Abstract: There is provided a memory element including a memory layer that has magnetization perpendicular to a film face; a magnetization-fixed layer that has magnetization that is perpendicular to the film face; and an insulating layer that is provided between the memory layer and the magnetization-fixed layer, wherein an electron that is spin-polarized is injected in a lamination direction of a layered structure, and thereby the magnetization direction of the memory layer varies and a recording of information is performed, a magnitude of an effective diamagnetic field which the memory layer receives is smaller than a saturated magnetization amount of the memory layer, the insulating layer is formed of an oxide film, and the memory layer is formed of Co—Fe—B, a concentration of B is low in the vicinity of an interface with the insulating layer, and the concentration of B increases as it recedes from the insulating layer.

Abstract: A magnetic memory element includes a memory layer, a reference layer, and a spin-injection layer provided between the memory layer and the reference layer. The reference layer has a structure in which at least two CoPt layers containing 20 atomic % or more and 50 atomic % or less of Pt and having a thickness of 1 nm or more and 5 nm or less are stacked with a Ru layer provided therebetween. The thickness of the Ru layer is 0.45±0.05 nm or 0.9±0.1 nm. In addition, the axis of 3-fold crystal symmetry of the CoPt layers is oriented perpendicularly to the film surface. The reference layer includes a high spin polarization layer of 1.5 nm or less containing Co or Fe as a main component at an interface with the spin-injection layer.

Abstract: A magnetic memory device including a memory layer having a vertical magnetization on the layer surface, of which the direction of magnetization is changed according to information; and a reference layer provided against the memory layer, and being a basis of information while having a vertical magnetization on the layer surface, wherein the memory device memorizes the information by reversing the magnetization of the memory layer by a spin torque generated when a current flows between layers made from the memory layer, the nonmagnetization layer and the reference layer, and a coercive force of the memory layer at a memorization temperature is 0.7 times or less than a coercive force at room temperature, and a heat conductivity of a center portion of an electrode formed on one side of the memory layer in the direction of the layer surface is lower than a heat conductivity of surroundings thereof.

Abstract: Disclosed herein is a storage apparatus including a cell array configured to include storage devices arranged to form an array. Each of the storage device has: a storage layer for storing information as the state of magnetization of a magnetic substance; a fixed-magnetization layer having a fixed magnetization direction; and a tunnel insulation layer sandwiched between the storage layer and the fixed-magnetization layer. In an operation to write information on the storage layer, a write current is generated to flow in the layer-stacking direction of the storage layer and the fixed-magnetization layer in order to change the direction of the magnetization of the storage layer. The cell array is divided into a plurality of cell blocks. The thermal stability of the storage layer of any particular one of the storage devices has a value peculiar to the cell block including the particular storage device.

Abstract: Disclosed herein is a magnetic storage element including: a reference layer configured to have a magnetization direction fixed to a predetermined direction; a recording layer configured to have a magnetization direction that changes due to spin injection in a direction corresponding to recording information; an intermediate layer configured to separate the recording layer from the reference layer; and a heat generator configured to heat the recording layer. A material of the recording layer is such a magnetic material that magnetization at 150° C. is at least 50% of magnetization at a room temperature and magnetization at a temperature in a range from 150° C. to 200° C. is in a range from 10% to 80% of magnetization at a room temperature.

Abstract: The present disclosure provides a portable information apparatus, including, an apparatus main body, an incidental article mounted on the apparatus main body when the portable information apparatus is used, a solid-state magnetic memory provided at a portion of the apparatus main body at which the incidental article is mounted and adapted to retain information in accordance with a magnetization state of a magnetic material, and a magnetic shield provided on the incidental article including a portion opposed to the solid-state magnetic memory when the incidental article is mounted on the apparatus main body.

Abstract: A storage element includes: a storage layer configured to retain information based on a magnetization state of a magnetic material and include a perpendicular magnetization layer whose magnetization direction is in a direction perpendicular to a film plane, a non-magnetic layer, and a ferromagnetic layer that has an axis of easy magnetization along a direction in the film plane and has a magnetization direction inclined to a direction perpendicular to the film plane by an angle in a range from 15 degrees to 45 degrees, the storage layer being configured by stacking of the perpendicular magnetization layer and the ferromagnetic layer with intermediary of the non-magnetic layer and magnetic coupling between the perpendicular magnetization layer and the ferromagnetic layer; a magnetization pinned layer; and a non-magnetic intermediate layer.

Abstract: Disclosed herein is a storage element, including: a storage layer configured to retain information based on a magnetization state of a magnetic material; and a magnetization pinned layer configured to be provided for the storage layer with intermediary of a tunnel barrier layer, wherein the tunnel barrier layer has a thickness not less than or equal to 0.1 nm to not more than or equal to 0.6 nm and interface roughness less than 0.5 nm, and information is stored in the storage layer through change in direction of magnetization of the storage layer by applying a current in a stacking direction and injecting a spin-polarized electron.

Abstract: Disclosed herein is a method for driving a storage element that has a plurality of magnetic layers and performs recording by utilizing spin torque magnetization reversal, the method including applying a pulse voltage having reverse polarity of polarity of a recording pulse voltage in application of the recording pulse voltage to the storage element.

Abstract: Disclosed herein is a memory device, including: a memory element including a memory layer for holding therein information in accordance with a magnetization state of a magnetic material, a fixed magnetization layer which is provided on the memory layer through a non-magnetic layer and whose direction of a magnetization is fixed to a direction parallel with a film surface, and a magnetic layer which is provided on a side opposite to the fixed magnetization layer relative to the memory layer through a non-magnetic layer and whose direction of a magnetization is a direction vertical to the film surface; and a wiring through which a current is caused to flow through the memory element in a direction of lamination of the layers of the memory element.

