Abstract: An engine control device including: a turbocharger; an EGR device that includes an EGR passage, an EGR valve, and an EGR cooler; and a PCM that, based on an operation state of an engine, controls the EGR valve to adjust an EGR rate that is a ratio of an EGR gas amount to a total amount of gas introduced to a cylinder of the engine. The PCM controls the EGR valve such that, in a high load range and a medium load range for the engine, the EGR device recirculates the EGR gas into an intake passage; and controls the EGR valve such that an EGR rate in the high load range is lower than an EGR rate in the medium load range at a same engine speed.

Abstract: A control apparatus of an engine including an intake valve, an exhaust valve, and a variable valve timing mechanism for varying open and close timings of at least one of the intake and exhaust valves, is provided. The control apparatus includes a processor configured to execute a valve controlling module for performing, via the variable valve timing mechanism, a valve overlap in which the intake and exhaust valves are both opened on intake stroke of the engine, and a temperature estimating module for estimating a temperature of exhaust gas at a given location in the exhaust system by estimating a temperature increase of the exhaust gas caused by afterburn and accounting for the temperature increase, the afterburn occurring due to fresh air blowing through a cylinder of the engine to an exhaust system during the valve overlap.

Abstract: In a predetermined operating region, a fuel injection valve executes a second injection to inject fuel into a cylinder in a compression stroke, and a first injection to inject fuel into the cylinder 2 in the compression stroke or an intake stroke before the second injection. When a purge is executed, the total quantity of fuel to be injected by the fuel injection valve into the cylinder is reduced more than when the purge is not executed, and a fuel reduction quantity of the second injection is made smaller than a fuel reduction quantity of the first injection.

Abstract: In a detector apparatus, a first magnetosensitive unit includes first and third magnetic resistor elements arranged next to each other in a moving direction of the to-be-detected unit and electrically connected in series between a first potential and a second potential, a second magnetosensitive unit includes second and fourth magnetic resistor elements arranged next to each other in the moving direction of the to-be-detected unit and electrically connected in series between the first potential and the second potential, and as for resistances for a same magnetic field, a relation of whether or not a resistance of the third magnetic resistor element is higher than a resistance of the first magnetic resistor element is the same as a relation of whether or not a resistance of the second magnetic resistor element is higher than a resistance of the fourth magnetic resistor element.

Abstract: An end of a high-voltage electrode (5) is connected to a high-voltage terminal of a semiconductor device (1). An end of a low-voltage electrode (6) is connected to a low-voltage terminal of the semiconductor device (1). A resin (15) seals the semiconductor device (1), the end of the high-voltage electrode (5), and the end of the low-voltage electrode (6). A first discharge electrode (16) is provided to a portion of the high-voltage electrode (5) not covered by the resin (15). A second discharge electrode (17) is provided to a portion of the low-voltage electrode (6) not covered by the resin (15). The first and second discharge electrodes (16,17) protrude to face each other.

Abstract: A substrate processing apparatus includes an indexer block, a first processing block, a second processing block, and an interface block. The indexer block includes a pair of carrier platforms and a transport section. A carrier storing a plurality of substrates in multiple stages is placed in each of the carrier platforms. The transport section includes transport mechanisms. The transport mechanisms concurrently transport the substrates.

Abstract: A torsion beam of a vehicle torsion beam suspension has a closed cross section. A beam center portion has an inverse substantially v-shaped cross section or a substantially v-shaped cross section. Circumference increasing portions having a longer circumferential length toward the beam ends are disposed at opposite sides of the beam center portion. Each circumference increasing portion has a beam width that is a width in the fore and aft direction of a vehicle body, the beam width gradually increasing toward a beam end, and increasing at a higher rate as a position of the beam width is closer to the beam end.

Abstract: A substrate transport mechanism receives two substrates from an upstream ID section using two arms of three arms. The substrate transport mechanism delivers one of the two substrates to and from an individual processing unit of a processing block using one of arms holding the one of the two substrates to be subjected to a given process by the processing block and one of the arms holding no substrate. The substrate transport mechanism then keeps holding the other substrate with the remaining one arm of the arms having received the substrates while the processing unit processes the substrate. The substrate transport mechanism transfers the two substrates to a downstream processing block using the one arm holding the substrate subjected to the given process by the processing block and the one arm holding the other substrate.

Abstract: A water heater has a primary heat exchanger having a first heat transfer tube, a secondary heat exchanger having a second heat transfer tube connected with the first heat transfer tube and being located higher than the first heat transfer tube, and an outflow path connected to an outflow-side end portion of the first heat transfer tube. The outflow path has an offset flow path portion including a rising portion which rises upward or obliquely upward from a connecting portion of the outflow path and the outflow-side end portion of the first heat transfer tube or from the vicinity of the connecting portion, the offset flow path portion being offset at a position higher than the outflow-side end portion.

Abstract: An engine control device including: a turbocharger; an EGR device that includes an EGR passage, an EGR valve, and an EGR cooler; and a PCM that, based on an operation state of an engine, controls the EGR valve to adjust an EGR rate that is a ratio of an EGR gas amount to a total amount of gas introduced to a cylinder of the engine. The PCM controls the EGR valve such that, in a high load range and a medium load range for the engine, the EGR device recirculates the EGR gas into an intake passage; and controls the EGR valve such that an EGR rate in the high load range is lower than an EGR rate in the medium load range at a same engine speed.

