Patents by Inventor Kaushal K. Singh

Kaushal K. Singh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20100261049
    Abstract: A readily manufacturable, high power, high energy, large area energy storage device is described. The energy storage device may use processes compatible with large area processing tools, such as large area coating systems and linear processing systems compatible with flexible thin film substrates. The energy storage devices may include batteries, super-capacitors and ultra-capacitors. An energy storage device may include a multiplicity of thin film cells formed on a single substrate, the multiplicity of cells being electrically connected in series, each one of the multiplicity of cells comprising: a current collector on the surface of the substrate; a first electrode on the current collector; a second electrode over the first electrode; and an electrolyte layer between the first electrode and the second electrode.
    Type: Application
    Filed: April 13, 2009
    Publication date: October 14, 2010
    Applicant: APPLIED MATERIALS, INC.
    Inventors: BYUNG-SUNG LEO KWAK, Nety M. Krishna, Omkaram Nalamasu, Kaushal K. Singh, Steven Verhaverbeke
  • Publication number: 20100255660
    Abstract: A method of forming a solar cell incorporating a compound semiconductor is provided. The compound semiconductor is generally of the “II/VI” variety, and is formed by depositing one or more group II elements in a vapor deposition process, and then contacting the deposited layer with a liquid bath of the group VI elements. The liquid bath may comprise a pure element or a mixture of elements. The contacting is performed under a non-reactive atmosphere, or vacuum, and any fugitive vapors may be captured by a cold trap and recycled. The substrate may be subsequently annealed to remove any excess of the group VI elements, which may be similarly recycled.
    Type: Application
    Filed: April 6, 2010
    Publication date: October 7, 2010
    Applicant: APPLIED MATERIALS, INC.
    Inventors: Kaushal K. Singh, Ralf Hofmann, Nety M. Krishna
  • Publication number: 20100252108
    Abstract: Methods for fabrication of copper delafossite materials include a low temperature sol-gel process for synthesizing CuBO2 powders, and a pulsed laser deposition (PLD) process for forming thin films of CuBO2, using targets made of the CuBO2 powders. The CuBO2 thin films are optically transparent p-type semiconductor oxide thin films. Devices with CuBO2 thin films include p-type transparent thin film transistors (TTFT) comprising thin film CuBO2, as a channel layer and thin film solar cells with CuBO2 p-layers. Solid state dye sensitized solar cells (SS-DSSC) comprising CuBO2 in various forms, including “core-shell” and “nano-couple” particles, and methods of manufacture, are also described.
    Type: Application
    Filed: December 21, 2009
    Publication date: October 7, 2010
    Applicant: APPLIED MATERIALS, INC.
    Inventors: Kaushal K. Singh, Omkaram Nalamasu, Nety M. Krishna, Michael Snure, Ashutosh Tiwari
  • Publication number: 20100175755
    Abstract: Methods for fabrication of copper delafossite materials include a low temperature sol-gel process for synthesizing CuBO2 powders, and a pulsed laser deposition (PLD) process for forming thin films of CuBO2, using targets made of the CuBO2 powders. The CuBO2 thin films are optically transparent p-type semiconductor oxide thin films. Devices with CuBO2 thin films include p-type transparent thin film transistors (TTFT) comprising thin film CuBO2 as a channel layer and thin film solar cells with CuBO2 p-layers. Solid state dye sensitized solar cells (SS-DSSC) comprising CuBO2 in various forms, including “core-shell” and “nano-couple” particles, and methods of manufacture, are also described.
    Type: Application
    Filed: December 21, 2009
    Publication date: July 15, 2010
    Applicant: APPLIED MATERIALS, INC.
    Inventors: Kaushal K. SINGH, Omkaram NALAMASU, Nety M. KRISHNA, Michael SNURE, Ashutosh TIWARI
  • Publication number: 20100018460
    Abstract: Embodiments of the invention generally provide a method for depositing films or layers using a UV source during a photoexcitation process. The films are deposited on a substrate and usually contain a material, such as silicon (e.g., epitaxy, crystalline, microcrystalline, polysilicon, or amorphous), silicon oxide, silicon nitride, silicon oxynitride, or other silicon-containing materials. The photoexcitation process may expose the substrate and/or gases to an energy beam or flux prior to, during, or subsequent a deposition process. Therefore, the photoexcitation process may be used to pre-treat or post-treat the substrate or material, to deposit the silicon-containing material, and to enhance chamber cleaning processes.
