Abstract: A display device includes a substrate, a display, a first wiring pad, a first recess, a second wiring pad, and a side conductor. The substrate includes a first surface, a side surface, and a second surface opposite to the first surface. The display is located on the first surface and includes a pixel unit. The first wiring pad is located on the first surface in an edge area and is electrically connected with the pixel unit. The first recess is located on a first outer surface of the first wiring pad. The second wiring pad is located on the second surface at a position corresponding to the first wiring pad in an edge area. The side conductor extends from the first surface to the second surface through the side surface and connects the first wiring pad with the second wiring pad.

Abstract: A micro-light-emitting diode mounting board includes a substrate having a mount surface receiving multiple micro-LEDs, and at least one pixel unit located on the mount surface and including the multiple micro-LEDs having different emission colors to operate as a basic element of display. The multiple micro-LEDs include vertical stacks of multiple first electrodes, multiple emissive layers, and multiple second electrodes. The at least one pixel unit includes a power electrode pad connected to each of the multiple second electrodes. The power electrode pad is spaced from each of the multiple first electrodes by a distance greater than an interelectrode distance between adjacent first electrodes of the multiple first electrodes.

Abstract: Providing a manufacturing method of a piezoelectric element which contains at least a substrate, a piezoelectric film and an electrode provided between the substrate and the piezoelectric film. The method includes providing an electrode on a substrate, and baking a piezoelectric film after forming the piezoelectric film on the electrode. The electrode includes a mixture layer having an electroconductive oxide and a metal mixed therein. The concentration of the electroconductive oxide in the substrate side of the mixture layer is higher than that in the piezoelectric film side of the mixture layer, and the concentration of the metal in the piezoelectric film side of the mixture layer is higher than that in the substrate side of the mixture layer.

Abstract: A perovskite type oxide of a single crystal structure or a uniaxial-oriented crystal structure is represented by ABO3. Site A includes Pb as a main component and site B includes a plurality of elements. The perovskite type oxide includes a plurality of crystal phases selected from the group consisting of tetragonal, rhombohedral, orthorhombic, cubic, pseudo-cubic and monoclinic systems and the plurality of crystal phases are oriented in the direction of <100>.

Abstract: The present invention provides a piezoelectric element and having a piezoelectric body and a pair of electrodes being contact with the piezoelectric body, wherein the piezoelectric body consists of an ABO3 perovskite oxide in which an A-site atom consists of Bi and a B-site atom is composed of an atom of at least two types of elements.

Abstract: A piezoelectric element includes a piezoelectric film disposed on a substrate and a pair of electrodes disposed in contact with the piezoelectric film and utilizing a bending mode. The piezoelectric film includes domains constituted of a tetragonal crystal and including an a-domain which is formed by a crystal having a (100) plane parallel to the film surface of the piezoelectric film, the a-domains include an A-domain having a normal axis of (001) plane substantially parallel to a principal bending direction of the piezoelectric film and a B-domain having a normal axis of (001) plane substantially perpendicular to the principal bending direction of the piezoelectric film, and the A-domains have a volume proportion larger than 50 vol % with respect to the sum of the volume of the A-domains and the volume of the B-domains.

Abstract: A main component of a piezoelectric substance is PZT which has a perovskite type structure expressed as Pb(ZrxTi1-x)O3, in which x expresses an element ratio Zr/(Zr+Ti) of Zr and Ti in the formula, an element ratio Pb/(Zr+Ti) of Pb, Zr and Ti of the piezoelectric substance is 1.05 or more, an element ratio Zr/(Zr+Ti) of Zr and Ti is 0.2 to 0.8 inclusive, and a Curie temperature Tc of the piezoelectric substance and a Curie temperature Tc0 in bulk at an element ratio of Zr and Ti of the piezoelectric substance satisfy a relation of Tc>Tc0+50° C.

