Abstract: A photodetection element includes a first semiconductor layer; and a second semiconductor layer stacked on the first layer and converting light into electric charges; wherein the first semiconductor layer has a thickness of 5 ?m or less.

Abstract: A non-transitory computer-readable storage medium storing a program that causes a computer to execute a process, the process including writing, to a memory, a packet obtained by copying a packet being transmitted, reading, from the memory, the packet to be transferred to a device that diagnoses a communication state, selecting, from packets stored in the memory, one or more packets subjected to at least one of a connection procedure and a disconnection procedure in a predetermined protocol, and discarding, from the memory, one or more packets other than the one or more selected packets.

Abstract: A binder layer formation step of forming a binder layer of which an initial sticking strength of a surface is 1 or more on a current collector; a sticking step of sticking a powder having an angle of repose of 45° or less onto the surface of the binder layer by bringing the powder into contact with the surface; and a compression step of compressing the powder stuck in the sticking step into a predetermined density are included.

Abstract: A packet control device includes a processor that receives a first packet to be input or output through a port. The processor determines whether the first packet is to be mirrored. The processor determines, upon determining that the first packet is to be mirrored, whether the first packet has been mirrored, based on a value of an area of the first packet. Upon determining that the first packet has not been mirrored, the processor generates a second packet by duplicating the first packet, sets a first value indicating completion of mirroring to the area of the second packet, transfers the second packet to a transfer destination, and transmits the first packet to a transmission destination. Upon determining that the first packet has been mirrored, the processor sets a second value indicating incompletion of mirroring to the area of the first packet, and transmits the first packet to the transmission destination.

Abstract: An event investigation assist device includes a processor. The processor stores a procedure model that associates event information with an investigation procedure and a required time for each of events that occur in a system. The investigation procedure is a procedure for investigating whether the relevant event is a fault. The processor stores a learning model that associates a first reliability with each of investigation contents for each of the events. The investigation contents are included in the investigation procedure. The processor accepts first event information and calculates a second reliability for each of first investigation procedures based on the learning model and the procedure model. The first investigation procedures are associated with the first event information in the procedure model. The processor determines a recommended investigation procedure from among the first investigation procedures based on the second reliability and the required time.

Abstract: A mirror packet control device includes a processor that detects a notification of a completion of movement of a first virtual machine from another device to the mirror packet control device. The processor refers, upon the detection of the notification, to first correspondence information to identify a transmission source that transmits a first mirror packet to the first virtual machine. The first correspondence information includes a first item associating first identification information of the first virtual machine with second identification information of the transmission source. The processor transmits a first deletion instruction to the transmission source. The first deletion instruction instructs deletion of a second item included in second correspondence information stored in the transmission source.

Abstract: A photodetector includes a structure that converts ultraviolet light into visible light; and a photodetection element that detects the visible light converted by the structure, wherein the structure is provided on the photodetection element and protrudes in a predetermined shape on a side opposite to the photodetection element.

Abstract: There is provided a process for producing molten glass, which is capable of easily increasing the H2O content in glass melt with excessive generation of convection of the glass melt being reduced.

Abstract: A photodetector includes a first cell converting incident light into electric charges; and a second cell converting incident light into electric charges; wherein the first cell includes a first semiconductor layer and a second semiconductor layer provided to be closer to a light incident side than the first semiconductor layer, wherein the second cell includes a third semiconductor layer and a fourth semiconductor layer provided to be closer to a light incident side than the third semiconductor layer, wherein a first interface between the third semiconductor layer and the fourth semiconductor layer is located to be closer to the light incident side than a second interface between the first semiconductor layer and the second semiconductor layer.

Abstract: A photodetection element includes a first semiconductor layer; and a second semiconductor layer stacked on the first layer and converting light into electric charges; wherein the first semiconductor layer has a thickness of 5 ?m or less.

Abstract: A photodetector includes a first cell for converting incident light into electric charges, the first cell including a first semiconductor layer, a second semiconductor layer and a first substrate interposing the first semiconductor layer with the second semiconductor layer; and a second cell for converting incident light into electric charges, the second cell including a third semiconductor layer, a fourth semiconductor layer, and a second substrate interposing the third semiconductor layer with the fourth semiconductor layer; wherein the second substrate is larger in thickness than the first substrate.

