Abstract: Provided is an exhaust gas purification catalyst of OSC material-containing type that allows a favorable HC purification (oxidation) treatment to be performed even in a case where HC emissions are comparatively large, such as during engine startup. The exhaust gas purification catalyst of the present invention includes, as a catalyst layer (20), a front section (24) positioned upstream in an exhaust gas flow direction, and a rear section (26) positioned downstream of the front section in the exhaust gas flow direction. The front section contains Pd as a catalyst metal but does not contain an OSC material. The proportion, at which the front section is formed from the upstream leading end in the exhaust gas flow direction, is 10% to 40% with respect to 100% of a total length of the substrate (1) in the exhaust gas flow direction.

Abstract: There is provided a coil component including a coil portion that has at least one layer of planar coil including a coil-wound portion and an insulative layer which covers the periphery of the coil-wound portion, a covering portion that covers the coil portion and is constituted of a mixture including magnetic fillers and resin, and a conductor post that is penetratingly provided inside the covering portion and extends from the coil-wound portion to an upper surface of the covering portion along an axial direction of the planar coil. The conductor post has a post portion which extends from the coil-wound portion in the axial direction of the planar coil, and a lid portion which is exposed from the covering portion and extends from an end portion of the post portion on the upper surface side along a surface direction of the upper surface.

Abstract: The present invention provides a vehicle-mounted imaging device that can notify a user of contamination, at a facility, a home or the vicinity thereof in which the user tends to easily eliminate the contamination on a lens or a protective glass of the lens of a camera.

Abstract: Provided is a method of manufacturing a semiconductor device which includes, in the following order: a first step of preparing a semiconductor element which includes a pn junction exposure portion; a second step of forming an insulation layer such that the insulation layer covers the pn junction exposure portion; and a third step of forming a glass layer on the insulation layer where a layer made of glass composition for protecting a semiconductor junction is formed on the insulation layer and, thereafter, the layer made of glass composition for protecting a semiconductor junction is baked.

Abstract: Provided is a glass composition for protecting a semiconductor junction which contains at least SiO2, B2O3, Al2O3, ZnO and at least two oxides of alkaline earth metals selected from a group consisting of CaO, MgO and BaO, and substantially contains none of Pb, As, Sb, Li, Na and K, wherein an average linear expansion coefficient within a temperature range of 50° C. to 550° C. falls within a range of 3.33×10?6 to 4.13×10?6. A semiconductor device having high breakdown strength can be manufactured using such a glass material containing no lead in the same manner as a conventional case where “a glass material containing lead silicate as a main component” is used.

Abstract: A resin-sealed semiconductor device 10 of the present invention includes: a mesa-type semiconductor element 100 which includes a mesa-type semiconductor base body having a pn-junction exposure portion in an outer peripheral tapered region which surrounds a mesa region, and a glass layer which covers at least the outer peripheral tapered region; and a molding resin 40 which seals the mesa-type semiconductor element 100, wherein the mesa-type semiconductor element 100 includes a glass layer which substantially contains no Pb as the glass layer. The resin-sealed semiconductor device of the present invention can acquire higher resistance to a reverse bias at a high temperature than a conventional resin-sealed semiconductor device, although the resin-sealed semiconductor device of the present invention has the structure where the mesa-type semiconductor element is molded with a resin in the same manner as the conventional resin-sealed semiconductor device.

Abstract: A first AR analyzer (3A) analyzes a first captured image including an AR marker image captured by a camera (1), determines the appearance of the AR marker image in the field of view in the first captured image, and virtually places a corresponding CG at an appropriate position in the field of view corresponding to the AR marker image; a second AR analyzer (3B) calculates appearance of the CG object in another field of view of the camera in a second captured image subsequently captured by the camera; a CG rendering unit (5) composites an image of the CG object at an appropriate position in the second captured image corresponding to the appropriate appearance; and a display unit (7) displays the composite image, so that the apparatus can composite and display a CG object in real time on a digital image of a natural landscape captured by a camera.

Abstract: A method for outputting a usage history of a system that includes resources having virtual machines, storage devices, networks, and a backup device, and that includes a storage device storing first usage history information, the method includes designating a usage combination of the resources, specifying clients who use the resources of the system in a combination similar to the usage combination within a range of a threshold, extracting the first usage history information corresponding to each of the clients from the storage device, categorizing one or more clients, among the clients, having similar time-series changes in the first usage history information into an identical group based on a similarity between the time-series changes in the first usage history information of the clients, and outputting second usage history information indicating a time-series change of the first usage history information.

Abstract: A resin-sealed semiconductor device includes a mesa-type semiconductor element which includes a mesa-type semiconductor base body having a pn junction exposure portion in an outer peripheral tapered region surrounding a mesa region, and a glass layer which covers at least the outer peripheral tapered region; and a molding resin which seals the mesa-type semiconductor element, wherein the glass layer is formed by forming a layer made of a predetermined glass composition for protecting a semiconductor junction which substantially contains no Pb such that the layer covers the outer peripheral tapered region and, subsequently, by baking the layer made of the glass composition for protecting a semiconductor junction.

