Abstract: A light emitting device includes a substrate, and a laminated structure provided to the substrate, and including a columnar part, wherein the columnar part includes a first GaN layer having a first conductivity type, a second GaN layer having a second conductivity type different from the first conductivity type, and a light emitting layer disposed between the first GaN layer and the second GaN layer, the first GaN layer is disposed between the substrate and the light emitting layer, the light emitting layer has a first well layer as an InGaN layer, the first GaN layer has a c-face region, the first GaN layer has a crystal structure of a cubical crystal, and has a first layer constituting the c-face region, and a second layer as a GaN layer having a crystal structure of a hexagonal crystal is disposed between the first layer and the first well layer.

Abstract: A light emitting apparatus includes a laminated structure including a plurality of columnar section assemblies each formed of p columnar sections. The p columnar sections each include a light emitting layer. When viewed in the lamination direction of the laminated structure, the ratio of the maximum width to the minimum width of the light emitting layer in each of q first columnar sections out of the p columnar sections is greater than the ratio of the light emitting layer in each of r second columnar sections out of the p columnar sections. The light emitting layer in each of the p columnar sections does not have a rotationally symmetrical shape. The parameter p is an integer greater than or equal to 2. The parameter q is an integer greater than or equal to 1 but smaller than p. The parameter r is an integer that satisfies r=p?q.

Abstract: Ina light emitting device, a first diametrical size that is the largest size of a columnar part between a substrate side of a light emitting layer and an opposite side of the substrate, the columnar part has a size no larger than the first diametrical size in an area between the substrate side of the light emitting layer and the substrate side of a first semiconductor layer, the columnar part has a size smaller than the first diametrical size in the area between the substrate side of the light emitting layer and the substrate side of the first semiconductor layer, the columnar part has a size no larger than the first diametrical size in an area between the opposite side to the substrate of the light emitting layer, and an opposite side to the substrate of a second semiconductor layer, and the columnar part has a size smaller than the first diametrical size in the area between the opposite side to the substrate of the light emitting layer in the laminating direction, and the opposite side to the substrate of t

Abstract: A light emitting device includes a laminated structure having a plurality of columnar parts, wherein the columnar part includes a first semiconductor layer, a second semiconductor layer different in conductivity type from the first semiconductor layer, and a third semiconductor layer disposed between the first semiconductor layer and the second semiconductor layer, the third semiconductor layer includes a light emitting layer, and the second semiconductor layer includes a first portion, and a second portion which surrounds the first portion in a plan view from a laminating direction of the first semiconductor layer and the light emitting layer, and is lower in impurity concentration than the first portion.

Abstract: A light emitting device includes a substrate, and a stacked body provided to the substrate, and including a plurality of first columnar parts, wherein the stacked body includes a first semiconductor layer, a second semiconductor layer different in conductivity type from the first semiconductor layer, and a light emitting layer disposed between the first semiconductor layer and the second semiconductor layer, the first semiconductor layer and the light emitting layer constitute the first columnar parts, the first semiconductor layer is disposed between the substrate and the light emitting layer, the second semiconductor layer is provided with a plurality of recessed parts, the recessed part is provided with a low refractive-index part lower in refractive index than the second semiconductor layer, a plurality of the first columnar parts constitutes a first photonic crystal, the second semiconductor layer and the low refractive-index parts constitute a second photonic crystal, and the first photonic crystal and

Abstract: A light-emitting device includes: a substrate; a laminated structure provided at the substrate and having a plurality of columnar parts; and an electrode provided on a side opposite to a side of the substrate, of the laminated structure. The columnar part has: a first semiconductor layer; a second semiconductor layer having a different electrical conductivity type from the first semiconductor layer; and an active layer provided between the first semiconductor layer and the second semiconductor layer.

