Abstract: Recesses are formed on one surface of a substrate. A conductive film covers an inner surface of each of the recesses. This conductive film contacts a bump of a semiconductor device to be inspected and is electrically connected to the bump. It is therefore possible to prevent damages of the bump to be caused by contact of a probe pin.

Abstract: The invention relates to a semiconductor device, a method for manufacturing a semiconductor device and an electronic thermoelectric power generation device, a semiconductor device having a thermoelectric conversion element that is embedded in a semiconductor chip so as to be integrated with a semiconductor circuit can be implemented. A semiconductor substrate is provided with a through opening for a region in which a thermoelectric conversion element is to be formed, and a thermoelectric conversion element is embedded in the through opening, where the thermoelectric conversion element includes: a number of penetrating rods made of a thermoelectric conversion material; and an insulating reinforcement layer in which the penetrating rods are embedded and of which the thermal conductivity is lower than that of the thermoelectric conversion material.

Abstract: An electric potential measuring apparatus includes a detecting unit, a generating unit, and a measuring unit. The detecting unit is provided on a surface of a measurement subject and detects a second signal including a first signal within a first frequency range from the measurement subject. The generating unit generates a fourth signal by averaging a third signal within a second frequency range outside the first frequency range. The measuring unit measures electric potential of the first signal included in the second signal detected by the detecting unit with reference to electric potential of the fourth signal generated by the generating unit.

Abstract: A thermoelectric conversion device includes a stack in which a first perovskite dielectric film, which includes Sr and Ti and has a first bandgap, and a second perovskite dielectric film, which includes Sr and Ti and has a second bandgap smaller than the first bandgap, are stacked alternately, each of the first and second perovskite dielectric films being doped to have an electric conductivity, the first and the second perovskite dielectric films having respective compositions such that there appears a bandoffset of 0.54 eV in maximum between a conduction band of the first perovskite dielectric film and a conduction band of the second perovskite dielectric film.

Abstract: A thermoelectric generator includes a perovskite dielectric substrate containing Sr and Ti and having electric conductivity by being doped to n-type; an energy filter formed on a top surface of the perovskite dielectric substrate, the energy filter including a first perovskite dielectric film, which contains Sr and Ti, has electric conductivity by being doped to n-type, and has a conduction band at an energy level higher than that of the perovskite dielectric substrate; a first electrode formed in electrical contact with a bottom surface of the perovskite dielectric substrate; and a second electrode formed in electrical contact with a top surface of the energy filter. The thermoelectric generator produces a voltage between the first and second electrodes by the top surface of the energy filter being exposed to a first temperature and the bottom surface of the perovskite dielectric substrate being exposed to a second temperature.

Abstract: A thermoelectric conversion module includes: a first substrate having water permeability and thermal conductivity; a thermoelectric conversion element provided on the first substrate; a heat insulator having water permeability provided around the thermoelectric conversion element on the first substrate; and a second substrate disposed on the thermoelectric conversion element and the heat insulator and having water permeability and thermal conductivity.

Abstract: A thermoelectric conversion element includes a film composed of a conductive oxide, a first electrode disposed on one end of the film composed of the conductive oxide, and a second electrode disposed on another end of the film composed of the conductive oxide, wherein the conductive oxide has a tetragonal crystal structure expressed by ABO3-x, where 0.1<x<1, wherein the conductive oxide has a band structure in which a Fermi level intersects seven bands between a ? point and an R point, and wherein the first electrode and the second electrode are disposed on the film composed of the conductive oxide so that electrical charge moves in a direction of a smallest vector among three primitive translation vectors of the crystal structure.

Abstract: The invention relates to a semiconductor device, a method for manufacturing a semiconductor device and an electronic thermoelectric power generation device, a semiconductor device having a thermoelectric conversion element that is embedded in a semiconductor chip so as to be integrated with a semiconductor circuit can be implemented. A semiconductor substrate is provided with a through opening for a region in which a thermoelectric conversion element is to be formed, and a thermoelectric conversion element is embedded in the through opening, where the thermoelectric conversion element includes: a number of penetrating rods made of a thermoelectric conversion material; and an insulating reinforcement layer in which the penetrating rods are embedded and of which the thermal conductivity is lower than that of the thermoelectric conversion material.

Abstract: A centrifugal compressor (1) that includes: an auxiliary bearing (7) which supports a shaft (2), which is supported by a magnetic bearing (6), when the shaft (2) is displaced from a reference position; and a stopper (8) that is provided only for a first auxiliary bearing (7a) among the first auxiliary bearing (7a) and a second auxiliary bearing (7b), that is fixed to the shaft (2), and that restricts a movement of the shaft (2) in both directions in an axial direction by the stopper (8) being brought into contact with the first auxiliary bearing (7a).

Abstract: A turbo compressor that has a compression stage provided with an impeller that rotates; a housing provided with a gear unit accommodation space that accommodates lubricating oil and accommodates a large diameter gear that transmits rotating force to the impeller, an IGV accommodation space in which the ambient pressure is lower than the gear unit accommodation space, and a gap that brings the IGV accommodation space and the air intake side of a first compression stage into communication; a pressure equalizing tube that causes a gas to circulate from the gear unit accommodation space toward the IGV accommodation space; and a second oil separating device that separates, in the IGV accommodation space, the lubricating oil contained in the gas.

