Abstract: A wavelength conversion element includes a substrate, a wavelength converting member disposed on at least part of a surface of substrate and having a shape of a plate or film, and a light receiver integrated in the substrate and including a p-n junction composed of a p-type semiconductor and an n-type semiconductor.

Abstract: A solid-state light source device is equipped with a semiconductor light emitting element and a wavelength conversion element. The semiconductor light emitting element has a first light emitter and a second light emitter. The wavelength conversion element has a first wavelength converter containing a first phosphor and has a second wavelength converter containing a second phosphor. The first wavelength converter and the second wavelength converter are disposed apart from each other. The first light emitter emits first excitation light, and the second light emitter emits second excitation light. The first phosphor converts the first excitation light into first-wavelength light, and the second phosphor converts the second excitation light into second-wavelength light.

Abstract: A light emitting device includes a wavelength conversion element, and an excitation light source which radiates excitation light to the wavelength conversion element. The wavelength conversion element includes a support member having a supporting surface, and a wavelength conversion member disposed on the supporting surface so as to be contained within the support member when the support member is viewed from the supporting surface side. An outer peripheral region on the support member, which is an outer peripheral portion of an arrangement region including the wavelength conversion member and is exposed from the wavelength conversion member, includes a light absorbing portion which can absorb first light having same wavelength as the excitation light or a light scattering portion which can scatter the first light. The arrangement region includes a reflective member which is disposed between the wavelength conversion member and the support member, and is different from the support member.

Abstract: A light source device includes: a semiconductor light-emitting device including a flat-shaped base having a first main surface on a first side and a second main surface and a semiconductor light-emitting element disposed on the first side; a first fixing component having a first through-hole and a first pressing surface that presses the first main surface; and a second fixing component having a second through-hole and a second pressing surface that presses the second main surface. The base is fixed between the first and second pressing surfaces by an engagement between a first inner surface surrounding the first through-hole of the first fixing component and a second outer surface of the second fixing component. A distance between the first and second pressing surfaces is smaller than or equal to a thickness of the base, and a void is formed lateral to the base between the first and second pressing surfaces.

Abstract: A wavelength conversion element includes a support member having a supporting surface, and a wavelength converter disposed above the supporting surface. The wavelength converter contains first fluorescent particles which absorb excitation light and generate fluorescence (second radiation light), and a transparent binder which bonds the first fluorescent particles, and has a joint surface facing supporting surface, and an incident surface disposed opposite to the joint surface, the excitation light entering the incident surface. The excitation light and fluorescence are emitted from the incident surface. The wavelength converter includes projections. At least part of the projections is disposed on the incident surface. The first fluorescent particles are partially exposed from vertices of the projections.

Abstract: A light source device includes: a holder that has a first surface and a second surface located higher than the first surface, and is an integral structure; a semiconductor light-emitting device on the first surface; an optical element unit that is disposed above the semiconductor light-emitting device, and has a reflective surface that inclines with respect to the first surface and reflects emitted light from the semiconductor light-emitting device; and a phosphor optical element that is disposed on the second surface and irradiated with reflected light from the optical element unit.

Abstract: The present disclosure aims to enhance controllability of a lighting apparatus and increase durability. A lighting apparatus includes a light source; a condenser that converges first light emitted from the light source onto a predetermined focal position of a wavelength conversion element as converged light; the wavelength conversion element that receives the converged light and emits second light at an emission point; and a projection lens that projects the second light as projection light. The lighting apparatus changes the focal position of the condenser lens to change the emission point of the second light to the projection lens, thereby being capable of projecting the second light in any direction.

Abstract: The present invention relates to a glass sheet having a fluorine concentration at one surface larger than a fluorine concentration at the other surface, the surfaces being opposite to each other in a thickness direction, in which the following Formula (1) is satisfied and the amount of fluorine contained in the glass is more than 0.23 mol %·?m and 21 mol %·?m or less on a depth-direction profile by secondary ion mass spectrometry (SIMS) in which a horizontal axis expresses depth and a vertical axis expresses fluorine concentration (mol %). The fluorine concentration is an average fluorine concentration (mol %) by SIMS in the depth of from 1 to 24 ?m. 0.1??F/?H2O??(1) (?F and ?H2O are described in the specification).

Abstract: A phosphor optical element includes: a base member; a phosphor-containing member that includes a transparent member containing a phosphor particle; and a cover member, wherein the base member, the phosphor-containing member, and the cover member are sequentially formed on a transparent base that is transparent to a wavelength of incident light from an excitation light source, the phosphor particle has a diameter no greater than the wavelength of the incident light, and in an arbitrary cross section of the phosphor-containing member in a direction perpendicular to a main surface of the transparent base, the phosphor-containing member has, in a direction perpendicular to the main surface of the transparent base, a thickness no greater than the wavelength of the incident light.

Abstract: A projection apparatus of the present disclosure includes a light-emitting element for emitting excitation light, a wavelength converter for receiving the excitation light, converting the excitation light into light of a different wavelength, and emitting the converted light as radiation light, and an optical filter for receiving the radiation light. The optical filter reflects long-wavelength light of wavelengths longer than wavelengths of the radiation light. With this configuration, the optical filter reflects long-wavelength light of wavelengths longer than wavelengths of the radiation light, thus being able to prevent the wavelength converter from being irradiated with long-wavelength light, and being able to prevent deterioration of the wavelength converter.

