Abstract: An X-ray analyzing method includes the steps of applying an irradiated electron beam, converged by a condenser lens and an objective lens into a thin beam, to the inside of a fine hole existing on the surface of a sample; observing X-rays generated from a residual substance existing inside the fine hole; and performing a qualitative and quantitative analysis of the residual substance. The X-rays are observed by an X-ray detector installed in an internal space of the condenser lens, an internal space of the objective lens, or between the condenser lens and the objective lens, by detecting only the X-rays radiated within the angular range -.theta. to +.theta., where .theta. is an angle formed with a center axis of the electron beam, and so defined that tan .theta. is substantially equal to a/d, where a and d are the radius and the depth of the fine hole, respectively.

Abstract: An electron beam, which can transmit through part of a specimen and can reach a portion that is not exposed to the electron beam, is irradiated, and a scanning image is obtained on the basis of a signal secondarily generated from a portion irradiated with the electron beam. Dimension-measuring start and end points are set on the scanning image and a dimension therebetween is measured. A three-dimensional model is assumed, the three-dimensional model is modified so as to match the scanning image, and dimension measurement is carried out on the basis of a modified three-dimensional model.

Abstract: Disclosed is a microtron electron accelerator having an accelerating cavity accepting microwave electric power for generating a high-frequency accelerating electric field E disposed within a uniform magnetic field B and adapted such that electrons are accelerated and caused to move in a circular trajectory under action of the magnetic field B and the electric field E, comprising an electron source formed of a cathode and an anode, which has a minute slit allowing an electron beam extracted from the cathode to pass therethrough, disposed on the outer side of the wall of the accelerating cavity, a first electron beam through-hole and a second electron beam through-hole formed in the wall of the accelerating cavity in two positions, with the electron source therebetween, along the decreasing or increasing direction of the strength of the electric field E in the accelerating cavity, and a third electron beam through-hole formed in the wall of the accelerating cavity in a position in confrontation with the first e

Abstract: 3-dimensional observation on the atomic arrangement and atomic species in a thin-film specimen as well as conventional electron microscope observations is carried out at high speed and accuracy by an electron microscope which measures electrons emitted at high angle from the specimen. For that purpose, the present invention provides a scanning transmission electron microscope having an electron detection device comprising a scintillator converting electrons detected thereby to photons, a photoconductive-film converting photons from the scintillator detected thereby to c.a. 1000 times as many electron-hole pairs as these photons (i.d. avalanche multiplication), an electron gun emitting an electron beam toward the photoconductive-film to detect the holes generated therein, and electron deflector electrodes deflecting the electron beam on the photoconductive-film.

Abstract: This invention provides a compact X-ray CT system capable of obtaining an X-ray CT image having high resolution at a high speed by deflecting a predetermined electron beam and causing the finely focused electron beam to scan on an arcuate anode target inside the same plane as the arcuate anode target for an X-ray source. The anode target for an X-ray source and a detector are disposed in the form of arcs inside substantially the same plane so as to face each other. The electron beam emitted from an electron gun is guided to a deflector through a lens system, is then deflected to a arc form trajectory by a uniform magnetic field generated by the deflector and is guided to the anode target after a reverse magnetic field is applied to the electron beam at a desired position. This electron beam is caused to scan on the anode target at a high speed so as to move the generation position of the X-ray and thus to obtain a sectional image.

Abstract: A surface analysis method and an apparatus for carrying out the samein which the method involves the detection of fluorescence X-rays emitted from the surface of a sample in response to a finely focused electron beam irradiated thereto, whereby residues on the sample surface are analyzed qualitatively and quantitatively. An electron beam (1) is irradiated through a hole (9) at the center of an X-ray detector (8) into a fine hole (h) on the surface of a sample (2). In response, fluorescence X-rays are emitted from inside the fine hole (h) and are detected by an annular X-ray detector (8) having an energy analysis function near the axis of the electron beam (1) (preferably within 20 degrees with respect to the center axis of the electron beam). This arrangement allows the fluorescence X-rays from the fine hole (h) to reach the X-ray detector (8) without being absorbed by the substance of the material.

Abstract: 3-dimensional observation is carried out on the atomic arrangement and atomic species in a thin-film specimen at an atomic level in order to clarify the existence states of defects and impure atoms in the crystals. For that purposes, the present invention provides an instrument and a method for 3-dimensional observation of an atomic arrangement which are implemented by a system comprising a scanning transmission electron microscope equipped with a field emission electron gun operated at an acceleration voltage of greater than 200 kV, a specimen goniometer/tilting system having a control capability of the nanometer order, a multi-channel electron detector and a computer for executing software for controlling these components and 3-dimensional image-processing software. Point defects and impure atoms, which exist in joint interfaces and contacts in a ULSI device, can thereby be observed. As a result, the causes of bad devices such as current leak and poor voltage resistance can be analyzed at a high accuracy.

Abstract: A technique for displaying a scanned specimen image permits non-destructive observation of a surface structure having large or precipitous unevenness, an internal structure of a specimen or a specific structure of a defect or foreign matter, which non-destructive observation has hitherto been considered to be difficult to achieve. The technique can be applied to inspection and measurement so as to economically provide devices and parts of high quality and high reliability. Thus, secondary information such as secondary electrons resulting from interaction of primary information with a specimen, the primary information being generated as a result of interaction of a scanning electron beam with the specimen, is utilized as an image signal to form an image.

