Patents by Inventor Kazuhiro Bessho

Kazuhiro Bessho has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8760884
    Abstract: The present disclosure provides a portable information apparatus, including, an apparatus main body, an incidental article mounted on the apparatus main body when the portable information apparatus is used, a solid-state magnetic memory provided at a portion of the apparatus main body at which the incidental article is mounted and adapted to retain information in accordance with a magnetization state of a magnetic material, and a magnetic shield provided on the incidental article including a portion opposed to the solid-state magnetic memory when the incidental article is mounted on the apparatus main body.
    Type: Grant
    Filed: May 31, 2011
    Date of Patent: June 24, 2014
    Assignee: Sony Corporation
    Inventors: Hiroyuki Ohmori, Masanori Hosomi, Kazuhiro Bessho, Yutaka Higo, Kazutaka Yamane, Hiroyuki Uchida
  • Publication number: 20140169087
    Abstract: A memory element has a layered structure, including a memory layer that has magnetization perpendicular to a film face in which a magnetization direction is changed depending on information, and includes a Co—Fe—B magnetic layer, the magnetization direction being changed by applying a current in a lamination direction of the layered structure to record the information in the memory layer, a magnetization-fixed layer having magnetization perpendicular to a film face that becomes a base of the information stored in the memory layer, and an intermediate layer that is formed of a non-magnetic material and is provided between the memory layer and the magnetization-fixed layer, a first oxide layer and a second oxide layer.
    Type: Application
    Filed: February 20, 2014
    Publication date: June 19, 2014
    Applicant: SONY CORPORATION
    Inventors: Kazutaka Yamane, Masanori Hosomi, Hiroyuki Ohmori, Kazuhiro Bessho, Yutaka Higo, Tetsuya Asayama, Hiroyuki Uchida
  • Patent number: 8750035
    Abstract: There is disclosed a memory element including a memory layer that maintains information through the magnetization state of a magnetic material, a magnetization-fixed layer with a magnetization that is a reference of information stored in the memory layer, and an intermediate layer that is formed of a non-magnetic material and is provided between the memory layer and the magnetization-fixed layer. The storing of the information is performed by inverting the magnetization of the memory layer by using a spin torque magnetization inversion occurring according to a current flowing in the lamination direction of a layered structure having the memory layer, the intermediate layer, and the magnetization-fixed layer, the memory layer includes an alloy region containing at least one of Fe and Co, and a magnitude of an effective diamagnetic field which the memory layer receives during magnetization inversion thereof is smaller than the saturated magnetization amount of the memory layer.
    Type: Grant
    Filed: August 25, 2011
    Date of Patent: June 10, 2014
    Assignee: Sony Corporation
    Inventors: Kazuhiro Bessho, Masanori Hosomi, Hiroyuki Ohmori, Yutaka Higo, Kazutaka Yamane, Hiroyuki Uchida
  • Patent number: 8742519
    Abstract: Disclosed herein is a magnetic storage element including: a reference layer configured to have a magnetization direction fixed to a predetermined direction; a recording layer configured to have a magnetization direction that changes due to spin injection in a direction corresponding to recording information; an intermediate layer configured to separate the recording layer from the reference layer; and a heat generator configured to heat the recording layer. A material of the recording layer is such a magnetic material that magnetization at 150° C. is at least 50% of magnetization at a room temperature and magnetization at a temperature in a range from 150° C. to 200° C. is in a range from 10% to 80% of magnetization at a room temperature.
    Type: Grant
    Filed: June 1, 2011
    Date of Patent: June 3, 2014
    Assignee: Sony Corporation
    Inventors: Kazutaka Yamane, Masanori Hosomi, Hiroyuki Ohmori, Kazuhiro Bessho, Yutaka Higo, Hiroyuki Uchida
  • Patent number: 8743594
    Abstract: There is disclosed a memory element including a memory layer that has a magnetization perpendicular to a film face and a magnetization direction thereof varies corresponding to information; a magnetization-fixed layer that has a magnetization that is perpendicular to the film face; and an insulating layer that is provided between the memory layer and the magnetization-fixed layer, wherein an electron that is spin-polarized is injected in a lamination direction of a layered structure, and thereby the magnetization direction of the memory layer varies and a recording of information is performed with respect to the memory layer, a magnitude of an effective diamagnetic field which the memory layer receives is smaller than a saturated magnetization amount of the memory layer, and a Ta film is formed in such a manner that comes into contact with a face, which is opposite to the insulating layer side, of the magnetization-fixed layer.
