Abstract: A silica glass crucible for pulling up a silicon single crystal including an outer layer formed from a natural silica glass layer, and an inner layer formed from a synthetic silica glass layer, wherein the synthetic silica glass layer includes a first synthetic silica glass layer formed in a region within a certain range from the center of a crucible bottom section, and a second synthetic silica glass layer formed in a region which excludes the formation region of the first synthetic silica glass layer, and wherein the first synthetic silica glass layer has a thickness of 0.5 mm or more and 1.5 mm or less and a concentration of an OH group included in the first synthetic silica glass layer being 100 ppm or less.

Abstract: A by-product (e.g., RuF5) that is produced in the process of cleaning may cover a cleaning subject film and may obstruct the progress of the cleaning. To suppress an accumulation of the by-product, a cleaning operation is divided into plural operations, performing vacuum evacuation between the divided operations to evaporate the by-product and expose a new surface of the cleaning subject film between each supply of cleaning gas.

Abstract: A manufacturing method of a semiconductor device of the present invention includes the step of forming an insulating film on a substrate, and the step of forming a high dielectric constant insulating film on the insulating film, and the step of forming a titanium aluminium nitride film on the high dielectric constant insulating film, wherein in the step of forming the titanium aluminum nitride film, formation of an aluminium nitride film and formation of a titanium nitride film are alternately repeated, and at that time, the aluminium nitride film is formed firstly and/or lastly.

Abstract: Disclosed is a motor-driving device capable of protecting an inverter from breakdown. First current-protecting section retains reference voltage value Vref1 as a preset value. If the current to be fed into inverter exceeds value Vref1, first current-protecting section shuts off the output of driver and outputs a first warning to driving-signal generator to shut off generating driving signals. This protects inverter from breakdown. Second current-protection section retains reference voltage value Vref2 that is smaller than value Vref1. If the detected current exceeds value Vref2, second current-protecting section outputs a second warning. Receiving the second warning, driving-signal generator immediately stops generating driving signals; however, it resumes output of driving signals after no longer receiving second warning. The structure above protects inverter from breakdown without frequent stops of brushless motor.

Abstract: Disclosed is a motor-driving device capable of protecting an inverter from breakdown. First current-protecting section retains reference voltage value Vref1 as a preset value. If the current to be fed into inverter exceeds value Vref1, first current-protecting section shuts off the output of driver and outputs a first warning to driving-signal generator to shut off generating driving signals. This protects inverter from breakdown. Second current-protection section retains reference voltage value Vref2 that is smaller than value Vref1. If the detected current exceeds value Vref2, second current-protecting section outputs a second warning. Receiving the second warning, driving-signal generator immediately stops generating driving signals; however, it resumes output of driving signals after no longer receiving second warning. The structure above protects inverter from breakdown without frequent stops of brushless motor.

Abstract: The present invention provides a manufacturing method of a semiconductor device that has a rapid film formation rate and high productivity, and to provide a substrate processing apparatus.

Abstract: A method of manufacturing a semiconductor device comprises carrying a substrate into a processing chamber, forming a film containing ruthenium on the substrate by supplying a material gas into the processing chamber, carrying the film-formed substrate out of the processing chamber; and cleaning an inside of the processing chamber by executing, alternately plural times, removing deposits containing ruthenium deposited in the processing chamber by supplying a cleaning gas whose molecule has a fluorine atom or a chlorine atom into the processing chamber and exposing surfaces of the deposits by removing a by-product generated so as to cover the surfaces of the deposits in removing the deposits.

Abstract: In a personal authentication device, a storing unit of each group stores therein biometric information of the persons belonging to that group. When a subject is to be authenticated, an acquiring unit acquires subject biometric information that is biometric information of the subject. A collating unit decides whether the subject is authentic based on whether there is a match for the subject biometric information in the biometric information in the storing unit. If the subject is determined to be not authentic, the subject biometric information is collated with biometric information in the storing unit of another group.

