Abstract: As means for solving a problem of a positional shift of a land and a hole which is caused by an alignment in the formation of an etching resist layer and a plated resist layer in a method of manufacturing a circuit board, there are provided a method of manufacturing a circuit board including the steps of forming a first resin layer on a surface of an insulating substrate having a conductive layer on the surface and an internal wall of a through hole or/and a non-through hole, forming a second resin layer which is insoluble or slightly soluble in a developing solution for the first resin layer on the first resin layer provided on the surface conductive layer, and removing the first resin layer provided over the hole with the developing solution for the first resin layer, and a method of manufacturing a circuit board including the step of uniformly charging a surface of the first resin layer to induce a potential difference to the first resin layer provided over the hole and the first resin layer provided on th

Abstract: A method of forming a high aspect ratio metal plate pattern or circuit board by multi-stage etching with a metal mask is disclosed. A resist (12) is coated on one or two surfaces of a copper plate (10) and patterned into a resist pattern. A tin plating layer (14) is formed using this resist pattern, and with this tin plating layer as a mask, the copper plate is half etched. By coating, exposing and developing the positive resist (18), the positive resist under the tin plating layer is protected. With the tin plating layer and the protective resist layer as a mask, the half etching is executed again. This process is repeated until the resist and the tin plating layer used as a masking are finally removed to produce a metal pattern (20).

Abstract: A method of forming a high aspect ratio metal plate pattern and a circuit board by multi-stage etching with a metal mask is disclosed. A resist (12) is coated on one of two surfaces of a copper plate (10) and patterned to form a resist pattern. A tin plating layer (14) is formed using this resist pattern, and with this tin plating layer as a mask, the copper plate is selectively half etched. By coating, exposing and developing the positive resist (18), the side etched portion under the tin plating layer is protected by the positive resist. With the tin plating layer and the protective resist layer as a mask, the half etching is executed again. This process is repeated until the resist and the tin plating layer used as a mask are finally removed to produce a metal pattern (20).

Abstract: An interposer to be interposed between a semiconductor chip to be mounted thereon and a packaging board has an interposer portion made of a semiconductor and an interposer portion provided around the foregoing interposer portion integrally therewith. On both surfaces of the interposer portions, wiring patterns are formed via insulating layers. The wiring patterns are electrically connected via through holes formed at required positions in the interposer portions. The outer interposer portion is made of an insulator or a metal body. Further, external connection terminals are bonded to one surface of the interposer.

Abstract: A process for making a circuit board comprises the following steps of: half-etching a metal layer formed on an insulating substrate by means of a first masking which is positioned on an upper surface of the metal layer; applying a positive liquid resist on the half-etched metal layer from an upper side of the first masking; exposing the positive liquid resist with parallel light from the upper side of the first masking and developing the positive liquid resist in such a manner that a part of the positive liquid resist located under the first masking is protected to be unexposed and undeveloped; etching again the metal layer by means of a second masking composed of the first masking and the protected positive liquid resist to form a conductive pattern on the insulating substrate; and removing the first masking and the second masking from the metal layer.

Abstract: An interposer to be interposed between a semiconductor chip to be mounted thereon and a packaging board has an interposer portion made of a semiconductor and an interposer portion provided around the foregoing interposer portion integrally therewith. On both surfaces of the interposer portions, wiring patterns are formed via insulating layers. The wiring patterns are electrically connected via through holes formed at required positions in the interposer portions. The outer interposer portion is made of an insulator or a metal body. Further, external connection terminals are bonded to one surface of the interposer.

Abstract: A process for forming a metal pattern comprising the following steps of: (a) half-etching a metal plate from one or respective sides thereof by means of first masking which is positioned on one or respective surfaces of the metal plate; (b) applying positive liquid resist on the half-etched metal plate from one or respective sides of the first masking; (c) exposing the positive liquid resist with light from one or respective sides of the first masking; (d) developing the positive liquid resist in such a manner that unexposed positive liquid resist located under the first masking is protected and exposed, uncured liquid resist is removed; (e) half-etching again the metal plate from one or respective sides thereof by means of second masking composed of the first masking and the protected positive liquid resist; (f) repeating the steps (b) to (e) until a metal pattern is obtained from the metal plate; and (g) removing the first masking, and the second or subsequent masking of the unexposed positive liquid resist

Abstract: A process for making a circuit board comprises the following steps of: half-etching a metal layer formed on an insulating substrate by means of a first masking which is positioned on an upper surface of the metal layer; applying a positive liquid resist on the half-etched metal layer from an upper side of the first masking; exposing the positive liquid resist with parallel light from the upper side of the first masking and developing the positive liquid resist in such a manner that a part of the positive liquid resist located under the first masking is protected to be unexposed and undeveloped; etching again the metal layer by means of a second masking composed of the first masking and the protected positive liquid resist to form a conductive pattern on the insulating substrate; and removing the first masking and the second masking from the metal layer.