Abstract: A memory includes: a plurality of memory devices, each including a tunnel magnetic resistance effect device containing a magnetization free layer in which a direction of magnetization can be reversed, a tunnel barrier layer including an insulating material, and a magnetization fixed layer provided with respect to the magnetization free layer via the tunnel barrier layer with a fixed direction of magnetization; a random access memory area in which information is recorded using the direction of magnetization of the magnetization free layer of the memory device; and a read only memory area in which information is recorded depending on whether there is breakdown of the tunnel barrier layer of the memory device or not.

Abstract: A random number generating device includes: a random number generator configured to have a plurality of random number generating elements that generate a random number in response to supply of a spin-injection current; and a temperature controller.

Abstract: Disclosed herein is an information storage element including: a word electrode includes a first magnetic material that is continuously formed and is electrically conductive; a non-magnetic film formed in contact with the first magnetic material of the word electrode; a second magnetic material connected to the first magnetic material via the non-magnetic film; a magnetization setting mechanism disposed near at least one end part of both end parts of the word electrode and sets direction of magnetization of the end part of the word electrode; a coercivity decreasing mechanism decreases coercivity of the second magnetic material; and an electrically-conductive bit electrode so formed as to serve also as the second magnetic material or be formed in parallel to the second magnetic material, the bit electrode being so continuously formed as to intersect with the word electrode.

Abstract: A memory includes: a memory device that has a memory layer storing data as a magnetization state of a magnetic body and a magnetization fixed layer whose direction of magnetization is fixed through a nonmagnetic layer interposed between the memory layer and the magnetization fixed layer and stores the data in the memory layer by changing a magnetization direction of the memory layer when a write current flowing in a stacked direction of the memory layer and the magnetization fixed layer is applied; and a voltage control unit that supplies the write current configured by independent pulse trains of two or more to the memory device by using a write voltage that is configured by independent pulse trains of two or more.

Abstract: A recording method of a nonvolatile memory including a recording circuit that electrically performs recording of information for an information memory device having a resistance change connected to a power supply for information recording, includes the steps of: recording information in a low-resistance state by the recording circuit under a condition that an output impedance of the recording circuit for the information memory device is larger than a resistance value in the low-resistance state of the information memory device; and recording information in a high-resistance state by the recording circuit under a condition that an output impedance of the recording circuit for the information memory device is smaller than a resistance value in the high-resistance state of the information memory device.

Abstract: A memory includes: a plurality of memory devices, each including a tunnel magnetic resistance effect device containing a magnetization free layer in which a direction of magnetization can be reversed, a tunnel barrier layer including an insulating material, and a magnetization fixed layer provided with respect to the magnetization free layer via the tunnel barrier layer with a fixed direction of magnetization; a random access memory area in which information is recorded using the direction of magnetization of the magnetization free layer of the memory device; and a read only memory area in which information is recorded depending on whether there is breakdown of the tunnel barrier layer of the memory device or not.

Abstract: A memory device includes: a memory layer that retains information based on a magnetization state of a magnetic material, a first intermediate layer and a second intermediate layer that are provided to sandwich the memory layer and are each formed of an insulator, a first fixed magnetic layer disposed on an opposite side of the first intermediate layer from the memory layer, a second fixed magnetic layer disposed on an opposite side of the second intermediate layer from the memory layer, and a nonmagnetic conductive layer provided between either the first intermediate layer or the second intermediate layer and the memory layer, the memory device being configured so that spin-polarized electrons are injected thereinto in a stacking direction to change the magnetization direction of the memory layer, thereby storing information in the memory layer.

Abstract: Write characteristics and read characteristics can be improved at the same time by applying novel materials to ferromagnetic layers. In a magneto resistive effect element having a pair of ferromagnetic layers being opposed to each other through an intermediate layer to cause a current to flow in the direction perpendicular to the film plane to obtain a magnetoresistive change, at least one of the ferromagnetic layers contains a ferromagnetic material containing Fe, Co and B. The ferromagnetic material should preferably contain FeaCobNicBd (in the chemical formula, a, b, c and d represent atomic %. 5?a?45, 35?b?85, 0?c?35, 10?d?30, a+b+C+d=100).

Abstract: A storage element includes a storage layer configured to hold information by use of a magnetization state of a magnetic material, with a pinned magnetization layer being provided on one side of the storage layer, with a tunnel insulation layer, and with the direction of magnetization of the storage layer being changed through injection of spin polarized electrons by passing a current in the lamination direction, so as to record information in the storage layer, wherein a spin barrier layer configured to restrain diffusion of the spin polarized electrons is provided on the side, opposite to the pinned magnetization layer, of the storage layer; and the spin barrier layer includes at least one material selected from the group composing of oxides, nitrides, and fluorides.

Abstract: Write characteristics and read characteristics can be improved at the same time by applying novel materials to ferromagnetic layers. In a magneto resistive effect element having a pair of ferromagnetic layers being opposed to each other through an intermediate layer to cause a current to flow in the direction perpendicular to the film plane to obtain a magnetoresistive change, at least one of the ferromagnetic layers contains a ferromagnetic material containing Fe, Co and B. The ferromagnetic material should preferably contain FeaCobNicBd (in the chemical formula, a, b, c and d represent atomic %. 5?a?45, 35?b?85, 0?c?35, 10?d?30. a+b+C+d=100).