Abstract: A housing member for a power transmission device connected to a driving source via a torque converter housed in the housing member includes a torque converter side mating face closer to the torque converter. The torque converter side mating face has a single-wall structure and a double-wall structure, wherein two adjacent fastening regions are connected circumferentially by a wall in the single-wall structure, and wherein two adjacent fastening regions are connected circumferentially by each of two walls in the double-wall structure. The torque converter side mating face includes: an upper half region in which the double-wall structure has a greater proportion in area than the single-wall structure; and a lower half region in which the double-wall structure has a less proportion in area than the single-wall structure.

Abstract: A vehicle includes a case member, a stay member and a rib. The case member is supported by a frame of a vehicle body with a mount member being interposed. The stay member is suspended between a boss part of the case member and a member of a case member side in the mount member, a longitudinal direction of the stay member intersecting a longitudinal direction of the frame. The rib extends in the case member in a direction that is an extension of the longitudinal direction of the stay member at a root of the boss part.

Abstract: A plate heat exchanger includes a plurality of plates stacked so that a liquid flow passage is formed on the inside thereof, and a gas flow passage through which heating gas passes, the gas flow passage being formed between the plurality of plates and including a gas inflow opening portion and a gas outflow opening portion positioned on an opposite side to the gas inflow opening portion, wherein the gas outflow opening portion has a smaller opening area than the gas inflow opening portion. Thus, when the heating gas passes through the gas flow passage, even if the volumetric flow thereof decreases due to a reduction in temperature or condensation, a reduction in the flow velocity of the heating gas can be suppressed. Hence, a reduction in a heat transfer coefficient can be suppressed, leading to an improvement in heat transfer efficiency, and as a result, reductions in overall size, weight, and manufacturing cost can be achieved appropriately.

Abstract: A control device for controlling an engine provided with a fuel pump including a pressurizing chamber, a plunger inserted into the pressurizing chamber and which changes a volume of the pressurizing chamber, and an on-off valve configured to open and close a suction port, is provided. When a pressurizing cycle consists of a period of pressurizing stroke in which the volume of the pressurizing chamber is reduced to allow fuel to be pressurized and a period of suction stroke in which the volume of the pressurizing chamber is increased to allow fuel to be drawn into the pressurizing chamber, a closing cycle of the on-off valve is controlled so that a ratio of the closing cycle to the pressurizing cycle becomes smaller in a second combustion mode where a partial compression-ignition combustion is performed than in a first combustion mode where SI combustion is performed.

Abstract: A controller for controlling a fuel injection valve and a fuel pressure adjustment mechanism integrates a deposition amount of deposits per unit time, and estimates a deposition amount of deposits on an injection hole of the fuel injection valve. The controller causes the fuel pressure adjustment mechanism to increase a fuel pressure, when the estimated deposition amount exceeds a predetermined value, and corrects the unit deposition amount acquired by the deposition amount estimation according to the set fuel injection timing of the fuel injection valve. The controller corrects such that as compared with the unit deposition amount when the fuel injection timing is set to a first timing away from a top dead center of the piston by a first period, the unit deposition amount decreases when the fuel injection timing is set to a second timing away by a second period longer than the first period.

Abstract: A control device for controlling an engine provided with a fuel pump including a pressurizing chamber, a plunger inserted into the pressurizing chamber and which changes a volume of the pressurizing chamber, and an on-off valve configured to open and close a suction port, is provided. When a pressurizing cycle consists of a period of pressurizing stroke in which the volume of the pressurizing chamber is reduced to allow fuel to be pressurized and a period of suction stroke in which the volume of the pressurizing chamber is increased to allow fuel to be drawn into the pressurizing chamber, a closing cycle of the on-off valve is controlled so that a ratio of the closing cycle to the pressurizing cycle becomes smaller in a second combustion mode where a partial compression-ignition combustion is performed than in a first combustion mode where SI combustion is performed.

Abstract: A semiconductor-product testing device that supplies a test pattern for testing a semiconductor product to the semiconductor product includes a pattern memory that stores a part of the test pattern. The pattern memory is rewritten during a time when the semiconductor product is tested by a part of the test pattern stored in the pattern memory included in the semiconductor-product testing device.

