Patents by Inventor Kazuhiro Bessho

Kazuhiro Bessho has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8559219
    Abstract: A storage element includes a storage layer which has magnetization vertical to the film surface and of which the direction of magnetization changes, a magnetization fixed layer which has magnetization vertical to the film surface serving as a reference of information, and an insulating layer, and the direction of magnetization of the storage layer changes by injecting spin-polarized electrons in the laminated direction of the layer structure so as to perform information recording, the size of an effective demagnetizing field that the storage layer receives is configured to be smaller than a saturated magnetization amount of the storage layer, and a ferromagnetic layer material constituting the storage layer has CoFeB as the base material and an anti-corrosive element is added to the base material.
    Type: Grant
    Filed: January 5, 2012
    Date of Patent: October 15, 2013
    Assignee: Sony Corporation
    Inventors: Hiroyuki Uchida, Masanori Hosomi, Kazuhiro Bessho, Hiroyuki Ohmori, Yutaka Higo, Tetsuya Asayama, Kazutaka Yamane
  • Patent number: 8547731
    Abstract: Disclosed herein is a memory device, including: a memory element including a memory layer for holding therein information in accordance with a magnetization state of a magnetic material, a fixed magnetization layer which is provided on the memory layer through a non-magnetic layer and whose direction of a magnetization is fixed to a direction parallel with a film surface, and a magnetic layer which is provided on a side opposite to the fixed magnetization layer relative to the memory layer through a non-magnetic layer and whose direction of a magnetization is a direction vertical to the film surface; and a wiring through which a current is caused to flow through the memory element in a direction of lamination of the layers of the memory element.
    Type: Grant
    Filed: May 2, 2011
    Date of Patent: October 1, 2013
    Assignee: Sony Corporation
    Inventors: Yutaka Higo, Masanori Hosomi, Hiroyuki Ohmori, Kazuhiro Bessho, Kazutaka Yamane, Hiroyuki Uchida
  • Patent number: 8546897
    Abstract: A magnetic memory element includes a memory layer, a reference layer, and a spin-injection layer provided between the memory layer and the reference layer. The reference layer has a structure in which at least two CoPt layers containing 20 atomic % or more and 50 atomic % or less of Pt and having a thickness of 1 nm or more and 5 nm or less are stacked with a Ru layer provided therebetween. The thickness of the Ru layer is 0.45±0.05 nm or 0.9±0.1 nm. In addition, the axis of 3-fold crystal symmetry of the CoPt layers is oriented perpendicularly to the film surface. The reference layer includes a high spin polarization layer of 1.5 nm or less containing Co or Fe as a main component at an interface with the spin-injection layer.
    Type: Grant
    Filed: July 29, 2011
    Date of Patent: October 1, 2013
    Assignee: Sony Corporation
    Inventors: Hiroyuki Ohmori, Masanori Hosomi, Kazuhiro Bessho, Yutaka Higo, Kazutaka Yamane, Hiroyuki Uchida
  • Publication number: 20130235872
    Abstract: A router, includes: a routing table memory unit configured to store a routing table and be capable of reading and writing the routing table at any time, the routing table being destination information of a packet; a search engine unit which has a transfer information base memory unit and which is configured to search for a destination of the packet based on a transfer information base; a power supply unit configured to supply power to the routing table memory unit and the transfer information base memory unit; and a control unit configured to control the power supply unit such that the power is supplied to the non-volatile memory when the non-volatile memory is operated, and the power supply is interrupted when the non-volatile memory is not operated.
    Type: Application
    Filed: February 27, 2013
    Publication date: September 12, 2013
    Applicant: SONY CORPORATION
    Inventors: Kazuhiro Bessho, Masanori Hosomi, Hiroyuki Ohmori, Yutaka Higo, Tetsuya Asayama, Kazutaka Yamane, Hiroyuki Uchida
  • Patent number: 8497139
    Abstract: A magnetic memory device including a memory layer having a vertical magnetization on the layer surface, of which the direction of magnetization is changed according to information; and a reference layer provided against the memory layer, and being a basis of information while having a vertical magnetization on the layer surface, wherein the memory device memorizes the information by reversing the magnetization of the memory layer by a spin torque generated when a current flows between layers made from the memory layer, the nonmagnetization layer and the reference layer, and a coercive force of the memory layer at a memorization temperature is 0.7 times or less than a coercive force at room temperature, and a heat conductivity of a center portion of an electrode formed on one side of the memory layer in the direction of the layer surface is lower than a heat conductivity of surroundings thereof.
