Abstract: A personal digital assistant includes a display control unit that causes an object as a target of the touch operation to be displayed in the image display unit, an image input unit that acquires a video of an operation instruction object that performs the touch operation on the touch screen, and a shaking detection unit that analyzes the video of the operation instruction object, which is acquired by the image input unit, and calculates a relative shaking amount of the operation instruction object to a position of the personal digital assistant as a reference. The display control unit causes the object to be displayed in the image display unit to be displayed, based on the relative shaking amount of the operation instruction object, which is calculated by the shaking detection unit, such that the object is shifted in accordance with the relative shaking amount.

Abstract: coating film having excellent adhesion, even without the presence of a chemical conversion film treatment out as an undercoat and a metal automotive part having the coating film. A powder is deposited by powder-coating onto the surface of a metal automotive part that has been quenched after simultaneously forging, and tempering the metal automotive part and bake-hardening the deposited powder to form a skin film on the surface of the metal automotive part. The surface of the metal automotive part before the powder is powder-coated thereon is a work-hardened material surface that has been not been subjected to a chemical conversion filming treatment.

Abstract: A method for manufacturing a semiconductor substrate by forming an insulator film and a semiconductor single crystal layer on a surface of a silicon single crystal substrate to manufacture a semiconductor substrate having the semiconductor single crystal layer on the insulator film, the method including at least the steps of: forming a silicon nitride film having an epitaxial relationship with the silicon single crystal substrate on the surface of the silicon single crystal substrate as the insulator film by subjecting the silicon single crystal substrate to a heat treatment under a nitrogen gas-containing atmosphere; and forming the semiconductor single crystal layer on the silicon nitride film by epitaxial growth. This makes it possible to obtain a semiconductor substrate by simple method with high productivity at low cost even when the insulator film provided between the silicon single crystal substrate and the semiconductor single crystal layer is a silicon nitride film.

Abstract: A method for manufacturing a bonded SOI wafer, the method using a silicon single crystal wafer having a resistivity of 100 ?·cm or more as the base wafer, and including steps of: forming an underlying insulator film on a bonding surface side of the base wafer; depositing a polycrystalline silicon layer on a surface of the underlying insulator film; polishing a surface of the polycrystalline silicon layer; modifying the polycrystalline silicon layer by performing ion implantation on the polished polycrystalline silicon layer to form a modified silicon layer; forming the insulator film on a bonding surface of the bond wafer; bonding the bond wafer and a surface of the modified silicon layer of the base wafer with the insulator film interposed therebetween; and thinning the bonded bond wafer to form an SOI layer. This provides a bonded SOI wafer excellent in harmonic wave characteristics.

Abstract: A method for manufacturing a bonded SOI wafer, the method using a silicon single crystal wafer having a resistivity of 100 ?·cm or more as the base wafer, and including steps of: forming an underlying insulator film on a bonding surface side of the base wafer; depositing a polycrystalline silicon layer on a surface of the underlying insulator film; polishing a surface of the polycrystalline silicon layer; modifying the polycrystalline silicon layer by performing ion implantation on the polished polycrystalline silicon layer to form a modified silicon layer; forming the insulator film on a bonding surface of the bond wafer; bonding the bond wafer and a surface of the modified silicon layer of the base wafer with the insulator film interposed therebetween; and thinning the bonded bond wafer to form an SOI layer. This provides a bonded SOI wafer excellent in harmonic wave characteristics.

Abstract: The invention provides a coating film having excellent adhesion, even without a chemical conversion film treatment being carried out as an undercoat treatment, and a metal automotive part having the coating film. A powder is deposited by powder-coating onto the surface of a metal automotive part that has been quenched after forging, and tempering of the metal automotive part and bake-hardening of the deposited powder are carried out simultaneously, thereby forming a skin film on the surface of the metal automotive part. The surface of the metal automotive part before the powder is powder-coated thereon is a work-hardened basis material surface that has been not subjected to a chemical conversion filming treatment.

Abstract: A hollow shaft, which is usable with a constant velocity universal joint, has an increased static torsional strength and torsional fatigue strength of a small diameter portion (small diameter portion having a smooth outer peripheral surface) formed near a spline at an end portion of the hollow shaft, and has a reduced manufacturing cost. The hollow shaft is molded by plastic working from a tubular blank, and subjected to quench hardening treatment. The quench hardening treatment includes carburizing and quenching treatment. The hollow shaft includes a softened section formed in a part of the hollow shaft by local heating treatment after carrying out the carburizing and quenching treatment.

