Abstract: A piezoelectric substance has a multi-layer structure consisting of single crystal layers or uniaxial crystal layers of a perovskite oxide expressed by the general formula of ABO3 in which a main component at the site (A) is Pb, and a main component at the site (B) includes at least three elements selected from the group consisting of Mg, Zn, Sc, In, Yb, Ni, Nb, Ti and Ta. The multi-layer structure comprises a first crystal phase layer having any crystal structure selected from the group consisting of tetragonal, rhombohedral, pseudocubic, orthorhombic and monoclinic crystals; a second crystal phase layer having a different crystal structure from the crystal structure of the first crystal phase layer; and a boundary layer between the first crystal phase layer and the second crystal phase layer, and having a crystal structure gradually changing in a thickness direction of the layer.

Abstract: The present invention provides a piezoelectric substance of single crystal or uniaxial crystal type in which three lattice lengths a, b and c of a unit lattice of the piezoelectric substance are smaller than lattice length a0, b0 and c0 of a unit lattice of a bulk state of single crystal having the same temperature and same composition, respectively, and a volume of the unit lattice of the piezoelectric substance is smaller than a volume of the unit lattice of the bulk state of single crystal having the same temperature and same composition.

Abstract: There is disclosed a piezoelectric element having, on a substrate, a piezoelectric body and a pair of electrodes which come in contact with the piezoelectric body, wherein the piezoelectric body consists of a perovskite type oxide represented by the following formula (1): (Bi,Ba)(M,Ti)O3??(1) in which M is an atom of one element selected from the group consisting of Mn, Cr, Cu, Sc, In, Ga, Yb, Al, Mg, Zn, Co, Zr, Sn, Nb, Ta, and W, or a combination of the atoms of the plurality of elements.

Abstract: A piezoelectric material, characterized in that a main component of the piezoelectric substance is PZT, which has perovskite type structure expressed in Pb(ZrxTi1-x)O3 (x expresses an element ratio Zr/(Zr+Ti) of Zr and Ti in the formula), an element ratio Pb/(Zr+Ti) of Pb, Zr and Ti of the piezoelectric substance is 1.05 or more, and an element ratio Zr/(Zr+Ti) of Zr and Ti is 0.5 to 0.8 inclusive, and the piezoelectric substance has at least a perovskite type structure of monoclinic system.

Abstract: A piezoelectric element including an upper electrode, a piezoelectric and/or electrostrictive material and a lower electrode, characterized in that the piezoelectric and/or electrostrictive material is a composite oxide constituted by ABO3 as general formula and the piezoelectric and/or electrostrictive material has a twin crystal.

Abstract: The piezoelectric actuator includes a piezoelectric film between two electrode layers and a diaphragm. Assuming that: each elastic coefficient of all materials is isotropic and a distortion amount of the piezoelectric film by an electric field is isotropic in all in-plane directions; a point located on a diaphragm surface and having a maximum displacement when a predetermined electric field is applied to distort the piezoelectric film, is expressed by P?MAX; and a point located on a circumference of a reference-circle having P?MAX as a center and having a minimum difference in displacement from P?MAX is expressed by P?A, the diaphragm has a shape capable of determining an axis A1 set in a straight-line joining P?MAX and P?A, the diaphragm comprises a single-crystalline-material in which a plane orthogonal to A1 and perpendicular to an axis A2 on the diaphragm surface, is a {110}-plane, and the piezoelectric film is a {100}-single-orientation film.

Abstract: The present invention provides a piezoelectric element and having a piezoelectric body and a pair of electrodes being contact with the piezoelectric body, wherein the piezoelectric body consists of an ABO3 perovskite oxide in which an A-site atom consists of Bi and a B-site atom is composed of an atom of at least two types of elements.

Abstract: There is disclosed a piezoelectric element having, on a substrate, a piezoelectric body and a pair of electrodes which come in contact with the piezoelectric body, wherein the piezoelectric body consists of a perovskite type oxide represented by the following formula (1): (Bi,Ba)(M,Ti)O3 ??(1) in which M is an atom of one element selected from the group consisting of Mn, Cr, Cu, Sc, In, Ga, Yb, Al, Mg, Zn, Co, Zr, Sn, Nb, Ta, and W, or a combination of the atoms of the plurality of elements.

Abstract: A method of manufacturing a piezoelectric body, formed from a film made of an ABO3 perovskite oxide crystal epitaxially grown on a substrate, comprises forming a film containing an AOx crystal by using an oxide containing an A element and a B element by heating the substrate to a temperature which is equal to or higher than a temperature at which the AOx crystal is formed, and which is lower than a temperature at which the ABO3 perovskite oxide crystal is formed and changing the film containing the AOx crystal into a film made of the ABO3 perovskite oxide crystal by heating the substrate to a temperature which exceeds a temperature at which the AOx crystal can be present, and which is equal to or higher than a temperature at which the ABO3 perovskite oxide crystal is formed.

Abstract: A piezoelectric element comprises a piezoelectric body including a film made of an ABO3 perovskite oxide crystal epitaxially grown above a substrate, and a pair of electrode layers provided to the piezoelectric body, wherein the piezoelectric body has a porous region on a side opposite to a side of the substrate.