    Type: Grant
    Filed: July 28, 2011
    Date of Patent: July 30, 2013
    Assignee: Sony Corporation
    Inventors: Hiroyuki Ohmori, Masanori Hosomi, Kazuhiro Bessho, Yutaka Higo, Kazutaka Yamane, Hiroyuki Uchida
  • Patent number: 8472243
    Abstract: Disclosed herein is a storage apparatus including a cell array configured to include storage devices arranged to form an array. Each of the storage device has: a storage layer for storing information as the state of magnetization of a magnetic substance; a fixed-magnetization layer having a fixed magnetization direction; and a tunnel insulation layer sandwiched between the storage layer and the fixed-magnetization layer. In an operation to write information on the storage layer, a write current is generated to flow in the layer-stacking direction of the storage layer and the fixed-magnetization layer in order to change the direction of the magnetization of the storage layer. The cell array is divided into a plurality of cell blocks. The thermal stability of the storage layer of any particular one of the storage devices has a value peculiar to the cell block including the particular storage device.
    Type: Grant
    Filed: June 7, 2011
    Date of Patent: June 25, 2013
    Assignee: Sony Corporation
    Inventors: Yutaka Higo, Hiroyuki Uchida, Hiroyuki Ohmori, Kazuhiro Bessho, Masanori Hosomi, Kazutaka Yamane
  • Patent number: 8455968
    Abstract: Disclosed herein is a storage element, including: a storage layer which has magnetization vertical to a film surface and in which a direction of the magnetization is changed in correspondence to information; a magnetization fixing layer which has magnetization vertical to a film surface becoming a reference of the information stored in the storage layer, which is composed of plural magnetic layers, and which has a multilayered ferri-pin structure into which the plural magnetic layers are laminated one upon another through a non-magnetic layer(s); and an insulating layer made of a non-magnetic material and provided between the storage layer and the magnetization fixing layer.
    Type: Grant
    Filed: September 2, 2011
    Date of Patent: June 4, 2013
    Assignee: Sony Corporation
    Inventors: Hiroyuki Uchida, Masanori Hosomi, Hiroyuki Ohmori, Kazuhiro Bessho, Yutaka Higo, Kazutaka Yamane
  • Patent number: 8455967
    Abstract: There is disclosed a memory element including a layered structure including a memory layer that has magnetization perpendicular to a film face and a magnetization direction thereof varies corresponding to information; a magnetization-fixed layer that has magnetization that is perpendicular to the film face; and an insulating layer that is provided between the memory layer. An electron that is spin-polarized is injected in a lamination direction of the layered structure, and thereby the magnetization direction of the memory layer varies and a recording of information is performed with respect to the memory layer, a magnitude of an effective diamagnetic field which the memory layer receives is smaller than a saturated magnetization amount of the memory layer, and the memory layer and the magnetization-fixed layer have a film thickness in such a manner that an interface magnetic anisotropy energy becomes larger than a diamagnetic energy.
    Type: Grant
    Filed: August 24, 2011
    Date of Patent: June 4, 2013
    Assignee: Sony Corporation
    Inventors: Yutaka Higo, Masanori Hosomi, Hiroyuki Ohmori, Kazuhiro Bessho, Kazutaka Yamane, Hiroyuki Uchida
  • Patent number: 8445980
    Abstract: There is disclosed a memory element which includes a layered structure. The layered structure includes a memory layer that has a magnetization perpendicular to a film face; a magnetization-fixed layer having magnetization perpendicular to the film face; an insulating layer provided between the memory layer and the magnetization-fixed layer; and a cap layer provided at a face side, which is opposite to the insulating layer-side face, of the memory layer, in which an electron that is spin-polarized is injected in a lamination direction of the layered structure, and thereby the magnetization direction of the memory layer varies and a recording of information is performed, a magnitude of an effective diamagnetic field which the memory layer receives is smaller than a saturated magnetization amount of the memory layer, and at least a face, which comes into contact with the memory layer, of the cap layer is formed of a Ta film.
    Type: Grant
    Filed: August 24, 2011
    Date of Patent: May 21, 2013
    Assignee: Sony Corporation
    Inventors: Yutaka Higo, Masanori Hosomi, Hiroyuki Ohmori, Kazuhiro Bessho, Kazutaka Yamane, Hiroyuki Uchida
  • Patent number: 8441082
    Abstract: There is provided a memory element including a magnetic layer that includes FexNiyBz (here, x+y+z=1, 0.2x?y?4x, and 0.1(x+y)?z?0.4(x+y)) as a main component, and has magnetic anisotropy in a direction perpendicular to a film face; and an oxide layer that is formed of an oxide having a sodium chloride structure or a spinel structure and comes into contact with one face of the magnetic layer.
