Patents by Inventor Kazuhiko Sugiura
Kazuhiko Sugiura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20150079781Abstract: In a manufacturing method of a silicon carbide semiconductor device, a semiconductor substrate made of single crystal silicon carbide is prepared. At a portion of the semiconductor substrate where a first electrode is to be formed, a metal thin film made of electrode material including an impurity is formed. After the metal thin film is formed, the first electrode including a metal reaction layer in which the impurity is introduced is formed by irradiating the metal thin film with a laser light.Type: ApplicationFiled: November 19, 2014Publication date: March 19, 2015Inventors: Jun KAWAI, Norihito TOKURA, Kazuhiko SUGIURA
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Patent number: 8941122Abstract: In a manufacturing method of a silicon carbide semiconductor device, a semiconductor substrate made of single crystal silicon carbide is prepared. At a portion of the semiconductor substrate where a first electrode is to be formed, a metal thin film made of electrode material including an impurity is formed. After the metal thin film is formed, the first electrode including a metal reaction layer in which the impurity is introduced is formed by irradiating the metal thin film with a laser light.Type: GrantFiled: April 2, 2013Date of Patent: January 27, 2015Assignee: DENSO CORPORATIONInventors: Jun Kawai, Norihito Tokura, Kazuhiko Sugiura
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Publication number: 20140299886Abstract: A silicon carbide semiconductor device includes: a semiconductor substrate made of silicon carbide single crystal and having a principal surface and a backside; and an ohmic electrode contacting one of the principal surface and the backside of the semiconductor substrate in an ohmic manner. A boundary between the ohmic electrode and the one of the principal surface and the backside of the semiconductor substrate is terminated with an element, which has a Pauling electronegativity larger than silicon and a binding energy with silicon larger than a binding energy of Si—H.Type: ApplicationFiled: March 5, 2014Publication date: October 9, 2014Applicant: DENSO CORPORATIONInventors: Jun KAWAI, Kazuhiko SUGIURA
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Patent number: 8785231Abstract: A semiconductor device includes a sensor portion, a cap portion, and an ion-implanted layer. The sensor portion has a sensor structure at a surface portion of a surface. The cap portion has first and second surfaces opposite to each other and includes a through electrode. The surface of the sensor portion is joined to the first surface of the cap portion such that the sensor structure is sealed between the sensor portion and the cap portion. The ion-implanted layer is located on the second surface of the cap portion. The through electrode extends from the first surface to the second surface and is exposed through the ion-implanted layer.Type: GrantFiled: January 24, 2013Date of Patent: July 22, 2014Assignee: DENSO CORPORATIONInventors: Kazuhiko Sugiura, Tetsuo Fujii, Hisanori Yokura
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Patent number: 8728923Abstract: A manufacturing method of a semiconductor device having an ohmic electrode is disclosed. The manufacturing method includes: forming a metal thin film on a rear surface of a semiconductor substrate; forming an ohmic electrode by laser annealing by irradiating the metal thin film with laser beam; and dicing the semiconductor substrate into chips by cutting at a dicing region of the semiconductor substrate. In forming the ohmic electrode, laser irradiation of the metal thin film is performed on a chip-by-chip basis while the dicing region is not being irradiated with the laser beam.Type: GrantFiled: September 25, 2012Date of Patent: May 20, 2014Assignee: DENSO CORPORATIONInventors: Jun Kawai, Tetsuji Kondou, Kazuhiko Sugiura, Nobuyuki Kato
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Patent number: 8726268Abstract: A computer-readable medium causes an information processing apparatus capable of performing a plurality of setting processing for making a setting in accordance with a predetermined sequence to perform processing including a first display control process including displaying a corresponding setting image for each of the plurality of setting processing, an information acceptance process including accepting information required to perform the setting processing through the displayed setting image, a shift command acceptance process including accepting a shift command for making a shift toward another setting processing from setting processing corresponding to the setting image displayed in the first display control process, and a second display control process including displaying an input completion image showing information accepted in the information acceptance process in addition to the setting image corresponding to the setting processing to be shifted by the shift command when the shift command is accepteType: GrantFiled: January 29, 2009Date of Patent: May 13, 2014Assignee: Brother Kogyo Kabushiki KaishaInventor: Kazuhiko Sugiura
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Publication number: 20130285070Abstract: In a manufacturing method of a silicon carbide semiconductor device, a semiconductor substrate made of single crystal silicon carbide is prepared. At a portion of the semiconductor substrate where a first electrode is to be formed, a metal thin film made of electrode material including an impurity is formed. After the metal thin film is formed, the first electrode including a metal reaction layer in which the impurity is introduced is formed by irradiating the metal thin film with a laser light.Type: ApplicationFiled: April 2, 2013Publication date: October 31, 2013Inventors: Jun KAWAI, Norihito TOKURA, Kazuhiko SUGIURA
