Abstract: The invention provides a composite metal sheet produced by joining two metal sheets together, comprising: a projection formed by cutting the two metal sheets along a cutting line and pressing an area surrounded by the cutting line and a reference line in the two metal sheets, with the two metal sheets overlapping each other, with the reference line remaining uncut, with the cutting line extending from and communicating with both terminals of the reference line while forming a predetermined shape together with the reference line, and with the projection formed at one portion of the area in response to pressure applied to the area; hole generated by forming the projection in the two metal sheets; and a joint disposed between an outer peripheral cutting face of the projection and an inner peripheral cutting face of the hole.

Abstract: A power supply control IC includes: a switching control circuit of a fixed on-time type configured to generate an output voltage from an input voltage by driving an inductor by complimentarily turning on/off an output transistor and a synchronous rectification transistor based on a result of comparison between a predetermined reference voltage and a feedback voltage in accordance with the output voltage. The switching control circuit extends an on-time of the output transistor more when a backflow of a coil current is detected than when the backflow is not detected.

Abstract: Disclosed is a metal joint having improved electrical characteristics and mechanical strength. A center swaged part (2) formed by putting metal plates (11, 12) on top of each other, cutting the metal plates (11, 12) along a first to a fourth cut lines (L1 to L4), and depressing a part surrounded by the first to the fourth cut lines (L1 to L4). Metal joint parts are formed on cut surfaces of the first to the fourth cut lines (L1 to L4) because the cut surfaces of the first to forth cut lines (L1 to L4) are, while rubbing each other, depressed.

Abstract: A method for manufacturing a semiconductor device includes determining a position of a first semiconductor chip having a plurality of first electrodes, using one or more first alignment marks formed on the first semiconductor chip, determining a position of a second semiconductor chip having a plurality of second electrodes, using one or more second alignment marks formed on the second semiconductor chip, moving the second semiconductor chip relative to the first semiconductor chip, based on the determined positions of the first and second semiconductor chips, such that the second electrodes are aligned with the first electrodes, after said moving, stacking the second semiconductor chip on the first semiconductor chip, such that the first electrodes are electrically connected to the second electrodes, and calculating a misalignment amount between the first semiconductor chip and the second semiconductor chip stacked thereon.

Abstract: In an electric storage device, a terminal plate includes an element-connecting part electrically connected to a first electrode at a first end of an electric storage element, and an external terminal connected to this element-connecting part. A sealing member is on the element-connecting part, and includes a hole where the external terminal is inserted. The sealing member and the external terminal seal an opening of an outer jacket. The external terminal includes a tapered part on its outer periphery at a tip, and is partially exposed from the sealing member. The tapered part includes a first end and a second end farther away from the element-connecting part than the first end. An edge of a side wall at the opening of the outer jacket is between the first and second ends of the tapered part in a first direction extending from the bottom to the opening of the outer jacket.

Abstract: According to one embodiment, a semiconductor device manufacturing method provides filling a through-hole which penetrates through a first side of substrate to a second side thereof. A seed film including copper is formed on the inner wall surface of the through-hole. A first metal layer including copper is grown bottom-up from one end of the through-hole toward the other end thereof, to partially fill the through-hole, leaving a space having a depth less than the radius of the through-hole as measured from the second side surface of the substrate. A second metal layer including nickel is conformally grown in the space from the inner peripheral surface of the through-hole to a height having a summit surface protruding from the second side surface of the substrate. A third metal layer is formed on the summit surface of the second metal layer.

Abstract: A power control IC has a switching control circuit of a fixed on-period type which generates an output voltage from an input voltage by driving a coil by turning on and off an output transistor according to a result of comparison between a feedback voltage and a reference voltage, and a quieting circuit which forcibly turns on the output transistor by ignoring the result of comparison when, after an on-timing of the output transistor, a predetermined threshold time elapses without the next on-timing coming.