Abstract: The piezoelectric actuator includes a piezoelectric film between two electrode layers and a diaphragm. Assuming that: each elastic coefficient of all materials is isotropic and a distortion amount of the piezoelectric film by an electric field is isotropic in all in-plane directions; a point located on a diaphragm surface and having a maximum displacement when a predetermined electric field is applied to distort the piezoelectric film, is expressed by P?MAX; and a point located on a circumference of a reference-circle having P?MAX as a center and having a minimum difference in displacement from P?MAX is expressed by P?A, the diaphragm has a shape capable of determining an axis A1 set in a straight-line joining P?MAX and P?A, the diaphragm comprises a single-crystalline-material in which a plane orthogonal to A1 and perpendicular to an axis A2 on the diaphragm surface, is a {110}-plane, and the piezoelectric film is a {100}-single-orientation film.

Abstract: A piezoelectric element comprises a piezoelectric body including a film made of an ABO3 perovskite oxide crystal epitaxially grown above a substrate, and a pair of electrode layers provided to the piezoelectric body, wherein the piezoelectric body has a porous region on a side opposite to a side of the substrate.

Abstract: An ink jet printing method and an ink jet printing apparatus are provided in an embodiment of the present invention using an intermediate transfer body. With each of the apparatus and the method, it is possible to form a high-quality image in an ink jet printing system. In the embodiment of the invention, color ink and an auxiliary liquid are supplied to ink-attracting portions each having a certain area, the ink-attracting portions being surrounded by an ink-repellent portion. Subsequently, ink dots are transferred to a printing medium, the ink dots being formed by the supplied ink and the supplied liquid. Here, the ink-attracting regions have an area in which a plurality of droplets of the ink and the liquid in total can be received.

Abstract: A piezoelectric element comprises a piezoelectric film disposed on a substrate and a pair of electrodes disposed in contact with the piezoelectric film and utilizing a bending mode. The piezoelectric film includes domains constituted of a tetragonal crystal and including an a-domain which is formed by a crystal having a (100) plane parallel to the film surface of the piezoelectric film, the a-domains include an A-domain having a normal axis of (001) plane substantially parallel to a principal bending direction of the piezoelectric film and a B-domain having a normal axis of (001) plane substantially perpendicular to the principal bending direction of the piezoelectric film, and the A-domains have a volume proportion larger than 50 vol % with respect to the sum of the volume of the A-domains and the volume of the B-domains.

Abstract: A method of manufacturing a piezoelectric body, formed from a film made of an ABO3 perovskite oxide crystal epitaxially grown on a substrate, includes forming a film containing an AOx crystal by using an oxide containing an A element and a B element by heating the substrate to a temperature which is equal to or higher than a temperature at which the AOx crystal is formed, and which is lower than a temperature at which the ABO3 perovskite oxide crystal is formed and changing the film containing the AOx crystal into a film made of the ABO3 perovskite oxide crystal by heating the substrate to a temperature which exceeds a temperature at which the AOx crystal can be present, and which is equal to or higher than a temperature at which the ABO3 perovskite oxide crystal is formed.

Abstract: A piezoelectric element comprises a piezoelectric film disposed on a substrate and a pair of electrodes disposed in contact with the piezoelectric film and utilizing a bending mode. The piezoelectric film includes domains constituted of a tetragonal crystal and including an a-domain which is formed by a crystal having a (100) plane parallel to the film surface of the piezoelectric film, the a-domains include an A-domain having a normal axis of (001) plane substantially parallel to a principal bending direction of the piezoelectric film and a B-domain having a normal axis of (001) plane substantially perpendicular to the principal bending direction of the piezoelectric film, and the A-domains have a volume proportion larger than 50 vol % with respect to the sum of the volume of the A-domains and the volume of the B-domains.

