Abstract: A charge amplifier that converts a charge signal to a voltage signal includes: a first conductive member through which the charge signal propagates; a second conductive member that is provided along at least a portion of the first conductive member; an insulating member provided between the first conductive member and the second conductive member; a potential controlling voltage signal output circuit that is connected to the second conductive member, and is configured to supply a potential controlling voltage signal to the second conductive member; and an integrating circuit that includes an input terminal and an output terminal, the input terminal being connected to the first conductive member, and is configured to output the voltage signal from the output terminal.

Abstract: An integrated circuit device includes a terminal, a switch circuit, an amplifier circuit, a voltage boosting circuit, and a control circuit. The terminal is connected to a driving signal line of a driving circuit that drives an actuator of a liquid droplet ejection head. One end of the switch circuit is connected to the terminal. The amplifier circuit receives an output signal from the other end of the switch circuit, and amplifies an induced voltage of the actuator after the actuator having been driven. The voltage boosting circuit generates a boosted voltage for level-shifting a switching signal of the switch circuit based on the step-up clock signal.

Abstract: A charge amplifier that converts a charge signal to a voltage signal includes: a first conductive member through which the charge signal propagates; a second conductive member that is provided along at least a portion of the first conductive member; an insulating member provided between the first conductive member and the second conductive member; a potential controlling voltage signal output circuit that is connected to the second conductive member, and is configured to supply a potential controlling voltage signal to the second conductive member; and an integrating circuit that includes an input terminal and an output terminal, the input terminal being connected to the first conductive member, and is configured to output the voltage signal from the output terminal.

Abstract: An integrated circuit device includes a terminal, a switch circuit, an amplifier circuit, a voltage boosting circuit, and a control circuit. The terminal is connected to a driving signal line of a driving circuit that drives an actuator of a liquid droplet ejection head. One end of the switch circuit is connected to the terminal. The amplifier circuit receives an output signal from the other end of the switch circuit, and amplifies an induced voltage of the actuator after the actuator having been driven. The voltage boosting circuit generates a boosted voltage for level-shifting a switching signal of the switch circuit based on the step-up clock signal.

Abstract: A sensor unit capable of detecting a step-on operation on a foot pedal with high accuracy is configured without inviting cost increase. The unit includes a linear movement member to which an arcuate motion at time of a step-on operation on a foot pedal disposed in a vehicle cabin space is transmitted as being converted into a linear motion by a converter mechanism, and a detection section detecting the linear motion of the linear movement member inside the vehicle cabin space.

Abstract: A substrate voltage control circuit comprising: a first connection terminal; a second connection terminal; a substrate voltage control terminal; a first switch having a first source, a first drain, and a first gate, the first source being connected to the substrate voltage control terminal, the first drain being connected to the first connection terminal; a first resistor connected between the first gate and the second connection terminal; a second switch having a second source, a second drain, and a second gate, the second source being connected to the substrate voltage control terminal, the second drain being connected to the second connection terminal; and a second resistor connected between the second gate and the first connection terminal.

Abstract: A foreign object detection device in the present disclosure includes: a set sensor coil; and a determination device that detects a foreign object, based on voltage of the set sensor coil. A first sensor coil group in the set sensor coil includes unit sensor coils wound in a first winding direction and unit sensor coils wound in a second winding direction opposite to the first winding direction, these coils wound in the respective directions being electrically connected in series. Each unit sensor coil includes a coil conductor prescribing its external shape. Coil conductors are continuously and electrically connected in series. A part or the whole of the coil conductor forming the unit sensor coil in the first winding direction is a part or the whole of the coil conductor forming the unit sensor coil in the second winding direction.

Abstract: Provided is a rotation detection sensor and a resin molding die for the sensor, with which manufacturing cost can be readily reduced. The sensor includes an assembly type sensor body having a sensor element and a cable electrically connected to the sensor element. A curved portion is formed at a portion of the cable extending from the sensor body. There is provided a resin sheath portion molded to sheath a portion of the sensor body and the curved portion integrally with resin.

Abstract: A foreign matter detection device is mounted on a non-contact power supply system that supplies power in a non-contact manner from a power supply unit to a power reception unit. The foreign matter detection device includes a magnetic field sensor and a magnetic field generation unit. The magnetic field sensor detects an amount of magnetic flux that changes due to foreign matter existing between the power supply unit and the power reception unit. The magnetic field generation unit is provided separately from the power supply unit and the power reception unit, includes a magnetic field generation coil unit, and generates a magnetic field for driving the magnetic field sensor.

Abstract: A substrate voltage control circuit comprising: a first connection terminal; a second connection terminal; a substrate voltage control terminal; a first switch having a first source, a first drain, and a first gate, the first source being connected to the substrate voltage control terminal, the first drain being connected to the first connection terminal; a first resistor connected between the first gate and the second connection terminal; a second switch having a second source, a second drain, and a second gate, the second source being connected to the substrate voltage control terminal, the second drain being connected to the second connection terminal; and a second resistor connected between the second gate and the first connection terminal.

Abstract: A foreign matter detection device is mounted on a non-contact power supply system that supplies power in a non-contact manner from a power supply unit to a power reception unit. The foreign matter detection device includes a magnetic field sensor and a magnetic field generation unit. The magnetic field sensor detects an amount of magnetic flux that changes due to foreign matter existing between the power supply unit and the power reception unit. The magnetic field generation unit is provided separately from the power supply unit and the power reception unit, includes a magnetic field generation coil unit, and generates a magnetic field for driving the magnetic field sensor.