    Type: Grant
    Filed: September 7, 2011
    Date of Patent: June 3, 2014
    Assignee: Sony Corporation
    Inventors: Hiroyuki Uchida, Masanori Hosomi, Hiroyuki Ohmori, Kazuhiro Bessho, Yutaka Higo, Kazutaka Yamane
  • Patent number: 8729649
    Abstract: A magnetic memory device including a memory layer having a vertical magnetization on the layer surface, of which the direction of magnetization is changed according to information; and a reference layer provided against the memory layer, and being a basis of information while having a vertical magnetization on the layer surface, wherein the memory device memorizes the information by reversing the magnetization of the memory layer by a spin torque generated when a current flows between layers made from the memory layer, the nonmagnetization layer and the reference layer, and a coercive force of the memory layer at a memorization temperature is 0.7 times or less than a coercive force at room temperature, and a heat conductivity of a center portion of an electrode formed on one side of the memory layer in the direction of the layer surface is lower than a heat conductivity of surroundings thereof.
    Type: Grant
    Filed: July 25, 2013
    Date of Patent: May 20, 2014
    Assignee: Sony Corporation
    Inventors: Hiroyuki Ohmori, Masanori Hosomi, Kazuhiro Bessho, Yutaka Higo, Kazutaka Yamane, Hiroyuki Uchida
  • Patent number: 8699264
    Abstract: A memory element has a layered structure, including a memory layer that has magnetization perpendicular to a film face in which a magnetization direction is changed depending on information, and includes a Co—Fe—B magnetic layer, the magnetization direction being changed by applying a current in a lamination direction of the layered structure to record the information in the memory layer, a magnetization-fixed layer having magnetization perpendicular to a film face that becomes a base of the information stored in the memory layer, and an intermediate layer that is formed of a non-magnetic material and is provided between the memory layer and the magnetization-fixed layer, a first oxide layer and a second oxide layer.
    Type: Grant
    Filed: November 19, 2012
    Date of Patent: April 15, 2014
    Assignee: Sony Corporation
    Inventors: Kazutaka Yamane, Masanori Hosomi, Hiroyuki Ohmori, Kazuhiro Bessho, Yutaka Higo, Tetsuya Asayama, Hiroyuki Uchida
  • Patent number: 8692341
    Abstract: A storage element includes: a storage layer which has magnetization perpendicular to a film surface, the direction of the magnetization being changed in accordance with information; a magnetization fixed layer which has magnetization perpendicular to a film surface used as a base of information stored in the storage layer; and an insulating layer of a nonmagnetic substance provided between the storage layer and the magnetization fixed layer. In the storage element described above, the magnetization of the storage layer is reversed using a spin torque magnetization reversal generated by a current flowing in a lamination direction of a layer structure including the storage layer, the insulating layer, and the magnetization fixed layer to store information, the storage layer is directly provided with a layer at a side opposite to the insulating layer, and this layer includes a conductive oxide.
    Type: Grant
    Filed: December 21, 2011
    Date of Patent: April 8, 2014
    Assignee: Sony Corporation
    Inventors: Kazuhiro Bessho, Masanori Hosomi, Hiroyuki Ohmori, Yutaka Higo, Kazutaka Yamane, Hiroyuki Uchida, Tetsuya Asayama
  • Patent number: 8693239
    Abstract: There is disclosed a memory element including a memory layer that has a magnetization perpendicular to a film face and a magnetization direction thereof varies corresponding to information; a magnetization-fixed layer that has a magnetization that is perpendicular to the film face; and an insulating layer that is provided between the memory layer and the magnetization-fixed layer, wherein the memory layer has a lamination structure of a Co—Fe—B layer and an element belonging to any one of 1A group, 2A group, 3A group, 5A group, or 6A group, an electron that is spin-polarized is injected in a lamination direction of a layered structure, and thereby the magnetization direction of the memory layer varies and a recording of information is performed with respect to the memory layer, a magnitude of an effective diamagnetic field which the memory layer receives is smaller than a saturated magnetization amount of the memory layer.
    Type: Grant
    Filed: September 7, 2011
    Date of Patent: April 8, 2014
    Assignee: Sony Corporation
    Inventors: Masanori Hosomi, Kazuhiro Bessho, Hiroyuki Ohmori, Yutaka Higo, Kazutaka Yamane, Hiroyuki Uchida
  • Publication number: 20140042570
    Abstract: A storage element including a storage layer configured to hold information by use of a magnetization state of a magnetic material, with a pinned magnetization layer being provided on one side of the storage layer, with a tunnel insulation layer, and with the direction of magnetization of the storage layer being changed through injection of spin polarized electrons by passing a current in the lamination direction, so as to record information in the storage layer, wherein a spin barrier layer configured to restrain diffusion of the spin polarized electrons is provided on the side, opposite to the pinned magnetization layer, of the storage layer; and the spin barrier layer includes at least one material selected from the group composing of oxides, nitrides, and fluorides.
