Abstract: There is provided a technique that includes: (a) forming a film on a substrate in a process container by performing a cycle a predetermined number of times, the cycle including: supplying a precursor gas from a first pipe made of metal and a first nozzle to the substrate in the process container; supplying an oxygen-containing gas from a second pipe made of metal and a second nozzle to the substrate in the process container; and supplying a nitrogen-and-hydrogen-containing gas from the second pipe and the second nozzle to the substrate in the process container; and (b) forming a continuous fluorine-containing layer on an inner surface of the second pipe by supplying a fluorine-containing gas into the second pipe such that the fluorine-containing gas chemically reacts with the inner surface of the second pipe.

Abstract: There is included (a) loading a substrate where a conductive metal-element-containing film is exposed on a surface of the substrate into a process chamber under a first temperature; (b) supplying a reducing gas to the substrate while raising a temperature of the substrate to a second temperature higher than the first temperature in the process chamber; (c) forming a first film on the metal-element-containing film, by supplying a first process gas, which does not include an oxidizing gas, to the substrate under the second temperature in the process chamber; and (d) forming a second film on the first film such that the second film is thicker than the first film, by supplying a second process gas, which includes an oxidizing gas, to the substrate under a third temperature higher than the first temperature in the process chamber.

Abstract: A method for improving a film formation rate and forming a film having a high dry etching resistance is disclosed. The method includes forming a metal nitride layer containing the metal element and the nitrogen element by performing a predetermined number of times in a time division manner supplying a halogen-based source gas containing the metal element to the substrate and supplying a reaction gas containing the nitrogen element and reacting with the metal element to the substrate; and forming a metal carbonitride layer containing the metal element, the carbon element, and the nitrogen element by performing a predetermined number of times in a time division manner supplying an organic-based source gas containing the metal element and the carbon element to the substrate and supplying the reaction gas to the substrate.

Abstract: A video game processing apparatus stores music information indicating music, the music being constructed by a plurality of tracks, the music being reproduced with plural kinds of reproducing styles by reproducing an arbitrary combination of one or two or more tracks; stores music reproducing style information, the music reproducing style information indicating a reproducing style of music according to a game point value; starts reproduction with a reproducing style according to the game point value; reproduces the music indicated by the music information; updates the game point value in accordance with a progress status of the video game; refers to the updated game point value and the music reproducing style information to determine whether the reproducing style of the reproduced music is to be updated or not; and updates the reproducing style of the reproduced music to a reproducing style according to the updated game point value.

Abstract: There is included (a) forming a film on a substrate by supplying a first processing gas to the substrate in a process container; (b) forming a first pre-coated film, which has a first thickness and has a material different from a material of the film formed in (a), in the process container by supplying a second processing gas into the process container in a state in which the substrate does not exist in the process container; and (c) forming a second pre-coated film, which has a second thickness smaller than the first thickness and has the same material as the material of the film formed in (a), on the first pre-coated film formed in the process container by supplying a third processing gas into the process container in the state in which the substrate does not exist in the process container.

Abstract: There is provided a technique that includes forming a film on a substrate by performing a cycle a predetermined number of times, the cycle including: (a) supplying a precursor gas to the substrate in a process container of a substrate processing apparatus via a first pipe made of metal; (b) supplying an oxygen-containing gas to the substrate in the process container via a second pipe made of metal, wherein a fluorine-containing layer is continuously formed on an inner surface of the second pipe; and (c) supplying a nitrogen-and-hydrogen-containing gas to the substrate in the process container via the second pipe.

Abstract: A method of manufacturing a semiconductor device is provided. The method includes forming a film on a substrate by causing a first precursor and a second precursor to intermittently react with each other by repeating a cycle a plurality of times, the cycle alternately performing supplying the first precursor, which satisfies an octet rule and has a first pyrolysis temperature, to the substrate and supplying the second precursor, which does not satisfy the octet rule and has a second pyrolysis temperature lower than the first pyrolysis temperature, to the substrate. In the act of forming the film, a supply amount of the first precursor is set larger than a supply amount of the second precursor.

Abstract: There is provided a technique that includes: (a) forming a film on a substrate in a process container by performing a cycle a predetermined number of times, the cycle including: supplying a precursor gas from a first pipe made of metal and a first nozzle to the substrate in the process container; supplying an oxygen-containing gas from a second pipe made of metal and a second nozzle to the substrate in the process container; and supplying a nitrogen-and-hydrogen-containing gas from the second pipe and the second nozzle to the substrate in the process container; and (b) forming a continuous fluorine-containing layer on an inner surface of the second pipe by supplying a fluorine-containing gas into the second pipe such that the fluorine-containing gas chemically reacts with the inner surface of the second pipe.

Abstract: There is provided a technique of cleaning an inside of a process container, including: (a) removing substances adhered in a process container set at a first temperature by supplying a first gas at a first flow rate into the process container and exhausting the inside of the process container; (b) physically desorbing and removing residual fluorine in the process container set at a second temperature by supplying a second gas at a second flow rate into the process container and exhausting the inside of the process container; and (c) chemically desorbing and removing residual fluorine in the process container set at a third temperature by supplying a third gas at a third flow rate into the process container and exhausting the inside of the process container.

Abstract: Provided is a technique of adjusting a work function. A method of manufacturing a semiconductor device includes: (a) forming a titanium nitride layer on a substrate by supplying a first source containing titanium and a second source containing nitrogen to the substrate; (b) forming a titanium aluminum carbonitride layer on the substrate by supplying the first source, the second source and a third source containing aluminum and carbon to the substrate; (c) forming a laminated film on the substrate by performing (a) and (b); and (d) adjusting ratios of titanium, nitrogen, aluminum and carbon in the laminated film based on how many times (a) and (b) are performed.

