Patents by Inventor Katsuyuki Sato
Katsuyuki Sato has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11955170Abstract: A static random-access memory is set forth comprising: a word line circuit for generating a word line signal on a word line; a plurality of six-transistor memory cells arranged between a first bitline, a second bitline and the word line for simultaneously selecting one of either all or a portion of the plurality of six-transistor memory cells for data reading or writing, and wherein each memory cell includes first and second n-channel transistors and a bitline precharge circuit for precharging the first bitline and second bitline to a voltage of Vdd/2 prior to the first and second n-channel transistors receiving the word line signal.Type: GrantFiled: August 21, 2023Date of Patent: April 9, 2024Assignee: UNTETHER AI CORPORATIONInventors: Katsuyuki Sato, William Martin Snelgrove, Saijagan Saijagan, Joseph Francis Rohlman
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Publication number: 20240021237Abstract: A static random-access memory is set forth comprising: a word line circuit for generating a word line signal on a word line; a plurality of six-transistor memory cells arranged between a first bitline, a second bitline and the word line for simultaneously selecting one of either all or a portion of the plurality of six-transistor memory cells for data reading or writing, and wherein each memory cell includes first and second n-channel transistors and a bitline precharge circuit for precharging the first bitline and second bitline to a voltage of Vdd/2 prior to the first and second n-channel transistors receiving the word line signal.Type: ApplicationFiled: June 21, 2022Publication date: January 18, 2024Inventors: Katsuyuki SATO, William Martin SNELGROVE, Saijagan SAIJAGAN, Joseph Francis ROHLMAN
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Publication number: 20230420040Abstract: A static random-access memory is set forth comprising: a word line circuit for generating a word line signal on a word line; a plurality of six-transistor memory cells arranged between a first bitline, a second bitline and the word line for simultaneously selecting one of either all or a portion of the plurality of six-transistor memory cells for data reading or writing, and wherein each memory cell includes first and second n-channel transistors and a bitline precharge circuit for precharging the first bitline and second bitline to a voltage of Vdd/2 prior to the first and second n-channel transistors receiving the word line signal.Type: ApplicationFiled: August 21, 2023Publication date: December 28, 2023Inventors: Katsuyuki SATO, William Martin SNELGROVE, Saijagan SAIJAGAN, Joseph Francis ROHLMAN
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Publication number: 20230395141Abstract: A low-power static random access memory (SRAM) is set forth which includes a cache memory function without requiring a special bit cell, and which realizes robust read and write operation without any write assist circuit at 16 nm or below FinFET technology. The SRAM comprises a half-Vdd precharge 6 T SRAM cell array for robust operation at low supply voltage at 16 nm or below, and with cacheable dynamic flip-flop based differential amplifier referred to as a main amplifier (MA). Prior art 6 T SRAM cell arrays use Vdd or Vdd-Vth precharge schemes, and have separate read and write amplifiers. The SRAM set forth uses one main amplifier only, which is connected to the bit line (BL) through a transmission gate. The main amplifiers functions as a read amplifier, write amplifier, and a cache memory.Type: ApplicationFiled: August 21, 2023Publication date: December 7, 2023Inventors: Katsuyuki SATO, William Martin SNELGROVE, Saijagan SAIJAGAN
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Publication number: 20230395142Abstract: A low-power static random access memory (SRAM) is set forth which includes a cache memory function without requiring a special bit cell, and which realizes robust read and write operation without any write assist circuit at 16 nm or below FinFET technology. The SRAM comprises a half-Vdd precharge 6T SRAM cell array for robust operation at low supply voltage at 16 nm or below, and with cacheable dynamic flip-flop based differential amplifier referred to as a main amplifier (MA). Prior art 6T SRAM cell arrays use Vdd or Vdd-Vth precharge schemes, and have separate read and write amplifiers. The SRAM set forth uses one main amplifier only, which is connected to the bit line (BL) through a transmission gate. The main amplifiers functions as a read amplifier, write amplifier, and a cache memory.Type: ApplicationFiled: June 21, 2022Publication date: December 7, 2023Inventors: Katsuyuki SATO, William Martin SNELGROVE, Saijagan SAIJAGAN