Abstract: The light emitting device includes a substrate, and a laminated structure provided to the substrate, and including a plurality of columnar parts, wherein the columnar part includes a first semiconductor layer, a second semiconductor layer different in conductivity type from the first semiconductor layer, and a light emitting layer disposed between the first semiconductor layer and the second semiconductor layer, the laminated structure includes a third semiconductor layer which is connected to an opposite side to the substrate of the second semiconductor layer, and is same in conductivity type as the second semiconductor layer, the second semiconductor layer is disposed between the light emitting layer and the third semiconductor layer, the third semiconductor layer is provided with a recessed part, an opening of the recessed part is provided to a surface at an opposite side to the substrate side of the third semiconductor layer, and a diametrical size in a bottom of the recessed part is smaller than a diamet

Abstract: A light-emitting device includes: a substrate; and a laminated structure provided at the substrate and having a plurality of columnar parts. The columnar part has: an n-type first semiconductor layer; a p-type second semiconductor layer; a light-emitting layer provided between the first semiconductor layer and the second semiconductor layer; and an electrode provided on a side opposite to a side of the substrate, of the laminated structure. The first semiconductor layer is provided between the light-emitting layer and the substrate. An end part on a side opposite to a side of the substrate, of the light-emitting layer, has a first facet surface. An end part on a side opposite to a side of the substrate, of the second semiconductor layer, has a second facet surface. A relation of ?2??1 is satisfied, where ?1 is a taper angle of the first facet surface, and ?2 is a taper angle of the second facet surface. ?1 is 70° or smaller, and ?2 is 30° or greater.

Abstract: A light emitting apparatus including a plurality of first light emitters and a plurality of second light emitters that differ from the first light emitters in terms of resonance wavelength, in which the second light emitters are each disposed between each adjacent pair of the first light emitters, first light that resonates in the plurality of first light emitters is in phase, and second light that resonates in the plurality of second light emitters is in phase.

Abstract: A light emitting device has a columnar portion including a light emitting layer, and: (b?a)/L1>(d?c)/L2; a<b; c<d; and a<d, where a is the columnar portion's maximum width as viewed in a laminating direction, at a first position of the columnar portion closest to the substrate in the laminating direction, b is the columnar portion's maximum width, at a second position of the light emitting layer closest to the substrate, c is the columnar portion's maximum width, at a third position of the light emitting layer farthest from the substrate, d is the columnar portion's maximum width, at a fourth position of the columnar portion farthest from the substrate, and L1 is a distance between the first and second positions and L2 is a distance between the third and fourth positions.

Abstract: There is provided a light emitting device including: a substrate; and a laminated structure provided on the substrate and having a plurality of columnar portion groups, in which the columnar portion group includes at least one first columnar portion, and a plurality of second columnar portions, the first columnar portion has a light emitting layer into which a current is injected to generate light, no current is injected into the second columnar portion, an optical confinement mode is formed in the plurality of columnar portion groups, the first columnar portion is disposed at a position that overlaps a peak of electric field intensity, and the second columnar portion is disposed at a position that does not overlap the peak of electric field intensity.

Abstract: There is provided a light emitting device including: a substrate; a laminated structure provided on the substrate and having a plurality of columnar portions, in which the columnar portion includes an n-type first semiconductor layer, a p-type second semiconductor layer, a light emitting layer provided between the first semiconductor layer and the second semiconductor layer, and a third semiconductor layer having a band gap larger than that of the light emitting layer, and the third semiconductor layer includes a first part provided between the light emitting layer and the second semiconductor layer, and a second part that is in contact with a side surface of the light emitting layer.

Abstract: There is provided a light emitting device including: a substrate; a laminated structure provided on the substrate and having a plurality of first columnar portions and a plurality of second columnar portions; and a first electrode and a second electrode, in which the first columnar portion includes a first semiconductor layer, a second semiconductor layer having a conductivity type different from the first semiconductor layer, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer, light generated in the light emitting layer propagates through the plurality of first columnar portions and the plurality of second columnar portions, a height of the second columnar portion is equal to or larger than a sum of a thickness of the first semiconductor layer and a thickness of the light emitting layer, and is lower than a height of the first columnar portion, the first semiconductor layer is provided between the substrate and the light emitting layer, the first elec

