Abstract: A first substrate having a working region, a flexible region, and a fixed region is prepared. Resistance elements are formed within the flexible region on a first surface of this substrate. A portion of the first substrate is removed. Thus, the flexible region is allowed to have flexibility. A second substrate is connected to a second surface of the first substrate. The second substrate is cut later into two portions of a working portion and a pedestal. The working portion is connected to the working region of the first substrate, and the pedestal is connected to the fixed region of the first substrate. In order to control displacements in upward and downward directions of the working portion, control substrates are further connected. A force applied to the working portion by acceleration or magnetism is detected as changes in the resistance values of the resistance elements.

Abstract: Force and moment exerted on the working point (P) on a semiconductor substrate (110, 210), on one surface of which resistance elements (r, R) having an electric resistance varying due to mechanical deformation are formed, are detected. A portion spaced from the working point of the semiconductor substrate is fixed. Since openings (113) or bridge portions (212 to 215) are formed in the semiconductor substrate, when a force or an angular moment in a fixed direction is applied to the working point, uneven stresses are produced on the semiconductor substrate. Such uneven stesses are detected as changes in electric resistances of the resistance elements. A measure is taken for an arrangement of resistance elements on the semiconductor substrate, thereby to constitute predetermined bridges. Thus, forces in three directions and angular moments in three directions in the three-dimensional space can be independently read as bridge voltages, respectively.

Abstract: A force detector is comprised of resistance elements having a piezo resistance effect such that electric resistance varies due to mechanical deformation, and formed on a single crystal substrate (10), and a strain generative body (20) having a supporting portion (21) and a working portion (23), thus allowing the resistance elements to produce a mechanical deformation on the basis of a displacement with respect to the supporting portion of the working portion. This force detector can detect a force applied to the working portion as changes in resistance values of the resistance elements. The plane on which resistance elements are to be formed on the single crystal substrate is selected so that piezo resistance coefficients in two directions perpendicular to each other exhibit peak. When a weight body (30) is connected to the working portion, it is possible to detect an acceleration acting on the weight body.

Abstract: Force and moment exerted on the working point (P) on a semiconductor substrate (110; 210), on one surface of which resistance elements (r, R) having an electric resistance varying due to mechanical deformation are formed, are detected. A portion spaced from the working point of the semiconductor substrate is fixed. Since openings (113) or bridge portions (212 to 215) are formed in the semiconductor substrate, when a force or an angular moment in a fixed direction is applied to the working point, uneven stresses are produced on the semiconductor substrate. Such uneven stresses are detected as changes in electric resistances of the resistance elements. A measure is taken for an arrangement of resistance elements on the semiconductor substrate, thereby to constitute predetermined bridges. Thus, forces in three directions and angular moments in three directions in the three-dimensional space can be independently read as bridge voltages, respectively.

Abstract: There is proposed a tilt sensor in which a permanent magnet having a surface coated with a magnetic field is housed in a hollow portion of a nonmagnetic case, and a magnetic sensing element is disposed outside a bottom portion of the case. When the case is tilted at an angle exceeding a predetermined angle, the permanent magnet is greatly moved and the magnetic sensing element detects the movement of the magnet. Furthermore, adverse influences due to magnetic attraction between the permanent magnet and the magnetic sensing element or a surface tension of the magnetic fluid are compensated.