Abstract: Tanks of a first heat exchanger have plane sections perpendicular to bottoms having a plurality of tube insertion holes formed therein. Tanks of a second heat exchanger with circular cross sections have bottoms having a plurality of tube insertion holes formed therein. The axes of the tube insertion holes of the first and second heat exchangers are held in parallel with each other. The second heat exchanger is in contact with the plane sections of the first heat exchanger tank.

Abstract: A pin diode is formed by a p+ collector region, an n type buffer region, an n− region and an n+ cathode region. A trench is formed from the surface of n+ cathode region through n+ cathode region to reach n− region. An insulating film is formed along an inner wall surface of trench. A gate electrode layer is formed to oppose to the sidewall of n+ cathode region with insulating film interposed. A cathode electrode is formed to be electrically connected to n+ cathode region. An anode electrode is formed to be electrically connected to p+ collector region. The n+ cathode region is formed entirely over the surface between trenches extending parallel to each other. Thus, a power semiconductor device in which gate control circuit is simplified and which has good on property can be obtained.

Abstract: In a trenched MOS gate power device having a trenched MOS gate structure, a gate insulating film is formed on the walls of trenches to extend onto a major surface of a semiconductor substrate, and gates are formed so as to fill up the trenches and to extend onto the gate insulating film on the major surface of the semiconductor substrate. The gate insulating film is formed so that the thickness of a portion thereof formed on the major surface of the semiconductor substrate is greater than that of a portion thereof formed on the walls of the trenches to narrow portions of the gates corresponding to the tops of the trenches. Thus, the characteristics of a gate insulating film formed on the walls of trenches are improved.

Abstract: A pin diode is formed by a p+ collector region, an n type buffer region, an n− region and an n+ cathode region. A trench is formed from the surface of n+ cathode region through n+ cathode region to reach n− region. An insulating film is formed along an inner wall surface of trench. A gate electrode layer is formed to oppose to the sidewall of n+ cathode region with insulating film interposed. A cathode electrode is formed to be electrically connected to n+ cathode region. An anode electrode is formed to be electrically connected to p+ collector region. The n+ cathode region is formed entirely over the surface between trenches extending parallel to each other. Thus, a power semiconductor device in which gate control circuit is simplified and which has good on property can be obtained.

Abstract: There is disclosed a method of fabricating a semiconductor device which includes the steps of forming a trench (4), and repeating the formation and removal of an oxide film (a sacrificial oxide film) twice to provide a rounded configuration (5b) of an opening portion of the trench (4) and a rounded configuration (6b) of a bottom thereof and to draw defects in a semiconductor layer into a silicon oxide film (8), reducing the defects adjacent the inner wall of the trench (4), whereby electric field concentration on a gate is prevented and the mobility of carriers in channels is improved for an improvement in characteristic, particularly an on-state voltage, of a power device.

Abstract: In a semiconductor device with a high breakdown voltage, insulating layers are buried at regions in n− silicon substrate located between gate trenches which are arranged with a predetermined pitch. This structure increases a carrier density at a portion near an emitter, and improves characteristic of an IGBT of a gate trench type having a high breakdown voltage.

Abstract: A connecting structure for connecting a radiator having a reinforcement member and a condenser having a bracket is provided. The structure includes a connecting member having a spacer portion and a holding portion integrally formed on opposite sides of a notch. The spacer portion is fittingly inserted into the reinforcement member, and a folded portion of the reinforcement member and the condenser bracket are inserted into the notch. A bolt is inserted through the reinforcement member, the spacer portion, the bracket and the holding portion and a nut is screwed onto a tip of the bolt for clamping the radiator and the condenser together.

Abstract: An integrated heat exchanger includes a radiator having a core formed between a pair of radiator tanks, a condenser adjoining the radiator and having the core formed between a pair of condenser tanks, and a corrugated fin provided in the core and shared between the radiator and the condenser, the heat exchanger containing first partitions which divide the inside of the pair of condenser tanks to thereby create fluid chambers on one side of the respective condenser tanks in such a way as to become opposite to each other; and a fluid inflow pipe and a fluid outflow pipe connected to the fluid chamber of the condenser tanks.

Abstract: A cylindrical tank body is formed by folding a plate material which has a brazing filler metal layer and is formed from aluminum clad. One end of the plate material is extended along the other end of the tank body, and the thus-extended portion is brazed to the end.

Abstract: A method of fabricating a semiconductor device which includes the steps of forming a trench (4), and repeating the formation and removal of an oxide film (a sacrificial oxide film) twice to provide a rounded configuration (5b) of an opening portion of the trench (4) and a rounded configuration (6b) of a bottom thereof and to draw defects in a semiconductor layer into a silicon oxide film (8), reducing the defects adjacent the inner wall of the trench (4), whereby electric field concentration on a gate is prevented and the mobility of carriers in channels is improved for an improvement in characteristic, particularly an on-state voltage, of a power device.

Abstract: In a semiconductor device with a high breakdown voltage, insulating layers are buried at regions in n.sup.- silicon substrate located between gate trenches which are arranged with a predetermined pitch. This structure increases a carrier density at a portion near an emitter, and improves characteristic of an IGBT of a gate trench type having a high breakdown voltage.