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Publication number: 20230375633Abstract: An information processing device (1) includes: a first acquisition unit (11) that acquires history data of at least one of a current, a voltage, or a temperature of a power storage device mounted on a vehicle; a second acquisition unit (11) that acquires at least one of a use period until replacement of the power storage device or a cause of replacement; a deriving unit (11) that derives determination data based on the history data acquired by the first acquisition unit (11); a setting unit (11) that sets a degree of deterioration at the time of replacement of the power storage device based on at least one of the use period or the cause of replacement acquired by the second acquisition unit (11); and a determination unit (11) that determines a degree of deterioration of the power storage device based on a relationship between determination data and the degree of deterioration obtained by a plurality of other power storage devices in advance, and the determination data of the power storage device to be determiType: ApplicationFiled: September 17, 2021Publication date: November 23, 2023Inventor: Katsuyuki SATO
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Publication number: 20220242890Abstract: The present invention relates to a compound of general formula (I) (wherein R1, R2, and R3 are each independently a hydrogen atom or a lower alkyl and X is an alkali metal cation, ammonium cation, or quaternary ammonium cation). This compound is highly soluble in water, and solutions thereof need not be neutralized when administered to the living body. The compound is useful as a medicine, etc.Type: ApplicationFiled: October 26, 2020Publication date: August 4, 2022Applicant: ASAl Germanium Research Institute Co., Ltd.Inventors: Takashi Nakamura, Katsuyuki Sato, Yasuhiro Shimada
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Publication number: 20220237342Abstract: A development support apparatus includes: an estimation unit that estimates behavior of an energy storage device by using an equivalent circuit model reflecting a state of charge (SOC)-operating voltage characteristic in a high change-amount region where an amount of change in an operating voltage with respect to an amount of change in the SOC is relatively higher than in other regions among SOC-operating voltage characteristics during constant current charge and discharge of the energy storage device; and an output unit that outputs a result of an estimation by the estimation unit.Type: ApplicationFiled: June 9, 2020Publication date: July 28, 2022Inventors: Katsuyuki SATO, Muhammad Syahid Fitri Bin Azahar
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Patent number: 10731232Abstract: The present invention provides a method for efficiently leaching copper from copper sulfide ore by separating and recovering iodine, and iron(III) ions to be used are regenerated by a heap of stacked ore in the method for leaching copper from copper sulfide using a sulfuric acid solution containing iodide ions and iron(III) ions as a leaching solution.Type: GrantFiled: September 12, 2016Date of Patent: August 4, 2020Assignee: JX NIPPON MINING & METALS CORPORATIONInventors: Katsuyuki Sato, Akira Miura
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Patent number: 10562989Abstract: A fluorine-containing boric acid PVB composite comprising a condensate of a fluorine-containing alcohol, boric acid and polyvinyl butyral, wherein the fluorine-containing alcohol is represented by the general formula: Rf(A-OH)k wherein k is 1 or 2; when k is 1, Rf is a perfluoroalkyl group having 6 or less carbon atoms, a polyfluoroalkyl group in which some of the fluorine atom or atoms of the perfluoroalkyl group are replaced by hydrogen atom or atoms, a polyfluoroalkyl group containing a terminal perfluoroalkyl group having 6 or less carbon atoms and a perfluoroalkylene group having 6 or less carbon atoms, or a linear or branched, perfluoroalkyl group containing a terminal perfluoroalkyl group having 6 or less carbon atoms, a perfluoroalkylene group having 6 or less carbon atoms and ether bonds; when k is 2, Rf is a linear or branched, perfluoroalkylene group or polyfluoroalkylene group, containing a perfluoroalkylene group having 6 or less carbon atoms and ether bonds; and A is an alkylene group havingType: GrantFiled: March 10, 2016Date of Patent: February 18, 2020Assignees: Unimatec Co., Ltd., Hirosaki UniversityInventors: Takeshi Fukushima, Katsuyuki Sato, Hideo Sawada
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Publication number: 20190217571Abstract: An oil-absorbing mat for disposing on a floor and absorbing an oil, comprising: an oil absorber for absorbing the oil, the oil absorber being provided on the upper surface of the oil-absorbing mat; and a permeation preventing layer for preventing the permeation of the oil, the permeation preventing layer being provided on the floor surface of the oil-absorbing mat; wherein the oil absorber has a smoothness of 0.8 s or more as measured on the basis of JIS P 8155; and wherein the oil absorber has an air resistance (Oken Type) of 28 s or less as measured on the basis of JIS P 8117.Type: ApplicationFiled: August 10, 2017Publication date: July 18, 2019Inventors: Tsuyoshi Ohashi, Katsuyuki Sato, Takatoshi Totoki, Ricardo Mizoguchi Gorgoll