Abstract: A heat shielding member is provided in a device pulling up a silicon single crystal rod from a silicon melt stored in a quartz crucible, and equipped with a tube portion which shields radiant heat from the heater surrounding the outer peripheral face of the silicon single crystal rod, a swelling portion provided at the lower portion of the tube portion, and a ring-shape heat accumulating portion provided at the inside of the swelling portion. The heat accumulating portion is a thermal conductivity of 5 W/(m·° C.) or less, its inner peripheral face is a height (H1) of 10 mm or more and d/2 or less when the diameter of the silicon single crystal rod is referred to as d and the minimum distance (W1) between the outer peripheral face of the silicon single crystal rod and the inner peripheral face of the heat accumulating portion is formed so as to be 10 mm or more and 0.

Abstract: [Problem] A silicon single crystal ingot in which point defect agglomerates do not exist over a substantially entire length thereof is manufactured without reducing a pure margin. [Solving Means] A heat shielding member 36 comprises a bulge portion 41 which is provided to bulge in an in-cylinder direction at a lower portion of a cylindrical portion 37 and has a heat storage member 47 provided therein. A flow quantity of an inert gas flowing down between the bulge portion 41 in the heat shielding member 36 and an ingot 25 when pulling up a top-side ingot 25a of the silicon single crystal ingot 25 is set larger than a flow quantity of the inert gas flowing down between the bulge portion 41 and the ingot 25 when pulling up a bottom-side ingot 25b of the silicon single crystal ingot 25, thereby pulling up the ingot 25.

Abstract: A personal identification system using biometrics data including a biometrics data inputting section, a characteristic data obtaining section for obtaining characteristic data of the collation object person, a biometrics data retaining section for retaining registration biometrics data of each registered object person, which data is previously registered and correlated with one of collation groups according to registration characteristic data, and a biometrics data collating section for collating the collation biometrics data with the registration biometrics data, wherein the biometrics data collating section extracts a particular group from the plural collation groups based on the characteristic data of the collation object person, and collates the collation biometrics data with registration biometrics data of the particular group.

Abstract: [Problem] A silicon single crystal ingot in which point defect agglomerates do not exist over a substantially entire length thereof is manufactured without reducing a pure margin. [Solving Means] A heat shielding member 36 comprises a bulge portion 41 which is provided to bulge in an in-cylinder direction at a lower portion of a cylindrical portion 37 and has a heat storage member 47 provided therein. A flow quantity of an inert gas flowing down between the bulge portion 41 in the heat shielding member 36 and an ingot 25 when pulling up a top-side ingot 25a of the silicon single crystal ingot 25 is set larger than a flow quantity of the inert gas flowing down between the bulge portion 41 and the ingot 25 when pulling up a bottom-side ingot 25b of the silicon single crystal ingot 25, thereby pulling up the ingot 25.

Abstract: A silicon single crystal ingot is pulled at a pull rate so that the interior of the ingot results in a perfect region in which agglomerates of interstitial silicon-type point defects and agglomerates of vacancy-type point defects are absent, while rotating a quartz crucible for storing a silicon melt at a predetermined rotation speed and rotating the ingot pulled from the silicon melt in the opposite direction to the rotation of the quartz crucible at a predetermined rotation speed. An average rotation speed CRTAV of the quartz crucible during the pulling of a top ingot portion is set to be faster than an average rotation speed CRTAV of the quartz crucible during the pulling of a bottom ingot portion of the silicon single crystal ingot.

Abstract: There is provided an improvement in a method for manufacturing a silicon single crystal in which nitrogen is doped at a rate which is not smaller than 1×1015 atoms/cm3 and less than 4.5×1015 atoms/cm3 by pulling up a silicon single crystal 29 from a silicon melt 12 which is stored in a quartz crucible 13 and contains nitrogen, wherein the single crystal is pulled up while supplying a silicon raw material 23 which does not contain nitrogen into the silicon melt 12 in such a manner that the liquid level position of the silicon melt stored in the quartz crucible is maintained constant in accordance with the amount of growth of the single crystal. The amount of nitrogen contained in a pulled-up silicon single crystal is controlled, and hence a uniform nitrogen concentration can be obtained along the axial direction of the single crystal. The pull-up length of the silicon single crystal in which nitrogen is doped at a high concentration can be increased.

