Patents by Inventor Katsuya Oda

Katsuya Oda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10400085
    Abstract: Provided are an electron beam curable resin composition including an olefin resin, a crosslinking agent, and a white pigment, in which the crosslinking agent has a saturated or unsaturated ring structure, at least one atom among atoms forming at least one ring is bonded to any allylic substituent of an allyl group, a methallyl group, an allyl group through a linking group, and a methallyl group through a linking group, and the white pigment is blended in an amount of more than 200 parts by mass and 500 parts by mass or less with respect to 100 parts by mass of olefin resin, a reflector resin frame using the resin composition, a reflector, a semiconductor light-emitting device, and a molding method using the resin composition.
    Type: Grant
    Filed: January 30, 2014
    Date of Patent: September 3, 2019
    Assignee: DAI NIPPON PRINTING CO., LTD.
    Inventors: Aki Kimura, Katsuya Sakayori, Toshiyuki Sakai, Toshimasa Takarabe, Kei Amagai, Kazunori Oda, Megumi Ooishi, Takeshi Sekiguchi, Kenzaburou Kawai, Kurumi Hashimoto
  • Patent number: 10349670
    Abstract: An object of the present invention is to improve the smell, flavor and the like peculiar to curcumine by masking. The present invention provides a method for masking curcumine flavor comprising mixing curcumine with a modified starch.
    Type: Grant
    Filed: April 12, 2011
    Date of Patent: July 16, 2019
    Assignee: SAN-EI GEN F.F.I., INC.
    Inventors: Takeshi Miuchi, Katsuya Tokuno, Masashi Oda, Masayuki Nishino
  • Patent number: 9269869
    Abstract: In order to provide a highly reliable silicon-germanium semiconductor optical element of high luminous efficiency or of low power consumption that can reduce or prevent the occurrence of dislocations or crystal defects on the interface between a light emitting layer or a light absorption layer and a cladding layer, in a silicon-germanium semiconductor optical element, a germanium protective layer 11 of non-light emission is disposed between a germanium light emitting layer or the light absorption layer 10 and a cladding layer 12 disposed above a substrate. The germanium protective layer 11 has the electrical conductivity different from electrical conductivity of the germanium light emitting layer or the light absorption layer 10.
    Type: Grant
    Filed: December 12, 2011
    Date of Patent: February 23, 2016
    Assignee: Hitachi, Ltd.
    Inventors: Tadashi Okumura, Shinichi Saito, Kazuki Tani, Etsuko Nomoto, Katsuya Oda
  • Patent number: 9052449
    Abstract: The light emitting device includes an active layer formed on a semiconductor substrate for emitting light, a semiconductor layer of a first conductivity type electrically connected to one end of the active layer, a semiconductor layer of a second conductivity type electrically connected to the other end of the active layer, first and second electrodes, a feedback mechanism for laser oscillation, and a waveguide for guiding the light emitted from the active layer, in which the active layer is made of a semiconductor having an affinity with a silicon CMOS process, and the semiconductor layer of the first conductivity type and the semiconductor layer of the second conductivity type, and the waveguide are each made of silicon as a part of the semiconductor substrate.
    Type: Grant
    Filed: November 24, 2013
    Date of Patent: June 9, 2015
    Assignee: Hitachi, Ltd.
    Inventors: Misuzu Sagawa, Katsuya Oda, Kazuki Tani
  • Patent number: 9041080
    Abstract: To provide a light-emitting element where electrons are efficiently injected into a Ge light emission layer and light can be efficiently emitted, the light-emitting element has a barrier layer 3 which is formed on an insulating film 2, worked in a size in which quantum confinement effect manifests and made of monocrystalline Si, a p-type diffused layer electrode 5 and an n-type diffused layer electrode 6 respectively provided at both ends of the barrier layer 3, and a monocrystalline Ge light emission part 13 provided on the barrier layer 3 between the electrodes 5, 6. At least a part of current that flows between the electrodes 5, 6 flows in the barrier layer 3 in a horizontal direction with respect to a substrate 1.
    Type: Grant
    Filed: August 2, 2012
    Date of Patent: May 26, 2015
    Assignee: HITACHI, LTD.