    Type: Application
    Filed: October 13, 2009
    Publication date: January 28, 2010
    Applicant: APPLIED MATERIALS, INC.
    Inventors: Kaushal K. Singh, Joseph M. Ranish
  • Patent number: 7651955
    Abstract: Embodiments of the invention generally provide a method for depositing films or layers using a UV source during a photoexcitation process. The films are deposited on a substrate and usually contain a material, such as silicon (e.g., epitaxy, crystalline, microcrystalline, polysilicon, or amorphous), silicon oxide, silicon nitride, silicon oxynitride, or other silicon-containing materials. The photoexcitation process may expose the substrate and/or gases to an energy beam or flux prior to, during, or subsequent a deposition process. Therefore, the photoexcitation process may be used to pre-treat or post-treat the substrate or material, to deposit the silicon-containing material, and to enhance chamber cleaning processes.
    Type: Grant
    Filed: June 20, 2006
    Date of Patent: January 26, 2010
    Assignee: Applied Materials, Inc.
    Inventors: Joseph M. Ranish, Kaushal K. Singh
  • Patent number: 7648927
    Abstract: Embodiments of the invention generally provide a method for depositing films or layers using a UV source during a photoexcitation process. The films are deposited on a substrate and usually contain a material, such as silicon (e.g., epitaxy, crystalline, microcrystalline, polysilicon, or amorphous), silicon oxide, silicon nitride, silicon oxynitride, or other silicon-containing materials. The photoexcitation process may expose the substrate and/or gases to an energy beam or flux prior to, during, or subsequent a deposition process. Therefore, the photoexcitation process may be used to pre-treat or post-treat the substrate or material, to deposit the silicon-containing material, and to enhance chamber cleaning processes.
    Type: Grant
    Filed: June 20, 2006
    Date of Patent: January 19, 2010
    Assignee: Applied Materials, Inc.
    Inventors: Kaushal K. Singh, Joseph M. Ranish
  • Patent number: 7645339
    Abstract: Embodiments of the invention relate to methods for depositing silicon-containing materials on a substrate. In one example, a method for selectively and epitaxially depositing a silicon-containing material is provided which includes positioning and heating a substrate containing a crystalline surface and a non-crystalline surface within a process chamber, exposing the substrate to a process gas containing neopentasilane, and depositing an epitaxial layer on the crystalline surface. In another example, a method for blanket depositing a silicon-containing material is provide which includes positioning and heating a substrate containing a crystalline surface and feature surfaces within a process chamber and exposing the substrate to a process gas containing neopentasilane and a carbon source to deposit a silicon carbide blanket layer across the crystalline surface and the feature surfaces.
    Type: Grant
    Filed: October 12, 2006
    Date of Patent: January 12, 2010
    Assignee: Applied Materials, Inc.
    Inventors: Kaushal K. Singh, Paul B. Comita, Lance A. Scudder, David K. Carlson
  • Publication number: 20090320819
    Abstract: A wire saw for cutting hard materials includes a carbon nanotube fiber wire spun from carbon nanotubes. The carbon nanotube fiber wire may be made from a plurality of fibers, each fiber being spun from carbon nanotubes, the fibers being twisted together to form the wire. Furthermore, the wire may also include diamond particles, silicon carbide particles and/or extra carbon nanotubes to enhance the abrasive properties of the wire. A method is provided for slicing a silicon boule including: linearly translating a carbon nanotube fiber wire between rotating drums while maintaining the wire under tension; using a fixture, moving the silicon boule onto the moving tensioned wire, whereby the wire cuts into the silicon; delivering lubricating fluid to the surface of the silicon where contact is made with the wire; and collecting the lubricating fluid after it leaves the surface of the silicon.
    Type: Application
    Filed: May 21, 2008
    Publication date: December 31, 2009
    Inventors: Robert Z. Bachrach, Kaushal K. Singh, Omkaram Nalamasu, John Christopher Moran
  • Patent number: 7601652
    Abstract: Embodiments of the invention generally provide a method for depositing films using photoexcitation. The photoexcitation may be utilized for at least one of treating the substrate prior to deposition, treating substrate and/or gases during deposition, treating a deposited film, or for enhancing chamber cleaning. In one embodiment, a method for depositing silicon and nitrogen-containing film on a substrate includes heating a substrate disposed in a processing chamber, generating a beam of energy of between about 1 to about 10 eV, transferring the energy to a surface of the substrate; flowing a nitrogen-containing chemical into the processing chamber, flowing a silicon-containing chemical with silicon-nitrogen bonds into the processing chamber, and depositing a silicon and nitrogen-containing film on the substrate.