Abstract: In a light emitting device, a columnar part includes a first semiconductor layer, a second semiconductor layer different in conductivity type from the first semiconductor layer, and a light emitting layer disposed between the first semiconductor layer and the second semiconductor layer, the first semiconductor layer is disposed between the substrate and the light emitting layer, the light emitting layer includes a first layer, and a second layer larger in bandgap than the first layer, the first semiconductor layer has a facet plane, the first layer has a facet plane, the facet plane of the first semiconductor layer is provided with the first layer, and ?2>?1, in which ?1 is a tilt angle of the facet plane of the first semiconductor layer with respect to a surface of the substrate provided with the laminated structure, and ?2 is a tilt angle of the facet plane of the first layer provided to the facet plane of the first semiconductor layer with respect to the surface of the substrate.

Abstract: A light-emitting device includes: a substrate; a laminated structure provided at the substrate and having a plurality of columnar parts; and an electrode provided on a side opposite to a side of the substrate, of the laminated structure. The columnar part has: a first semiconductor layer; a second semiconductor layer having a different electrical conductivity type from the first semiconductor layer; and an active layer provided between the first semiconductor layer and the second semiconductor layer.

Abstract: A light emitting device includes a substrate, and a stacked body provided to the substrate, and including a columnar part aggregate constituted by p columnar parts, wherein the stacked body includes a plurality of the columnar part aggregates, the p columnar parts each have a light emitting layer, a diagram configured by respective centers of the plurality of columnar parts has rotation symmetry when viewed from a stacking direction of the stacked body, a diametrical size of q columnar parts out of the p columnar parts is different from a diametrical size of r columnar parts out of the p columnar parts, a shape of the columnar part aggregate is not rotation symmetry, the p is an integer not less than 2, the q is an integer not less than 1 and less than the p, and the r is an integer satisfying r=p?q.

Abstract: A light emitting device includes a substrate, and a laminate provided to the substrate and including a plurality of columnar portions, where each of the columnar portions includes a first semiconductor layer, a second semiconductor layer different in conductivity type from the first semiconductor layer, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer, the first semiconductor layer includes a facet surface, a c surface, and an m surface, the light emitting layer includes a facet surface region provided to the facet surface, and a c surface region provided to the c surface, the light emitting layer does not include a region provided to the m surface, and the c surface region is larger than the facet surface region in a plan view as viewed from a laminating direction of the laminate.

Abstract: A light-emitting device includes a substrate and a stack provided on the substrate. The stack includes a plurality of columnar portions each of which includes a first columnar portion and a second columnar portion which has a diameter smaller than a diameter of the first columnar portions. Each first columnar portion is provided between the substrate and the second columnar portions, and includes: a first semiconductor layer; a second semiconductor layer having a conductivity type different from a conductivity type of the first semiconductor layer; and a light-emitting layer provided between the first semiconductor layer and the second semiconductor layer and capable of generating light. The first semiconductor layer is provided between the substrate and the light-emitting layer. Each second columnar portion includes a third semiconductor layer having a conductivity type different from a conductivity type of the first semiconductor layer.

Abstract: A projector includes a laser light source, and a light modulating element that modulates light emitted from the laser light source in accordance with image information. The laser light source includes a substrate, and a photonic crystal structure that includes a light emitting layer that emits light, and causes the light emitted by the light emitting layer to be confined in an in-plane direction of the substrate and be emitted in a normal direction of the substrate.

Abstract: A light emitting device has a columnar portion including a light emitting layer, and: (b?a)/L1>(d?c)/L2; a<b; c<d; and a<d, where a is the columnar portion's maximum width as viewed in a laminating direction, at a first position of the columnar portion closest to the substrate in the laminating direction, b is the columnar portion's maximum width, at a second position of the light emitting layer closest to the substrate, c is the columnar portion's maximum width, at a third position of the light emitting layer farthest from the substrate, d is the columnar portion's maximum width, at a fourth position of the columnar portion farthest from the substrate, and L1 is a distance between the first and second positions and L2 is a distance between the third and fourth positions.