    Inventors: Kazuki Tani, Shinichi Saito, Katsuya Oda
  • Publication number: 20150055669
    Abstract: To provide a light-emitting element where electrons are efficiently injected into a Ge light emission layer and light can be efficiently emitted, the light-emitting element has a barrier layer 3 which is formed on an insulating film 2, worked in a size in which quantum confinement effect manifests and made of monocrystalline Si, a p-type diffused layer electrode 5 and an n-type diffused layer electrode 6 respectively provided at both ends of the barrier layer 3, and a monocrystalline Ge light emission part 13 provided on the barrier layer 3 between the electrodes 5, 6. At least a part of current that flows between the electrodes 5, 6 flows in the barrier layer 3 in a horizontal direction with respect to a substrate 1.
    Type: Application
    Filed: August 2, 2012
    Publication date: February 26, 2015
    Inventors: Kazuki Tani, Shinichi Saito, Katsuya Oda
  • Publication number: 20150001581
    Abstract: An APD in which a first undoped semiconductor region and a second undoped semiconductor region having different semiconductor materials and arranged on an insulating film configure a photo-absorption layer and a multiplying layer, respectively, is employed, whereby crystalline of an interface between the photo-absorption layer and the multiplying layer becomes favorable, and a dark current caused by crystal defects can be decreased. Accordingly, light-receiving sensitivity of an avalanche photodiode can be improved. Further, doping concentration of the light-receiving layer and the multiplying layer can be made small. Therefore, a junction capacitance of the diode can be decreased, and a high-speed operation becomes possible.
    Type: Application
    Filed: January 23, 2012
    Publication date: January 1, 2015
    Applicant: HITACHI, LTD.
    Inventors: Katsuya Oda, Shinichi Saito, Kazuki Tani
  • Publication number: 20140355636
    Abstract: In order to provide a highly reliable silicon-germanium semiconductor optical element of high luminous efficiency or of low power consumption that can reduce or prevent the occurrence of dislocations or crystal defects on the interface between a light emitting layer or a light absorption layer and a cladding layer, in a silicon-germanium semiconductor optical element, a germanium protective layer 11 of non-light emission is disposed between a germanium light emitting layer or the light absorption layer 10 and a cladding layer 12 disposed above a substrate. The germanium protective layer 11 has the electrical conductivity different from electrical conductivity of the germanium light emitting layer or the light absorption layer 10.
    Type: Application
    Filed: December 12, 2011
    Publication date: December 4, 2014
    Inventors: Tadashi Okumura, Shinichi Saito, Kazuki Tani, Etsuko Nomoto, Katsuya Oda
  • Publication number: 20140241734
    Abstract: The light emitting device includes an active layer formed on a semiconductor substrate for emitting light, a semiconductor layer of a first conductivity type electrically connected to one end of the active layer, a semiconductor layer of a second conductivity type electrically connected to the other end of the active layer, first and second electrodes, a feedback mechanism for laser oscillation, and a waveguide for guiding the light emitted from the active layer, in which the active layer is made of a semiconductor having an affinity with a silicon CMOS process, and the semiconductor layer of the first conductivity type and the semiconductor layer of the second conductivity type, and the waveguide are each made of silicon as a part of the semiconductor substrate.
    Type: Application
    Filed: November 24, 2013
    Publication date: August 28, 2014
    Applicant: Hitachi, Ltd.
    Inventors: Misuzu Sagawa, Katsuya Oda, Kazuki Tani
  • Patent number: 8680553
    Abstract: An object of the present invention is to provide a germanium laser diode that can be easily formed on a substrate such as silicon by using a normal silicon process and can emit light efficiently. A germanium light-emitting device according to the present invention is a germanium laser diode characterized in that tensile strain is applied to single-crystal germanium serving as a light-emitting layer to be of a direct transition type, a thin semiconductor layer made of silicon, germanium or silicon-germanium is connected adjacently to both ends of the germanium light-emitting layer, the thin semiconductor layer has a certain degree of thickness capable of preventing the occurrence of quantum confinement effect, another end of the thin semiconductor layer is connected to a thick electrode doped with impurities at a high concentration, the electrode is doped to a p type and an n type, a waveguide is formed so as not to be in direct contact with the electrode, and a mirror is formed at an end of the waveguide.