Abstract: Provided are a piezoelectric film, a piezoelectric film element, a liquid discharge head using the piezoelectric film element, and a liquid discharge apparatus. A piezoelectric film element that can be suitably used for a discharge pressure-generating element of a liquid discharge head is obtained by using an epitaxial oxide film composed of a perovskite composite oxide constituted according to a general formula ABO3 as a piezoelectric film. The epitaxial oxide film has at least an A domain and a B domain having a crystal orientation deviation with respect to each other. The crystal orientation deviation between the A domain and the B domain is less than 2°.

Abstract: Providing a manufacturing method of a piezoelectric element by which even if an electrode and a piezoelectric film stacked on a substrate are baked at a high temperature, the electrode does not oxidize and mutual diffusion between the substrate, the electrode and the piezoelectric film may be suppressed. The electrode is adapted as a laminated layer body which includes an electroconductive oxide layer, a mixture layer having an electroconductive oxide and electroconductive metal, and an electroconductive metal layer including the electroconductive metal from a substrate side, and the mixture layer above is adapted as a graded composition structure in which a ration of the electroconductive oxide is highest in an interface with the electroconductive oxide layer and lowest in an interface with the electroconductive metal layer.

Abstract: An optical element satisfactory in transparency and characteristics as an optical modulation element, and a piezoelectric substance element satisfactory in precision and reproducibility as a fine element such as MEMS can be provided. The piezoelectric substance element includes, on a substrate, at least a first electrode, a piezoelectric substance film and a second electrode. The piezoelectric substance film does not contain a layer-structured boundary plane; the crystal phase constituting the piezoelectric substance film comprises at least two of a tetragonal, a rhombohedral, a pseudocubic, an orthorhombic and a monoclinic; and the piezoelectric substance film includes, in a portion in which a change in the composition is within a range of ±2%, a portion where a proportion of the different crystal phases changes gradually in a thickness direction of the film.

Abstract: Providing a manufacturing method of a piezoelectric element by which even if an electrode and a piezoelectric film stacked on a substrate are baked at a high temperature, the electrode does not oxidize and mutual diffusion between the substrate, the electrode and the piezoelectric film may be suppressed. The electrode is adapted as a laminated layer body which includes an electroconductive oxide layer, a mixture layer having an electroconductive oxide and electroconductive metal, and an electroconductive metal layer including the electroconductive metal from a substrate side, and the mixture layer above is adapted as a graded composition structure in which a ration of the electroconductive oxide is highest in an interface with the electroconductive oxide layer and lowest in an interface with the electroconductive metal layer.

Abstract: There is disclosed a piezoelectric element having, on a substrate, a piezoelectric body and a pair of electrodes which come in contact with the piezoelectric body, wherein the piezoelectric body consists of a perovskite type oxide represented by the following formula (1): (Bi,Ba)(M,Ti)O3??(1) in which M is an atom of one element selected from the group consisting of Mn, Cr, Cu, Sc, In, Ga, Yb, Al, Mg, Zn, Co, Zr, Sn, Nb, Ta and W, or a combination of the atoms of the plurality of elements.

Abstract: A piezoelectric member of single crystal or uniaxial crystal and the piezoelectric member has a perovskite type oxide of a general formula ABO3 with a main component of the A being Pb and a main component of the B containing at least three kinds of elements selected from the group consisting of Mg, Zn, Sc, In, Yb, Ni, Nb, Ti, and Ta, and a film thickness of the piezoelectric member is not less than 1 ?m and not more than 10 ?m and the piezoelectric member fulfills a predetermined conditions on a relative dielectric constant or a Curie temperature.

Abstract: There is disclosed a piezoelectric element having, on a substrate, a piezoelectric body and a pair of electrodes which come in contact with the piezoelectric body, wherein the piezoelectric body consists of a perovskite type oxide represented by the following formula (1): (Bi,Ba)(M,Ti)O3??(1) in which M is an atom of one element selected from the group consisting of Mn, Cr, Cu, Sc, In, Ga, Yb, Al, Mg, Zn, Co, Zr, Sn, Nb, Ta and W, or a combination of the atoms of the plurality of elements.