Abstract: Provided are a light source, a light source unit, and a light source module that have small sizes, high output, and high coupling efficiency with an optical system, and further, can efficiently dissipate heat generation sources to exhaust heat. In the light source unit of the present disclosure, the light source is a semiconductor laser array. This configuration can realize high output of the light source, and high output of the whole light source unit. The light source unit includes a lens that converts outgoing beams to parallel beams, and an optical element having a plurality of optical surfaces with different minute inclination angles with respect to a principal surface. The minute inclination angles of the plurality of optical surfaces that intersect with optical rays of the plurality of outgoing beams passing through a principal point of the lens are opposite to one another with respect to the principal surface.

Abstract: A glass sheet includes a first main surface and a second main surface opposite to the first main surface in a thickness direction. X represented by the following formula (1) is ?0.29<X<0.29: A×?1H/30Si+B×?Na2O+C×?Sn+D×?F=X (1). F0-3 determined according to the following formula (II) is 0.02 or more: F0-3=[average fluorine concentration (wt %) by SIMS at depth of 0 to 3 ?m in first main surface]×3 (II).

Abstract: An illumination apparatus of the disclosure includes a semiconductor light-emitting element and a light conversion element. The semiconductor light-emitting element has a first optical waveguide and a second optical waveguide. The light conversion element has a first light converter and a second light converter. A first emitted light emitted from first optical waveguide enters the first light converter and a second emitted light emitted from the second optical waveguide enters the second light converter. First power applied to the first optical waveguide and second power applied to the second optical waveguide are independent.

Abstract: A semiconductor light emitting device includes: a nitride semiconductor light emitting element including a nitride semiconductor substrate having a polar or semipolar surface and a nitride semiconductor multilayer film stacked on the polar or semipolar surface; and a mounting section to which the element is mounted. The nitride semiconductor multilayer film includes an electron block layer. The electron block layer has a smaller lattice constant than the nitride semiconductor substrate. The mounting section includes at least a first mounting section base. The first mounting section base is located close to the nitride semiconductor light emitting element. The first mounting section base has a lower thermal expansion coefficient than the nitride semiconductor multilayer film. The first mounting section base has a lower thermal conductivity than the nitride semiconductor multilayer film.

Abstract: A phosphor optical element includes: a base member; a phosphor-containing member that includes a transparent member containing a phosphor particle; and a cover member, wherein the base member, the phosphor-containing member, and the cover member are sequentially formed on a transparent base that is transparent to a wavelength of incident light from an excitation light source, the phosphor particle has a diameter no greater than the wavelength of the incident light, and in an arbitrary cross section of the phosphor-containing member in a direction perpendicular to a main surface of the transparent base, the phosphor-containing member has, in a direction perpendicular to the main surface of the transparent base, a thickness no greater than the wavelength of the incident light.

Abstract: A glass sheet has one surface and the other surface facing the one surface in a thickness direction, wherein a fluorine concentration (average fluorine concentration by SIMS at a depth of 1 to 24 ?m) in the one surface is higher than that in the other surface. The following expression is satisfied: 0.07??F/?H2O. ?F (mol %) is a value obtained by subtracting an average fluorine concentration in the surface having the lower fluorine concentration from that in the surface having the higher fluorine concentration, and ?H2O (mol %) is an absolute value of a value obtained by subtracting an average H2O concentration in the surface having the higher fluorine concentration from that in the surface having the lower fluorine concentration.

Abstract: In a light source in which a semiconductor luminescence element and a phosphor are combined, red light having high color purity is efficiently radiated. The light source includes: a semiconductor luminescence element; a fixed or rotatable first wavelength converting unit; and a rotatable second wavelength converting unit. The second wavelength converting unit includes: a second wavelength converting region that absorbs output light emitted from the semiconductor luminescence element and radiates light having a second wavelength different from that of the output light; and a transmission region that transmits the output light. The first wavelength converting unit absorbs the output light to radiate light having a first wavelength longer than the second wavelength of the light, and the light having the first wavelength is transmitted through the transmission region.

Abstract: A float glass for chemical strengthening, having a bottom surface to contact a molten metal during molding and a top surface facing the bottom surface. An absolute value of a difference between a normalized hydrogen concentration at a depth of 5 to 10 ?m that is a value obtained by dividing a hydrogen concentration at a depth of 5 to 10 ?m by a hydrogen concentration at a depth of 50 to 55 ?m in the top surface and the normalized hydrogen concentration at a depth of 5 to 10 ?m in the bottom surface is 0.35 or less.

Abstract: A phosphor optical element includes: a base member; a phosphor-containing member that includes a transparent member containing a phosphor particle; and a cover member, wherein the base member, the phosphor-containing member, and the cover member are sequentially formed on a transparent base that is transparent to a wavelength of incident light from an excitation light source, the phosphor particle has a diameter no greater than the wavelength of the incident light, and in an arbitrary cross section of the phosphor-containing member in a direction perpendicular to a main surface of the transparent base, the phosphor-containing member has, in a direction perpendicular to the main surface of the transparent base, a thickness no greater than the wavelength of the incident light.

Abstract: A wavelength conversion member includes: a heat conducting layer; a sapphire substrate having a third surface directly contact with a second surface of the heat conducting layer and the fourth surface opposite to the third surface; and a phosphor layer having a fifth surface directly contact with the fourth surface and a sixth surface opposite to the fifth surface, the phosphor layer including phosphor. At least one of an area of a first surface and an area of the second surface of the heat conducting layer is at least 2800 times as large as an area of the sixth surface of the phosphor layer. At least one of an area of the third surface and an area of the fourth surface of the sapphire substrate is at least two times as large as the area of the sixth surface of the phosphor layer.