Abstract: A method for manufacturing a semiconductor device having a movable portion includes the steps of: forming a trench on a semiconductor layer so that the trench reaches an insulation layer; and forming a movable portion by etching a sidewall of the trench so that the semiconductor layer is separated from the insulation layer. The steps of forming the trench and forming the movable portion are performed by a reactive ion etching method. The insulation layer disposed on the bottom of the trench is prevented from charging positively in the step of forming the trench. The insulation layer disposed on the bottom of the trench is charged positively in the step of forming the movable portion.

Abstract: A semiconductor device having a membrane includes a semiconductor substrate, which has an active surface, and a membrane. A cavity is located between the active surface and the membrane and hermetically sealed. The membrane includes a first film, which has a through hole that extends through the first film, and a second film, which has been formed by reflowing a reflow layer made of a material that becomes viscous and reflows when heated. The through hole has been plugged by the second film.

Abstract: A semiconductor wafer includes: a first layer having a first refraction index; a second layer having a second refraction index, which is different from the first refraction index; a plurality of semiconductor elements; and a layer removal region. The semiconductor elements are capable of being separated each other by irradiating a laser beam on the first layer along with a cutting line. The laser beam irradiation provides a modified region in the first layer so that the semiconductor elements are capable of being separated by a crack generated in the modified region. The layer removal region is provided such that the second layer in the layer removal region is removed from the wafer.

Abstract: A method of manufacturing a micro-structure includes dry-etching a sacrificial layer provided to a silicon substrate to form structures the sacrificial layer reacting with etching gas to generate reaction products including H2O, wherein the dry-etching includes etching the sacrificial layer and removing H2O as one of the reaction products generated through the etching step of the sacrificial layer, wherein the etching and the removing of H2O are repetitively performed.

Abstract: A method for manufacturing a semiconductor device having a movable portion includes the steps of: forming a trench on a semiconductor layer so that the trench reaches an insulation layer; and forming a movable portion by etching a sidewall of the trench so that the semiconductor layer is separated from the insulation layer. The steps of forming the trench and forming the movable portion are performed by a reactive ion etching method. The insulation layer disposed on the bottom of the trench is prevented from charging positively in the step of forming the trench. The insulation layer disposed on the bottom of the trench is charged positively in the step of forming the movable portion.

Abstract: A powder composition, characterized in that the powder composition includes delipidated egg yolk particles and a functional food material, the functional food material being impregnated in pores of the delipidated egg yolk particles; a method for preparing a powder composition characterized by mixing a delipidated egg yolk with water, spray-drying the resulting mixture, to prepare porous, delipidated egg yolk particles having pores on surfaces thereof; and mixing the resulting delipidated egg yolk particles with a functional food material, and drying the resulting mixture under reduced pressure; and a food including the powder composition mentioned above.

Abstract: A semiconductor device having a membrane includes a semiconductor substrate, which has an active surface, and a membrane. A cavity is located between the active surface and the membrane and hermetically sealed. The membrane includes a first film, which has a through hole that extends through the first film, and a second film, which has been formed by reflowing a reflow layer made of a material that becomes viscous and reflows when heated. The through hole has been plugged by the second film.

Abstract: First and second insulating layers in an EL device are respectively composed of Al2O3/TiOx:Ba laminated layers. The Al2O3/TiOx:Ba laminated layers are formed by alternately laminating Al2O3 layers and TiO2 layers added with Ba by an ALE method. Adding Ba into the TiO2 layers mitigates a change in resistivity thereof with respect to a change in temperature. As a result, the EL device provides an excellent voltage withstanding performance which is stable against the changes in the temperature.

Abstract: An electroluminescent device improved in brightness is disclosed. The electroluminescent device comprising sequentially stacked layers having an optically transparent material on at least the viewing side of the structure comprises a luminescent layer based on a Group II-III-VI compound host material with an element acting as a luminescent center added therein, wherein a Group II element having an ion radius differing from that of the Group II element constituting the compound host material is further added in the luminescent layer.

Abstract: An electroluminescent device has a luminescent layer including an alkaline earth thiogallate doped with a luminescent center for producing blue light. An insulating layer disposed next to the luminescent layer includes a buffer area contacting the luminescent layer. The buffer area is made from a material which has an amorphous state at a temperature sufficient for crystallization of the alkaline earth thiogallate. Thus, when the device is manufactured, the luminescent layer can be formed in an amorphous state on the insulating layer and heat treated. Since the buffer layer remains in an amorphous state, the formation of alkaline earth sulfides which might degrade the color purity of emitted light at the interface of the crystalline luminescent layer and the amorphous buffer layer can be prevented.

Abstract: An electroluminescent device improved in brightness includes sequentially stacked layers having an optically transparent material on at least the viewing side of the structure and has a luminescent layer based on a Group II-III-VI compound host material with an element acting as a luminescent center added therein, wherein a Group II element having an ion radius differing from that of the Group II element constituting the compound host material is further added in the luminescent layer.

Abstract: A process for fabricating a blue-emitting SrS:Ce based electroluminescent device, which improves in brightness and blue color purity of the electroluminescent device, is disclosed. The blue-emitting luminescent layer of the device is formed as follows: a luminescent layer based on strontium sulfide (SrS) with cerium (Ce) doped at a concentration in a range of 0.01% by atomic or higher but less than 0.3% by atomic is deposited; and then heat treatment is applied thereto at a temperature in a range of 400.degree. C. or higher but 550.degree. C. or lower before forming any other layer thereon.

Abstract: A tape printing system for printing a desired image on a desired tape includes: a data inputting device for inputting data indicative of a desired image, the data inputting device including a displaying for displaying the desired image; and a tape printing device connected to the data inputting device with a connecting line for receiving the data transferred through the connecting line from the data inputting device and for printing the desired image on a desired tape based on the received data. The tape printing device is formed with an information transferring portion for transferring information on the tape to the data inputting device through the connecting line, the information on the tape being displayed on the display.