Abstract: A method of manufacturing a semiconductor device comprising a plurality of single-crystal semiconductor layers formed, for example, in an opening of an insulating film, said semiconductor layers having no or very few crystal defects. The method comprises forming in a first growth chamber a first semiconductor layer of a first conductivity type in an opening of an insulating film and subsequently forming in a second growth chamber a second semiconductor layer of a second conductivity type in an opening of an insulating film, while supplying hydrogen to the surface of the substrate when the substrate is transferred from said first growth chamber to said second growth chamber.

Abstract: A bipolar transistor according to the invention is provided with structure that an intrinsic base made of single crystal Si—Ge and a base leading-out electrode are connected via a link base made of polycrystal Si—Ge by doping at high concentration, further, a part immediately under the intrinsic base has the same conductive type as that of a collector and in a peripheral part, a single crystal Si—Ge layer having the same conductive type as that of a base is provided between the intrinsic base and a collector layer. Hereby, the reduction of the resistance of the link base between the intrinsic base and the base leading-out electrode and the reduction of capacitance between the collector and the base are simultaneously realized, and a self-aligned bipolar transistor wherein capacitance between an emitter and the base and capacitance between the collector and the base are respectively small, power consumption is small and high speed operation is enabled is acquired.

Abstract: The present invention provides a proton-exchange membrane fuel cell power generating equipment that keeps temperature of coolant of a fuel cell in a predetermined temperature range without stop operation of the equipment even when a hot water reserving tank is filled with hot water and the hot water is not discharged to the outside, automatically prevents freezing of a water system during stop operation of the equipment, minimizes maintenance work in a cold region or in the winter season, has high reliability with equipment's service life extended, and supplies hot water heated by efficiently recovering exhaust heat from plural heat exchangers installed in the equipment to the hot water reserving tank. The power generating equipment has a line for circulating and feeding hot water A produced by exchanging heat in the heat exchanger connected to a process gas burner for burning hydrogen until the equipment becomes stable in starting operation.

Abstract: A bipolar transistor using a B-doped Si and Ge alloy for a base in which a Ge content in an emitter-base depletion region and in a base-collector depletion region is greater than a Ge content in a base layer. Diffusion of B from the base layer can be suppressed by making the Ge content in the emitter-base depletion region and in a base-collector depletion region on both sides of the base layer greater than the Ge content in the base layer since the diffusion coefficient of B in the SiGe layer is lowered as the Ge contents increases.

Abstract: A bipolar transistor according to the invention is provided with structure that an intrinsic base made of single crystal Si—Ge and a base leading-out electrode are connected via a link base made of polycrystal Si—Ge by doping at high concentration, further, a part immediately under the intrinsic base has the same conductive type as that of a collector and in a peripheral part, a single crystal Si—Ge layer having the same conductive type as that of a base is provided between the intrinsic base and a collector layer. Hereby, the reduction of the resistance of the link base between the intrinsic base and the base leading-out electrode and the reduction of capacitance between the collector and the base are simultaneously realized, and a self-aligned bipolar transistor wherein capacitance between an emitter and the base and capacitance between the collector and the base are respectively small, power consumption is small and high speed operation is enabled is acquired.

Abstract: A bipolar transistor using a B-doped Si and Ge alloy for a base in which a Ge content in an emitter-base depletion region and in a base-collector depletion region is greater than a Ge content in a base layer. Diffusion of B from the base layer can be suppressed by making the Ge content in the emitter-base depletion region and in a base-collector depletion region on both sides of the base layer greater than the Ge content in the base layer since the diffusion coefficient of B in the SiGe layer is lowered as the Ge contents increases.

Abstract: A bipolar transistor using a B-doped Si and Ge alloy for a base in which a Ge content in an emitter-base depletion region and in a base-collector depletion region is greater than a Ge content in a base layer. Diffusion of B from the base layer can be suppressed by making the Ge content in the emitter-base depletion region and in a base-collector depletion region on both sides of the base layer greater than the Ge content in the base layer since the diffusion coefficient of B in the SiGe layer is lowered as the Ge contents increases.

Abstract: A bipolar transistor using a B-doped Si and Ge alloy for a base in which a Ge content in an emitter-base depletion region and in a base-collector depletion region is greater than a Ge content in a base layer. Diffusion of B from the base layer can be suppressed by making the Ge content in the emitter-base depletion region and in a base-collector depletion region on both sides of the base layer greater than the Ge content in the base layer since the diffusion coefficient of B in the SiGe layer is lowered as the Ge contents increases.

Abstract: A semiconductor device having an MODFET and at least one other device formed on one identical semiconductor substrate, in which an intrinsic region for the MODFET is formed by selective growth in a groove formed on a semiconductor substrate having an insulation film on the side wall of the groove, and single-crystal silicon at the bottom of the groove, is disclosed. The step between the MODFET and the at least one other device mounted together on one identical substrate can be thereby decreased, and each of the devices can be reduced in the size and integrated to a high degree, and the interconnection length can be shortened to reduce power consumption.

Abstract: A bipolar transistor according to the invention is provided with structure that an intrinsic base made of single crystal Si—Ge and a base leading-out electrode are connected via a link base made of polycrystal Si—Ge by doping at high concentration, further, a part immediately under the intrinsic base has the same conductive type as that of a collector and in a peripheral part, a single crystal Si—Ge layer having the same conductive type as that of a base is provided between the intrinsic base and a collector layer. Hereby, the reduction of the resistance of the link base between the intrinsic base and the base leading-out electrode and the reduction of capacitance between the collector and the base are simultaneously realized, and a self-aligned bipolar transistor wherein capacitance between an emitter and the base and capacitance between the collector and the base are respectively small, power consumption is small and high speed operation is enabled is acquired.

Abstract: A hydrogen production apparatus is disclosed which operates based on a steam reforming method and operates without supply of steam from outside. The hydrogen production apparatus humidifies air by allowing air to contact with warm water to generate a mixture of air and steam, mixes the mixture with a hydrocarbon fuel. Alternatively, the hydrogen production apparatus humidifies a mixture of a hydrocarbon fuel and air by allowing the mixture to contact with warm water to generate a mixed gas of the hydrocarbon fuel, air, and steam. The hydrogen production apparatus then allows air to partially oxidize the hydrocarbon fuel and allows the steam to reform the hydrocarbon fuel, resulting in the production of hydrogen.

Abstract: A self-aligned bipolar transistor which has a small base resistance and small emitter-base and collector-base capacitances and is operable at high speed is disclosed. This bipolar transistor is characterized in that a low concentration collector region made of single crystal Si--Ge is self-alignedly formed between an intrinsic base of single crystal Si--Ge and an intrinsic base, and that an extrinsic base electrode and an intrinsic base are connected only through a doped external base. With this arrangement, an energy barrier is not established at the collector base interface owing to the formation of the low concentration region of single crystal Si--Ge, so that the transit time of the carriers charged from the emitter is shortened. The connection between the intrinsic base and the extrinsic base electrode via the doped external base results in the reduction of the base resistance.