Abstract: An image display device which reduces speckles in an image display device using a laser source includes: a laser source which emits excitation light; a collecting lens which collects the excitation light; a deflecting element which scans the excitation light collected by the collecting lens; and a light conversion panel which converts a wavelength of the excitation light scanned by the deflecting element and emits fluorescence, wherein the light conversion panel includes a plurality of phosphor layers which are planarly disposed, absorb the excitation light, and emit the fluorescence.

Abstract: A chemically strengthened glass is disposed on a base, and an impacting object is dropped from above in a state where one surface of the chemically strengthened glass is in contact with an abrasive surface of a sandpaper containing an abrasive having a size of not smaller than a depth of a compressive stress layer.

Abstract: A semiconductor light emitting device includes: a nitride semiconductor light emitting element including a nitride semiconductor substrate having a polar or semipolar surface and a nitride semiconductor multilayer film stacked on the polar or semipolar surface; and a mounting section to which the element is mounted. The nitride semiconductor multilayer film includes an electron block layer. The electron block layer has a smaller lattice constant than the nitride semiconductor substrate. The mounting section includes at least a first mounting section base. The first mounting section base is located close to the nitride semiconductor light emitting element. The first mounting section base has a lower thermal expansion coefficient than the nitride semiconductor multilayer film. The first mounting section base has a lower thermal conductivity than the nitride semiconductor multilayer film.

Abstract: A visible light communication system includes a light transmitter including a group III nitride semiconductor laser element and a wavelength converter provided to face a light exit surface of the nitride semiconductor laser element and containing a fluorescent material. The visible light communication system further includes a wavelength filter configured to remove light emitted from the fluorescent material and a light receiving element configured to receive light emitted from the group III nitride semiconductor laser element via the wavelength filter.

Abstract: An object of the present invention is to provide a glass sheet in which warpage after chemical strengthening can be effectively suppressed and also polishing treatment or the like before chemical strengthening can be omitted or simplified. Thus, the present invention provides a glass sheet in which a surface Na2O amount in one surface thereof is lower than the surface Na2O amount in the other surface by 0.38% by mass to 1.2% by mass.

Abstract: The present invention relates to a glass sheet having an amount of fluorine contained in the glass of more than 0.23 mol %·?m and 21 mol %·?m or less on a depth-direction profile by secondary ion mass spectrometry (SIMS) in which a horizontal axis expresses depth and a vertical axis expresses fluorine concentration (mol %). According to the glass sheet of the present invention, warpage after chemical strengthening can be reduced and polishing treatment or the like before the chemical strengthening can be simplified or omitted.

Abstract: The present invention relates to a glass sheet having a fluorine concentration at one surface larger than a fluorine concentration at the other surface, the surfaces being opposite to each other in a thickness direction, in which the following Formula (1) is satisfied and the amount of fluorine contained in the glass is more than 0.23 mol %·?m and 21 mol %·?m or less on a depth-direction profile by secondary ion mass spectrometry (SIMS) in which a horizontal axis expresses depth and a vertical axis expresses fluorine concentration (mol %). The fluorine concentration is an average fluorine concentration (mol %) by SIMS in the depth of from 1 to 24 ?m. 0.1??F/?H2O ??(1) (?F and ?H2O are described in the specification).

Abstract: The present invention relates to a method for manufacturing a float glass containing a step of melting a glass raw material, a step of forming the glass melted by the preceding step into a glass ribbon while floating the glass on a molten metal, and a step of annealing the glass ribbon. In the forming step, a fluid containing a molecule having a fluorine atom is sprayed onto the glass ribbon to control a fluorine amount in the depth of up to 30 ?m in the thickness direction from the upper surface of the glass ribbon to more than 0.23 mol %·?m.

Abstract: The present invention relates to a glass sheet having a fluorine concentration at one surface larger than that at the other surface, in which the following Formula (1) is satisfied and the amount of fluorine contained in the glass is more than 0.23 mol %·?m and 21 mol %·?m or less on a depth-direction profile by SIMS. The fluorine concentration is an average fluorine concentration (mol %) by SIMS in the depth of from 1 to 24 ?m. 1?x??(1) (x is a maximum depth (?m) in which a slope at an arbitrary depth xi (?m) in the fluorine concentration profile by SIMS satisfies the following Formula (2)). [F(xi+0.1)?F(xi)]/0.1=?0.015??(2) (F(xi) represents a fluorine concentration (mol %) by SIMS at the depth xi (?m)).

Abstract: A semiconductor light emitting device includes: a nitride semiconductor light emitting element including a nitride semiconductor substrate having a polar or semipolar surface and a nitride semiconductor multilayer film stacked on the polar or semipolar surface; and a mounting section to which the element is mounted. The nitride semiconductor multilayer film includes an electron block layer. The electron block layer has a smaller lattice constant than the nitride semiconductor substrate. The mounting section includes at least a first mounting section base. The first mounting section base is located close to the nitride semiconductor light emitting element. The first mounting section base has a lower thermal expansion coefficient than the nitride semiconductor multilayer film. The first mounting section base has a lower thermal conductivity than the nitride semiconductor multilayer film.

Abstract: The present disclosure aims to enhance controllability of a lighting apparatus and increase durability. A lighting apparatus includes a light source; a condenser that converges first light emitted from the light source onto a predetermined focal position of a wavelength conversion element as converged light; the wavelength conversion element that receives the converged light and emits second light at an emission point; and a projection lens that projects the second light as projection light. The lighting apparatus changes the focal position of the condenser lens to change the emission point of the second light to the projection lens, thereby being capable of projecting the second light in any direction.