    Type: Grant
    Filed: October 21, 2009
    Date of Patent: March 25, 2014
    Assignee: Hitachi, Ltd.
    Inventors: Shinichi Saito, Masahiro Aoki, Nobuyuki Sugii, Katsuya Oda, Toshiki Sugawara
  • Patent number: 8350301
    Abstract: A semiconductor photodiode includes a semiconductor substrate; a first conduction type first semiconductor layer formed above the semiconductor substrate; a high resistance second semiconductor layer formed above the first semiconductor layer; a first conduction type third semiconductor layer formed above the second semiconductor layer; and a second conduction type fourth semiconductor layer buried in the second semiconductor layer, in which the fourth semiconductor layer is separated at a predetermined distance in a direction horizontal to the surface of the semiconductor substrate.
    Type: Grant
    Filed: July 17, 2010
    Date of Patent: January 8, 2013
    Assignee: Hitachi, Ltd.
    Inventors: Makoto Miura, Shinichi Saito, Youngkun Lee, Katsuya Oda
  • Publication number: 20120287959
    Abstract: A germanium light-emitting device emitting light at high efficiency is provided by using germanium of small threading dislocation density. A germanium laser diode having a high quality germanium light-emitting layer is attained by using germanium formed over silicon dioxide. A germanium laser diode having a carrier density higher than the carrier density limit that can be injected by existent n-type germanium can be provided using silicon as an n-type electrode.
    Type: Application
    Filed: January 28, 2011
    Publication date: November 15, 2012
    Inventors: Kazuki Tani, Shinichi Saito, Toshiki Sugawara, Youngkun Lee, Digh Hisamoto, Makoto Miura, Katsuya Oda
  • Patent number: 8294213
    Abstract: A semiconductor photodiode device includes a semiconductor substrate, a first buffer layer containing a material different from that of the semiconductor substrate in a portion thereof, a first semiconductor layer formed above the buffer layer and having a lattice constant different from that of the semiconductor substrate, a second buffer layer formed above the first semiconductor layer and containing an element identical with that of the first semiconductor layer in a portion thereof, and a second semiconductor layer formed above the buffer layer in which a portion of the first semiconductor layer is formed of a plurality of island shape portions each surrounded with an insulating film, and the second buffer layer allows adjacent islands of the first semiconductor layer to coalesce with each other and is in contact with the insulating film.
    Type: Grant
    Filed: July 17, 2010
    Date of Patent: October 23, 2012
    Assignee: Hitachi, Ltd.
    Inventors: Makoto Miura, Shinichi Saito, Youngkun Lee, Katsuya Oda
  • Publication number: 20110227116
    Abstract: An object of the present invention is to provide a germanium laser diode that can be easily formed on a substrate such as silicon by using a normal silicon process and can emit light efficiently. A germanium light-emitting device according to the present invention is a germanium laser diode characterized in that tensile strain is applied to single-crystal germanium serving as a light-emitting layer to be of a direct transition type, a thin semiconductor layer made of silicon, germanium or silicon-germanium is connected adjacently to both ends of the germanium light-emitting layer, the thin semiconductor layer has a certain degree of thickness capable of preventing the occurrence of quantum confinement effect, another end of the thin semiconductor layer is connected to a thick electrode doped with impurities at a high concentration, the electrode is doped to a p type and an n type, a waveguide is formed so as not to be in direct contact with the electrode, and a mirror is formed at an end of the waveguide.
    Type: Application
    Filed: October 21, 2009
    Publication date: September 22, 2011
    Applicant: HITACHI, LTD.
    Inventors: Shinichi Saito, Masahiro Aoki, Nobuyuki Sugii, Katsuya Oda, Toshiki Sugawa
  • Publication number: 20110031578
    Abstract: A semiconductor photodiode includes a semiconductor substrate; a first conduction type first semiconductor layer formed above the semiconductor substrate; a high resistance second semiconductor layer formed above the first semiconductor layer; a first conduction type third semiconductor layer formed above the second semiconductor layer; and a second conduction type fourth semiconductor layer buried in the second semiconductor layer, in which the fourth semiconductor layer is separated at a predetermined distance in a direction horizontal to the surface of the semiconductor substrate.
