Abstract: A wavelength conversion member includes a heat conductor, a light guide path and a wavelength converter. The heat conductor has a recessed portion and an opening extending through the heat conductor. The light guide path includes a transparent material with which the opening is filled. The light guide path includes a light exit port disposed on a side of the recessed portion and a light incident port disposed on a side opposite to the recessed portion. The wavelength converter converts first light having a first peak wavelength incident through the light guide path into second light having a second peak wavelength different from the first peak wavelength. The wavelength converter is disposed in contact with the heat conductor, at least a part of the wavelength converter being embedded in the recessed portion.

Abstract: A nitride semiconductor light-emitting system includes a nitride semiconductor light-emitting device, a base mount holding the nitride semiconductor light-emitting device, having an opening, and containing first metal as a main component, a cap adhered to the base mount, and a lead pin penetrating the opening. The lead pin is fixed to an inner wall of the opening with an insulating member and a buffer member interposed therebetween, the buffer member and the insulating member being stacked on the inner wall in this order. The insulating member contains silicon oxide as a component. The buffer member is made of second metal having a smaller standard oxidation-reduction potential than the first metal, or an alloy containing the second metal.

Abstract: A visible light communication system includes a light transmitter including a group III nitride semiconductor laser element and a wavelength converter provided to face a light exit surface of the nitride semiconductor laser element and containing a fluorescent material. The visible light communication system further includes a wavelength filter configured to remove light emitted from the fluorescent material and a light receiving element configured to receive light emitted from the group III nitride semiconductor laser element via the wavelength filter.

Abstract: A semiconductor light emitting device includes: a nitride semiconductor light emitting element including a nitride semiconductor substrate having a polar or semipolar surface and a nitride semiconductor multilayer film stacked on the polar or semipolar surface; and a mounting section to which the element is mounted. The nitride semiconductor multilayer film includes an electron block layer. The electron block layer has a smaller lattice constant than the nitride semiconductor substrate. The mounting section includes at least a first mounting section base. The first mounting section base is located close to the nitride semiconductor light emitting element. The first mounting section base has a lower thermal expansion coefficient than the nitride semiconductor multilayer film. The first mounting section base has a lower thermal conductivity than the nitride semiconductor multilayer film.

Abstract: A nitride semiconductor light emitting device includes: an uneven substrate having an uneven structure in which recesses are formed; a first nitride semiconductor layer of a first conductive type formed on the uneven structure; a first light emitting layer formed on the first nitride semiconductor layer; and a second nitride semiconductor layer of a second conductive type formed on the light emitting layer, wherein each protrusion has a bottom made of a material or composition having a thermal expansion coefficient larger than the thermal expansion coefficient of the material or composition of the first nitride semiconductor layer.

Abstract: A glass sheet has one surface and the other surface facing the one surface in a thickness direction, wherein a fluorine concentration (average fluorine concentration by SIMS at a depth of 1 to 24 ?m) in the one surface is higher than that in the other surface. The following expression is satisfied: 0.07??F/?H2O. ?F (mol %) is a value obtained by subtracting an average fluorine concentration in the surface having the lower fluorine concentration from that in the surface having the higher fluorine concentration, and ?H2O (mol %) is an absolute value of a value obtained by subtracting an average H2O concentration in the surface having the higher fluorine concentration from that in the surface having the lower fluorine concentration.

Abstract: A glass sheet includes 4 mol % or more of Al2O3. In the glass sheet, a surface Na2O amount in one surface of the glass sheet is lower than the surface Na2O amount in the other surface of the glass sheet by 0.2 mass % to 1.2 mass %.

Abstract: An optical element includes a phosphor layer containing a phosphor which is excited by light of a first wavelength and radiates light of a second wavelength different from the first wavelength, a first optical member provided on a first surface of the phosphor layer and configured to concentrate light in the phosphor layer, and a second optical member provided on the first surface of the phosphor layer or the same side to which the first surface faces, or on a second surface opposite to the first surface, and configured to convert light radiated from the phosphor layer into parallel light.

Abstract: A nitride semiconductor light-emitting device having an optical waveguide includes, in the following order, at least: a first cladding layer; an active layer; and a second cladding layer, wherein the second cladding layer includes (i) a transparent conductive layer comprising a transparent conductor and (ii) a nitride semiconductor layer comprising a nitride semiconductor, the nitride semiconductor layer being formed closer to the active layer than the transparent conductive layer.

Abstract: A semiconductor light-emitting device includes a first heat sink and a second heat sink both formed of an insulating member and facing and thermally connected to each other, and a semiconductor light-emitting element. The semiconductor light-emitting element is held in a cavity between the first heat sink and the second heat sink. The second heat sink has a first electrode and a second electrode on a surface facing the first heat sink, and a third electrode and a fourth electrode on a surface opposite to the surface facing the first heat sink. The first electrode is connected to a lower electrode of the light-emitting element. The second electrode is connected to an upper electrode of the light-emitting element. The first electrode and the third electrode are connected to each other, and the second electrode and the fourth electrode are connected to each other.