Abstract: Provided is a glass composition for protecting a semiconductor junction which contains at least SiC2, B2O3, Al2O3, ZnO and at least two oxides of alkaline earth metals selected from a group consisting of CaO, MgO and BaO, and substantially contains none of Pb, As, Sb, Li, Na and K, wherein an average linear expansion coefficient within a temperature range of 50° C. to 550° C. falls within a range of 3.33×10?6 to 4.13×10?6. A semiconductor device having high breakdown strength can be manufactured using such a glass material containing no lead in the same manner as a conventional case where “a glass material containing lead silicate as a main component” is used.

Abstract: Provided is a glass composition for protecting a semiconductor junction which contains at least SiO2, B2O3, Al2O3, ZnO and at least two oxides of alkaline earth metals selected from a group consisting of CaO, MgO and BaO, and substantially contains none of Pb, As, Sb, Li, Na and K, wherein an average linear expansion coefficient within a temperature range of 50° C. to 550° C. falls within a range of 3.33×10?6 to 4.13×10?6. A semiconductor device having high breakdown strength can be manufactured using such a glass material containing no lead in the same manner as a conventional case where “a glass material containing lead silicate as a main component” is used.

Abstract: Provided is a glass composition for protecting a semiconductor junction which contains at least SiO2, Al2O3, ZnO, CaO and 3 mol % to 10 mol % of B2O3, and substantially contains none of Pb, P, As, Sb, Li, Na and K. It is preferable that a content of SiO2 falls within a range of 32 mol % to 48 mol %, a content of Al2O3 falls within a range of 9 mol % to 13 mol %, a content of ZnO falls within a range of 18 mol % to 28 mol %, a content of CaO falls within a range of 15 mol % to 23 mol %, and a content of B2O3 falls within a range of 3 mol % to 10 mol %.

Abstract: A glass composition for protecting a semiconductor junction contains at least SiO2, B2O3, Al2O3, ZnO, and at least two oxides of alkaline earth metal selected from the group consisting of CaO, MgO and BaO, and substantially contains none of Pb, P, As, Sb, Li, Na and K.

Abstract: A glass composition for protecting a semiconductor junction contains at least SiO2, Al2O3, MO, and nickel oxide, and substantially contains none of Pb, P, As, Sb, Li, Na and K (M in MO indicates one of alkali earth metals).

Abstract: A first AR analyzer (3A) analyzes a first captured image including an AR marker image captured by a camera (1), determines the appearance of the AR marker image in the field of view in the first captured image, and virtually places a corresponding CG at an appropriate position in the field of view corresponding to the AR marker image; a second AR analyzer (3B) calculates appearance of the CG object in another field of view of the camera in a second captured image subsequently captured by the camera; a CG rendering unit (5) composites an image of the CG object at an appropriate position in the second captured image corresponding to the appropriate appearance; and a display unit (7) displays the composite image, so that the apparatus can composite and display a CG object in real time on a digital image of a natural landscape captured by a camera.

Abstract: A resin-sealed semiconductor device includes a mesa-type semiconductor element which includes a mesa-type semiconductor base body having a pn junction exposure portion in an outer peripheral tapered region surrounding a mesa region, and a glass layer which covers at least the outer peripheral tapered region; and a molding resin which seals the mesa-type semiconductor element, wherein the glass layer is formed by forming a layer made of a predetermined glass composition for protecting a semiconductor junction which substantially contains no Pb such that the layer covers the outer peripheral tapered region and, subsequently, by baking the layer made of the glass composition for protecting a semiconductor junction.

Abstract: A resin-sealed semiconductor device 10 of the present invention includes: a mesa-type semiconductor element 100 which includes a mesa-type semiconductor base body having a pn-junction exposure portion in an outer peripheral tapered region which surrounds a mesa region, and a glass layer which covers at least the outer peripheral tapered region; and a molding resin 40 which seals the mesa-type semiconductor element 100, wherein the mesa-type semiconductor element 100 includes a glass layer which substantially contains no Pb as the glass layer. The resin-sealed semiconductor device of the present invention can acquire higher resistance to a reverse bias at a high temperature than a conventional resin-sealed semiconductor device, although the resin-sealed semiconductor device of the present invention has the structure where the mesa-type semiconductor element is molded with a resin in the same manner as the conventional resin-sealed semiconductor device.

Abstract: Provided is a glass composition for protecting a semiconductor junction which contains at least SiO2, B2O3, Al2O3, ZnO and at least two oxides of alkaline earth metals selected from a group consisting of CaO, MgO and BaO, and substantially contains none of Pb, As, Sb, Li, Na and K, wherein an average linear expansion coefficient within a temperature range of 50° C. to 550° C. falls within a range of 3.33×10?6 to 4.13×10?6. A semiconductor device having high breakdown strength can be manufactured using such a glass material containing no lead in the same manner as a conventional case where “a glass material containing lead silicate as a main component” is used.