Abstract: When a primary computer is taken over to a secondary computer in a redundancy configuration computer system where booting is performed via a storage area network (SAN), a management server delivers an information collection/setting program to the secondary computer before the user's operating system of the secondary computer is started. This program assigns a unique ID (World Wide Name), assigned to the fibre channel port of the primary computer, to the fibre channel port of the secondary computer to allow a software image to be taken over from the primary computer to the secondary computer.

Abstract: When a primary computer is taken over to a secondary computer in a redundancy configuration computer system where booting is performed via a storage area network (SAN), a management server delivers an information collection/setting program to the secondary computer before the user's operating system of the secondary computer is started. This program assigns a unique ID (World Wide Name), assigned to the fibre channel port of the primary computer, to the fibre channel port of the secondary computer to allow a software image to be taken over from the primary computer to the secondary computer.

Abstract: A silicon carbide vertical MOSFET having low ON-resistance and high blocking voltage. A first deposition film of low concentration silicon carbide of a first conductivity type is formed on the surface of a high concentration silicon carbide substrate of a first conductivity type. Formed on the first deposition film is a second deposition film that includes a high concentration gate region of a second conductivity type, with a first region removed selectively. A third deposition film is formed on the second deposition film, which includes a second region that is wider than the selectively removed first region, a high concentration source region of a first conductivity type, and a low concentration gate region of a second conductivity type. A low concentration base region of a first conductivity type is formed in contact with the first deposition film in the first and second regions.

Abstract: An information service providing method for providing an information service is provided, wherein the method includes the steps of: receiving a customer's request for the information service to be provided with; deciding the customer's utilization qualification with respect to the contents of the information service; determining the contents that is available to the customer according to the customer's utilization qualification among the contents of the information service that the customer requests to be provided with; and providing the customer with the determined contents of the information service.

Abstract: In a semiconductor device using a silicon carbide substrate (1), the object of the present invention is to provide a method of manufacturing a semiconductor device that is a buried channel region type transistor having hot-carrier resistance, high punch-through resistance and high channel mobility. This is achieved by using a method of manufacturing a buried channel type transistor using a P-type silicon carbide substrate that includes a step of forming a buried channel region, a source region and a drain region, a step of forming a gate insulation layer after the step of forming the buried channel region, source region and drain region, and a step of exposing the gate insulation layer to an atmosphere containing water vapor at a temperature of 500° C. or more after the step of forming the gate insulation layer. The gate insulation layer is formed by a thermal oxidation method using dry oxygen.

Abstract: An MIS transistor that uses a silicon carbide substrate has a buried channel structure. The surface orientation of the silicon carbide substrate is optimized so that the device does not assume a normally on state, has good hot-carrier endurance and punch-through endurance, and high channel mobility. In particular, a P-type silicon carbide semiconductor substrate is used to form a buried channel region. To achieve high mobility, the depth at which the buried channel region is formed is optimized, and the ratio between buried channel region junction depth (Lbc) source and drain region junction depth (Xj) is made to be within 0.2 to 1.0. The device can be formed on any surface of a hexagonal or rhombohedral or a (110) surface of a cubic system silicon carbide crystal, and provides a particularly good effect when formed on the (11-20) surface.

Abstract: In a semiconductor device using a silicon carbide substrate (1), the object of the present invention is to provide a method of manufacturing a semiconductor device that is a buried channel region type transistor having hot-carrier resistance, high punch-through resistance and high channel mobility. This is achieved by using a method of manufacturing a buried channel type transistor using a P-type silicon carbide substrate that includes a step of forming a buried channel region, a source region and a drain region, a step of forming a gate insulation layer after the step of forming the buried channel region, source region and drain region, and a step of exposing the gate insulation layer to an atmosphere containing water vapor at a temperature of 500° C. or more after the step of forming the gate insulation layer. The gate insulation layer is formed by a thermal oxidation method using dry oxygen.

Abstract: In a semiconductor device having a fuse and an etching stopper film covering the fuse, an optical window exposing the etching stopper film and a contact hole exposing a conductor pattern are formed simultaneously. By applying a dry etching process further to the etching stopper film, an insulation film covering the fuse is exposed in the optical window.

Abstract: In a semiconductor device having a fuse and an etching stopper film covering the fuse, an optical window exposing the etching stopper film and a contact hole exposing a conductor pattern are formed simultaneously. By applying a dry etching process further to the etching stopper film, an insulation film covering the fuse is exposed in the optical window.

Abstract: An MIS transistor that uses a silicon carbide substrate has a buried channel structure. The surface orientation of the silicon carbide substrate is optimized so that the device does not assume a normally on state, has good hot-carrier endurance and punch-through endurance, and high channel mobility. In particular, a P-type silicon carbide semiconductor substrate is used to form a buried channel region. To achieve high mobility, the depth at which the buried channel region is formed is optimized, and the ratio between buried channel region junction depth (Lbc) source and drain region junction depth (Xj) is made to be within 0.2 to 1.0. The device can be formed on any surface of a hexagonal or rhombohedral or a (110) surface of a cubic system silicon carbide crystal, and provides a particularly good effect when formed on the (11-20) surface.

Abstract: The problem of the disclosed technique is to realize an automatic logic design supporting method and apparatus capable of laying out a circuit of logic synthesis result so as to be able to satisfy delay constraints without changing the logic structure.