    Type: Application
    Filed: October 3, 2013
    Publication date: February 13, 2014
    Applicant: Sony Corporation
    Inventors: Yutaka Higo, Masanori Hosomi, Kazuhiro Bessho, Tetsuya Yamamoto, Hiroyuki Ohmori, Kazutaka Yamane, Yuki Oishi, Hiroshi Kano
  • Publication number: 20140042573
    Abstract: There is disclosed a memory element including a layered structure including a memory layer that has a magnetization perpendicular to a film face; a magnetization-fixed layer; and an insulating layer provided between the memory layer. An electron that is spin-polarized is injected in a lamination direction of a layered structure, a magnitude of an effective diamagnetic field which the memory layer receives is smaller than a saturated magnetization amount of the memory layer, in regard to the insulating layer that comes into contact with the memory layer, and the other side layer with which the memory layer comes into contact at a side opposite to the insulating layer, at least an interface that comes into contact with the memory layer is formed of an oxide film, and the memory layer includes at least one of non-magnetic metal and oxide in addition to a Co—Fe—B magnetic layer.
    Type: Application
    Filed: October 16, 2013
    Publication date: February 13, 2014
    Applicant: Sony Corporation
    Inventors: Kazutaka Yamane, Masanori Hosomi, Hiroyuki Ohmori, Kazuhiro Bessho, Yutaka Higo, Hiroyuki Uchida
  • Patent number: 8637947
    Abstract: A memory element includes a layered structure and a negative thermal expansion material layer. The layered structure includes a memory layer, a magnetization-fixed layer, and an intermediate layer. The memory layer has magnetization perpendicular to a film face in which a magnetization direction is changed depending on information, and includes a magnetic layer having a positive magnetostriction constant. The magnetization direction is changed by applying a current in a lamination direction of the layered structure to record the information in the memory layer. The magnetization-fixed layer has magnetization perpendicular to a film face that becomes a base of the information stored in the memory layer. The intermediate layer is formed of a non-magnetic material and is provided between the memory layer and the magnetization-fixed layer.
    Type: Grant
    Filed: November 26, 2012
    Date of Patent: January 28, 2014
    Assignee: Sony Corporation
    Inventors: Kazutaka Yamane, Masanori Hosomi, Hiroyuki Ohmori, Kazuhiro Bessho, Yutaka Higo, Tetsuya Asayama, Hiroyuki Uchida
  • Patent number: 8625342
    Abstract: A storage element includes: a storage layer which retains information by a magnetization state of a magnetic substance; a magnetization pinned layer having magnetization which is used as the basis of the information stored in the storage layer; and an interlayer of a non-magnetic substance provided between the storage layer and the magnetization pinned layer. The storage element is configured to store information by reversing magnetization of the storage layer using spin torque magnetization reversal generated by a current passing in a laminate direction of a layer structure including the storage layer, the interlayer, and the magnetization pinned layer, and when the saturation magnetization of the storage layer and the thickness thereof are represented by Ms (emu/cc) and t (nm), respectively, (1489/Ms)?0.593<t<(6820/Ms)?1.55 holds.
    Type: Grant
    Filed: May 1, 2012
    Date of Patent: January 7, 2014
    Assignee: Sony Corporation
    Inventors: Yutaka Higo, Masanori Hosomi, Hiroyuki Ohmori, Kazuhiro Bessho, Tetsuya Asayama, Kazutaka Yamane, Hiroyuki Uchida
  • Publication number: 20140001587
    Abstract: A storage element including a storage layer configured to hold information by use of a magnetization state of a magnetic material, with a pinned magnetization layer being provided on one side of the storage layer, with a tunnel insulation layer, and with the direction of magnetization of the storage layer being changed through injection of spin polarized electrons by passing a current in the lamination direction, so as to record information in the storage layer, wherein a spin barrier layer configured to restrain diffusion of the spin polarized electrons is provided on the side, opposite to the pinned magnetization layer, of the storage layer; and the spin barrier layer includes at least one material selected from the group composing of oxides, nitrides, and fluorides.
    Type: Application
    Filed: September 4, 2013
    Publication date: January 2, 2014
    Applicant: Sony Corporation
    Inventors: Yutaka Higo, Masanori Hosomi, Kazuhiro Bessho, Tetsuya Yamamoto, Hiroyuki Ohmori, Kazutaka Yamane, Yuki Oishi, Hiroshi Kano
  • Patent number: 8611139
    Abstract: There is disclosed a memory element including a layered structure including a memory layer that has a magnetization perpendicular to a film face; a magnetization-fixed layer; and an insulating layer provided between the memory layer. An electron that is spin-polarized is injected in a lamination direction of a layered structure, a magnitude of an effective diamagnetic field which the memory layer receives is smaller than a saturated magnetization amount of the memory layer, in regard to the insulating layer that comes into contact with the memory layer, and the other side layer with which the memory layer comes into contact at a side opposite to the insulating layer, at least an interface that comes into contact with the memory layer is formed of an oxide film, and the memory layer includes at least one of non-magnetic metal and oxide in addition to a Co—Fe—B magnetic layer.
