasound transducer is driven in a pulse-shaped mode at the same frequency as the imaging ultrasound and also at such timing when the imaging ultrasound is reached. As a result, a point-shaped sound source image is superimposed and displayed on an ultrasound tomographic image.Type: GrantFiled: April 26, 2001Date of Patent: January 28, 2003Assignees: Hitachi, Ltd., Hitachi Medical CorporationInventors: Takashi Azuma, Kenichi Kawabata, Shinichiro Umemura, Kazuaki Sasaki, Katsuhiro Kuroda, Ryuichi Shinomura, Yuichi Miwa, Kazunari Ishida, Jun Kubota