Abstract: A surface of a reference sample is contaminated with a transition metal, and a heat treatment is performed to diffuse the transition metal in the sample. A concentration of recombination centers formed by the transition metal is measured in the entire heat-treated reference sample, and a region [V], a region [Pv], a region [Pi], and a region [I] in the reference sample are defined based on the values measured. Meanwhile, recombination lifetimes associated with the transition metal are measured in the entire heat-treated reference sample. Based on both of the measurement results, a correlation line of the concentration of recombination centers and the recombination lifetimes is produced. A surface of the measurement sample is contaminated with the transition metal, and a heat treatment is performed to diffuse the transition metal in the sample.

Abstract: A heat shielding member is provided in a device pulling up a silicon single crystal rod from a silicon melt stored in a quartz crucible, and equipped with a tube portion which shields radiant heat from the heater surrounding the outer peripheral face of the silicon single crystal rod, a swelling portion provided at the lower portion of the tube portion, and a ring-shape heat accumulating portion provided at the inside of the swelling portion. The heat accumulating portion is a thermal conductivity of 5 W/(m·° C.) or less, its inner peripheral face is a height (H1) of 10 mm or more and d/2 or less when the diameter of the silicon single crystal rod is referred to as d and the minimum distance (W1) between the outer peripheral face of the silicon single crystal rod and the inner peripheral face of the heat accumulating portion is formed so as to be 10 mm or more and 0.

Abstract: The present invention provides an electric blower that performs: measuring an amount of airflow against a fan rotation speed of the blower with a load magnitude detected previously; determining an empirical formula to calculate a fan rotation speed to discharge an amount of target airflow in response to the magnitude of a load of the blower according to the data obtained from the above measurement repeated a plurality of times varying the magnitude of the load on the blower; operating, firstly in practice, the blower to detect the magnitude of the load of the blower, then to calculate the fan rotation speed to discharge the amount of target airflow using the empirical formula; and then changing the blower operation to the fan rotation speed given by the calculation.

Abstract: A silicon single crystal ingot is pulled at a pull rate so that the interior of the ingot results in a perfect region in which agglomerates of interstitial silicon-type point defects and agglomerates of vacancy-type point defects are absent, while rotating a quartz crucible for storing a silicon melt at a predetermined rotation speed and rotating the ingot pulled from the silicon melt in the opposite direction to the rotation of the quartz crucible at a predetermined rotation speed. An average rotation speed CRTAV of the quartz crucible during the pulling of a top ingot portion is set to be faster than an average rotation speed CRTAV of the quartz crucible during the pulling of a bottom ingot portion of the silicon single crystal ingot.

Abstract: A surface of a reference sample is contaminated with a transition metal, and a heat treatment is performed to diffuse the transition metal in the sample. A concentration of recombination centers formed by the transition metal is measured in the entire heat-treated reference sample, and a region [V], a region [Pv], a region [Pi], and a region [I] in the reference sample are defined based on the values measured. Meanwhile, recombination lifetimes associated with the transition metal are measured in the entire heat-treated reference sample. Based on both of the measurement results, a correlation line of the concentration of recombination centers and the recombination lifetimes is produced. A surface of the measurement sample is contaminated with the transition metal, and a heat treatment is performed to diffuse the transition metal in the sample.

Abstract: The present invention discloses a power apparatus with the output voltage thereof made variable, which allows harmonics to be suppressed while an enhanced power factor being maintained. The power apparatus comprises an alternating current power source, a bridge rectifier circuit to subject alternating currents from the alternating current power source to full-wave rectification, a reactor connected between the alternating current power source and the alternating current input end of the bridge rectifier circuit and a capacitor connected via a bi-directional switch between the alternating current input end and the direct current end of the bridge rectifier circuit, further comprising a smoothing capacitor, a zero-crossing detecting means, a bi-directional switch drive signal generating means and a bi-directional switch driving means.