    Type: Grant
    Filed: September 7, 2011
    Date of Patent: December 17, 2013
    Assignee: Sony Corporation
    Inventors: Kazutaka Yamane, Masanori Hosomi, Hiroyuki Ohmori, Kazuhiro Bessho, Yutaka Higo, Hiroyuki Uchida
  • Patent number: 8598671
    Abstract: Disclosed herein is a storage element, including: a storage layer configured to retain information based on a magnetization state of a magnetic material; and a magnetization pinned layer configured to be provided for the storage layer with intermediary of a tunnel barrier layer, wherein the tunnel barrier layer has a thickness not less than or equal to 0.1 nm to not more than or equal to 0.6 nm and interface roughness less than 0.5 nm, and information is stored in the storage layer through change in direction of magnetization of the storage layer by applying a current in a stacking direction and injecting a spin-polarized electron.
    Type: Grant
    Filed: June 17, 2011
    Date of Patent: December 3, 2013
    Assignee: Sony Corporation
    Inventors: Hiroyuki Uchida, Masanori Hosomi, Hiroyuki Ohmori, Kazuhiro Bessho, Yutaka Higo, Kazutaka Yamane
  • Publication number: 20130307100
    Abstract: A magnetic memory device including a memory layer having a vertical magnetization on the layer surface, of which the direction of magnetization is changed according to information; and a reference layer provided against the memory layer, and being a basis of information while having a vertical magnetization on the layer surface, wherein the memory device memorizes the information by reversing the magnetization of the memory layer by a spin torque generated when a current flows between layers made from the memory layer, the nonmagnetization layer and the reference layer, and a coercive force of the memory layer at a memorization temperature is 0.7 times or less than a coercive force at room temperature, and a heat conductivity of a center portion of an electrode formed on one side of the memory layer in the direction of the layer surface is lower than a heat conductivity of surroundings thereof.
    Type: Application
    Filed: July 25, 2013
    Publication date: November 21, 2013
    Applicant: Sony Corporation
    Inventors: Hiroyuki Ohmori, Masanori Hosomi, Kazuhiro Bessho, Yutaka Higo, Kazutaka Yamane, Hiroyuki Uchida
  • Publication number: 20130302913
    Abstract: A method of manufacturing a storage element by forming a magnetic layer; and forming a tunnel barrier layer on the magnetic layer, wherein, n the forming a tunnel barrier layer, the tunnel barrier layer is formed to a predetermined thickness in at least two steps in a divided manner.
    Type: Application
    Filed: June 20, 2013
    Publication date: November 14, 2013
    Inventors: Hiroyuki Uchida, Masanori Hosomi, Hiroyuki Ohmori, Kazuhiro Bessho, Yutaka Higo, Kazutaka Yamane
  • Patent number: 8575711
    Abstract: A storage element includes a storage layer configured to hold information by use of a magnetization state of a magnetic material, with a pinned magnetization layer being provided on one side of the storage layer, with a tunnel insulation layer, and with the direction of magnetization of the storage layer being changed through injection of spin polarized electrons by passing a current in the lamination direction, so as to record information in the storage layer, wherein a spin barrier layer configured to restrain diffusion of the spin polarized electrons is provided on the side, opposite to the pinned magnetization layer, of the storage layer; and the spin barrier layer includes at least one material selected from the group composing of oxides, nitrides, and fluorides.
    Type: Grant
    Filed: November 29, 2006
    Date of Patent: November 5, 2013
    Assignee: Sony Corporation
    Inventors: Yutaka Higo, Masanori Hosomi, Kazuhiro Bessho, Tetsuya Yamamoto, Hiroyuki Ohmori, Kazutaka Yamane, Yuki Oishi, Hiroshi Kano
  • Patent number: 8565013
    Abstract: A storage element includes a storage layer that stores information on the basis of a magnetization state of a magnetic material; a fixed magnetization layer that has a magnetization serving as a reference of the information stored in the storage layer; an interlayer that is formed of a nonmagnetic material and interposed between the storage layer and the fixed magnetization layer; a cap layer that is provided to be adjacent to the storage layer and opposite to the interlayer; and a metal cap layer that is provided to be adjacent to the cap layer and opposite to the storage layer.
    Type: Grant
    Filed: March 29, 2012
    Date of Patent: October 22, 2013
    Assignee: Sony Corporation
    Inventors: Kazuhiro Bessho, Masanori Hosomi, Hiroyuki Ohmori, Yutaka Higo, Kazutaka Yamane, Tetsuya Asayama, Hiroyuki Uchida