Abstract: By forming a flat member 10 forming a conductive film 11 having substantially same pattern with a second bonding pad 17, a wiring 18, and an electrode 19 for taking out, or forming a flat member 30 half-etched through the conductive film 11, it is possible to manufacture a semiconductor device 23 of BGA structure using a back process of a semiconductor maker.

Abstract: After a trench 14 has been formed in a conductive foil 60, a circuit element is mounted on the conductive foil 60. The surface of the structure is covered with insulating resin 10 using the conductive foil 60 as a supporting board. After the structure has been turned upside down, this time, the conductive foil is polished using the insulating resin 10 as a supporting board so that it is separated into conductive paths 11. Therefore, a semiconductor device 13 in which the conductive paths 11 and the semiconductor chip 12 are supported by the insulating resin 10 can be realized with no supporting board. In addition, since the semiconductor chip 12 is thermally coupled with a conductive path 11A, heat generated in the semiconductor chip 12 can be radiated externally.

Abstract: A resistive body of a hybrid integrated circuit has a resistance pattern on a resin film. Bonding pads permit connection of current through the resistance pattern. The resistance pattern may form part of a detecting bridge for overcurrent detection. One embodiment of the invention uses a rectangular resistance pattern with an opening in the center to force current to flow on a perimeter path for minimizing maximum temperature. Another embodiment uses a serpentine resistance pattern. A face-down resistance patter reduces interference. A direct-connection bonding pad reduces the voltage generated in a parasitic capacitance to improve the resistance of the resin film to voltage breakdown.