Abstract: An photodetection device according to an embodiment includes: a pixel including at least one cell, the at least one cell including an avalanche photodiode and a resistor connected in series to the avalanche photodiode; a voltage source configured to apply voltage to the cell of the pixel; and a temperature detecting circuit including a temperature detecting element configured to detect a temperature of the pixel, wherein the temperature detecting element includes: a photodiode having the same structure as the avalanche photodiode; and a light shielding structure disposed on an upper surface of the photodiode.

Abstract: A laser processing system able to realize both reduction of the power consumption and shortening of the cycle time. The laser processing system is provided with a laser oscillator, a laser processing machine which has a movement mechanism which makes the irradiation position of the laser light on the workpiece move, a mode switching part which switches an operation mode of the laser oscillator between a standard-standby mode and an energy saving mode, a movement controller controlling the movement mechanism so as to place the irradiation position at a process start point placed at a non-product region of the workpiece, and a switching controller controlling the mode switching part to switch the operation mode from the energy saving mode to the standard-standby mode when placing the irradiation position at the process start point.

Abstract: It is made possible for a user to set whether to download data used by a program without waiting for the acceptance of a download permission or download the data in response to the acceptance of the download permission via a screen that allows for making the setting for a plurality of programs. An input/output control section (90) accepts, from the user, a setting as to whether to select an automatic download state or a manual download state via a screen that allows for doing so for a plurality of programs. If the setting of selecting the automatic download state is accepted, an item management section (96) downloads the data from a server without waiting for the acceptance of the download permission from the user when a predetermined condition is satisfied. If the setting of selecting the manual download state is accepted, the item management section (96) downloads the data from the server in response to the acceptance of the download permission from the user when the predetermined condition is satisfied.

Abstract: A method of producing a lithium ion secondary battery includes the following (A) to (E). (A) A negative electrode active material powder having a BET specific surface area of 2.2 m2/g or more and 5.2 m2/g or less is prepared. (B) Fluorine is incorporated into the negative electrode active material powder. (C) Wet granules are prepared by mixing the negative electrode active material powder, a water-soluble binder powder, and water. (D) A negative electrode is produced by forming the wet granules into a film form. (E) A lithium ion secondary battery including the negative electrode, a positive electrode, and an electrolytic solution is produced. When the negative electrode active material powder is formed into a pellet having a density of 1.5 g/m3, fluorine is incorporated into the negative electrode active material powder so that the pellet has a water contact angle of 96° or more and 138° or less.

Abstract: Provided are a pretreatment device capable of starting pretreatment in a simple operation, and an analysis system provided with the pretreatment device. A container holding unit 12 holds pretreatment containers into each of which a sample is injected, at a plurality of holding positions. A pretreatment unit sequentially performs pretreatment by using the pretreatment containers held at the holding positions of the container holding unit 12 in a specific order. A position setting receiving means 84d receives a setting of the holding position of a pretreatment container to be used first among the plurality of holding positions in the case where a series of pretreatments using the plurality of pretreatment containers is started by the pretreatment unit.

Abstract: A binder layer formation step of forming a binder layer of which an initial sticking strength of a surface is 1 or more on a current collector; a sticking step of sticking a powder having an angle of repose of 45° or less onto the surface of the binder layer by bringing the powder into contact with the surface; and a compression step of compressing the powder stuck in the sticking step into a predetermined density are included.

Abstract: In one embodiment, an automatic voltage regulator includes a detection instruction unit configured to monitor a generator output voltage, and output an instruction signal when the output voltage of the generator 12 deviates from a predetermined range, the instruction signal being a signal of instructing detection of a specifying parameters generated in a generator field circuit of a generator excitation system; a field-parameter detection unit configured to detect the specifying parameters following to the instruction signal; and a comparison calculator configured to calculate a comparison value between the specifying parameters and a predetermined allowable upper-limit voltage-value of each component constituting the generator excitation system.

Abstract: A method includes receiving, by a switching device coupled to a network, a first packet transmitted through the network, generating, by the switching device, a first mirror packet of the received first packet by performing a first mirroring processing on the received first packet, the first mirror packet including first identification information identifying the first mirror packet, generating, by the switching device, a first time stamp packet including the first identification information and first time information indicating a first time when the first mirroring processing is performed, transmitting, by the switching device, the first mirror packet and the first time stamp packet to a storage device, and storing, in the storage device, the first mirror packet and the first time stamp packet transmitted from the switching device.

Abstract: A method of controlling a first virtual machine and a second virtual machine, the method includes detecting that the second virtual machine is in a suspended state, storing one or more first packets into a first buffer during the suspended state, inputting the one or more first packets stored in the first buffer into a second buffer after the suspended state is ended, generating one or more second packets by replicating the one or more first packets input from the first buffer to the second buffer, transmitting the one or more first packets stored in the second buffer to the first virtual machine, and transmitting the one or more second packets to the second virtual machine.

Abstract: In one embodiment, a photo detector is provided with a semiconductor layer having a first light receiving surface and a second light receiving surface opposite to the first light receiving surface, and a diffraction grating which is provided on the first light, receiving surface side of the semiconductor layer and has convex portions. The convex portions are arranged in one direction at a predetermined cycle.