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Patent number: 10196473Abstract: Provided is a fluorine-containing diblock copolymer having good water and oil repellency by using, as a raw material, a fluorine-containing (meth)acrylic ester having low bioaccumulation potential. The fluorine-containing diblock copolymer is produced by: process (A) a process for producing a fluorine-containing diblock copolymer by polymerizing a fluorine-containing (meth)acrylic ester represented by the following formula (1) in the presence of a trithiocarbonic ester compound and a radical polymerization initiator and then polymerizing a non-fluorine vinyl-based monomer, or process (B) a process for producing a fluorine-containing diblock copolymer by polymerizing a non-fluorine vinyl-based monomer in the presence of a trithiocarbonic ester compound and a radical polymerization initiator and then polymerizing a fluorine-containing (meth)acrylic ester represented by the following formula (1).Type: GrantFiled: December 22, 2014Date of Patent: February 5, 2019Assignee: Unimatec Co., Ltd.Inventors: Satoru Saito, Katsuyuki Sato, Takehiro Sonoi
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Patent number: 10093812Abstract: A composite material of resin—fluorine-containing boric acid composite particles comprising a resin, and a condensate of boric acid and a fluorine-containing alcohol represented by the general formula RF-A-OH (wherein RF is a perfluoroalkyl group having 6 or less carbon atoms, or a polyfluoroalkyl group, in which some of the fluorine atom or atoms of the perfluoroalkyl group are replaced by a hydrogen atom or hydrogen atoms, and which contains a terminal perfluoroalkyl group having 6 or less carbon atoms and a perfluoroalkylene group having 6 or less carbon atoms; and A is an alkylene group having 1 to 6 carbon atoms, or comprising a resin, and a condensate of boric acid, the said fluorine-containing alcohol and an alkoxysilane at a molar ratio of 1.0 or less based on the fluorine-containing alcohol. These composite materials of resin—fluorine-containing boric acid composite particles has good adhesion to inorganic substrates, and the like.Type: GrantFiled: March 10, 2015Date of Patent: October 9, 2018Assignees: Unimatec Co., Ltd., Hirosaki UniversityInventors: Takeshi Fukushima, Katsuyuki Sato, Hideo Sawada
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Patent number: 10088396Abstract: Fluorine-containing boric acid composite capsule particles comprising a condensate of a fluorine-containing alcohol, a guest compound, and boric acid particles, wherein the fluorine-containing alcohol is represented by the general formula: RF-A-OH wherein RF is: a perfluoroalkyl group having 6 or less carbon atoms, a linear or branched perfluoroalkyl group containing a terminal perfluoroalkyl group having 6 or less carbon atoms and a perfluoroalkylene group having 6 or less carbon atoms, and containing an O, S, or N atom, or a polyfluoroalkyl group in which some of the fluorine atom or atoms of the perfluoroalkyl group are replaced by hydrogen atom or atoms, and which contains a terminal perfluoroalkyl group having 6 or less carbon atoms and a perfluoroalkylene group having 6 or less carbon atoms, wherein the perfluoroalkylene group may contain an O, S, or N atom, and one fluorine atom of the terminal perfluoroalkyl group may be replaced by —(CH2)fOH (wherein f is an integer of 1 to 3); and A is an alkylType: GrantFiled: March 10, 2015Date of Patent: October 2, 2018Assignees: Unimatec Co., Ltd., Hirosaki UniversityInventors: Takeshi Fukushima, Katsuyuki Sato, Hideo Sawada
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Publication number: 20180187287Abstract: The present invention provides a method for efficiently leaching copper from copper sulfide ore by separating and recovering iodine, and iron(III) ions to be used are regenerated by a heap of stacked ore in the method for leaching copper from copper sulfide using a sulfuric acid solution containing iodide ions and iron(III) ions as a leaching solution.Type: ApplicationFiled: September 12, 2016Publication date: July 5, 2018Applicant: JX NIPPON MINING & METALS CORPORATIONInventors: Katsuyuki SATO, Akira MIURA
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Patent number: 9937551Abstract: Disclosed is an emulsion formed using, as an emulsifier, 0.01 to 30 parts by weight of a perfluoroalkylethyl phosphonic acid salt represented by the general formula: CnF2n+1CH2CH2P(O)(OM1)(OM2) [III] (M1: a hydrogen atom, ammonium salt, or organic amine salt, M2: an ammonium salt or organic amine salt, n: 1 to 6), based on 100 parts by weight of a perfluoropolyether oil represented by the general formula: RfO(C3F6O)p(C2F4O), (CF2O), Rf? [I] (Rf and Rf?: C1-C5 perfluoroalkyl groups, p+q+r: 2 to 200) or the general formula: F(CF2CF2CF2O)nCF2CF3 [II](n: 2 to 100), or a perfluorocarbon compound. In spite of using, as an emulsifier, a compound having a perfluoroalkyl group containing 6 or less carbon atoms, which is said to have low bioaccumulation potential, the emulsion exhibits excellent emulsification stability, and therefore can be effectively used as a surface-treating agent, such as a mold-releasing agent.Type: GrantFiled: April 30, 2015Date of Patent: April 10, 2018Assignee: Unimatec Co., Ltd.Inventors: Yoshiyama Kaneumi, Katsuyuki Sato