Abstract: Provided is a cage (5, 65, 95) for a constant velocity universal joint, which is formed into a ring shape with a substantially uniform thickness, including a plurality of pockets (20, 80, 110) formed in a circumferential direction of the cage (5, 65, 95), for receiving torque transmitting balls, respectively, the cage (5, 65, 95) being formed of carbon steel including 0.41 to 0.51 mass % of C, 0.10 to 0.35 mass % of Si, 0.60 to 0.90 mass % of Mn, 0.005 to 0.030 mass % of P, and 0.002 to 0.035 mass % of S, with the balance being Fe and an element inevitably remaining at the time of steelmaking and refining, the cage (5, 65, 95) being subjected to carburizing, quenching, and tempering as heat treatment, each of the plurality of pockets (20, 80, 110) having a side surface (23, 83, 113) finished after the heat treatment.

Abstract: Disclosed is a method of forming a thermal oxide film on a silicon single crystal wafer, which includes throwing the silicon single wafer into a heat treatment furnace; elevating temperature of the heat treatment furnace up to a temperature T1 where a thermal oxide film is formed to form a thermal oxide film having a thickness d1; subsequently lowering the temperature of the heat treatment furnace down to a temperature lower than the temperature T1; and thereafter elevating the temperature of the heat treatment furnace up to a temperature T2 higher than the temperature T1 to additionally form a thermal oxide film having a thickness d2 thicker than the thickness d1. Thus, there is provided a thermal oxide film formation method to suppress occurrence of slip dislocation and/or crack of the silicon single wafer during formation of the thermal oxide film.

Abstract: A secondary battery includes a cathode, an anode containing an anode active material, and an electrolytic solution. The anode active material contains tin, iron, cobalt, carbon, and titanium as an element. In the anode active material, a carbon content is from 9 mass % to 30 mass % both inclusive, a ratio of cobalt to total of iron and cobalt is from 10 mass % to 80 mass % both inclusive, a ratio of the total of iron and cobalt to total of tin, iron, and cobalt is from 11.3 mass % to 26.3 mass % both inclusive, a titanium content is from 0.5 mass % to 8 mass % both inclusive, and half-width of diffraction peak obtained by X-ray diffraction (peak obtained where diffraction angle of 2? is from 34 deg to 37 deg both inclusive) is 1 deg or more.

Abstract: The invention provides a coating film having excellent adhesion, even without a chemical conversion film treatment being carried out as an undercoat treatment, and a metal automotive part having the coating film. A powder is deposited by powder-coating onto the surface of a metal automotive part that has been quenched after forging, and tempering of the metal automotive part and bake-hardening of the deposited powder are carried out simultaneously, thereby forming a skin film on the surface of the metal automotive part. The surface of the metal automotive part before the powder is powder-coated thereon is a work-hardened basis material surface that has been not subjected to a chemical conversion filming treatment.

Abstract: Provided is a cage (5, 65, 95) for a constant velocity universal joint, which is formed into a ring shape with a substantially uniform thickness, including a plurality of pockets (20, 80, 110) formed in a circumferential direction of the cage (5, 65, 95), for receiving torque transmitting balls, respectively, the cage (5, 65, 95) being formed of carbon steel including 0.41 to 0.51 mass % of C, 0.10 to 0.35 mass % of Si, 0.60 to 0.90 mass % of Mn, 0.005 to 0.030 mass % of P, and 0.002 to 0.035 mass % of S, with the balance being Fe and an element inevitably remaining at the time of steelmaking and refining, the cage (5, 65, 95) being subjected to carburizing, quenching, and tempering as heat treatment, each of the plurality of pockets (20, 80, 110) having a side surface (23, 83, 113) finished after the heat treatment.

Abstract: A fixed type constant velocity universal joint comprises a ball and a lubricating grease sealed therein. A surface roughness of the ball is set to Ra 0.15 ?m or less and a surface roughness of a counterpart surface on which the ball rolls is set to be higher than the surface roughness of the ball. An additive composition of the lubricating grease comprises a base oil, a diurea compound, molybdenum dithiocarbamate, zinc dialkyldithiophosphate, melamine cyanurate, molybdenum disulfide, and calcium salt of alkylaromatic sulfonic acid.

