Abstract: In a pattern inspection device of the present invention having at least three electron-optical systems, detection signals approximately simultaneously obtained from identical circuit patterns are compared with each other. Further, areas around plural electron sources can be maintained at high degrees of vacuum by evacuating an electron gun chamber mounted with plural electron guns independently of a sample chamber. Further, electric fields and magnetic fields are confined in each electron-optical system by a shield electrode which makes it possible to evacuate an electron beam path to a high degree of vacuum, and at the same time, secondary electrons and reflected electrons are detected in the same electron-optical system by setting the samples to a negative voltage and accelerating secondary electrons and reflected electrons toward the electron source side in the direction of the electron beam axis.

Abstract: An electron beam (area beam) having a fixed area is irradiated onto the surface of a semiconductor sample, and reflected electrons from the sample surface are imaged by the imaging lens, and images of a plurality of regions of the surface of the semiconductor sample are obtained and stored in the image storage unit, and the stored images of the plurality of regions are compared with each other, and the existence of a defect in the regions and the defect position are measured. By doing this, in an apparatus for testing a pattern defect of the same design, foreign substances, and residuals on a wafer in the manufacturing process of a semiconductor apparatus by an electron beam, speeding-up of the test can be realized.

Abstract: So as to provide a substrate temperature control system capable of unifying the temperature of the substrate and capable of shortening the temperature elevation time (temperature lowering time), the substrate temperature control system is equipped with a temperature control plate (heating or cooling plate) having a plurality of projections on the surface and serving to set the temperature of the substrate, and a chuck mechanism to fix the substrate in contact to a plurality of the projections by chucking the substrate toward the direction of the temperature control plate.

Abstract: To provide a substrate temperature control system capable of unifying the temperature of the substrate and capable of shortening the temperature elevation time (temperature lowering time), the substrate temperature control system is equipped with a temperature control plate (heating or cooling plate) having a plurality of projections on its surface and acting to set the temperature of the substrate. A chuck mechanism is provided to fix the substrate in contact with a plurality of the projections by chucking the substrate toward the temperature control plate.

Abstract: A circuit pattern inspection method and an apparatus therefor, in which the whole of a portion to be inspected of a sample to be inspected is made to be in a predetermined charged state, the portion to be inspected is irradiated with an image-forming high-density electron beam while scanning the electron beam, secondary charged particles are detected at a portion irradiated with the electron beam after a predetermined period of time from an instance when the electron beam is radiated, an image is formed on the basis of the thus detected secondary charged particle signal, and the portion to be inspected is inspected by using the thus formed image.

Abstract: A circuit pattern inspection method and an apparatus therefor, in which the whole of a portion to be inspected of a sample to be inspected is made to be in a predetermined charged state, the portion to be inspected is irradiated with an image-forming high-density electron beam while scanning the electron beam, secondary charged particles are detected at a portion irradiated with the electron beam after a predetermined period of time from an instance when the electron beam is irradiated, an image is formed on the basis of the thus detected secondary charged particle signal, and the portion to be inspected is inspected by using the thus formed image.

Abstract: A circuit pattern inspection method and an apparatus therefor, in which the whole of a portion to be inspected of a sample to be inspected is made to be in a predetermined charged state, the portion to be inspected is irradiated with an image-forming high-density electron beam while scanning the electron beam, secondary charged particles are detected at a portion irradiated with the electron beam after a predetermined period of time from an instance when the electron beam is irradiated, an image is formed on the basis of the thus detected secondary charged particle signal, and the portion to be inspected is inspected by using the thus formed image.

Abstract: An electron beam which can transmit through part of a specimen and can reach a portion not exposing to the electron beam is irradiated and a scanning image is obtained on the basis of a signal secondarily generated from a portion irradiated with the electron beam. Dimension-measuring start and end points are set on the scanning image and a dimension therebetween is measured. A cubic model is assumed, the cubic model is modified so as to match the scanning image, and dimension measurement is carried out on the basis of a modified cubic model.

Abstract: 3-dimensional observation on the atomic arrangement and atomic species in a thin-film specimen are carried out at high speed and accuracy by an electron microscope which measures electrons emitted at high angle from the specimen. A scanning transmission electron microscope has an electron detection device comprising a scintillator converting electrons detected thereby to photons, a photoconductive-film converting photons from the scintillator detected thereby to c.a. 1000 times as many electron-hole pairs as these photons.

Abstract: An electron beam which can transmit through part of a specimen and can reach a portion not exposing to the electron beam is irradiated and a scanning image is obtained on the basis of a signal secondarily generated from a portion irradiated with the electron beam. Dimension-measuring start and end points are set on the scanning image and a dimension therebetween is measured. A cubic model is assumed, the cubic model is modified so as to match the scanning image, and dimension measurement is carried out on the basis of a modified cubic model.

Abstract: An electron microscope for observing a magnetization state of a specimen with high resolution and an electron microscopic method. The electron microscope comprises an electron beam irradiating device including a scanning coil 3 and an objective lens 4 to irradiate an electron beam 2 emitted from an electron source 1 on a desired part of a specimen 51, and a circularly polarized light detector including a quarter wave plate 8, a polarizer 9 and a photodetector 11 to detect circularly polarized light generated from the electron beam irradiated part of the specimen 51.