    Type: Grant
    Filed: September 6, 2011
    Date of Patent: May 14, 2013
    Assignee: Sony Corporation
    Inventors: Hiroyuki Ohmori, Masanori Hosomi, Kazuhiro Bessho, Yutaka Higo, Kazutaka Yamane, Hiroyuki Uchida
  • Patent number: 8436438
    Abstract: There is provided a memory element including a memory layer that has magnetization perpendicular to a film face; a magnetization-fixed layer that has magnetization that is perpendicular to the film face; and an insulating layer that is provided between the memory layer and the magnetization-fixed layer, wherein an electron that is spin-polarized is injected in a lamination direction of a layered structure, and thereby the magnetization direction of the memory layer varies and a recording of information is performed, a magnitude of an effective diamagnetic field which the memory layer receives is smaller than a saturated magnetization amount of the memory layer, the insulating layer is formed of an oxide film, and the memory layer is formed of Co—Fe—B, a concentration of B is low in the vicinity of an interface with the insulating layer, and the concentration of B increases as it recedes from the insulating layer.
    Type: Grant
    Filed: August 24, 2011
    Date of Patent: May 7, 2013
    Assignee: Sony Corporation
    Inventors: Kazuhiro Bessho, Masanori Hosomi, Hiroyuki Ohmori, Yutaka Higo, Kazutaka Yamane, Hiroyuki Uchida
  • Patent number: 8437180
    Abstract: A memory includes: a memory device that has a memory layer storing data as a magnetization state of a magnetic body and a magnetization fixed layer whose direction of magnetization is fixed through a nonmagnetic layer interposed between the memory layer and the magnetization fixed layer and stores the data in the memory layer by changing a magnetization direction of the memory layer when a write current flowing in a stacked direction of the memory layer and the magnetization fixed layer is applied; and a voltage control unit that supplies the write current configured by independent pulse trains of two or more to the memory device by using a write voltage that is configured by independent pulse trains of two or more.
    Type: Grant
    Filed: June 8, 2010
    Date of Patent: May 7, 2013
    Assignee: Sony Corporation
    Inventors: Yutaka Higo, Masanori Hosomi, Minoru Ikarashi, Hiroshi Kano, Shinichiro Kusunoki, Hiroyuki Ohmori, Yuki Oishi, Kazutaka Yamane, Tetsuya Yamamoto, Kazuhiro Bessho
  • Publication number: 20130033931
    Abstract: Provided is a storage element including a storage layer that holds information according to a magnetization state of a magnetic body, a magnetization fixing layer that has magnetization serving as a reference of the information stored in the storage layer, and an insulation layer that is formed of a non-magnetic body disposed between the storage layer and the magnetization fixing layer. The information is stored by reversing the magnetization of the storage layer using spin torque magnetization reversal occurring with a current flowing in a lamination direction of a layer configuration of the storage layer, the insulation layer, and the magnetization fixing layer, and a size of the storage layer is less than a size in which a direction of the magnetization is simultaneously changed.
    Type: Application
    Filed: July 27, 2012
    Publication date: February 7, 2013
    Applicant: SONY CORPORATION
    Inventors: Kazutaka Yamane, Masanori Hosomi, Hiroyuki Ohmori, Kazuhiro Bessho, Yutaka Higo, Tetsuya Asayama, Hiroyuki Uchida
  • Patent number: 8351603
    Abstract: A random number generating device includes: a random number generator configured to have a plurality of random number generating elements that generate a random number in response to supply of a spin-injection current; and a temperature controller.
    Type: Grant
    Filed: November 10, 2010
    Date of Patent: January 8, 2013
    Assignee: Sony Corporation
    Inventors: Yuki Oishi, Yutaka Higo, Hiroshi Kano, Masanori Hosomi, Hiroyuki Ohmori, Kazutaka Yamane, Kazuhiro Bessho
  • Patent number: 8344467
    Abstract: A storage element includes: a storage layer configured to retain information based on a magnetization state of a magnetic material and include a perpendicular magnetization layer whose magnetization direction is in a direction perpendicular to a film plane, a non-magnetic layer, and a ferromagnetic layer that has an axis of easy magnetization along a direction in the film plane and has a magnetization direction inclined to a direction perpendicular to the film plane by an angle in a range from 15 degrees to 45 degrees, the storage layer being configured by stacking of the perpendicular magnetization layer and the ferromagnetic layer with intermediary of the non-magnetic layer and magnetic coupling between the perpendicular magnetization layer and the ferromagnetic layer; a magnetization pinned layer; and a non-magnetic intermediate layer.
    Type: Grant
    Filed: May 26, 2011
    Date of Patent: January 1, 2013
    Assignee: Sony Corporation
    Inventors: Hiroyuki Ohmori, Masanori Hosomi, Kazuhiro Bessho, Yutaka Higo, Kazutaka Yamane, Hiroyuki Uchida
  • Patent number: 8331136
    Abstract: A recording method of a nonvolatile memory including a recording circuit that electrically performs recording of information for an information memory device having a resistance change connected to a power supply for information recording, includes the steps of: recording information in a low-resistance state by the recording circuit under a condition that an output impedance of the recording circuit for the information memory device is larger than a resistance value in the low-resistance state of the information memory device; and recording information in a high-resistance state by the recording circuit under a condition that an output impedance of the recording circuit for the information memory device is smaller than a resistance value in the high-resistance state of the information memory device.