Abstract: A photodetector includes a structure that converts ultraviolet light into visible light; and a photodetection element that detects the visible light converted by the structure, wherein the structure is provided on the photodetection element and protrudes in a predetermined shape on a side opposite to the photodetection element.

Abstract: In one embodiment, an automatic voltage regulator includes a detection instruction unit configured to monitor a generator output voltage, and output an instruction signal when the output voltage of the generator 12 deviates from a predetermined range, the instruction signal being a signal of instructing detection of a specifying parameters generated in a generator field circuit of a generator excitation system; a field-parameter detection unit configured to detect the specifying parameters following to the instruction signal; and a comparison calculator configured to calculate a comparison value between the specifying parameters and a predetermined allowable upper-limit voltage-value of each component constituting the generator excitation system.

Abstract: A photodetector includes a first semiconductor layer and a second semiconductor layer provided on the first semiconductor layer and detecting light. The first semiconductor layer has a cavity portion for reflecting incident light.

Abstract: A monitoring device includes a comparison unit and a clock control unit. The comparison unit is configured to compare a signal level of a transmission signal and a signal level of a monitoring signal that has received the transmission signal with each other at a timing synchronized with a clock signal. The clock control unit is configured to detect the signal level of the monitoring signal and synchronize the clock signal with a timing when the signal level of the monitoring signal changes.

Abstract: In order to improve productivity of a semiconductor device, while improving stability of the blocking voltage of the semiconductor device, this semiconductor device is characterized by having a semiconductor element, and a laminated structure having three resin layers, said laminated structure being in a peripheral section surrounding a main electrode on one surface of the semiconductor element. The semiconductor device is also characterized in that the laminated structure has, on the center section side of the semiconductor element, a region where a lower resin layer is in contact with an intermediate resin layer, and a region where the lower resin layer is in contact with an upper resin layer.

Abstract: Provided is an inexpensive and highly reliable resin sealed-type onboard electronic control device is mounted in a vehicle such as an engine control unit and a control unit for automatic transmission, which have a heat dissipation structure for dissipating heat generated from an electronic component such as a semiconductor element. The onboard control device includes a circuit board, a member provided to face the circuit board, a heat generating electronic component mounted between the circuit board and the member, a heat dissipating material provided between the heat generating electronic component and the member, and a sealing resin to seal the circuit board and the heat generating electronic component. And a space between the member and the circuit board is at least a part of a range where the heat dissipating material is not provided, and is narrower than a range where the heat dissipating material is provided.

Abstract: In order to form, in a wide band gap semiconductor device, a high field resistant sealing material having a large end portion film thickness, said high field resistant sealing material corresponding to a reduced termination region having a high field intensity, and to improve accuracy and shorten time of manufacturing steps, this semiconductor device is configured as follows. At least a part of a cross-section of a high field resistant sealing material formed close to a termination region at the periphery of a semiconductor chip has a perpendicular shape at a chip outer peripheral end portion, said shape having, on the chip inner end side, a film thickness that is reduced toward the inner side. In a semiconductor device manufacturing method for providing such semiconductor device, the high field resistant sealing material is formed in a semiconductor wafer state, then, heat treatment is performed, and after dicing is performed, a chip is mounted.

Abstract: An photodetection device according to an embodiment includes: a pixel including at least one cell, the at least one cell including an avalanche photodiode and a resistor connected in series to the avalanche photodiode; a voltage source configured to apply voltage to the cell of the pixel; and a temperature detecting circuit including a temperature detecting element configured to detect a temperature of the pixel, wherein the temperature detecting element includes: a photodiode having the same structure as the avalanche photodiode; and a light shielding structure disposed on an upper surface of the photodiode.

Abstract: A laser processing system able to realize both reduction of the power consumption and shortening of the cycle time. The laser processing system is provided with a laser oscillator, a laser processing machine which has a movement mechanism which makes the irradiation position of the laser light on the workpiece move, a mode switching part which switches an operation mode of the laser oscillator between a standard-standby mode and an energy saving mode, a movement controller controlling the movement mechanism so as to place the irradiation position at a process start point placed at a non-product region of the workpiece, and a switching controller controlling the mode switching part to switch the operation mode from the energy saving mode to the standard-standby mode when placing the irradiation position at the process start point.