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Publication number: 20180051104Abstract: A fluorine-containing boric acid PVB composite comprising a condensate of a fluorine-containing alcohol, boric acid and polyvinyl butyral, wherein the fluorine-containing alcohol is represented by the general formula: Rf(A-OH)k wherein k is 1 or 2; when k is 1, Rf is a perfluoroalkyl group having 6 or less carbon atoms, a polyfluoroalkyl group in which some of the fluorine atom or atoms of the perfluoroalkyl group are replaced by hydrogen atom or atoms, a polyfluoroalkyl group containing a terminal perfluoroalkyl group having 6 or less carbon atoms and a perfluoroalkylene group having 6 or less carbon atoms, or a linear or branched, perfluoroalkyl group containing a terminal perfluoroalkyl group having 6 or less carbon atoms, a perfluoroalkylene group having 6 or less carbon atoms and ether bonds; when k is 2, Rf is a linear or branched, perfluoroalkylene group or polyfluoroalkylene group, containing a perfluoroalkylene group having 6 or less carbon atoms and ether bonds; and A is an alkylene group havingType: ApplicationFiled: March 10, 2016Publication date: February 22, 2018Inventors: Takeshi FUKUSHIMA, Katsuyuki SATO, Hideo SAWADA
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Publication number: 20180009920Abstract: Disclosed is a fluorine-containing oligomer comprising a copolymer of a fluoroalkyl alcohol (meth)acrylic acid derivative represented by the general formula: CnF2n+1(CH2CF2)a(CF2CF2)b(CH2CH2)cOCOCR?CH2??[I] wherein R is a hydrogen atom or a methyl group, n is an integer of 1 to 6, a is an integer of 1 to 4; b is an integer of 0 to 3; and c is an integer of 1 to 3; and a (meth)acrylic acid derivative represented by the general formula: (CH2?CRCO)mR???[II] wherein R is a hydrogen atom or a methyl group, m is 1, 2, or 3; and when m is 1, R? is OH group, NH2 group that is unsubstituted or mono- or di-substituted with an alkyl group having 1 to 6 carbon atoms, or a monovalent group derived from an alkylene glycol or polyalkylene glycol group containing an alkylene group having 2 or 3 carbon atoms; when m is 2 or 3, R? is a divalent or trivalent organic group derived from a diol or triol. The copolymerization reaction is performed using a hydrocarbon-based peroxide or azo compound polymerization initiator.Type: ApplicationFiled: September 22, 2017Publication date: January 11, 2018Inventors: Katsuyuki Sato, Hideo Sawada
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Patent number: 9860901Abstract: A transmission device includes: a communication unit that communicates with a plurality of reception devices; a transmission data setting unit that compares the number of the reception devices as transmission targets of transmission data representing content and a predetermined threshold value and sets the transmission data to be transmitted to the reception devices to each reception device based on a result of the comparison such that a transmission rate for transmission that represents an amount of data transmission necessary to transmit the transmission data to the reception devices does not exceed a reference transmission rate representing an amount of data transmission at which data can be transmitted in the communication, and the transmission data having relatively high reproduction quality is transmitted to the reception devices as the transmission targets; and a transmission processing unit that concurrently transmits the transmission data set by the transmission data setting unit to the correspondingType: GrantFiled: February 23, 2011Date of Patent: January 2, 2018Assignee: Sony CorporationInventor: Katsuyuki Sato
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Patent number: 9803044Abstract: Disclosed is a fluorine-containing oligomer comprising a copolymer of a fluoroalkyl alcohol (meth)acrylic acid derivative represented by the general formula: CnF2n+1(CH2CF2)a(CF2CF2)b(CH2CH2)cOCOCR?CH2??[I] wherein R is a hydrogen atom or a methyl group, n is an integer of 1 to 6, a is an integer of 1 to 4; b is an integer of 0 to 3; and c is an integer of 1 to 3; and a (meth)acrylic acid derivative represented by the general formula: (CH2?CRCO)mR???[II] wherein R is a hydrogen atom or a methyl group, m is 1, 2, or 3; and when m is 1, R? is OH group, NH2 group that is unsubstituted or mono- or di-substituted with an alkyl group having 1 to 6 carbon atoms, or a monovalent group derived from an alkylene glycol or polyalkylene glycol group containing an alkylene group having 2 or 3 carbon atoms; when m is 2 or 3, R? is a divalent or trivalent organic group derived from a diol or triol. The copolymerization reaction is performed using a hydrocarbon-based peroxide or azo compound polymerization initiator.Type: GrantFiled: March 6, 2014Date of Patent: October 31, 2017Assignees: Unimatec Co., Ltd., Hirosaki UniversityInventors: Katsuyuki Sato, Hideo Sawada