Abstract: A method of manufacturing a semiconductor device, includes: forming a film on a substrate by performing a cycle a predetermined number of times, the cycle including: supplying two or more kinds of halogen-based precursors having the same major elements and different halogen elements, or different major elements and the same halogen elements, or different major elements and different halogen elements to the substrate while overlapping at least portions of supply periods of the two or more kinds of halogen-based precursors; and supplying a reactant having a chemical structure different from chemical structures of the two or more kinds of halogen-based precursors to the substrate.

Abstract: The present invention provides a technology capable of removing impurities remaining in a thin film when the film is formed and modifying a characteristic of the thin film according to a change in impurity concentration. There is provided a method of manufacturing a semiconductor device including: (a) repetitively supplying a plurality of gases including elements constituting a film in temporally separated pulses (in non-simultaneous manner) to form the film on the substrate; and (b) exciting a modifying gas including a reducing gas and at least one of a nitriding gas and an oxidizing gas by plasma and supplying the modifying gas excited by plasma to modify the film.

Abstract: Disclosed is a method comprising acquiring a value relating to VEGF-A of a subject, wherein the value is a measured value of total VEGF-A in a blood sample, or a value obtained by dividing a measured value of VEGF-A165b in the blood sample by a measured value of total VEGF-A in the blood sample (VEGF-A165b/total VEGF-A), and the value suggests prognosis of myocardial infarction of the subject or severity of coronary artery disease of the subject.

Abstract: Provided is a technique of adjusting a work function. A method of manufacturing a semiconductor device includes: (a) forming a titanium nitride layer on a substrate by supplying a first source containing titanium and a second source containing nitrogen to the substrate; (b) forming a titanium aluminum carbonitride layer on the substrate by supplying the first source, the second source and a third source containing aluminum and carbon to the substrate; (c) forming a laminated film on the substrate by performing (a) and (b); and (d) adjusting ratios of titanium, nitrogen, aluminum and carbon in the laminated film based on how many times (a) and (b) are performed.

Abstract: A method for improving a film formation rate and forming a film having a high dry etching resistance is disclosed. The method includes forming a metal nitride layer containing the metal element and the nitrogen element by performing a predetermined number of times in a time division manner supplying a halogen-based source gas containing the metal element to the substrate and supplying a reaction gas containing the nitrogen element and reacting with the metal element to the substrate; and forming a metal carbonitride layer containing the metal element, the carbon element, and the nitrogen element by performing a predetermined number of times in a time division manner supplying an organic-based source gas containing the metal element and the carbon element to the substrate and supplying the reaction gas to the substrate.

Abstract: There is provided a technique that includes: forming a film on a substrate by performing, simultaneously at least for a predetermined period: supplying a first precursor to the substrate, the first precursor containing a chemical bond of a predetermined element and nitrogen or a chemical bond of the predetermined element and carbon, containing a chemical bond of the predetermined element and hydrogen, and not containing a chemical bond of nitrogen and hydrogen; and supplying a pseudo catalyst to the substrate, the pseudo catalyst containing a Group 13 element and not containing the chemical bond of nitrogen and hydrogen, wherein in the act of forming the film, a substance containing the chemical bond of nitrogen and hydrogen is not supplied to the substrate.

Abstract: Provided is a technique of adjusting a work function. A method of manufacturing a semiconductor device includes forming a film having a predetermined thickness and containing a first metal element, carbon and nitrogen on a substrate by: (a) forming a first layer containing the first metal element and carbon by supplying a metal-containing gas containing the first metal element and a carbon-containing gas to the substrate M times and (b) forming a second layer containing the first metal element, carbon and nitrogen by supplying a nitrogen-containing gas to the substrate having the first layer formed thereon N times to nitride the first layer, wherein M and N are selected in a manner that a work function of the film has a predetermined value (where M and N are natural numbers).

Abstract: A method of manufacturing a semiconductor device, includes: forming a film on a substrate by performing a cycle a predetermined number of times, the cycle including: supplying two or more kinds of halogen-based precursors having the same major elements and different halogen elements, or different major elements and the same halogen elements, or different major elements and different halogen elements to the substrate while overlapping at least portions of supply periods of the two or more kinds of halogen-based precursors; and supplying a reactant having a chemical structure different from chemical structures of the two or more kinds of halogen-based precursors to the substrate.

Abstract: A video game processing apparatus stores music information indicating music, the music being constructed by a plurality of tracks, the music being reproduced with plural kinds of reproducing styles by reproducing an arbitrary combination of one or two or more tracks; stores music reproducing style information, the music reproducing style information indicating a reproducing style of music according to a game point value; starts reproduction with a reproducing style according to the game point value; reproduces the music indicated by the music information; updates the game point value in accordance with a progress status of the video game; refers to the updated game point value and the music reproducing style information to determine whether the reproducing style of the reproduced music is to be updated or not; and updates the reproducing style of the reproduced music to a reproducing style according to the updated game point value.

Abstract: A method of manufacturing a semiconductor device is provided. The method includes forming a film on a substrate by causing a first precursor and a second precursor to intermittently react with each other by repeating a cycle a plurality of times, the cycle alternately performing supplying the first precursor, which satisfies an octet rule and has a first pyrolysis temperature, to the substrate and supplying the second precursor, which does not satisfy the octet rule and has a second pyrolysis temperature lower than the first pyrolysis temperature, to the substrate. In the act of forming the film, a supply amount of the first precursor is set larger than a supply amount of the second precursor.