Abstract: A piezoelectric element comprises a piezoelectric film disposed on a substrate and a pair of electrodes disposed in contact with the piezoelectric film and utilizing a bending mode. The piezoelectric film includes domains constituted of a tetragonal crystal and including an a-domain which is formed by a crystal having a (100) plane parallel to the film surface of the piezoelectric film, the a-domains include an A-domain having a normal axis of (001) plane substantially parallel to a principal bending direction of the piezoelectric film and a B-domain having a normal axis of (001) plane substantially perpendicular to the principal bending direction of the piezoelectric film, and the A-domains have a volume proportion larger than 50 vol % with respect to the sum of the volume of the A-domains and the volume of the B-domains.

Abstract: Provided are a piezoelectric film, a piezoelectric film element, a liquid discharge head using the piezoelectric film element, and a liquid discharge apparatus. A piezoelectric film element that can be suitably used for a discharge pressure-generating element of a liquid discharge head is obtained by using an epitaxial oxide film composed of a perovskite composite oxide constituted according to a general formula ABO3 as a piezoelectric film. The epitaxial oxide film has at least an A domain and a B domain having a crystal orientation deviation with respect to each other. The crystal orientation deviation between the A domain and the B domain is less than 2°.

Abstract: A piezoelectric device includes a piezoelectric member and a pair of electrodes, and for piezoelectric constants d33 and d31 of the piezoelectric member, the following relational expression (I) is established: 0.1?|d33/d31|?1.8.

Abstract: A dielectric element having a dielectric layer provided between an upper electrode layer and a lower electrode layer, wherein the dielectric layer has a first dielectric layer and a second dielectric layer mutually different in composition, and composition of at least one component of the first dielectric layer changes as to a thickness direction of the first dielectric layer in proximity to a boundary between the first dielectric layer and the second dielectric layer.

Abstract: Providing a manufacturing method of a piezoelectric element by which even if an electrode and a piezoelectric film stacked on a substrate are baked at a high temperature, the electrode does not oxidize and mutual diffusion between the substrate, the electrode and the piezoelectric film may be suppressed. The electrode is adapted as a laminated layer body which includes an electroconductive oxide layer, a mixture layer having an electroconductive oxide and electroconductive metal, and an electroconductive metal layer including the electroconductive metal from a substrate side, and the mixture layer above is adapted as a graded composition structure in which a ration of the electroconductive oxide is highest in an interface with the electroconductive oxide layer and lowest in an interface with the electroconductive metal layer.

Abstract: The invention is to provide an optical element satisfactory in transparency and characteristics as an optical modulation element, and a piezoelectric substance element satisfactory in precision and reproducibility as a fine element such as MEMS. The piezoelectric substance element includes, on a substrate, at least a first electrode, a piezoelectric substance film and a second electrode; wherein the piezoelectric substance film does not contain a layer-structured boundary plane; the crystal phase constituting the piezoelectric substance film comprises at least two of a tetragonal, a rhombohedral, a pseudocubic, an orthorhombic and a monoclinic; and the piezoelectric substance film includes, in a portion in which a change in the composition is within a range of ±2%, a portion where a proportion of the different crystal phases changes gradually in a thickness direction of the film.

Abstract: To provide a dielectric layer of crystal structure preferentially or uniaxially oriented on a common substrate. A dielectric element of desired quality can be stably produced even on a common substrate for film-making by forming a lower electrode layer, dielectric layer and upper electrode layer in this order on a substrate, wherein each of these layers are designed to be preferentially or uniaxially oriented, and to have a specific half bandwidth, determined by fitting a pseudo-Voigt function.

Abstract: An ink jet printing method and an ink jet printing apparatus are provided in an embodiment of the present invention using an intermediate transfer body. With each of the apparatus and the method, it is possible to form a high-quality image in an ink jet printing system. In the embodiment of the invention, color ink and an auxiliary liquid are supplied to ink-attracting portions each having a certain area, the ink-attracting portions being surrounded by an ink-repellent portion. Subsequently, ink dots are transferred to a printing medium, the ink dots being formed by the supplied ink and the supplied liquid. Here, the ink-attracting regions have an area in which a plurality of droplets of the ink and the liquid in total can be received.

Abstract: A piezoelectric member element including a piezoelectric member layer and a pair of electrode layers sandwiching the piezoelectric member layer, wherein at least three layers, which are directed in a preferential orientation to the (110) plane on the (100) plane of Si, are accumulated and the above described at least three layers include the above described piezoelectric member layer and one of the above described pair of electrode layers.

Abstract: A piezoelectric substance has a multi-layer structure consisting of single crystal layers or uniaxial crystal layers of a perovskite oxide expressed by the general formula of ABO3 in which a main component at the site (A) is Pb, and a main component at the site (B) includes at least three elements selected from the group consisting of Mg, Zn, Sc, In, Yb, Ni, Nb, Ti and Ta, wherein the multi-layer structure comprises: a first layer crystal phase having any crystal structure selected from the group consisting of tetragonal, rhombohedral, pseudocubis, orthorhombic and monoclinic crystals; a second layer crystal phase having a different crystal structure from the crystal structure of the first crystal phase; and a boundary layer between the first crystal phase and the second crystal phase, and having a crystal structure gradually changing in a thickness direction of the layer.