Abstract: A light-emitting device includes: a semiconductor light-emitting element which emits light of a first wavelength; and a first wavelength conversion unit which includes a first phosphor and emits light of a second wavelength by being excited by the light of the first wavelength. The first phosphor contains europium as an activator. The light of the first wavelength is emitted to the first wavelength conversion unit at 1 kW/cm2 or greater. 1??12/?11?1.17 is satisfied where ?1 is light output ratio of the light of the first wavelength to the light of the second wavelength, ?11 is light output ratio obtained when the light of the first wavelength is emitted to the first wavelength conversion unit at 5 kW/cm2, and ?12 is light output ratio obtained when the light of the first wavelength is emitted to the first wavelength conversion unit at 2.5 kW/cm2.

Abstract: A light-emitting device includes: a package; a semiconductor light-emitting element mounted above the package; a cap component provided above the package; a sealing component which seals a space between the package and the cap component; and a phosphor containing resin including phosphor disposed in the sealed space.

Abstract: A semiconductor light emitting device includes: a package which is made of a resin and includes a recess; a lead frame exposed to a bottom of the recess; a semiconductor light emitting element connected to the lead frame in the recess; a phosphor layer over the bottom of the recess; and a second resin layer above the phosphor layer and the semiconductor light emitting element, in which the phosphor layer contains a semiconductor fine particle having an excitation fluorescence spectrum which changes according to a particle size, and the phosphor layer includes a water-soluble or water-dispersible material.

Abstract: A nitride semiconductor light-emitting system includes a nitride semiconductor light-emitting device, a base mount holding the nitride semiconductor light-emitting device, having an opening, and containing first metal as a main component, a cap adhered to the base mount, and a lead pin penetrating the opening. The lead pin is fixed to an inner wall of the opening with an insulating member and a buffer member interposed therebetween, the buffer member and the insulating member being stacked on the inner wall in this order. The insulating member contains silicon oxide as a component. The buffer member is made of second metal having a smaller standard oxidation-reduction potential than the first metal, or an alloy containing the second metal.

Abstract: A chemically strengthened glass is disposed on a base, and an impacting object is dropped from above in a state where one surface of the chemically strengthened glass is in contact with an abrasive surface of a sandpaper containing an abrasive having a size of not smaller than a depth of a compressive stress layer.

Abstract: A phosphor optical element includes: a base member; a phosphor-containing member that includes a transparent member containing a phosphor particle; and a cover member, wherein the base member, the phosphor-containing member, and the cover member are sequentially formed on a transparent base that is transparent to a wavelength of incident light from an excitation light source, the phosphor particle has a diameter no greater than the wavelength of the incident light, and in an arbitrary cross section of the phosphor-containing member in a direction perpendicular to a main surface of the transparent base, the phosphor-containing member has, in a direction perpendicular to the main surface of the transparent base, a thickness no greater than the wavelength of the incident light.

Abstract: A float glass, which is produced by a float process, has a bottom surface to contact a molten metal during forming and a top surface facing the bottom surface, and is capable of having, after chemical strengthening, a surface compressive stress of 600 MPa or more and a depth of a compressive stress layer of 15 ?m or more from a surface thereof. Before chemical strengthening, a difference obtained by subtracting a surface compressive stress value ?CB in the bottom surface from a surface compressive stress value ?CT in the top surface is ?0.6 MPa or more and 0.25 MPa or less.

Abstract: A light-emitting device includes: a package; a semiconductor light-emitting element mounted above the package; a cap component provided above the package; a sealing component which seals a space between the package and the cap component; and a phosphor containing resin including phosphor disposed in the sealed space.

Abstract: A float glass for chemical strengthening, having a bottom surface to contact a molten metal during molding and a top surface facing the bottom surface. An absolute value of a difference between a normalized hydrogen concentration at a depth of 5 to 10 ?m that is a value obtained by dividing a hydrogen concentration at a depth of 5 to 10 ?m by a hydrogen concentration at a depth of 50 to 55 ?m in the top surface and the normalized hydrogen concentration at a depth of 5 to 10 ?m in the bottom surface is 0.35 or less.

Abstract: A light-emitting device includes a semiconductor light-emitting element and a fluorescent member which emits fluorescent light when irradiated with light from the semiconductor light-emitting element. The fluorescent member includes (i) oxygen-proof resin having no permeability to oxygen and (ii) resin which includes semiconductor particles having different excitation fluorescence spectra according to particle diameter and is encased in the oxygen-proof resin.