Abstract: An X-ray analyzing method for inspecting opening states of fine holes comprises the steps of: irradiating a finely converged electron beam into a first fine hole, observing an X-ray emitted from the inside of said first fine hole in order to obtain an first X-ray analysis data about the residue substance existing at the bottom of said first fine hole; irradiating a finely converged electron beam into a second fine hole, observing an X-ray emitted from the inside of said second fine hole in order to obtain an second X-ray analysis data about the residue substance existing at the bottom of said second fine hole; and comparing said first X-ray analysis data with said second X-ray analysis data, forming a judgment as to whether or not a difference between said first and second analysis data is smaller than a predetermined threshold value and using an outcome of said judgment to determine the opening states of said first and second fine holes.

Abstract: An electron beam which can transmit through part of a specimen and can reach a portion not exposing to the electron beam is irradiated and a scanning image is obtained on the basis of a signal secondarily generated from a portion irradiated with the electron beam. Dimension-measuring start and end points are set on the scanning image and a dimension therebetween is measured. A cubic model is assumed, the cubic model is modified so as to match the scanning image, and dimension measurement is carried out on the basis of a modified cubic model.

Abstract: A scanning transmission electron microscope including an electron detection system having a scattering angle limiting aperture (for the inner angle) and a scattering angle limiting aperture (for the outer angle) between a specimen and an electron detector (comprising a scintillator and a light guide) and only one electron detector is installed.

Abstract: A cathode includes a hairpin type filament made of a refractory metal such as W, Mo or Re; a single crystal needle, made of a refractory metal such as W, Mo or Re joined to the filament; and a reservoir formed by applying a slurry of a powder of a metal or metal compound and an organic solvent containing nitrocellulose in the vicinity of a junction between the single crystal needle and the filament. The powder for a reservoir is made of a metal lower than the single crystal needle in a work function or electron affinity, such as Ti, Zr, Hf, Y, Th, Sc or Se, or a compound thereof.

Abstract: An electron beam source is provided with an electron forming means such as a doped layer of Si for forming conduction band electrons near the surface of the pointed tip of a needle-shaped structure while suppressing emission of electrons from a valence band. The surface of the pointed tip of the needle-shaped structure is formed with a single-crystal semiconductor or insulator. Preferably a surface passivation layer and/or a highly doped layer is formed on the surface of the needle-shaped structure. Also, means for exciting electrons in a valence band may be provided. An electron beam source apparatus and electron beam apparatus incorporating the electron beam source as defined above are also disclosed.

Abstract: A cathode (e.g., a Schottky emission cathode) having an electron emitter of a tungsten single-crystal with a sharp point, and a heater connected to the electron emitter to heat it. The work function of the crystal face of the point of the electron emitter is reduced by providing adsorbed thereon a nitride of Zr, Ti, Y, Nb, Sc, V or La, or an oxide of Y, Sc, V or La. The nitride or oxide can be formed as a reservoir on the heater (from where it thermally diffuses to the point), or chemically adsorbed on the point. For forming the nitride or oxide on the point, the metal forming the nitride or oxide can be provided on the point and reacted with nitrogen or oxygen thereat to form the nitride or oxide; to provide the metal on the point, the metal forming the nitride or oxide can either be evaporated onto the point, or can form a reservoir on the heater and thermally diffuse therefrom to the point.

Abstract: For enhancing an image, particularly a pixel image, the image is separated into brightness information and detailed information, the detailed information is enhanced, and then the enhanced detailed information is combined with the brightness information to produce an enhanced image. The entire process may be performed on a real time basis with the scanning, without artifact and any space transformation such as Fourier transform.

Abstract: A charged particle beam is transmitted through a specimen for producing an irregular pattern as a first image. Further, a magnetic field to be measured is arranged in space where a charged particle beam is passed between the specimen and an image plane thereby to produce a second image having an irregular pattern as in the foregoing case. The first image and the second image are processed to produce the deflection angle of the charged particle beam due to the magnetic field. This deflection angle is extracted from the entire positions of a cross section of the space where measurement is desired, thereby constructing projection data of a magnetic field by a charged particle beam. Furthermore, the magnetic field to be measured is rotated and the above-mentioned processing is performed from each direction to construct projection data. The projection data thus obtained and the computer tomography technique are used to determine a magnetic field at each point in space.

Abstract: A Schottky emission cathode has a filament, a needle-shaped piece of single crystal refractory metal which is attached to the filament and has a flat crystal surface at a tip thereof, and an adsorbed layer including at least one kind of a metal other than the single crystal refractory metal on the flat crystal surface. The piece of single crystal refractory metal is heated by passing a current through the filament and electrons are extracted by an electric field applied on a tip of the needle-shaped piece of single crystal refractory metal. The tip of the needle-shaped piece of single crystal refractory metal as a radius of curvature of a value to produce an energy width among electrons extracted from the tip not exceeding a predetermined value when the electric field is sufficient to prevent the flat crystal surface from collapsing during operation of the cathode.