Abstract: In a method for manufacturing a lead frame, a predetermined pattern is formed on a matrix 10 by a resist, an electro-deposition portion is provided in a cavity formed in the resist patterns 12, and the electrodeposition pattern 13 is separated from the matrix 10. The resist pattern is formed on the matrix 10 so that a cavity portion 17 connecting a plurality of cavity 16 ends for inner lead formation can be included in the resist pattern, and an electro-deposition portion is provided into the cavity portion 17 so that the electro-deposition pattern 13 can be formed into a configuration in which the tip ends of the inner leads 22 are connected by a connecting piece 21, and the electro-deposition pattern 13 is separated from the matrix 10 while the tip ends of the inner leads 22 are connected by the connecting piece 21.

Abstract: In a method for manufacturing a lead frame, a predetermined pattern is formed on a matrix 10 by a resist, an electro-deposition portion is provided in a cavity formed in the resist patterns 12, and the electro-deposition pattern 13 is separated from the matrix 10. The resist pattern is formed on the matrix 10 so that a cavity portion 17 connecting a plurality of cavity 16 ends for inner lead formation can be included in the resist pattern, and an electro-deposition portion is provided into the cavity portion 17 so that the electro-deposition pattern 13 can be formed into a configuration in which the tip ends of the inner leads 22 are connected by a connecting piece 21, and the electro-deposition pattern 13 is separated from the matrix 10 while the tip ends of the inner leads 22 are connected by the connecting piece 21.

Abstract: A method for manufacturing a lead frame employing a resist pattern formed on a matrix and having a cavity therein, in which an electro-deposition pattern is formed. A connecting cavity portion interconnects tip ends of inner lead cavity portions such that a connecting portion interconnects the tip ends of inner leads of the electro-deposition pattern formed in the cavity. The connecting piece is maintained while the electro-deposition pattern is separated from the matrix and the resist.

Abstract: A lead frame to be used for a semiconductor device, comprising: a heat sink having a peripheral area and a central projected land on which a semiconductor chip is to be mounted. The heat sink has a relatively good heat radiating characteristic. A plurality of inner leads are provided, each having an inner end superimposed on the peripheral area of the heat sink by an insulating material. A semiconductor chip has a chip surface on which a junction pattern is arranged, and is mounted on the projected land of the heat sink by an insulating adhesive so that the chip surface faces the projected land. TAB leads are provided for electrically connecting the semiconductor chip to the inner leads, and a sealing resin hermetically seals at least the semiconductor chip.

Abstract: A TAB tape or tape-like carrier used for an automatic bonding process when manufacturing high-frequency semiconductor devices has a plurality of electrically conductive circuit patterns on a flexible insulative film having a plurality of holes located in gaps between adjacent circuit patterns. A ground layer is formed on a back surface of the insulative film, and electrically conductive layers or material are formed on inner peripherals walls of the holes or filled in the holes, so that the ground layer is electrically connected to the respective condcutive layers or material.

Abstract: A TAB tape or tape-like carrier used for an automatic bonding process when manufacturing high-frequency semiconductor devices has a plurality of electrically conductive circuit patterns on a flexible insulative film having a plurality of holes located in gaps between adjacent circuit pattterns. A ground layer is formed on a back surface of the insulative film, and electrically conductive layers or material are formed on inner peripherals walls of the holes or filled in the holes, so that the ground layer is electrically connected to the respective conductive layers or material.

Abstract: A transfer sheet includes an electrodeposited metal foil having a smooth surface and a rough surface attached to a heatproof flexible base sheet. Using such a transfer sheet, a circuit substrate is formed by etching the electrodeposited metal foil to form a circuit pattern, placing the transfer sheet into a cavity of a mold in such a manner that the rough surface of the circuit pattern faces an inside of the mold cavity, pouring a melting resin into the mold cavity to form a molded article, and peeling the transfer sheet from the molded article so that the circuit pattern remains on the resin base.

Abstract: A process for forming a circuit substrate comprising placing an electrodeposited metal foil having a rough surface provided with a large number of fine projections in a cavity of a mold in such a manner that the rough surface faces an inside of the mold cavity; pouring a melting resin into the mold cavity to form a molded article; peeling the metal foil from the molded article to form a large number of fine concavities corresponding to the projections; electroless-plating the resin base to form a metal film; and photoetching to form a circuit pattern on the resin base.