Abstract: Tanks of a first heat exchanger have plane sections perpendicular to bottoms having a plurality of tube insertion holes formed therein. Tanks of a second heat exchanger with circular cross sections have bottoms having a plurality of tube insertion holes formed therein. The axes of the tube insertion holes of the first and second heat exchangers are held in parallel with each other. The second heat exchanger is in contact with the plane sections of the first heat exchanger tank.

Abstract: An oil cooler mounting structure includes: a heat exchanger tank main body that is made of aluminum and has an oil cooler mounting hole in a wall surface thereof; an oil cooler that is made of aluminum, has an insertion hole for an oil introducing/discharging pipe formed in a seat portion, and is mounted inside the heat exchanger tank with a plurality of projecting pieces erected around the circumference of the insertion hole; a patch that is made of an aluminum-containing brazing filler metal and is arranged on the outer circumference of the projecting pieces of the oil cooler; and the oil introducing/discharging pipe that is inserted into the insertion hole formed in the seat portion of the oil cooler.

Abstract: A pin diode is formed by a p.sup.+ collector region, an n type buffer region, an n.sup.- region and an n.sup.+ cathode region. A trench is formed from the surface of n.sup.+ cathode region through n.sup.+ cathode region to reach n.sup.- region. An insulating film is formed along an inner wall surface of trench. A gate electrode layer is formed to oppose to the sidewall of n.sup.+ cathode region with insulating film interposed. A cathode electrode is formed to be electrically connected to n.sup.+ cathode region. An anode electrode is formed to be electrically connected to p.sup.+ collector region. The n.sup.+ cathode region is formed entirely over the surface between trenches extending parallel to each other. Thus, a power semiconductor device in which gate control circuit is simplified and which has good on property can be obtained.

Abstract: An oil cooler mounting structure includes: a heat exchanger tank main body that is made of aluminum and has an oil cooler mounting hole in a wall surface thereof; an oil cooler that is made of aluminum, has an insertion hole for an oil introducing/discharging pipe formed in a seat portion, and is mounted inside the heat exchanger tank with a plurality of projecting pieces erected around the circumference of the insertion hole; a patch that is made of an aluminum-containing brazing filler metal and is arranged on the outer circumference of the projecting pieces of the oil cooler; and the oil introducing/discharging pipe that is inserted into the insertion hole formed in the seat portion of the oil cooler.

Abstract: In a semiconductor device with a high breakdown voltage, insulating layers are buried at regions in n.sup.31 silicon substrate located between gate trenches which are arranged with a predetermined pitch. This structure increases a carrier density at a portion near an emitter, and improves characteristic of an IGBT of a gate trench type having a high breakdown voltage.

Abstract: A structure for attaching a fan shroud so as to cover a core formed between a pair of tanks which are spaced a given distance away from and opposite to each other, the structure including a guide groove formed integrally in a tank body belonging to each of the pair of tanks; and guides which are formed on both sides of the fan shroud facing the pair of tanks, respectively.

Abstract: A method of fabricating a semiconductor device which includes the steps of forming a trench (4), and repeating the formation and removal of an oxide film (a sacrificial oxide film) twice to provide a rounded configuration (5b) of an opening portion of the trench (4) and a rounded configuration (6b) of a bottom thereof and to draw defects in a semiconductor layer into a silicon oxide film (8), reducing the defects adjacent the inner wall of the trench (4), whereby electric field concentration on a gate is prevented and the mobility of carriers in channels is improved for an improvement in characteristic, particularly an on-state voltage, of a power device.

Abstract: A cyanoacetic acid higher ester represented by the general formula: NCCH.sub.2 COOR', wherein R' represents an alkyl group having 4 to 20 carbon atoms, is prepared by subjecting a cyanoacetic acid ester represented by the general formula: NCCH.sub.2 COOR.sup.1, wherein R.sup.1 represents an alkyl group having 1 to 3 carbon atom, to a transesterification with an alcohol represented by the general formula: R'OH, wherein R' represents an alkyl group having 4 to 20 carbon atoms, in the presence of a specific tin compound as the catalyst. According to the present invention, the cyanoacetic acid higher esters which are useful as intermediates for pharmaceuticals and agricultural chemicals as well as intermediates for industrial products can be prepared easily and in higher yield as compared with conventional methods, by using a cyanoacetic acid ester and an alcohol which are less expensive and easily available as raw materials.

Abstract: A diffused resistor capable of suppressing variation of characteristics caused by leakage of current occurring under high-temperature conditions. An N-type layer is epitaxially grown on a P-type substrate, and an N-type resistor island isolated by a P-type isolation region is formed. A P-type diffused resistor is formed in the island. An N-type region of high impurity concentration is disposed in close proximity to the high-potential end of the P-type diffused resistor. An electrode is brought into contact with not only the high-potential end but also the N-type high-impurity concentration region through the same contact hole. Thus, a parasitic transistor, which is formed from the P-type diffused resistor, the N-type resistor island and the P-type substrate (P-type isolation region), can be prevented from turning on with a minimal increase of the element area.