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Patent number: 8356259Abstract: The present invention provides an information processing apparatus capable of improving the operability of an installation screen. The information processing apparatus of the present invention starts up an application on an operating system to perform information processing. This information processing apparatus includes: installation means for installing the application; display means for displaying, when the application is installed, an installation screen on which a plurality of buttons, each associated with each of a plurality of setting items and operated by a user, are arranged; detection means for detecting a use environment of the information processing apparatus; and display control means for allowing, among the buttons arranged on the installation screen, the button relevant to the use environment detected by the detection means to be displayed on the display means so as to be relatively increased in display level with respect to the other buttons.Type: GrantFiled: January 30, 2009Date of Patent: January 15, 2013Assignee: Brother Kogyo Kabushiki KaishaInventor: Kazuhiko Sugiura
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Patent number: 8349634Abstract: A semiconductor device includes: a first substrate made of semiconductor and having first regions, which are insulated from each other and disposed in the first substrate; and a second substrate having electric conductivity and having second regions and insulation trenches. Each insulation trench penetrates the second substrate so that the second regions are insulated from each other. The first substrate provides a base substrate, and the second substrate provides a cap substrate. The second substrate is bonded to the first substrate so that a sealed space is provided between a predetermined surface region of the first substrate and the second substrate. The second regions include an extraction conductive region, which is coupled with a corresponding first region.Type: GrantFiled: June 29, 2010Date of Patent: January 8, 2013Assignee: DENSO CORPORATIONInventors: Tetsuo Fujii, Kazuhiko Sugiura
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Patent number: 8269290Abstract: In a semiconductor device, a first semiconductor substrate includes a first element on a first-surface side thereof, and a second semiconductor substrate includes a second element and a wiring part on a first-surface side thereof. The first semiconductor substrate and the second semiconductor substrate are attached with each other in such a manner that a first surface of the first semiconductor substrate is opposite a first surface of the second semiconductor substrate. A hole is provided from a second surface of the first semiconductor substrate to the wiring part through the first semiconductor substrate, and a sidewall of the hole is insulated. A drawing wiring part made of a conductive member fills the hole.Type: GrantFiled: August 31, 2009Date of Patent: September 18, 2012Assignee: DENSO CORPORATIONInventor: Kazuhiko Sugiura
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Patent number: 8264051Abstract: A semiconductor device includes: a sensor element having a plate shape with a surface and including a sensor structure disposed in a surface portion of the sensor element; and a plate-shaped cap element bonded to the surface of the sensor element. The cap element has a wiring pattern portion facing the sensor element. The wiring pattern portion connects an outer periphery of the surface of the sensor element and the sensor structure so that the sensor structure is electrically coupled with an external element via the outer periphery. The sensor element does not have a complicated multi-layered structure, so that the sensor element is simplified. Further, the dimensions of the device are reduced.Type: GrantFiled: February 28, 2011Date of Patent: September 11, 2012Assignee: DENSO CORPORATIONInventors: Tetsuo Fujii, Kazuhiko Sugiura
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Patent number: 8146426Abstract: A physical sensor includes: a substrate having a silicon layer, an oxide film and a support layer; and a sensor portion having movable and fixed electrodes and a lower electrode. The movable electrode is supported by a beam on the support layer. The fixed electrode faces the movable electrode. The lower electrode is disposed on the support layer and faces the movable electrode. The physical sensor detects horizontal physical quantity based on a capacitance between the movable and fixed electrodes, and vertical physical quantity based on a capacitance between the movable and lower electrodes. The beam includes vertical and horizontal beams. The thickness of the vertical beam is smaller than the thickness of the horizontal beam.Type: GrantFiled: December 23, 2008Date of Patent: April 3, 2012Assignee: DENSO CORPORATIONInventors: Kazuhiko Sugiura, Yoshihiko Isobe
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Patent number: 8004728Abstract: An image scanning device has a scanning unit, a first storage unit, a first determination unit, and a control unit. The scanning unit scans an original document to produce image data. The first storage unit stores a specific condition used by the scanning unit for scanning a specific document. The specific document requires a limited scanning condition. The first determination unit determines based on the image data whether the original document is the specific document. The control unit reads the specific condition from the first storage unit and causes the scanning unit to scan the original document with the specific condition if the first determination unit determines that the original document is the specific document.Type: GrantFiled: November 29, 2007Date of Patent: August 23, 2011Assignee: Brother Kogyo Kabushiki KaishaInventor: Kazuhiko Sugiura