    Type: Grant
    Filed: June 21, 2005
    Date of Patent: October 13, 2009
    Assignee: Applied Materials, Inc.
    Inventors: Kaushal K. Singh, Sean M. Seutter, Jacob Smith, R. Suryanarayanan Iyer, Steve G. Ghanayem, Adam Brailove, Robert Shydo, Jeannot Morin
  • Patent number: 7540920
    Abstract: Embodiments of the invention generally provide a composition of silicon compounds and methods for using the silicon compounds to deposit a silicon-containing film. The processes employ introducing the silicon compound to a substrate surface and depositing a portion of the silicon compound, the silicon motif, as the silicon-containing film. The ligands are another portion of the silicon compound and are liberated as an in-situ etchant. The in-situ etchants supports the growth of selective silicon epitaxy. Silicon compounds include SiRX6, Si2RX6, Si2RX8, wherein X is independently hydrogen or halogen and R is carbon, silicon or germanium. Silicon compound also include compounds comprising three silicon atoms, fourth atom of carbon, silicon or germanium and atoms of hydrogen or halogen with at least one halogen, as well as, comprising four silicon atoms, fifth atom of carbon, silicon or germanium and atoms of hydrogen or halogen with at least one halogen.
    Type: Grant
    Filed: October 17, 2003
    Date of Patent: June 2, 2009
    Assignee: Applied Materials, Inc.
    Inventors: Kaushal K. Singh, Paul B. Comita, Lance A. Scudder, David K. Carlson
  • Patent number: 7396743
    Abstract: A method of preparing a clean substrate surface for blanket or selective epitaxial deposition of silicon-containing and/or germanium-containing films. In addition, a method of growing the silicon-containing and/or germanium-containing films, where both the substrate cleaning method and the film growth method are carried out at a temperature below 750° C., and typically at a temperature from about 700° C. to about 500° C. The cleaning method and the film growth method employ the use of radiation having a wavelength ranging from about 310 nm to about 120 nm in the processing volume in which the silicon-containing film is grown. Use of this radiation in combination with particular partial pressure ranges for the reactive cleaning or film-forming component species enable the substrate cleaning and epitaxial film growth at temperatures below those previously known in the industry.
    Type: Grant
    Filed: June 10, 2004
    Date of Patent: July 8, 2008
    Inventors: Kaushal K. Singh, David Carlson, Manish Hemkar, Satheesh Kuppurao, Randhir Thakur
  • Publication number: 20080135914
    Abstract: In one embodiment, a method for forming a metallic nanocrystalline material on a substrate is provided which includes exposing a substrate to a pretreatment process, forming a tunnel dielectric layer on the substrate, exposing the substrate to a post-treatment process, forming a metallic nanocrystalline layer on the tunnel dielectric layer, and forming a dielectric capping layer on the metallic nanocrystalline layer. The method further provides forming the metallic nanocrystalline layer having a nanocrystalline density of at least about 5×1012 cm?2, preferably, at least about 8×1012 cm?2. In one example, the metallic nanocrystalline layer contains platinum, ruthenium, or nickel. In another embodiment, a method for forming a multi-layered metallic nanocrystalline material on a substrate is provided which includes forming a plurality of bi-layers, wherein each bi-layer contains an intermediate dielectric layer deposited on a metallic nanocrystalline layer.
    Type: Application
    Filed: June 29, 2007
    Publication date: June 12, 2008
    Inventors: Nety M. Krishna, Ralf Hofmann, Kaushal K. Singh, Karl J. Armstrong
  • Publication number: 20070259111
    Abstract: The invention generally provides a method for depositing materials, and more particularly, embodiments of the invention relate to chemical vapor deposition processes and atomic layer deposition processes utilizing photoexcitation techniques to deposit barrier layers, seed layers, conductive materials, and dielectric materials. Embodiments of the invention generally provide methods of the assisted processes and apparatuses, in which the assisted processes may be conducted for providing uniformly deposited material.