    Type: Grant
    Filed: June 23, 2010
    Date of Patent: December 11, 2012
    Assignee: Sony Corporation
    Inventors: Hiroyuki Ohmori, Tetsuya Yamamoto, Masanori Hosomi, Yutaka Higo, Kazutaka Yamane, Kazuhiro Bessho, Hiroshi Kano, Minoru Ikarashi, Yuki Oishi, Shinichiro Kusunoki
  • Publication number: 20120300542
    Abstract: A storage element includes a storage layer which has magnetization perpendicular to its film surface and which retains information by a magnetization state of a magnetic substance, a magnetization pinned layer having magnetization perpendicular to its film surface which is used as the basis of the information stored in the storage layer, an interlayer of a non-magnetic substance provided between the storage layer and the magnetization pinned layer, and a cap layer which is provided adjacent to the storage layer at a side opposite to the interlayer and which includes at least two oxide layers. The storage element is configured to store information by reversing the magnetization of the storage layer using spin torque magnetization reversal generated by a current passing in a laminate direction of a layer structure including the storage layer, the interlayer, and the magnetization pinned layer.
    Type: Application
    Filed: May 2, 2012
    Publication date: November 29, 2012
    Applicant: SONY CORPORATION
    Inventors: Hiroyuki Uchida, Masanori Hosomi, Hiroyuki Ohmori, Kazuhiro Bessho, Yutaka Higo, Tetsuya Asayama, Kazutaka Yamane
  • Publication number: 20120300541
    Abstract: A storage element includes: a storage layer which retains information by a magnetization state of a magnetic substance; a magnetization pinned layer having magnetization which is used as the basis of the information stored in the storage layer; and an interlayer of a non-magnetic substance provided between the storage layer and the magnetization pinned layer. The storage element is configured to store information by reversing magnetization of the storage layer using spin torque magnetization reversal generated by a current passing in a laminate direction of a layer structure including the storage layer, the interlayer, and the magnetization pinned layer, and when the saturation magnetization of the storage layer and the thickness thereof are represented by Ms (emu/cc) and t (nm), respectively, (1489/Ms)?0.593<t<(6820/Ms)?1.55 holds.
    Type: Application
    Filed: May 1, 2012
    Publication date: November 29, 2012
    Applicant: SONY CORPORATION
    Inventors: Yutaka Higo, Masanori Hosomi, Hiroyuki Ohmori, Kazuhiro Bessho, Tetsuya Asayama, Kazutaka Yamane, Hiroyuki Uchida
  • Publication number: 20120294079
    Abstract: A memory element including a memory layer to hold the information by the magnetization state of a magnetic substance, a magnetization pinned layer having magnetization serving as a reference of the information stored in the memory layer, an intermediate layer formed from a nonmagnetic substance disposed between the memory layer and the magnetization pinned layer, a magnetic coupling layer disposed adjoining the magnetization pinned layer and opposing to the intermediate layer, and a high coercive force layer disposed adjoining the magnetic coupling layer, wherein the information is stored by reversing magnetization of the memory layer, making use of spin torque magnetization reversal generated along with a current passing in the lamination direction of the layered structure including the memory layer, the intermediate layer, and the magnetization pinned layer, and the magnetic coupling layer has a two-layer laminate structure.
    Type: Application
    Filed: May 7, 2012
    Publication date: November 22, 2012
    Applicant: SONY CORPORATION
    Inventors: Hiroyuki Ohmori, Masanori Hosomi, Kazuhiro Bessho, Yutaka Higo, Kazutaka Yamane, Hiroyuki Uchida, Tetsuya Asayama
  • Publication number: 20120287696
    Abstract: A storage element includes a storage layer having a magnetization perpendicular to a layer surface and storing information according to a magnetization state of a magnetic material; a fixed magnetization layer having the magnetization as a reference of the information of the storage layer and perpendicular to the layer surface; an interlayer formed of a nonmagnetic material and interposed between the storage layer and the fixed magnetization layer; a coercive force enhancement layer adjacent to the storage layer, opposite to the interlayer, and formed of Cr, Ru, W, Si, or Mn; and a spin barrier layer formed of an oxide, adjacent to the coercive force enhancement layer, and opposite to the storage layer.
    Type: Application
    Filed: April 19, 2012
    Publication date: November 15, 2012
    Applicant: SONY CORPORATION
    Inventors: Hiroyuki Ohmori, Masanori Hosomi, Kazuhiro Bessho, Yutaka Higo, Kazutaka Yamane, Hiroyuki Uchida, Tetsuya Asayama