Abstract: The invention provides a composite metal sheet produced by joining two metal sheets together, comprising: a projection formed by cutting the two metal sheets along a cutting line and pressing an area surrounded by the cutting line and a reference line in the two metal sheets, with the two metal sheets overlapping each other, with the reference line remaining uncut, with the cutting line extending from and communicating with both terminals of the reference line while forming a predetermined shape together with the reference line, and with the projection formed at one portion of the area in response to pressure applied to the area; hole generated by forming the projection in the two metal sheets; and a joint disposed between an outer peripheral cutting face of the projection and an inner peripheral cutting face of the hole.

Abstract: Provided is a switching power source device in which fluctuation of the switching frequency can be suppressed without impairing the advantages of a non-linear control system. A switching power source device is provided with: switching control units of non-linear control type that generate an output voltage (out) from an input voltage (IN) by performing ON/OFF control of switching elements in accordance with the results of comparing a feedback voltage (FB) and reference voltage (REF); and an ON time setting unit that monitors switching voltage (SW) appearing at one end of the switch terminals, and sets the ON time (Ton) of the switching element in the switching control units based on the duty of the switching voltage (SW).

Abstract: A switching power supply device includes: a non-linear control type switching control unit that, in accordance with a result of a comparison between a feedback voltage and a reference voltage, performs on/off control of a switch element, and thereby generates an output voltage from an input voltage; a backflow current detection unit that, upon detecting a backflow current flowing to the switch element, forcibly switches off the switch element; and an on-time setting unit that sets an on-time of the switch element, in a case of the backflow current not being detected, in accordance with a duty of the switch element, and in a case of the backflow current being detected, in accordance with a switch voltage appearing at one end of the switch element or the output voltage.

Abstract: The ground terminal is wound around an outer periphery of the coaxial cable. A portion of the ground terminal wound around the coaxial cable is clipped between the pair of electrodes. While the pair of electrodes is pressed in a direction close to each other, a current is applied to the pair of electrodes. The current of a predetermined current value is applied for a predetermined time so that the insulating outer coat 34 is heated more than the melting point of the insulating outer coat, the braided wire 33 and the ground terminal are connected to each other, and the insulating inner coat is heated less than the melting point of the insulating inner coat.

Abstract: A switching power supply device has a switching controller adapted to generate an output voltage from an input voltage by turning on and off a switching device by a non-linear control method according to a comparison signal and a timer signal, a main comparator adapted to generate the comparison signal by comparing a feedback voltage based on the output voltage with a predetermined reference voltage, a timer adapted to output the timer signal as a one-shot pulse when a predetermined fixed period elapses after the switching device is turned from on to off or vice versa, and a reverse current detector adapted to detect a reverse current to the switching device to forcibly turn off the switching device. The timer and the reverse current detector are turned on at a pulse edge in the comparison signal, and are turned off on ending their respective operation.

Abstract: The semiconductor device according to the present invention has an n-channel output transistor wherein an input voltage is impressed on a drain, and a pulsed switching voltage that corresponds to a switching drive of the transistor is brought out from a source; a bootstrap circuit for generating a boost voltage enhanced by a predetermined electric potential above the switching voltage; an internal circuit for receiving a supply of the boost voltage to generate a switching drive signal, and supplying the signal to a gate of the output transistor; an overvoltage protection circuit for monitoring an electric potential difference between the switching voltage and the boost voltage, and generating an overvoltage detection signal; and a switching element for establishing/blocking electrical conduction between the internal circuit and the end impressed with the boost voltage, in accordance with the overvoltage detection signal.

Abstract: The invention provides a composite metal sheet produced by joining two metal sheets together, comprising: a projection formed by cutting the two metal sheets along a cutting line and pressing an area surrounded by the cutting line and a reference line in the two metal sheets, with the two metal sheets overlapping each other, with the reference line remaining uncut, with the cutting line extending from and communicating with both terminals of the reference line while forming a predetermined shape together with the reference line, and with the projection formed at one portion of the area in response to pressure applied to the area; hole generated by forming the projection in the two metal sheets; and a joint disposed between an outer peripheral cutting face of the projection and an inner peripheral cutting face of the hole.