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Patent number: 7968958Abstract: A semiconductor device includes: a sensor element having a plate shape with a surface and including a sensor structure disposed in a surface portion of the sensor element; and a plate-shaped cap element bonded to the surface of the sensor element. The cap element has a wiring pattern portion facing the sensor element. The wiring pattern portion connects an outer periphery of the surface of the sensor element and the sensor structure so that the sensor structure is electrically coupled with an external element via the outer periphery. The sensor element does not have a complicated multi-layered structure, so that the sensor element is simplified. Further, the dimensions of the device are reduced.Type: GrantFiled: June 24, 2008Date of Patent: June 28, 2011Assignee: DENSO CORPORATIONInventors: Tetsuo Fujii, Kazuhiko Sugiura
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Publication number: 20110147863Abstract: A semiconductor device includes: a sensor element having a plate shape with a surface and including a sensor structure disposed in a surface portion of the sensor element; and a plate-shaped cap element bonded to the surface of the sensor element. The cap element has a wiring pattern portion facing the sensor element. The wiring pattern portion connects an outer periphery of the surface of the sensor element and the sensor structure so that the sensor structure is electrically coupled with an external element via the outer periphery. The sensor element does not have a complicated multi-layered structure, so that the sensor element is simplified. Further, the dimensions of the device are reduced.Type: ApplicationFiled: February 28, 2011Publication date: June 23, 2011Applicant: DENSO CORPORATIONInventors: Tetsuo FUJII, Kazuhiko Sugiura
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Patent number: 7901967Abstract: A method for dicing a semiconductor substrate includes: forming a reforming layer in the substrate by irradiating a laser beam on the substrate; forming a groove on the substrate along with a cutting line; and applying a force to the substrate in order to cutting the substrate at the reforming layer as a starting point of cutting. The groove has a predetermined depth so that the groove is disposed near the reforming layer, and the force provides a stress at the groove.Type: GrantFiled: November 16, 2006Date of Patent: March 8, 2011Assignee: DENSO CORPORATIONInventors: Atsushi Komura, Muneo Tamura, Kazuhiko Sugiura, Hirotsugu Funato, Yumi Maruyama, Tetsuo Fujii, Kenji Kohno
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Patent number: 7859091Abstract: A semiconductor device includes: a first substrate made of semiconductor and having first regions, which are insulated from each other and disposed in the first substrate; and a second substrate having electric conductivity and having second regions and insulation trenches. Each insulation trench penetrates the second substrate so that the second regions are insulated from each other. The first substrate provides a base substrate, and the second substrate provides a cap substrate. The second substrate is bonded to the first substrate so that a sealed space is provided between a predetermined surface region of the first substrate and the second substrate. The second regions include an extraction conductive region, which is coupled with a corresponding first region.Type: GrantFiled: February 12, 2008Date of Patent: December 28, 2010Assignee: Denso CorporationInventors: Tetsuo Fujii, Kazuhiko Sugiura
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Publication number: 20100270630Abstract: A semiconductor device includes: a first substrate made of semiconductor and having first regions, which are insulated from each other and disposed in the first substrate; and a second substrate having electric conductivity and having second regions and insulation trenches. Each insulation trench penetrates the second substrate so that the second regions are insulated from each other. The first substrate provides a base substrate, and the second substrate provides a cap substrate. The second substrate is bonded to the first substrate so that a sealed space is provided between a predetermined surface region of the first substrate and the second substrate. The second regions include an extraction conductive region, which is coupled with a corresponding first region.Type: ApplicationFiled: June 29, 2010Publication date: October 28, 2010Applicant: DENSO CORPORATIONInventors: Tetsuo FUJII, Kazuhiko SUGIURA
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Patent number: 7821085Abstract: A physical quantity sensor includes: a sensor substrate including a first support substrate, a first insulation film and a first semiconductor layer, which are stacked in this order; a cap substrate including a second support substrate disposed on the first semiconductor layer, and has a P conductive type; and multiple electrodes, which are separated from each other. The first support substrate, the first insulation film and the first semiconductor layer have the P conductive type. The physical quantity is detected based on a capacitance between the plurality of electrodes, and the electrodes are disposed in the first semiconductor layer.Type: GrantFiled: April 21, 2009Date of Patent: October 26, 2010Assignee: Denso CorporationInventors: Shigenori Suzuki, Hisanori Yokura, Kenichi Yokoyama, Tetsuo Fujii, Kazuhiko Sugiura
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Publication number: 20100155865Abstract: A semiconductor device includes a sensor portion, a cap portion, and an ion-implanted layer. The sensor portion has a sensor structure at a surface portion of a surface. The cap portion has first and second surfaces opposite to each other and includes a through electrode. The surface of the sensor portion is joined to the first surface of the cap portion such that the sensor structure is sealed between the sensor portion and the cap portion. The ion-implanted layer is located on the second surface of the cap portion. The through electrode extends from the first surface to the second surface and is exposed through the ion-implanted layer.Type: ApplicationFiled: December 8, 2009Publication date: June 24, 2010Applicant: DENSO CORPORATIONInventors: Kazuhiko Sugiura, Tetsuo Fujii, Hisanori Yokura