Abstract: An information processing device includes: a communication control unit which performs short-range wireless communication with an IC tag; a base antenna; and a terminal to which an extension antenna device can be connected, the extension antenna device includes: extension antennas; and a terminal which, by being connected to the terminal to which an extension antenna device can be connected, connects the extension antennas and the information processing device to each other, and the communication control unit performs the short-range wireless communication with the IC tag via at least any of the base antenna 19 and the extension antennas.

Abstract: In order to form, in a wide band gap semiconductor device, a high field resistant sealing material having a large end portion film thickness, said high field resistant sealing material corresponding to a reduced termination region having a high field intensity, and to improve accuracy and shorten time of manufacturing steps, this semiconductor device is configured as follows. At least a part of a cross-section of a high field resistant sealing material formed close to a termination region at the periphery of a semiconductor chip has a perpendicular shape at a chip outer peripheral end portion, said shape having, on the chip inner end side, a film thickness that is reduced toward the inner side. In a semiconductor device manufacturing method for providing such semiconductor device, the high field resistant sealing material is formed in a semiconductor wafer state, then, heat treatment is performed, and after dicing is performed, a chip is mounted.

Abstract: In order to improve productivity of a semiconductor device, while improving stability of the blocking voltage of the semiconductor device, this semiconductor device is characterized by having a semiconductor element, and a laminated structure having three resin layers, said laminated structure being in a peripheral section surrounding a main electrode on one surface of the semiconductor element. The semiconductor device is also characterized in that the laminated structure has, on the center section side of the semiconductor element, a region where a lower resin layer is in contact with an intermediate resin layer, and a region where the lower resin layer is in contact with an upper resin layer.

Abstract: In one embodiment, a photo detector is provided with a semiconductor layer having a light receiving surface, a first reflective material which is provided on a side opposite to the light receiving surface side of the semiconductor layer and reflects a light incident from the light receiving surface, and a slope portion provided on a side surface of the semiconductor layer.

Abstract: In one embodiment, a photo detection device is provided with a first photo detector having a first semiconductor layer with a first light receiving surface, a second photo detector having a second semiconductor layer with a second light receiving surface, and a substrate which is arranged on the first light receiving surface of the first semiconductor layer and the second light receiving surface of the second semiconductor layer and transmits light. A thickness of the first semiconductor layer and a thickness of the second semiconductor layer are different from each other.

Abstract: In one embodiment, a photo detector is provided with a semiconductor layer having a projection portion provided at a side opposite to a light receiving surface side, and a reflective material which covers a surface of the projection portion and reflects a light incident from the light receiving surface. In the photo detector, the projection portion layer has a slope portion, and an angle ? of a slope surface of the slope portion to the light receiving surface satisfies 1 2 ? arcsin ? 1 n 1 ? ? ? 1 2 ? arctan ? L D using a refractive index n1 of the projection portion of the semiconductor layer, a length D of the semiconductor layer in a direction from the light receiving surface toward the projection portion, and a length L of the projection portion in the horizontal direction.

Abstract: According to an embodiment, an image processing method is implemented in an imaging device that includes a microlens array including microlenses, a main lens configured to guide light from a photographic subject to the microlens array, and an image sensor configured to receive the light after passing through the main lens and the microlens array. The method includes: obtaining an image captured by the image sensor; setting, according to an image height, an arrangement of a microlens image of interest and comparison-target microlens images from among microlens images that are included in the image and that are formed by the microlenses; detecting an amount of image shift between the microlens image of interest and each of the comparison-target microlens images by comparing the microlens image of interest with the comparison-target microlens images; and calculating a distance corresponding to the microlens image of interest using the amounts of image shift.

Abstract: The present invention provides a processing device with a high degree of flexibility in setting of preprocessing and which is capable of increasing the preprocessing efficiency, and an analysis system provided with the same. Setting receiving means (84d) receives, for each sample, setting of a plurality of types of preprocessing and a parameter for each preprocessing. A preprocessing execution section (84e) controls a plurality of preprocessing sections and a transport arm (24) so that a plurality of types of preprocessing set for each of different samples is performed simultaneously in parallel. The preprocessing execution section (84e) performs control in such a way that preprocessing is not to be performed on different samples at the same preprocessing section at the same.

Abstract: A liquid crystal optical device includes: a first electrode unit including a first substrate transparent to light, a light-transmitting layer formed on the first substrate, and a first electrode formed on the light-transmitting layer and being transparent to light, the light-transmitting layer including recesses formed on a surface facing the first electrode, arranged in a first direction, and extending in a second direction; a second electrode unit including a second substrate, the second substrate being transparent to light, and two second electrodes formed on the second substrate, the second electrodes being arranged in the second direction and extending along the first direction; a liquid crystal layer located between the first and second electrode units; a first polarizing plate located on an opposite side of the second electrode unit from the liquid crystal layer; and a drive unit that applies voltages to the first and second electrodes.

Abstract: A photodetector according to an embodiment includes: a semiconductor substrate including a first region and a second region adjacent to the first region; at least one light detection cell including a first semiconductor layer disposed in the first region, a second semiconductor layer disposed between the first semiconductor layer and the semiconductor substrate and including a junction portion with the first semiconductor layer, a third semiconductor layer disposed in the semiconductor substrate separately from the second semiconductor layer, a first electrode on the semiconductor substrate and applying a voltage to the first semiconductor layer, and a second electrode on the semiconductor substrate and applying a voltage to the third semiconductor layer; and a light guide disposed in the second region and guiding incident light to be propagated in a first direction to the junction portion between the first semiconductor layer and the second semiconductor layer.