Abstract: A switching transistor is arranged between a switching (SW) terminal and the ground terminal. An error amplifier amplifies the difference between the feedback voltage VFB that corresponds to the output voltage VOUT with a predetermined reference voltage VREF so as to generate an error voltage VERR. A pulse modulator generates a pulse signal SP having a duty ratio that is adjusted according to the error voltage VERR. A driver drives a switching transistor according to the pulse signal SP. An overvoltage detection circuit generates an overvoltage protection (OVP) signal which is asserted when the voltage at the switching (SW) terminal becomes higher than a predetermined threshold voltage. When the OVP signal is asserted, a control circuit performs a predetermined protection operation.

Abstract: A solenoid control device executes feedback control such that a drive current for a solenoid follows a target current, by driving, through PWM, a MOSFET provided on a power supply line to the solenoid. An overcurrent detection circuit that outputs an overcurrent detection signal when the drive current for the solenoid reaches an overcurrent determination current value is provided, and it is determined whether an overcurrent is generated. Whether a short-circuit occurs between both terminals of the solenoid is determined by monitoring whether the overcurrent detection circuit is repeating an output of the overcurrent detection signal and a stop of the output of the overcurrent detection signal.

Abstract: In an electric storage device, a terminal plate includes an element-connecting part electrically connected to a first electrode at a first end of an electric storage element, and an external terminal connected to this element-connecting part. A sealing member is on the element-connecting part, and includes a hole where the external terminal is inserted. The sealing member and the external terminal seal an opening of an outer jacket. The external terminal includes a tapered part on its outer periphery at a tip, and is partially exposed from the sealing member. The tapered part includes a first end and a second end farther away from the element-connecting part than the first end. An edge of a side wall at the opening of the outer jacket is between the first and second ends of the tapered part in a first direction extending from the bottom to the opening of the outer jacket.

Abstract: According to one embodiment, a semiconductor device manufacturing method provides filling a through-hole which penetrates through a first side of substrate to a second side thereof. A seed film including copper is formed on the inner wall surface of the through-hole. A first metal layer including copper is grown bottom-up from one end of the through-hole toward the other end thereof, to partially fill the through-hole, leaving a space having a depth less than the radius of the through-hole as measured from the second side surface of the substrate. A second metal layer including nickel is conformally grown in the space from the inner peripheral surface of the through-hole to a height having a summit surface protruding from the second side surface of the substrate. A third metal layer is formed on the summit surface of the second metal layer.

Abstract: A switching power supply device has a reference voltage generator for generating a reference voltage, a ripple injector for generating a ripple by use of a pulse voltage indicating the on/off state of a switching element and injecting the ripple into the reference voltage, an integrated voltage generator for generating an integrated voltage commensurate with the integrated value of the pulse voltage throughout its on/off-duty periods, a subtractor for lowering according to the integrated voltage the reference voltage before injection of the ripple or the supply voltage to a buffer that feeds the ripple injector with the pulse voltage after making its pulse height constant, a comparator for comparing a feedback voltage with the reference voltage after injection of the ripple, and a switching controller for generating an output voltage from an input voltage by non-linear control by turning on/off the switching element according to the output of the comparator.

Abstract: A DC/DC converter 10 has a high-side transistor QH as a switching element and a low-side transistor QL as a synchronous rectifier element. A first primary electrode D and secondary primary electrode S of the high-side transistor QH are connected to an input voltage VIN and an external terminal T1, respectively. A detection transistor QD is provided in a row with the high-side transistor QH, and the ON voltage of the high-side transistor QH when ON is output as detection voltage VQD from the detection transistor QD. The output detection voltage VQD is added to a feedback voltage VFB1 by an adder CB, and inputted to a comparator CMP1. The ON period of a one-shot pulse PS1 outputted from the comparator CMP1 is regulated so as to be in direct proportion to the sum of the detection voltage VQD and the feedback voltage VFB1.