Abstract: A controller for controlling a fuel injection valve and a fuel pressure adjustment mechanism sets an air-fuel ratio of a fuel-air mixture to be generated within a combustion chamber to be equal to or leaner than a theoretical air-fuel ratio, based on an operating condition of an engine; drives the fuel injection valve, based on the set air-fuel ratio; estimates a deposition amount of deposits on an injection hole of the fuel injection valve, based on an operating condition of the engine; causes the fuel pressure adjustment mechanism to increase the fuel pressure, when the estimated deposition amount of deposits exceeds a predetermined value; and restricts the fuel pressure from increasing, even when the estimated deposition amount of deposits exceeds the predetermined value, as long as the fuel-air ratio is set to an air-fuel ratio leaner than the theoretical fuel-air ratio.

Abstract: A controller for controlling a fuel injection valve and a fuel pressure adjustment mechanism sets an air-fuel ratio of a fuel-air mixture to be generated within a combustion chamber to be equal to or leaner than a theoretical air-fuel ratio, based on an operating condition of an engine; drives the fuel injection valve, based on the set air-fuel ratio; estimates a deposition amount of deposits on an injection hole of the fuel injection valve, based on an operating condition of the engine; causes the fuel pressure adjustment mechanism to increase the fuel pressure, when the estimated deposition amount of deposits exceeds a predetermined value; and restricts the fuel pressure from increasing, even when the estimated deposition amount of deposits exceeds the predetermined value, as long as the fuel-air ratio is set to an air-fuel ratio leaner than the theoretical fuel-air ratio.

Abstract: A controller for controlling a fuel injection valve and a fuel pressure adjustment mechanism integrates a deposition amount of deposits per unit time, and estimates a deposition amount of deposits on an injection hole of the fuel injection valve. The controller causes the fuel pressure adjustment mechanism to increase a fuel pressure, when the estimated deposition amount exceeds a predetermined value, and corrects the unit deposition amount acquired by the deposition amount estimation according to the set fuel injection timing of the fuel injection valve. The controller corrects such that as compared with the unit deposition amount when the fuel injection timing is set to a first timing away from a top dead center of the piston by a first period, the unit deposition amount decreases when the fuel injection timing is set to a second timing away by a second period longer than the first period.

Abstract: An additional test pattern acquiring unit acquires a test pattern, which is not yet executed to the semiconductor device serving as a target of executing an additional test among test patterns stored in a test pattern information DB, as an additional test pattern with reference to a semiconductor manufacturing history information DB. Also, an additional test transmitting unit transmits the additional test pattern acquired by the additional test pattern acquiring unit to the semiconductor device serving as the target of the additional test through a network. An additional test result acquiring unit acquires a test execution result together with an ID of the semiconductor device, and a registration unit registers identification information of the executed test pattern, an execution result of the test pattern, and an execution timing of the test in a semiconductor product history information DB so as to be associated with the acquired ID of the semiconductor device.

Abstract: In a detector apparatus, a first magnetosensitive unit includes first and third magnetic resistor elements arranged next to each other in a moving direction of the to-be-detected unit and electrically connected in series between a first potential and a second potential, a second magnetosensitive unit includes second and fourth magnetic resistor elements arranged next to each other in the moving direction of the to-be-detected unit and electrically connected in series between the first potential and the second potential, and as for resistances for a same magnetic field, a relation of whether or not a resistance of the third magnetic resistor element is higher than a resistance of the first magnetic resistor element is the same as a relation of whether or not a resistance of the second magnetic resistor element is higher than a resistance of the fourth magnetic resistor element.

Abstract: In a predetermined operating region, a fuel injection valve executes a second injection to inject fuel into a cylinder in a compression stroke, and a first injection to inject fuel into the cylinder 2 in the compression stroke or an intake stroke before the second injection. When a purge is executed, the total quantity of fuel to be injected by the fuel injection valve into the cylinder is reduced more than when the purge is not executed, and a fuel reduction quantity of the second injection is made smaller than a fuel reduction quantity of the first injection.

