Abstract: A soft magnetic alloy includes a main component of (Fe(1?(?+?))X1?X2?)(1?(a+b+c+d+e))MaBbPcSidCe. X1 is one or more of Co and Ni. X2 is one or more of Al, Mn, Ag, Zn, Sn, As, Sb, Cu, Cr, Bi, N, O, and rare earth elements. M is one or more of Nb, Hf, Zr, Ta, Mo, W, and V. 0.020?a?0.14 is satisfied. 0.020<b?0.20 is satisfied. 0?d?0.060 is satisfied. ??0 is satisfied. ??0 is satisfied. 0??+??0.50 is satisfied. c and e are within a predetermined range. The soft magnetic alloy has a nanohetero structure or a structure of Fe based nanocrystallines.

Abstract: There is included (a) forming a film on a substrate by supplying a first processing gas to the substrate in a process container; (b) forming a first pre-coated film, which has a first thickness and has a material different from a material of the film formed in (a), in the process container by supplying a second processing gas into the process container in a state in which the substrate does not exist in the process container; and (c) forming a second pre-coated film, which has a second thickness smaller than the first thickness and has the same material as the material of the film formed in (a), on the first pre-coated film formed in the process container by supplying a third processing gas into the process container in the state in which the substrate does not exist in the process container.

Abstract: There is included (a) loading a substrate where a conductive metal-element-containing film is exposed on a surface of the substrate into a process chamber under a first temperature; (b) supplying a reducing gas to the substrate while raising a temperature of the substrate to a second temperature higher than the first temperature in the process chamber; (c) forming a first film on the metal-element-containing film, by supplying a first process gas, which does not include an oxidizing gas, to the substrate under the second temperature in the process chamber; and (d) forming a second film on the first film such that the second film is thicker than the first film, by supplying a second process gas, which includes an oxidizing gas, to the substrate under a third temperature higher than the first temperature in the process chamber.

Abstract: There is provided a technique, which includes: dividing an inside of a process chamber, into which a cleaning gas is to be supplied, into three or more zones in a gas flow direction and heating the inside of the process chamber such that, in the process chamber, a temperature difference between a zone positioned on an upstream side in the gas flow direction and a zone adjacent to the zone positioned on the upstream side is greater than a temperature difference between a zone positioned on a downstream side in the gas flow direction and a zone adjacent to the zone positioned on the downstream side; and supplying the cleaning gas into the process chamber after the act of heating.

Abstract: Included are processes of (a) supplying a film-forming gas into a processing container in which a substrate is accommodated to form a film on the substrate, (b) supplying a fluorine-containing gas into the processing container in which the substrate is not accommodated to remove a deposit including the film adhered to the inside of the processing container, (c) supplying a precoat gas into the processing container in which the substrate is not accommodated and from which the deposit is removed to form a precoat film in the processing container, and (d) supplying a film-forming gas into the processing container in which a substrate is accommodated and in which the precoat film is formed to form a film on the substrate, in which, in (c), a film thickness distribution of the precoat film is adjusted in accordance with a distribution of a residual fluorine concentration in the processing container.

Abstract: There is included (a) loading a substrate where a conductive metal-element-containing film is exposed on a surface of the substrate into a process chamber under a first temperature; (b) supplying a reducing gas to the substrate while raising a temperature of the substrate to a second temperature higher than the first temperature in the process chamber; (c) forming a first film on the metal-element-containing film, by supplying a first process gas, which does not include an oxidizing gas, to the substrate under the second temperature in the process chamber; and (d) forming a second film on the first film such that the second film is thicker than the first film, by supplying a second process gas, which includes an oxidizing gas, to the substrate under a third temperature higher than the first temperature in the process chamber.

Abstract: There is provided a technique that includes: (a) forming a film on a substrate in a process container by performing a cycle a predetermined number of times, the cycle including: supplying an oxygen-containing gas from a pipe made of metal to the substrate in the process container; supplying a nitrogen-and-hydrogen-containing gas from the pipe to the substrate in the process container; and (b) forming a layer on an inner surface of the pipe by supplying a surface treatment gas into the pipe such that the surface treatment gas chemically reacts with the inner surface of the pipe.

Abstract: There is provided a technique of cleaning an inside of a process container, including: (a) removing substances adhered in a process container set at a first temperature by supplying a first gas at a first flow rate into the process container and exhausting the inside of the process container; (b) physically desorbing and removing residual fluorine in the process container set at a second temperature by supplying a second gas at a second flow rate into the process container and exhausting the inside of the process container; and (c) chemically desorbing and removing residual fluorine in the process container set at a third temperature by supplying a third gas at a third flow rate into the process container and exhausting the inside of the process container.

Abstract: Disclosed is a method comprising acquiring a value relating to VEGF-A of a subject, wherein the value is a measured value of total VEGF-A in a blood sample, or a value obtained by dividing a measured value of VEGF-A165b in the blood sample by a measured value of total VEGF-A in the blood sample (VEGF-A165b/total VEGF-A), and the value suggests prognosis of myocardial infarction of the subject or severity of coronary artery disease of the subject.

Abstract: There is provided a technique of cleaning an inside of a process container, including: (a) removing substances adhered in a process container set at a first temperature by supplying a first gas at a first flow rate into the process container and exhausting the inside of the process container; (b) physically desorbing and removing residual fluorine in the process container set at a second temperature by supplying a second gas at a second flow rate into the process container and exhausting the inside of the process container; and (c) chemically desorbing and removing residual fluorine in the process container set at a third temperature by supplying a third gas at a third flow rate into the process container and exhausting the inside of the process container.