Abstract: Disclosed is a microtron electron accelerator having an accelerating cavity accepting microwave electric power for generating a high-frequency accelerating electric field E disposed within a uniform magnetic field B and adapted such that electrons are accelerated and caused to move in a circular trajectory under action of the magnetic field B and the electric field E, comprising an electron source formed of a cathode and an anode, which has a minute slit allowing an electron beam extracted from the cathode to pass therethrough, disposed on the outer side of the wall of the accelerating cavity, a first electron beam through-hole and a second electron beam through-hole formed in the wall of the accelerating cavity in two positions, with the electron source therebetween, along the decreasing or increasing direction of the strength of the electric field E in the accelerating cavity, and a third electron beam through-hole formed in the wall of the accelerating cavity in a position in confrontation with the first e

Abstract: 3-dimensional observation is carried out on the atomic arrangement and atomic species in a thin-film specimen at an atomic level in order to clarify the existence states of defects and impure atoms in the crystals. For that purposes, the present invention provides an instrument and a method for 3-dimensional observation of an atomic arrangement which are implemented by a system comprising a scanning transmission electron microscope equipped with a field emission electron gun operated at an acceleration voltage of greater than 200 kV, a specimen goniometer/tilting system having a control capability of the nanometer order, a multi-channel electron detector and a computer for executing software for controlling these components and 3-dimensional image-processing software. Point defects and impure atoms, which exist in joint interfaces and contacts in a ULSI device, can thereby be observed. As a result, the causes of bad devices such as current leak and poor voltage resistance can be analyzed at a high accuracy.

Abstract: In order to construct a radiotherapy apparatus which can irradiate a point in the body of a patient in an optional direction with high accuracy, an accelerated electron beam is controlled electrically by using deflectors so as to irradiate a plurality of radioactive ray generating positions, a collimator is provided so that a radioactive ray generated from the positions can irradiate one point of a portion of the patient's body to be treated, and a gantry can be rotated mechanically.

Abstract: A thick and thin film hybrid multilayer wiring substrate includes an adjustment layer provided between a thick film circuit and a thin film circuit in order to adjust positions of the thick film circuit and the thin film circuit with high integration and large area of the thick and thin film hybrid substrate. The adjustment layer is formed using a direct printing process in accordance with dispersion of the shape of the thick film circuit substrate to absorb the dispersion of the substrate. Further, in order to absorb dispersion of contraction of the thick film substrate due to sintering, a position of a mark provided on the substrate is detected by an electron beam and thereafter a connection pattern is formed to be connected to a regular pattern.

Abstract: Disclosed are a magnetic recording medium having a magnetic recording layer formed of a magnetic thin film in which rotational hysteresis integral R.sub.H is within a range of from 0.4 to 1.3 in the measurement by a torque magnetometer, and a continuous magnetic recording medium in which crystal grains are substantially randomly arranged on the upper surface of a magnetic recording layer or on the surface of a non-magnetic subbing layer, and in which each of the crystal grains is made to be in the form of an ellipsoid or needle and to have a length-ways axial ratio of a major axis to a minor axis not smaller than 2, more preferably, not smaller than 4.

Abstract: In a scanning electron microscope, voltage applied to the secondary electron detector for detection of secondary electrons released from a specimen bombarded with a primary electron beam is automatically changed in compliance with the change of acceleration voltage for the primary electron beam to ensure that even when the primary electron beam acceleration voltage changes over a wide range, intensity of a permeant electric field in the primary electron beam path which is created by the secondary electron attraction voltage applied to the secondary electron detector can always be controlled automatically such that deflection of the primary electron beam effected by the permeant field is negligible or almost zeroed. Even in the event that the primary electron beam acceleration voltage changes greatly, the primary electron beam will not undergo unwanted deflection due to the permeant field and degradation in resolution of secondary electron images can be prevented.

Abstract: The present invention relates to an apparatus for detecting the secondary electrons which are obtained from a sample (4) when the sample is irradiated with an electron beam (2). When this electron beam (2) is subjected to a low acceleration voltage, it is desirable to detect the secondary electrons efficiently without interfering with the deflection of the electron beam (2). In order to solve this subject matter, there is used a means (7) for generating an electric field and a magnetic field which are so perpendicular to each other that they apply deflecting forces in the direction common to the secondary electrons while applying no deflecting force to the electron beam as a whole.

Abstract: The apparatus for focus-deflecting a charged particle beam includes two electron lenses for focusing the charged particle beam and a single deflector for deflecting the charged particle beam to a desired position, wherein one of the electron lenses on the object point side and the deflector are arranged so that their magnetic fields overlap each other, and the aberration generated by them offsets that generated by the other of the electron lenses.

Abstract: An electron lens system wherein at least two coils are arranged in the vicinity of an electron-optical lens and are excited in directions opposite to each other, thereby making it possible to adjust the focal distance of the lens without including a rotation attributed to the electron-optical lens in an electron beam which passes through the lens.

Abstract: In a method for correcting deflection distortion which develops in an apparatus for delineating a pattern on a sample by scanning a charged particle beam thereover, the corrections of the deflection distortions are made in accordance with the height (deformation) of a portion-to-be-delineated on a sample (for example, a wafer) on the basis of correction magnitudes of the deflection distortions at respective reference levels of a mark as obtained by scanning the charged particle beam on the mark which has at least two reference levels having unequal heights in the direction of an optical axis.