Abstract: An eight-ball fixed type constant velocity universal joint of an undercut free type is capable of increasing a torque capacity at high operating angles while securing durability at low operating angles. When a distance between a center of a track groove and a center of a ball is denoted by Rt, and when an axial distance between the center of the track groove and a joint center plane is denoted by F, a ratio R1 of F to Rt is set to fall within a range of 0.061?R1?0.087. When a radial offset amount, which is a distance between the center of the track groove and a joint center axial line is denoted by fr, a ratio R3 of fr to Rt is set to fall within a range of 0.07?R3?0.19. When an effective cured-layer depth with Hv 513 is denoted by Di and the diameter of the ball is denoted by d, a bottom surface of a track groove of an inner joint member includes a cured layer with an effective cured-layer depth ratio Di/d of at least 0.111 or more.

Abstract: An outer member of a constant velocity universal joint suppresses occurrences of cracking in a joining portion and has stable quality. The outer member includes a cup section having track grooves formed therein, and a shaft section having one end coupled to a bottom portion of the cup section. By joining members having different carbon contents and performing induction hardening on the members, a hardening heat-affected portion affected by the induction hardening, a hardening heat-unaffected portion unaffected by the induction hardening, a joining heat-affected portion affected by heat generated during the joining, and a joining heat-unaffected portion unaffected by the heat generated during the joining are formed. A martensitic structure is eliminated from the hardening heat-unaffected portion of the high carbon content member and is the joining heat-affected portion at an end portion including a joining end surface that is to be joined to the low carbon content member.

Abstract: A shaft part is formed with a rolling groove (5) on which rolling elements (4) roll. At least the rolling groove (5) is induction hardened with no generation of black colored oxidized scale after the induction hardening. A surface of the induction hardened rolling groove (5) is used “as is” as a rolling surface. The surface roughness Ra of the induction hardened surface “as is” of the rolling groove (5) is less than 1.0. The ratio of effective hardened depth of a hardened layer is between 0.15 and 0.45.

Abstract: A fixed type constant velocity universal joint of an eight-ball undercut-free type has improved torque capacity at high operating angle while ensuring durability at low operating angle. Centers of a track groove (32) of an outer joint member and a track groove (35) of an inner joint member are respectively separated from a center plane (P) toward axially different sides, and are offset away from a joint center axis (X) to a radially opposite side relative to grooves (35). When Rt represents a distance between a center of a ball (37) and the center of groove (32), and F represents an axial distance between plane (P) and the center of groove (32), a ratio R1 between F and Rt is 0.061?R1?0.087. When fr represents a radial offset amount as a distance between axis (X) and the center of groove (32), a ratio R3 between fr and Rt is 0.07?R3?0.19.

Abstract: Disclosed is a method of forming a thermal oxide film on a silicon single crystal wafer, which includes throwing the silicon single wafer into a heat treatment furnace; elevating temperature of the heat treatment furnace up to a temperature T1 where a thermal oxide film is formed to form a thermal oxide film having a thickness d1; subsequently lowering the temperature of the heat treatment furnace down to a temperature lower than the temperature T1; and thereafter elevating the temperature of the heat treatment furnace up to a temperature T2 higher than the temperature T1 to additionally form a thermal oxide film having a thickness d2 thicker than the thickness d1. Thus, there is provided a thermal oxide film formation method to suppress occurrence of slip dislocation and/or crack of the silicon single wafer during formation of the thermal oxide film.

Abstract: A power transmission shaft includes a torque-transmission teeth portion formed on an outer peripheral surface on an end portion side, and a smooth portion formed on the outer peripheral surface adjacent to the torque-transmission teeth portion so as to have a stepwise reduced diameter. A ratio of a minimum diameter of the smooth portion to a minimum diameter of the torque-transmission teeth portion is set to 0.9 or more and 1.02 or less. Further, the torque-transmission teeth portion and the smooth portion undergo heat treatment so as to form a heat-treated hardened layer. The heat-treated hardened layer is formed to increase in depth from a side of the torque transmission teeth portion to a side of the smooth portion. At least a minimum diameter portion of the smooth portion undergoes full hardening.