Abstract: There is provided a technique that includes: (a) supplying a first gas containing a predetermined element to the substrate; (b) supplying a second gas containing carbon and nitrogen to the substrate; (c) supplying a nitrogen-containing gas activated by plasma to the substrate; (d) supplying an oxygen-containing gas to the substrate; and (e) forming a film containing at least the predetermined element, oxygen, carbon, and nitrogen on the substrate by: performing a cycle a first number of times of two or more, the cycle performing (a) to (d); or performing a cycle once or more, the cycle performing (a) to (d) in this order.

Abstract: There is provided a technique capable of capable of preventing a substrate from being metal-contaminated by a component constituting a furnace opening. According to one aspect thereof, there is provided a furnace opening structure including: an upper inlet structure connected to a first protrusion provided at a lower portion of a reaction tube via a first seal, and configured to support the reaction tube; a lower inlet structure connected to the upper inlet structure via a second seal; and a fixing structure connected to the upper inlet structure and configured to fix the first protrusion, wherein the upper inlet structure is provided below an exhaust pipe provided at the lower portion of the reaction tube, and wherein the first protrusion is configured to be capable of being cooled by circulating a cooling medium through flow paths provided inside the upper inlet structure and the fixing structure, respectively.

Abstract: There is provided a technique that includes forming a film on a substrate by performing a cycle a predetermined number of times, the cycle including: (a) supplying a precursor gas to the substrate in a process container of a substrate processing apparatus via a first pipe made of metal; (b) supplying an oxygen-containing gas to the substrate in the process container via a second pipe made of metal, wherein a fluorine-containing layer is continuously formed on an inner surface of the second pipe; and (c) supplying a nitrogen-and-hydrogen-containing gas to the substrate in the process container via the second pipe.

Abstract: There is included (a) forming a film on a substrate by supplying a first processing gas to the substrate in a process container; (b) forming a first pre-coated film, which has a first thickness and has a material different from a material of the film formed in (a), in the process container by supplying a second processing gas into the process container in a state in which the substrate does not exist in the process container; and (c) forming a second pre-coated film, which has a second thickness smaller than the first thickness and has the same material as the material of the film formed in (a), on the first pre-coated film formed in the process container by supplying a third processing gas into the process container in the state in which the substrate does not exist in the process container.

Abstract: There is provided a technique capable of effectively removing a residual element after a cleaning process. According to one aspect of the technique, there is provided a method of manufacturing a semiconductor device, including: (a) supplying a cleaning gas to at least one nozzle among a plurality of nozzles provided in a reaction tube after a substrate is processed in the reaction tube and unloaded out of the reaction tube; and (b) supplying a gas containing hydrogen and oxygen to the at least one nozzle after (a).

Abstract: A method of forming a twisted product from elongated food materials comprises steps of continuously and downwardly discharging elongated food materials and at the same time twisting the elongated food materials around a vertical axis; conveying the elongated food materials by a conveyor in a lateral direction after the elongated food materials have reached the conveyer; narrowing a separating portion of a lowering region of the elongated food material by a shutter-type squeezing device; allowing the separating portion to become a thin connecting portion which can be separated by a pulling operation, and separating the thin connecting portion to form a twisted product.

Abstract: There is included (a) forming a film on a substrate by supplying a first processing gas to the substrate in a process container; (b) forming a first pre-coated film, which has a first thickness and has a material different from a material of the film formed in (a), in the process container by supplying a second processing gas into the process container in a state in which the substrate does not exist in the process container; and (c) forming a second pre-coated film, which has a second thickness smaller than the first thickness and has the same material as the material of the film formed in (a), on the first pre-coated film formed in the process container by supplying a third processing gas into the process container in the state in which the substrate does not exist in the process container.

Abstract: There is provided a technique that includes forming a film on a substrate by performing a cycle a predetermined number of times, the cycle including: (a) supplying a precursor gas from a precursor gas supply line into a process chamber in which the substrate is accommodated; and (b) supplying a reaction gas into the process chamber in which the substrate is accommodated, wherein in (a), the precursor gas is divisionally supplied to the substrate a first plural number of times, the precursor gas is pre-filled in a storage installed in the precursor gas supply line and then supplied into the process chamber when the precursor gas is supplied for the first time, and an inside of the process chamber is exhausted before supplying the precursor gas for the second time.

Abstract: There is provided a technique that includes: (a) forming a film on a substrate in a process container by performing a cycle a predetermined number of times, the cycle including: supplying an oxygen-containing gas from a pipe made of metal to the substrate in the process container; supplying a nitrogen-and-hydrogen-containing gas from the pipe to the substrate in the process container; and (b) forming a layer on an inner surface of the pipe by supplying a surface treatment gas into the pipe such that the surface treatment gas chemically reacts with the inner surface of the pipe.

Abstract: There is provided a technique that includes: (a) forming a film on a substrate in a process container by performing a cycle a predetermined number of times, the cycle including: supplying a precursor gas from a first pipe made of metal and a first nozzle to the substrate in the process container; supplying an oxygen-containing gas from a second pipe made of metal and a second nozzle to the substrate in the process container; and supplying a nitrogen-and-hydrogen-containing gas from the second pipe and the second nozzle to the substrate in the process container; and (b) forming a continuous fluorine-containing layer on an inner surface of the second pipe by supplying a fluorine-containing gas into the second pipe such that the fluorine-containing gas chemically reacts with the inner surface of the second pipe.