Abstract: A first clamp circuit (4) clamps a voltage between a gate and a first terminal of a switching device (Q1) to equal to or lower than a first clamp voltage. A control circuit (2) controls the switching device (Q1) and includes a driving unit (5) driving the switching device (Q1), an abnormality detecting unit (9) stopping the driving unit (5) upon detection of an abnormality in operation, and a second clamp circuit (10). The second clamp circuit (10) clamps the voltage between the gate and the first terminal to equal to or lower than a second clamp voltage which is lower than the first clamp voltage when the abnormality detecting unit (9) stops the driving unit (5).

Abstract: A torsion beam of a vehicle torsion beam suspension has a closed cross section. A beam center portion has an inverse substantially v-shaped cross section or a substantially v-shaped cross section. Circumference increasing portions having a longer circumferential length toward the beam ends are disposed at opposite sides of the beam center portion. Each circumference increasing portion has a beam width that is a width in the fore and aft direction of a vehicle body, the beam width gradually increasing toward a beam end, and increasing at a higher rate as a position of the beam width is closer to the beam end.

Abstract: An end of a high-voltage electrode (5) is connected to a high-voltage terminal of a semiconductor device (1). An end of a low-voltage electrode (6) is connected to a low-voltage terminal of the semiconductor device (1). A resin (15) seals the semiconductor device (1), the end of the high-voltage electrode (5), and the end of the low-voltage electrode (6). A first discharge electrode (16) is provided to a portion of the high-voltage electrode (5) not covered by the resin (15). A second discharge electrode (17) is provided to a portion of the low-voltage electrode (6) not covered by the resin (15). The first and second discharge electrodes (16,17) protrude to face each other.

Abstract: A plate heat exchanger includes a plurality of plates stacked so that a liquid flow passage is formed on the inside thereof, and a gas flow passage through which heating gas passes, the gas flow passage being formed between the plurality of plates and including a gas inflow opening portion and a gas outflow opening portion positioned on an opposite side to the gas inflow opening portion, wherein the gas outflow opening portion has a smaller opening area than the gas inflow opening portion. Thus, when the heating gas passes through the gas flow passage, even if the volumetric flow thereof decreases due to a reduction in temperature or condensation, a reduction in the flow velocity of the heating gas can be suppressed. Hence, a reduction in a heat transfer coefficient can be suppressed, leading to an improvement in heat transfer efficiency, and as a result, reductions in overall size, weight, and manufacturing cost can be achieved appropriately.

Abstract: An additional test pattern acquiring unit acquires a test pattern, which is not yet executed to the semiconductor device serving as a target of executing an additional test among test patterns stored in a test pattern information DB, as an additional test pattern with reference to a semiconductor manufacturing history information DB. Also, an additional test transmitting unit transmits the additional test pattern acquired by the additional test pattern acquiring unit to the semiconductor device serving as the target of the additional test through a network. An additional test result acquiring unit acquires a test execution result together with an ID of the semiconductor device, and a registration unit registers identification information of the executed test pattern, an execution result of the test pattern, and an execution timing of the test in a semiconductor product history information DB so as to be associated with the acquired ID of the semiconductor device.

Abstract: A semiconductor-product testing device that supplies a test pattern for testing a semiconductor product to the semiconductor product includes a pattern memory that stores a part of the test pattern. The pattern memory is rewritten during a time when the semiconductor product is tested by a part of the test pattern stored in the pattern memory included in the semiconductor-product testing device.

Abstract: A semiconductor device of the present invention achieves improved avoidance of a parasitic operation in a circuit region while achieving miniaturization of the semiconductor device and a reduction in the amount of time for manufacturing the semiconductor device. The semiconductor device according to the present invention includes an IGBT disposed on a first main surface of a semiconductor substrate provided with a drift layer of a first conductivity type; a thyristor disposed on the first main surface of the semiconductor substrate; a circuit region; a hole-current retrieval region separating the IGBT and the circuit region in a plan view; and a diffusion layer of a second conductivity type, the diffusion layer being disposed on a second main surface of the semiconductor substrate. The IGBT has an effective area equal to or less than an effective area of the thyristor in a plan view.