Abstract: A thermoelectric conversion device includes a stack in which a first perovskite dielectric film, which includes Sr and Ti and has a first bandgap, and a second perovskite dielectric film, which includes Sr and Ti and has a second bandgap smaller than the first bandgap, are stacked alternately, each of the first and second perovskite dielectric films being doped to have an electric conductivity, the first and the second perovskite dielectric films having respective compositions such that there appears a bandoffset of 0.54 eV in maximum between a conduction band of the first perovskite dielectric film and a conduction band of the second perovskite dielectric film.

Abstract: P-type semiconductor sheets and n-type semiconductor sheets formed by mixing a powder of semiconductor material, a binder resin, a plasticizer, and a surfactant are prepared. In addition, separator sheets formed by mixing a resin such as PMMA and a plasticizer are prepared. Through holes are formed in each of the separator sheets and then filled with a conductive material. Thereafter, the p-type semiconductor sheet, the separator sheet, the n-type semiconductor sheet and the separator sheet are stacked. The resultant laminated body is cut into a predetermined size and then subjected to a baking process.

Abstract: Provided is a casing structure including: an annular seal member which is disposed at a connection portion between first and second casings to keep air-tightness between an internal space formed by connecting the first and second casings to each other and an outside of the internal space; a first screw member which is threaded from the internal space, is disposed at the inside of the seal member in the radial direction, and fastens the first and second casings to each other; and a second screw member which is threaded from the outside, is disposed at the outside of the seal member in the radial direction, and fastens the first and second casings to each other.

Abstract: A thermoelectric conversion device includes a perovskite film over a substrate and formed with first and second electrodes on the perovskite film, wherein the perovskite film includes a domain having a crystal orientation different from a crystal orientation of a crystal that constitutes the perovskite film.

Abstract: A power generator includes layered-polymer piezoelectric element that is arranged on an object to be a heat source and a vibration source, and that generates electric power according to vibration transmitted from the object; a first heat conductor containing a flexible material that is arranged on the object, and that conducts heat from the object. The power generator includes a second heat conductor that is arranged on the first heat conductor and the layered-polymer piezoelectric element, and that conducts heat from the first heat conductor. Furthermore, the power generator includes a thermoelectric element that is arranged on the second heat conductor so as to be layered on the second heat conductor on the layered-polymer piezoelectric element, and that generates electric power according to inner temperature difference between temperature on a heat absorbing side obtained by the second heat conductor and temperature on a heat releasing side.

Abstract: A method of manufacturing a rotor assembly in which a first impeller and a second impeller are fixed to a rotation shaft which is supported by a bearing so as to be rotatable, the method including: fixing the second impeller to the rotation shaft; fitting and fixing a sleeve to the rotation shaft after fixing the second impeller; fitting and fixing the bearing to the sleeve after fitting and fixing the sleeve; and fixing the first impeller after fitting and fixing the bearing.

Abstract: A superconductive filter includes a superconductive filter substrate having a dielectric substrate and a plurality of resonator patterns formed on a surface of the dielectric substrate, the plurality of resonator patterns including a superconductive material; a package accommodating the superconductive filter substrate; and an intermediate substrate disposed between an inner surface of the package and the superconductive filter substrate, and thermally coupling the package and the superconductive filter substrate wherein a difference between a degree of contraction of the intermediate substrate and the degree of contraction of the dielectric substrate is smaller than a difference between the degree of contraction of the dielectric substrate and the degree of contraction of the package, when the package, the intermediate substrate, and the dielectric substrate are cooled from room temperature to a critical temperature of the resonator patterns.

Abstract: A turbo compressor includes an impeller fixed to one end portion of a rotation shaft by a predetermined fastening member, and a regulating portion which is used to regulate rotation of the rotation shaft during fastening of the fastening member and is provided in the other end portion of the rotation shaft. The regulating portion is formed as a recessed portion recessed from an end surface of the other end portion of the rotation shaft.

Abstract: A filter includes a dielectric substrate; an electrode layer continuously formed covering a first side of the dielectric substrate; a disk-shaped electrode pattern provided on a second side of the dielectric substrate, the disk-shaped electrode pattern and the electrode layer holding the dielectric substrate therebetween; a ground slot having an opening that is formed asymmetrically with respect to the center of a circular area included in the electrode layer and exposes the dielectric substrate, the circular area and the disk-shaped electrode pattern holding the dielectric substrate therebetween.

Abstract: An electric power generation device equipped with an apparatus which vibrates and generates heat includes a thermoelectric power generation module and a piezoelectric power generation module which are formed integrally. The thermoelectric power generation module has a first surface combining thermally and mechanically with the apparatus's outer surface and a second surface opposite to the first surface, and generates electric power from temperature differences between the first surface and the second surface caused by the apparatus's generating heat. The piezoelectric power generation module has a fixed end combining mechanically with the apparatus's outer surface and a movable end opposite to the fixed end, and generates electric power from displacement of the movable end to the fixed end caused by the apparatus's vibrating.