Abstract: A cathode potential is applied to a conductive layer formed on a substrate having a depression pattern. A plating solution in electrical contact with an anode is supplied to the conductive layer to form a plating film on the conductive layer. At this time, the plating solution is supplied by causing an impregnated member containing the plating solution to face the conductive layer. Since the plating solution stays in the depression, a larger amount of plating solution is supplied than on the upper surface of the substrate, and the plating rate of the plating film in the depression increases. Consequently, the plating film can be preferentially formed in the depression such as a groove or hole.

Abstract: A method of making a semiconductor device, comprises preparing a plurality of lots each including semiconductor substrates to be processed, the plurality of lots including at least first and second lots, processing the plurality of lots for every one lot, using a semiconductor manufacturing apparatus, judging whether or not the semiconductor manufacturing apparatus is subjected to cleaning before the second lot is processed, depending upon both a first processing type of the first lot to be processed and a second processing type of the second lot to be processed after the first lot, and processing the second lot without the cleaning in the case where the second lot does not require the cleaning.

Abstract: Substrates having surfaces in a highly clean condition are subjected to a thermal process in a heating furnace. In a thermal processing apparatus for processing substrates by a predetermined thermal process that heats the substrates by a heating means, the substrates are held in a vertical position at horizontal intervals in a reaction vessel. Cleaning liquids are supplied into the reaction vessel to clean the substrates, and then the cleaning liquids are drained away through a drain port, and then a process gas is supplied into the reaction vessel to process the substrates by a thermal process. The substrates having the cleaned clean surfaces are subjected to the thermal process without being exposed to the ambient atmosphere and can be satisfactorily processed by the thermal process.

Abstract: After a barrier film is formed on a pad electrode, Ni particles having a diameter of 2 ?m or less are selectively deposited on the barrier film, thereby forming a Ni fine particle film. Then, a bump electrode made of a solder ball is provided on the pad electrode through the Ni fine particle film. Thereafter, the bump electrode is melted by a heat treatment to join the Ni fine particle film to the bump electrode. Thus, a bump electrode structure is finished.

Abstract: The present invention is a transfer mask for exposure comprising a mask portion having a plurality of cells, each of which an opening of a predetermined pattern is formed in. When one side of the plurality of cells is exposed to a charged particle beam, each of the plurality of cells is adapted to make the charged particle beam pass through itself to the other side thereof based on the pattern of the opening formed in the cell. Thus, when a substrate to be processed is arranged on the other side of the cell, the pattern of the opening formed in the cell is transferred to the substrate to be processed and hence an exposure pattern is formed on the substrate to be processed. The feature of the present invention is that a part of or all the plurality of cells can be exchanged at the mask portion.

Abstract: The present invention relates to a semiconductor device in which an electrode of a device formed on a substrate such as a semiconductor wafer and an electrode of a wiring structure such as an interposer are connected to each other through a connecting electrode extending through the substrate, and a method of manufacturing the same. A semiconductor device according to the present invention comprises a first substrate including a front surface and a back surface, a first device having a first electrode being formed on the front surface; and a wiring structure formed with a second electrode, the wiring structure having a principal surface. The first electrode of the first device and the second electrode of the wiring structure are connected to each other by a connecting electrode extending through the first substrate from the front surface to the back surface thereof. Substantially all the back surface of the first substrate is bonded to the principal surface of the wiring structure.

Abstract: According to the ion generation method, ion source material composed of an element of desired ions to be generated and I is heated so that vapor of the compound is generated, and the ions are generated by discharging the vapor. The iodide has no corrosiveness, and can be stably ionized. Further, it hardly reacts with oxygen or water and is safe.

Abstract: An object of the present invention is to provide to an electron beam tube and electron beam extraction window capable of generating high output electron beam by effectively releasing heat generated when an electron beam passes through a window whereby temperature rise of the window is controlled and breakage of the window is prevented. The electron beam tube comprises first projections continuously provided on a first surface of the window, and second projections which are continuously formed on a second surface of the window and are located in positions corresponding to areas between the first projections wherein a projection height of the second projection, a projection width of the second projection and a distance between the adjacent second projections are smaller than those of the first projections, respectively.

Abstract: A zero-point detecting method of this invention is performed prior to testing the electrical characteristics of a wafer by bringing an object to be tested on a stage and probes of a probe card into contact with each other. The surface of a zero-point detection plate is made of a conductive material (e.g., copper). The zero-point detection plate is used to detect a zero point as a position where the surface of the object to be tested comes into contact with the probe pins.