Abstract: A control apparatus of an engine including intake and exhaust valves and a variable valve timing mechanism for varying open and close timings is provided. The apparatus includes a processor configured to execute an increasing amount controlling module for performing a fuel amount increase control in which a fuel injection amount is increased to decrease an exhaust gas temperature, and a valve controlling module for controlling, via the variable valve timing mechanism, an overlapping period in which the intake and exhaust valves are both opened on intake stroke. When the increasing amount controlling module performs the increase control, based on an increase of a temperature of the exhaust gas in the increase control, the valve controlling module determines whether a protection for an exhaust system component is required, and if the protection is determined to be required, the valve controlling module shortens the overlapping period.

Abstract: A semiconductor device of the present invention achieves improved avoidance of a parasitic operation in a circuit region while achieving miniaturization of the semiconductor device and a reduction in the amount of time for manufacturing the semiconductor device. The semiconductor device according to the present invention includes an IGBT disposed on a first main surface of a semiconductor substrate provided with a drift layer of a first conductivity type; a thyristor disposed on the first main surface of the semiconductor substrate; a circuit region; a hole-current retrieval region separating the IGBT and the circuit region in a plan view; and a diffusion layer of a second conductivity type, the diffusion layer being disposed on a second main surface of the semiconductor substrate. The IGBT has an effective area equal to or less than an effective area of the thyristor in a plan view.

Abstract: A control apparatus of an engine including intake and exhaust valves and a variable valve timing mechanism for varying open and close timings is provided. The apparatus includes a processor configured to execute an increasing amount controlling module for performing a fuel amount increase control in which a fuel injection amount is increased to decrease an exhaust gas temperature, and a valve controlling module for controlling, via the variable valve timing mechanism, an overlapping period in which the intake and exhaust valves are both opened on intake stroke. When the increasing amount controlling module performs the increase control, based on an increase of a temperature of the exhaust gas in the increase control, the valve controlling module determines whether a protection for an exhaust system component is required, and if the protection is determined to be required, the valve controlling module shortens the overlapping period.

Abstract: A control apparatus of an engine including an intake valve, an exhaust valve, and a variable valve timing mechanism for varying open and close timings of at least one of the intake and exhaust valves, is provided. The control apparatus includes a processor configured to execute a valve controlling module for performing, via the variable valve timing mechanism, a valve overlap in which the intake and exhaust valves are both opened on intake stroke of the engine, and a temperature estimating module for estimating a temperature of exhaust gas at a given location in the exhaust system by estimating a temperature increase of the exhaust gas caused by afterburn and accounting for the temperature increase, the afterburn occurring due to fresh air blowing through a cylinder of the engine to an exhaust system during the valve overlap.

Abstract: A substrate processing apparatus includes an indexer block, a first processing block, a second processing block, and an interface block. The indexer block includes a pair of carrier platforms and a transport section. A carrier storing a plurality of substrates in multiple stages is placed in each of the carrier platforms. The transport section includes transport mechanisms. The transport mechanisms concurrently transport the substrates.

Abstract: A substrate processing apparatus includes an indexer block, a first processing block, a second processing block, and an interface block. The indexer block includes a pair of carrier platforms and a transport section. A carrier storing a plurality of substrates in multiple stages is placed in each of the carrier platforms. The transport section includes transport mechanisms. The transport mechanisms concurrently transport the substrates.

Abstract: A water heater has a primary heat exchanger having a first heat transfer tube, a secondary heat exchanger having a second heat transfer tube connected with the first heat transfer tube and being located higher than the first heat transfer tube, and an outflow path connected to an outflow-side end portion of the first heat transfer tube. The outflow path has an offset flow path portion including a rising portion which rises upward or obliquely upward from a connecting portion of the outflow path and the outflow-side end portion of the first heat transfer tube or from the vicinity of the connecting portion, the offset flow path portion being offset at a position higher than the outflow-side end portion.

Abstract: In an entire region exposure unit, a platform section and a local transfer mechanism are arranged in one direction. The local transfer mechanism is provided with a local transfer hand. A substrate on which a resist film having a predetermined pattern is formed is held by the local transfer hand. A light-emitting device is attached to the upper portion of the local transfer mechanism. Strip-shaped light is emitted from the light-emitting device toward below. The local transfer mechanism operates such that the local transfer hand is moved relative to the light-emitting device. At this time, the light-emitting device irradiates one surface of the substrate that is moving horizontally with the strip-shaped light. The resist film is modified by the light.

Abstract: A substrate transport mechanism receives two substrates from an upstream ID section using two arms of three arms. The substrate transport mechanism delivers one of the two substrates to and from an individual processing unit of a processing block using one of arms holding the one of the two substrates to be subjected to a given process by the processing block and one of the arms holding no substrate. The substrate transport mechanism then keeps holding the other substrate with the remaining one arm of the arms having received the substrates while the processing unit processes the substrate. The substrate transport mechanism transfers the two substrates to a downstream processing block using the one arm holding the substrate subjected to the given process by the processing block and the one arm holding the other substrate.

Abstract: A power semiconductor device for an igniter comprises: a semiconductor switching device causing a current to flow through a primary side of an ignition coil or shutting off the current; and an integrated circuit driving and controlling the semiconductor switching device, wherein the integrated circuit includes: a first discharge device discharging charge accumulated on a control terminal of the semiconductor switching device and shutting off the semiconductor switching device so as to generate ignition plug spark voltage on a secondary side of the ignition coil during a normal operation; and a second discharge device slower discharging the charge accumulated on the control terminal in comparison with the first discharge device and shutting off the semiconductor switching device so that a voltage on the second side of the ignition coil is equal to or lower than the ignition plug spark voltage during an abnormal state.