Abstract: A foreign object detection device in the present disclosure includes: a set sensor coil; and a determination device that detects a foreign object, based on voltage of the set sensor coil. A first sensor coil group in the set sensor coil includes unit sensor coils wound in a first winding direction and unit sensor coils wound in a second winding direction opposite to the first winding direction, these coils wound in the respective directions being electrically connected in series. Each unit sensor coil includes a coil conductor prescribing its external shape. Coil conductors are continuously and electrically connected in series. A part or the whole of the coil conductor forming the unit sensor coil in the first winding direction is a part or the whole of the coil conductor forming the unit sensor coil in the second winding direction.

Abstract: Provided is a sensor capable of holding a sensing element at a position of good sensitivity without requiring filling of the case with resin. The sensor includes a sensing element, a case accommodating the sensing element and having a detecting face for the sensing element in an outer face thereof, a holder accommodated inside the case together with the sensing element and pressing the sensing element toward the detecting face and a cable electrically connected to the sensing element. At least one of the holder and the case includes a contact portion deformable by a pressing force generated when the sensing element is pressed toward the detecting face.

Abstract: A rotation sensor includes: a first detection element disposed to oppose an outer circumferential surface of a rotating body or one end surface in the shaft direction of the rotating body different from that on a shaft line of the rotating body, and detecting magnetic flux density; a storage portion storing the detection result of the first detection element; a second detection element disposed to be separated from the first detection element only by a predetermined distance, and detecting the magnetic flux density; a determination threshold value setting portion setting a determination threshold value based on a difference between maximum and minimum values in the detection result; and a signal output portion outputting a signal indicating the rotation of the rotating body when the detection result of the second detection element reaches the determination threshold value.

Abstract: A sensor unit with a sensing surface molded properly on an outer surface of a sensor receiving part is provided. The sensor unit includes a resin casing formed with an annular fixing member, and a sensor receiving part formed in the casing for receiving a sensor housed. A sensing surface that faces a target object is formed within the sensor receiving part. A resin charging position in molding the casing is set to a position deviated circumferentially from a central position in a width of the sensing surface. In particular, resin is charged into the fixing member from a gate arranged on an extending line of a first through-bore formed in a position corresponding to the charging position.

Abstract: Provided is a rotation detection sensor and a resin molding die for the sensor, with which manufacturing cost can be readily reduced. The sensor includes an assembly type sensor body having a sensor element and a cable electrically connected to the sensor element. A curved portion is formed at a portion of the cable extending from the sensor body. There is provided a resin sheath portion molded to sheath a portion of the sensor body and the curved portion integrally with resin.

Abstract: A silicon carbide vertical MOSFET having low ON-resistance and high blocking voltage is provided. For this, a first deposition film (2) of low concentration silicon carbide of a first conductivity type is formed on the surface of a high concentration silicon carbide substrate (1) of a first conductivity type. Formed on the first deposition film (2) is a second deposition film (31) that comprises a high concentration gate region of a second conductivity type, with a first region removed selectively. A third deposition film (32) formed on the second deposition film, which comprises a second region that is wider than the selectively removed first region, a high concentration source region (5) of a first conductivity type and a low concentration gate region (11) of a second conductivity type. A low concentration base region (4) of a first conductivity type is formed in contact with the first deposition film (2) in the first and second regions.

Abstract: A sensor unit with a sensing surface molded properly on an outer surface of a sensor receiving part is provided. The sensor unit includes a resin casing formed with an annular fixing member, and a sensor receiving part formed in the casing for receiving a sensor housed. A sensing surface that faces a target object is formed within the sensor receiving part. A resin charging position in molding the casing is set to a position deviated circumferentially from a central position in a width of the sensing surface. In particular, resin is charged into the fixing member from a gate arranged on an extending line of a first through-bore formed in a position corresponding to the charging position.

Abstract: A silicon carbide vertical MOSFET having low ON-resistance and high blocking voltage. A first deposition film of low concentration silicon carbide of a first conductivity type is formed on the surface of a high concentration silicon carbide substrate of a first conductivity type. Formed on the first deposition film is a second deposition film that includes a high concentration gate region of a second conductivity type, with a first region removed selectively. A third deposition film is formed on the second deposition film, which includes a second region that is wider than the selectively removed first region, a high concentration source region of a first conductivity type, and a low concentration gate region of a second conductivity type. A low concentration base region of a first conductivity type is formed in contact with the first deposition film in the first and second regions.

Abstract: A semiconductor element including an MISFET exhibits diode characteristics in a reverse direction through an epitaxial channel layer. The semiconductor element includes: a silicon carbide semiconductor substrate of a first conductivity type, semiconductor layer of the first conductivity type, body region of a second conductivity type, source region of the first conductivity type, epitaxial channel layer in contact with the body region, source electrode, gate insulating film, gate electrode and drain electrode. If the voltage applied to the gate electrode is smaller than a threshold voltage, the semiconductor element functions as a diode wherein current flows from the source electrode to the drain electrode through the epitaxial channel layer. The absolute value of the turn-on voltage of this diode is smaller than the turn-on voltage of a body diode that is formed of the body region and the first silicon carbide semiconductor layer.