Abstract: There is disclosed a film forming method comprising continuously discharging a solution adjusted so as to spread over a substrate by a given amount to the substrate through a discharge port disposed in a nozzle, moving the nozzle and substrate with respect to each other, and holding the supplied solution onto the substrate to form a liquid film, wherein a distance h between the discharge port of the nozzle and the substrate is set to be not less than 2 mm and to be in a range less than 5×10?5 q? (mm) given with respect to a surface tension ? (N/m) of the solution, discharge speed q (m/sec) of the solution continuously discharged through the discharge port, and a constant of 5×10?5 (m·sec/N)

Abstract: There is disclosed a film forming method comprising continuously discharging a solution adjusted so as to spread over a substrate by a given amount to the substrate through a discharge port disposed in a nozzle, moving the nozzle and substrate with respect to each other, and holding the supplied solution onto the substrate to form a liquid film, wherein a distance h between the discharge port of the nozzle and the substrate is set to be not less than 2 mm and to be in a range less than 5×10?5 q? (mm) given with respect to a surface tension ? (N/m) of the solution, discharge speed q (m/sec) of the solution continuously discharged through the discharge port, and a constant of 5×10?5 (m·sec/N).

Abstract: According to the present invention, there is provided a method of manufacturing a semiconductor device, where a soluble thin film which is soluble in a dissolving liquid is used. According to the method of the present invention, when a soluble thin film is formed between a film to be processed which should be patterned and a mask pattern, it becomes possible to remove the mask pattern by lifting-off. On the other hand, when the thin film is used for a dummy layer for forming an air wiring structure, the dummy layer can be removed without performing ashing using oxygen plasma.

Abstract: A multichip semiconductor device is disclosed in which chips are stacked each of which comprises a semiconductor substrate formed on top with circuit components and an interlayer insulating film formed on the top of the semiconductor substrate. At least one of the chips has a connect plug of a metal formed in a through hole that passes through the semiconductor substrate and the interlayer insulating film. The chip with the connect plug is electrically connected with another chip by that connect plug.

Abstract: An electronic commerce for semiconductor products comprises a network, a client terminal, a connection server, a virtual production line, and a real production line. The real production line actually manufactures semiconductor products. The virtual production line provides a computer with substantially the same functions as the real production line and computes an optimal lot progress. The connection server connects the virtual production line to the client terminal via the network. When a condition is entered from the client terminal, the connection server transfers this condition to the virtual production line. Simulation is performed realtime for determining whether a product flows in the virtual production line under the transferred condition. The connection server transfers a simulation result to the client terminal. Based on the simulation result, a electronic commerce is conducted.

Abstract: By steps of forming first masks 13, 14 each having a first pattern on a first surface of a substrate 11 on which a membrane is to be formed, etching the first surface of the substrate 11 by using the first masks 13, 14 to forming first support beams 15, positioning a second surface of the substrate 11 on the basis of the first pattern on the first surface, forming a second mask 17 having a second pattern on the second surface of the substrate 11 based on the alignment and etching the second surface of the substrate 11 in dry by using the second mask 17 to form the second support beams 20, a membrane member 22a where the first and second support beams 15, 20 are formed on both surfaces of the membrane 12 is manufactured. Consequently, it is possible to provide the membrane member that is sufficient in strength and is hard to be deformed by heat.

Abstract: An object of the present invention is to provide to an electron beam tube and electron beam extraction window capable of generating high output electron beam by effectively releasing heat generated when an electron beam passes through a window whereby temperature rise of the window is controlled and breakage of the window is prevented.

Abstract: A multichip semiconductor device is disclosed in which chips are stacked each of which comprises a semiconductor substrate formed on top with circuit components and an interlayer insulating film formed on the top of the semiconductor substrate. At least one of the chips has a connect plug of a metal formed in a through hole that passes through the semiconductor substrate and the interlayer insulating film. The chip with the connect plug is electrically connected with another chip by that connect plug.

Abstract: There is disclosed a film forming method comprising continuously discharging a solution adjusted so as to spread over a substrate by a given amount to the substrate through a discharge port disposed in a nozzle, moving the nozzle and substrate with respect to each other, and holding the supplied solution onto the substrate to form a liquid film, wherein a distance h between the discharge port of the nozzle and the substrate is set to be not less than 2 mm and to be in a range less than 5×10−5 q&ggr; (mm) given with respect to a surface tension &ggr; (N/m) of the solution, discharge speed q (m/sec) of the solution continuously discharged through the discharge port, and a constant of 5×10−5 (m·sec/N).

Abstract: According to the present invention, there is provided a method of manufacturing a semiconductor device, where a soluble thin film which is soluble in a dissolving liquid is used. According to the method of the present invention, when a soluble thin film is formed between a film to be processed which should be patterned and a mask pattern, it becomes possible to remove the mask pattern by lifting-off. On the other hand, when the thin film is used for a dummy layer for forming an air wiring structure, the dummy layer can be removed without performing ashing using oxygen plasma.

Abstract: An electronic commerce for semiconductor products comprises a network, a client terminal, a connection server, a virtual production line, and a real production line. The real production line actually manufactures semiconductor products. The virtual production line provides a computer with substantially the same functions as the real production line and computes an optimal lot progress. The connection server connects the virtual production line to the client terminal via the network. When a condition is entered from the client terminal, the connection server transfers this condition to the virtual production line. Simulation is performed realtime for determining whether a product flows in the virtual production line under the transferred condition. The connection server transfers a simulation result to the client terminal. Based on the simulation result, a electronic commerce is conducted.