Abstract: An illumination apparatus of the disclosure includes a semiconductor light-emitting element and a light conversion element. The semiconductor light-emitting element has a first optical waveguide and a second optical waveguide. The light conversion element has a first light converter and a second light converter. A first emitted light emitted from first optical waveguide enters the first light converter and a second emitted light emitted from the second optical waveguide enters the second light converter. First power applied to the first optical waveguide and second power applied to the second optical waveguide are independent.

Abstract: A projection apparatus of the present disclosure includes a light-emitting element for emitting excitation light, a wavelength converter for receiving the excitation light, converting the excitation light into light of a different wavelength, and emitting the converted light as radiation light, and an optical filter for receiving the radiation light. The optical filter reflects long-wavelength light of wavelengths longer than wavelengths of the radiation light. With this configuration, the optical filter reflects long-wavelength light of wavelengths longer than wavelengths of the radiation light, thus being able to prevent the wavelength converter from being irradiated with long-wavelength light, and being able to prevent deterioration of the wavelength converter.

Abstract: A semiconductor light-emitting device includes a first heat sink and a second heat sink both formed of an insulating member and facing and thermally connected to each other, and a semiconductor light-emitting element. The semiconductor light-emitting element is held in a cavity between the first heat sink and the second heat sink. The second heat sink has a first electrode and a second electrode on a surface facing the first heat sink, and a third electrode and a fourth electrode on a surface opposite to the surface facing the first heat sink. The first electrode is connected to a lower electrode of the light-emitting element. The second electrode is connected to an upper electrode of the light-emitting element. The first electrode and the third electrode are connected to each other, and the second electrode and the fourth electrode are connected to each other.

Abstract: A solid-state light source device is equipped with a semiconductor light emitting element and a wavelength conversion element. The semiconductor light emitting element has a first light emitter and a second light emitter. The wavelength conversion element has a first wavelength converter containing a first phosphor and has a second wavelength converter containing a second phosphor. The first wavelength converter and the second wavelength converter are disposed apart from each other. The first light emitter emits first excitation light, and the second light emitter emits second excitation light. The first phosphor converts the first excitation light into first-wavelength light, and the second phosphor converts the second excitation light into second-wavelength light.

Abstract: Provided are a light source, a light source unit, and a light source module that have small sizes, high output, and high coupling efficiency with an optical system, and further, can efficiently dissipate heat generation sources to exhaust heat. In the light source unit of the present disclosure, the light source is a semiconductor laser array. This configuration can realize high output of the light source, and high output of the whole light source unit. The light source unit includes a lens that converts outgoing beams to parallel beams, and an optical element having a plurality of optical surfaces with different minute inclination angles with respect to a principal surface. The minute inclination angles of the plurality of optical surfaces that intersect with optical rays of the plurality of outgoing beams passing through a principal point of the lens are opposite to one another with respect to the principal surface.

Abstract: An image display device which reduces speckles in an image display device using a laser source includes: a laser source which emits excitation light; a collecting lens which collects the excitation light; a deflecting element which scans the excitation light collected by the collecting lens; and a light conversion panel which converts a wavelength of the excitation light scanned by the deflecting element and emits fluorescence, wherein the light conversion panel includes a plurality of phosphor layers which are planarly disposed, absorb the excitation light, and emit the fluorescence.

Abstract: An optical irradiation apparatus includes: a light-emitting device configured to emit a plurality of light beams whose optical axes extend in a substantially identical direction; a collimator part configured to convert the light beams into parallel light beams; and a light condensing part configured to collect the parallel light beams. The light-emitting device includes a super luminescent diode array in which a plurality of waveguides are provided on a substrate. Each of the waveguides has a light-emitting facet including a light emission point from which an associated one of the light beams is emitted. The light emission points are located in a plane. The plane including the light emission points is orthogonal to a direction of an optical axis of the collimator part.

Abstract: A light-emitting device includes: a semiconductor light-emitting element which emits light of a first wavelength; and a first wavelength conversion unit which includes a first phosphor and emits light of a second wavelength by being excited by the light of the first wavelength. The first phosphor contains europium as an activator. The light of the first wavelength is emitted to the first wavelength conversion unit at 1 kW/cm2 or greater. 1??12/?11?1.17 is satisfied where ?1 is light output ratio of the light of the first wavelength to the light of the second wavelength, ?11 is light output ratio obtained when the light of the first wavelength is emitted to the first wavelength conversion unit at 5 kW/cm2, and ?12 is light output ratio obtained when the light of the first wavelength is emitted to the first wavelength conversion unit at 2.5 kW/cm2.

Abstract: In a light source in which a semiconductor luminescence element and a phosphor are combined, red light having high color purity is efficiently radiated. The light source includes: a semiconductor luminescence element; a fixed or rotatable first wavelength converting unit; and a rotatable second wavelength converting unit. The second wavelength converting unit includes: a second wavelength converting region that absorbs output light emitted from the semiconductor luminescence element and radiates light having a second wavelength different from that of the output light; and a transmission region that transmits the output light. The first wavelength converting unit absorbs the output light to radiate light having a first wavelength longer than the second wavelength of the light, and the light having the first wavelength is transmitted through the transmission region.