    Type: Application
    Filed: July 17, 2010
    Publication date: February 10, 2011
    Inventors: Makoto MIURA, Shinichi Saito, Youngkun Lee, Katsuya Oda
  • Publication number: 20110031529
    Abstract: A semiconductor photodiode device includes a semiconductor substrate, a first buffer layer containing a material different from that of the semiconductor substrate in a portion thereof, a first semiconductor layer formed above the buffer layer and having a lattice constant different from that of the semiconductor substrate, a second buffer layer formed above the first semiconductor layer and containing an element identical with that of the first semiconductor layer in a portion thereof, and a second semiconductor layer formed above the buffer layer in which a portion of the first semiconductor layer is formed of a plurality of island shape portions each surrounded with an insulating film, and the second buffer layer allows adjacent islands of the first semiconductor layer to coalesce with each other and is in contact with the insulating film.
    Type: Application
    Filed: July 17, 2010
    Publication date: February 10, 2011
    Inventors: Makoto MIURA, Shinichi Saito, Youngkun Lee, Katsuya Oda
  • Patent number: 7863162
    Abstract: A manufacturing method of a semiconductor device in which the oxygen and carbon concentrations are reduced at the interface of each layer making up the semiconductor multilayer film. A first semiconductor layer is formed on a single-crystal substrate in a first reactor; the substrate is transferred from the first reactor to a second reactor through a transfer chamber; and a second semiconductor layer is formed on the first semiconductor layer in the second reactor. During substrate transfer, hydrogen is supplied when the number of hydrogen atoms bonding with the surface atoms of the first semiconductor layer is less than the number of surface atoms of the first semiconductor layer, and the supply of hydrogen is stopped when the number of hydrogen atoms bonding with the surface atoms of the first semiconductor layer is greater than the number of surface atoms of the first semiconductor layer.
    Type: Grant
    Filed: January 11, 2006
    Date of Patent: January 4, 2011
    Assignee: Hitachi, Ltd.
    Inventors: Isao Suzumura, Katsuya Oda
  • Patent number: 7521734
    Abstract: A bipolar transistor is provided in which both the base resistance and the base-collector capacitance are reduced and which is capable of operating at a high cutoff frequency. The semiconductor device is structured so that the emitter and extrinsic base are separated from each other by an insulator sidewall and the bottom faces of the insulator sidewall, and the emitter are approximately on the same plane. The extrinsic base electrode and the collector region are separated from each other by an insulator.
    Type: Grant
    Filed: May 28, 2004
    Date of Patent: April 21, 2009
    Assignee: Renesas Technology Corp.
    Inventors: Eiji Oue, Katsuyoshi Washio, Hiromi Shimamoto, Katsuya Oda, Makoto Miura
  • Patent number: 7368763
    Abstract: A high quality silicon carbide (SiC) layer being substantially lower in threading dislocation density than a prior layer is formed on silicon (Si) substrate. A semiconductor device is fabricated in such a way that a semiconductor buffer layer containing Si in part and being higher in defect density than a Si substrate is formed on the Si substrate on the upper portion of which are formed a plurality of pairs of facets being mirror-symmetrical to the surface orientation of a semiconductor substrate, further on the top of the layer a SiC layer is sequentially formed.
    Type: Grant
    Filed: March 7, 2005
    Date of Patent: May 6, 2008
    Assignee: Hitachi, Ltd.
    Inventors: Makoto Miura, Katsuya Oda, Katsuyoshi Washio
  • Publication number: 20080095540
    Abstract: An object of the invention is to clear up factors in deterioration due to optical reflection and to provide an optical transmission apparatus and an optical transmission system in which a superior optical transmission characteristic can be obtained for analog signals even if a reflection phenomenon occurs in an optical transmission line. There are provided a frequency converter (3) for converting the frequency band of a to-be-transmitted electric signal into a predetermined frequency band higher that this frequency band, and a semiconductor laser (4) serving as an electro-optic converter for performing electro-optic conversion upon the frequency-converted electric signal.
    Type: Application
    Filed: June 2, 2005
    Publication date: April 24, 2008
    Applicant: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
    Inventors: Katsuya Oda, Hitomaro Tohgoh, Yoshiyasu Sato, Hiroaki Asano