    Type: Application
    Filed: August 11, 2006
    Publication date: November 8, 2007
    Inventors: Kaushal K. Singh, Maitreyee Mahajani, Steve G. Ghanayem, Joseph Yudovsky, Brendan McDougall
  • Patent number: 7262116
    Abstract: A method of preparing a clean substrate surface for blanket or selective epitaxial deposition of silicon-containing and/or germanium-containing films. In addition, a method of growing the silicon-containing and/or germanium-containing films, where both the substrate cleaning method and the film growth method are carried out at a temperature below 750° C., and typically at a temperature from about 700° C. to about 500° C. The cleaning method and the film growth method employ the use of radiation having a wavelength ranging from about 310 nm to about 120 nm in the processing volume in which the silicon-containing film is grown. Use of this radiation in combination with particular partial pressure ranges for the reactive cleaning or film-forming component species enable the substrate cleaning and epitaxial film growth at temperatures below those previously known in the industry.
    Type: Grant
    Filed: April 10, 2006
    Date of Patent: August 28, 2007
    Assignee: Applied Materials, Inc.
    Inventors: Kaushal K. Singh, David Carlson, Manish Hemkar, Satheesh Kuppurao, Randhir Thakur
  • Publication number: 20040224089
    Abstract: Embodiments of the invention generally provide a composition of silicon compounds and methods for using the silicon compounds to deposit a silicon-containing film. The processes employ introducing the silicon compound to a substrate surface and depositing a portion of the silicon compound, the silicon motif, as the silicon-containing film. The ligands are another portion of the silicon compound and are liberated as an in-situ etchant. The in-situ etchants supports the growth of selective silicon epitaxy. Silicon compounds include SiRX6, Si2RX6, Si2RX8, wherein X is independently hydrogen or halogen and R is carbon, silicon or germanium. Silicon compound also include compounds comprising three silicon atoms, fourth atom of carbon, silicon or germanium and atoms of hydrogen or halogen with at least one halogen, as well as, comprising four silicon atoms, fifth atom of carbon, silicon or germanium and atoms of hydrogen or halogen with at least one halogen.
    Type: Application
    Filed: October 17, 2003
    Publication date: November 11, 2004
    Applicant: APPLIED MATERIALS, INC.
    Inventors: Kaushal K. Singh, Paul B. Comita, Lance A. Scudder, David K. Carlson
  • Patent number: 6617178
    Abstract: A method is provided for ferroelectric layer testing. An adhesion layer is deposited over a semiconductor substrate to be of a phase pure material lacking a first material. A lower electrode is deposited over the adhesion layer and a ferroelectric layer is deposited over the lower electrode. The ferroelectic layer contains the first material. The ferroelectric layer is x-rayed and the x-ray fluorescence from the ferroelectric layer is detected for characterizing the ferroelectric layer.
    Type: Grant
    Filed: July 2, 2002
    Date of Patent: September 9, 2003
    Assignees: Agilent Technologies, Inc, Texas Instruments, Applied Materials
    Inventors: Sanjeev Aggarwal, Kaushal K. Singh
  • Patent number: 6190233
    Abstract: A method and an apparatus for depositing a dielectric layer to fill in a gap between adjacent metal lines. In preferred embodiments of the method, a first dielectric layer is deposited over the lines and subsequently etched using both chemical and physical etchback steps. After the etchback steps are completed, a second dielectric layer is deposited over the first dielectric layer to fill in the gap.
    Type: Grant
    Filed: February 19, 1998
    Date of Patent: February 20, 2001
    Assignee: Applied Materials, Inc.
    Inventors: Soonil Hong, Choon Kun Ryu, Michael P. Nault, Kaushal K. Singh, Anthony Lam, Virendra V. S. Rana, Andrew Conners
  • Patent number: 5990000
    Abstract: A method and an apparatus for depositing a dielectric layer to fill in a gap between adjacent metal lines. In preferred embodiments of the method, a first dielectric layer is deposited over the lines and subsequently etched using both chemical and physical etchback steps. After the etchback steps are completed, a second dielectric layer is deposited over the first dielectric layer to fill in the gap.
    Type: Grant
    Filed: February 20, 1997
    Date of Patent: November 23, 1999
    Assignee: Applied Materials, Inc.
    Inventors: Soonil Hong, Choon Kun Ryu, Michael P. Nault, Kaushal K. Singh, Anthony Lam, Virendra V. S. Rana, Andrew Conners